BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon
MPN: BSS123IXTSA1 ✓ فعالBSS123IXTSA1 جائزہ
A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching, level shifting, and analog signal routing rather than for power conversion. Within the broader semiconductor taxonomy, the BSS123I belongs to the MOSFET family (metal-oxide-semiconductor field-effect transistor), which itself sits under discrete semiconductors and power-management switching devices. Small-signal N-channel MOSFETs like this one are commonly used as low-side switches, in driver stages, in DC-DC converter peripheral circuitry, and in load- and interface-switching applications where the load current does not exceed a few hundred milliamps.
Key electrical features of the BSS123IXTSA1 include a 100 V drain-source breakdown voltage, a typical on-resistance (RDS(on)) of about 2.4 ohm at VGS=10 V (with a maximum of 6 ohm per the family datasheet), and a low gate threshold voltage that allows direct 3.3 V or 5 V logic-level drive. The device is housed in the industry-standard SOT-23-3 footprint, providing excellent thermal coupling to the PCB copper pour and enabling reflow-compatible surface-mount assembly.
The OptiMOS process technology used in this part delivers a clean, well-controlled transfer characteristic and tight threshold-voltage distribution, which simplifies parallel-device use and ensures predictable switching behavior across temperature. The combination of low gate charge, low input capacitance, and fast switching edges makes the BSS123IXTSA1 a practical choice for high-frequency small-signal paths.
Typical applications include low-side switching in battery management and power-path controllers, level-shifters between 1.8 V/3.3 V logic and 12 V/24 V loads, signal multiplexing in instrumentation and test equipment, and discrete driver stages for relays, LEDs, and small solenoids. The 100 V rating provides ample headroom for 12 V and 24 V industrial buses.
When designing with the BSS123IXTSA1, observe the 500 mW power dissipation limit of the SOT-23 package and derate appropriately above 25C ambient. For pulse loads, the safe operating area defined in the Infineon datasheet should be respected. Use a gate-source pull-down resistor to prevent inadvertent turn-on during MCU reset.
This page combines verified distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to support component selection, sourcing, and PCB-level integration.
کے لیے ڈراپ اِن متبادل BSS123IXTSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSS123IXTSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Drain-Source Voltage (VDS), Continuous Drain Current (ID), FET Type, Gate Threshold Voltage (VGS(th)).
BSS123I
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSS123NH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →VB1106K
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS123IXTSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Technology | OptiMOS Small-Signal |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA |
| Power Dissipation (PD) at TA=25C | 500 mW |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm |
| RDS(on) (max per family datasheet) | 6 ohm |
| پیکیج | PG-SOT-23-3 (SOT-23-3) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (per family datasheet) |
| Qualification | Industrial |
| Configuration | Single N-Channel |
| Lead-Free / RoHS | Yes (per distributor listing) |
| Gate Drive Logic Level | Logic-level compatible |
BSS123IXTSA1 پن کنفیگریشن
| پن 1 | Gate — MOSFET gate control input; logic-level compatible |
| پن 2 | Source — MOSFET source terminal; typically tied to circuit ground in low-side switching |
| پن 3 | Drain — MOSFET drain terminal; switches the load |
عام استعمالات
BSS123IXTSA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Low-Side Switching in Battery Management, Logic-Level Level Shifter 3.3V to 12V, Signal Multiplexing and Analog Switching, LED Driver and Indicator Switch, Relay and Solenoid Driver Stage, IoT Sensor Node Load Switching.
Low-Side Switching in Battery Management
The BSS123IXTSA1 serves as a low-side switch in battery management and protection circuits, where its 100 V VDS rating easily covers 4S to 10S lithium packs (up to 42 V nominal). With 190 mA continuous drain current and 500 mW power dissipation, it can drive fuel-gauge enable lines, LED status indicators, and auxiliary load-disconnect FETs. The 2.4 ohm typical RDS(on) at VGS=10 V keeps conduction loss modest. Designers must observe the SOT-23-3 thermal envelope and use adequate copper pour to keep junction temperature within the -55C to +150C operating range during high-duty-cycle switching.
تجویز کردہ
Logic-Level Level Shifter 3.3V to 12V
Used as a low-side level translator, the BSS123IXTSA1 accepts 3.3 V GPIO drive from an MCU and switches 12 V loads on its drain. Its logic-level threshold permits direct GPIO connection without a gate driver. The 100 V VDS provides ample margin for 24 V industrial rails. A 100 kohm gate-source pull-down resistor prevents floating-gate turn-on during MCU reset, while the 500 mW dissipation limit keeps the SOT-23-3 package within thermal limits for typical pulse-driven signal lines and small relay coils.
تجویز کردہ
Signal Multiplexing and Analog Switching
In test and instrumentation equipment, the BSS123IXTSA1 multiplexes low-current analog signals between ADC channels and sensor front-ends. Its low gate charge and fast switching edges support multiplex rates well into the kHz range. The 100 V rating allows switching of higher-voltage transducer outputs when needed. Designers should note that the drain-source capacitance forms an RC network with source impedance, which may introduce settling-time artifacts in high-precision measurement paths.
تجویز کردہ
LED Driver and Indicator Switch
The BSS123IXTSA1 efficiently PWM-drives indicator LEDs, status lamps, and optocoupler input diodes from a microcontroller GPIO. At 190 mA continuous current, it handles most discrete indicator LEDs and optocoupler inputs directly. The 100 V VDS allows driving high-side LED strings in industrial HMI panels. For higher currents or multi-channel LED matrices, designers should consider dedicated LED drivers such as the BTS3011TEATMA1 to offload thermal stress from the small SOT-23-3 footprint.
تجویز کردہ
Relay and Solenoid Driver Stage
The BSS123IXTSA1 drives small signal relays and solenoids in industrial control and white-goods applications, switching inductive loads on its drain. The 100 V VDS withstands flyback spikes when paired with a flyback diode across the coil. Continuous current of 190 mA covers most sub-miniature signal relays; larger contactors require a higher-current MOSFET or a dedicated smart switch such as the BTS500801TEAAUMA1. Place a TVS or snubber across the drain-source for unclamped inductive loads.
تجویز کردہ
IoT Sensor Node Load Switching
In battery-powered IoT sensor nodes, the BSS123IXTSA1 enables duty-cycled power to sub-circuits such as environmental sensors, