IRFP2907PBF - 75V 209A N-Channel HEXFET MOSFET | Infineon
MPN: IRFP2907PBF ✓ فعالIRFP2907PBF جائزہ
What is a HEXFET power MOSFET? An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-to-source voltage exceeds its threshold. HEXFET is a stripe-planar DMOS cell architecture pioneered by International Rectifier (now part of Infineon) that interleaves thousands of vertical cells on a single die to minimize R_DS(on) per unit area. Power MOSFETs sit one tier below IGBTs in the power-semiconductor hierarchy and dominate sub-200 V, high-current applications such as motor drives, synchronous rectification, and battery protection.
Key features of the IRFP2907PBF include 75 V drain-to-source breakdown voltage (V_DSS), continuous drain current of 209 A at T_C = 25 C, ultra-low 4.5 mOhm static R_DS(on) at V_GS = 10 V, 175 C maximum junction operating temperature, fast switching speed, and an improved repetitive avalanche rating. The part is fully RoHS compliant (Pb-free) and supplied in a TO-247AC body that accepts standard TO-247 mounting hardware and heatsinks.
The HEXFET stripe-planar architecture combines a low gate charge of approximately 410 nC with the 4.5 mOhm R_DS(on), giving excellent figure-of-merit for hard-switched applications. Its avalanche-energy rating and 175 C junction capability make it tolerant of load-dump transients, while the body diode supports bridge and half-bridge topologies without an external anti-parallel diode.
Typical applications include 12 V/24 V automotive battery protection, brushed and BLDC motor drives for industrial tools, high-current synchronous rectification in telecom and server DC-DC converters, and high-wattage class-D audio amplifiers. Its 209 A rating also suits solar charge controllers and welding inverter front ends.
When designing with this device, place a low-ESR gate-drive resistor (typically 10-47 ohm) close to the gate pin to suppress ringing, and ensure the heatsink is sized for worst-case continuous dissipation, since the TO-247AC thermal resistance drops junction temperature rise only when the case-to-sink interface is well thermal-bonded.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that extend beyond what is published in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IRFP2907PBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFP2907PBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Operating Temperature Range, RoHS Status, MSL Level.
IRFP4368PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFP4468PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFB4110PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF3205PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFP250MPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFP2907PBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP2907PBF |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-to-Source Voltage (V_DSS) | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | 470 W |
| Total Gate Charge (Q_g) | 410 nC |
| Maximum Junction Operating Temperature | +175 C |
| Package / Mounting Type | TO-247AC (Through Hole) |
| پن کی تعداد | 3 (Gate, Drain, Source) |
| RoHS Compliance | Yes (Pb-free) |
| Avalanche Rated | Yes (repetitive avalanche rated) |
| Body Diode | Integral (no external anti-parallel diode required) |
| Lead-Free | Yes |
IRFP2907PBF پن کنفیگریشن
| پن 1 | Gate — Gate control input; drive to 10 V for full enhancement |
| پن 2 | Drain — Drain terminal; electrically tied to the metal tab and mounting hole |
| پن 3 | Source — Source terminal; return path for gate drive and load |
IRFP2907PBF محفوظ آپریٹنگ ایریا (DC, T_C = 25 C)
عام استعمالات
IRFP2907PBF کے لیے موزوں ہے 6 ایپلیکیشنs: 12 V/24 V Automotive Battery Protection, Brushed and BLDC Motor Drives, High-Current Synchronous Rectification, Class-D Audio Amplifier Output Stage, Solar Charge Controller / MPPT Front End, Welding Inverter Front End.
12 V/24 V Automotive Battery Protection
The IRFP2907PBF's 75 V V_DSS and 209 A continuous drain current make it ideal for high-current battery isolation and reverse-polarity protection circuits in 12 V and 24 V automotive systems. Its 4.5 mOhm R_DS(on) at 10 V V_GS keeps conduction loss under 1 W at 15 A load, minimizing heat on the isolation MOSFET. The 175 C junction rating tolerates load-dump transients on the alternator bus when sized with a TVS clamp. Placed in line with the battery positive rail, controlled by a smart high-side driver, it disconnects the load on over-current or reverse polarity within microseconds.
تجویز کردہ
Brushed and BLDC Motor Drives
For industrial brushed DC and brushless DC motor drives up to about 5 kW, the IRFP2907PBF delivers the continuous current needed for peak torque demands. Its 4.5 mOhm R_DS(on) and 410 nC gate charge support PWM frequencies of 15-25 kHz with acceptable switching loss, while the HEXFET avalanche rating handles the inductive kickback from motor windings. In a three-phase bridge each phase pair carries RMS currents of 40-60 A during normal operation, well within the 209 A capability. Designers should still add an RC snubber or gate-drive clamp to manage dV/dt-induced ringing at high current.
تجویز کردہ
High-Current Synchronous Rectification
The IRFP2907PBF works well as the synchronous rectifier MOSFET in 12 V-input, 50-100 A output buck converters for telecom and server DC-DC bricks. At 50 A load the conduction loss is roughly 11 W (I^2 x R_DS(on)), which a TO-247AC heatsink dissipates easily within the 470 W rated dissipation. The 75 V V_DSS provides ample margin over a 12 V nominal input. Using a dedicated low-side gate driver such as the IRS2109STRPBF in the XAIPART catalog ensures clean 10 V gate drive, which is essential to realize the published 4.5 mOhm R_DS(on).
تجویز کردہ
Class-D Audio Amplifier Output Stage
In high-wattage class-D audio amplifiers (1 kW and up), the IRFP2907PBF serves as the half-bridge output switch. Its 4.5 mOhm R_DS(on) minimizes conduction loss and keeps output impedance low, preserving damping factor and bass response. The 410 nC gate charge enables 250-500 kHz switching frequencies needed for high-fidelity audio while keeping driver loss manageable. Two IRFP2907PBF devices per channel (totem-pole) handle continuous currents typical of 4 ohm subwoofer loads. Engineers should add gate-source resistors and local bypass to prevent parasitic oscillation.
تجویز کردہ
Solar Charge Controller / MPPT Front End
The IRFP2907PBF's 75 V V_DSS accommodates solar panel open-circuit voltages up to about 50 V in 24 V nominal systems, and its 209 A continuous current supports charge currents of 80-120 A through a heat-spreader. Used as the main switching element in a buck-type MPPT controller, its 4.5 mOhm R_DS(on) maintains efficiency above 96 percent at 60 A load. The 175 C junction temperature allows high-power operation in outdoor enclosures with limited active cooling. A heatsink with thermal pad to chassis is recommended for sustained full-sun operation.
تجویز کردہ
Welding Inverter Front End
The IRFP2907PBF is widely used as the primary-side switch in low-voltage (24 V/48 V) inverter welders and plasma cutters. Its 209 A rating easily handles the burst currents of 100-150 A during welding arcs, while the HEXFET avalanche rating absorbs the energy of load transients. Two IRFP2907PBF devices in parallel share the load, each dissipating roughly 30-50 W during steady welding. The TO-247AC package bolts directly to an aluminum heatsink, simplifying mechanical integration into the rugged enclosure. Designers should use a 10-47 ohm gate resistor to suppress ringing during the arc strike.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFP2907PBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFP4368PBF | IRFP4468PBF | IRFB4110PBF | IRF3205PBF | IRFP250MPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-247AC | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same |
| V_DSS (V) | 75 | 75 | 100 | 100 | 55 | 200 |
| Continuous I_D at 25 C (A) | 209 | 350 | 195 | 180 | 110 | 75 |
| R_DS(on) at 10 V (mOhm) | 4.5 | 3.3 | 8.7 | 4.5 | 8.0 | 12 |
| Gate Charge Q_g (nC) | 410 | 520 | 380 | 370 | 146 | 180 |
| Power Dissipation P_D (W) | 470 | 520 | 520 | 370 | 200 | 214 |
| Maximum Junction Temperature (C) | +175 | +175 | +175 | +175 | +175 | +175 |
اہم امتیازی خصوصیات
- Industry-leading R_DS(on) of 4.5 mOhm in 75 V TO-247AC class (بمقابلہIRF3205PBF)
- Higher continuous current (209 A) at same V_DSS than legacy IRF3205 (بمقابلہIRF3205PBF)
- Higher current headroom with same TO-247AC footprint (بمقابلہIRFP4368PBF)
ڈیزائن نوٹس
Estimated: at I_D = 50 A continuous and R_DS(on) = 4.5 mOhm, conduction loss is I^2 x R = 11.25 W. With TO-247AC junction-to-case thermal resistance of about 0.31 C/W (estimated from typical Infineon data), the junction rises roughly 3.5 C above case. If the case-to-sink interface uses a thermal pad (0.5 C/W) plus a 4 C/W heatsink, total rise from ambient is around 50 C, leaving comfortable margin to the 175 C junction limit. Always verify with the actual mounted thermal resistance in your assembly.
Keep the gate-drive loop as small as possible to minimize parasitic inductance. Place the gate-drive resistor (10-47 ohm) directly at the gate pin, and route the gate return to the source pin rather than to a distant ground. For switching frequencies above 50 kHz, add a 10 kohm gate-source pull-down resistor to ensure the FET stays off when the driver is tri-stated during power-up.
The TO-247AC mounting tab is electrically connected to the drain pin (pin 2). Mount the tab directly to the heatsink using a thermally conductive but electrically insulating pad (such as Bergquist Sil-Pad) if the heatsink is grounded, or use a plain thermal pad if the heatsink floats at drain potential. A loose mounting screw can increase thermal resistance by 30 percent or more and cause localized overheating under high load.
Driving the IRFP2907PBF directly from a 3.3 V or 5 V logic GPIO will leave it in the linear region, dissipating massive power and likely destroying the device. Always use a true gate-driver IC capable of delivering at least 10 V V_GS at the required peak gate current (roughly 1 A for a few hundred nanoseconds). For low-side switching, dedicated gate drivers such as the IRS4428STRPBF in the XAIPART catalog are drop-in solutions.
تعمیل کی معلومات
Pb-free and RoHS compliant per Infineon product page and Mouser listing. Not AEC-Q100 qualified (use automotive-grade variants if required). Halogen-free status not explicitly stated in the verified web data - left as unknown.
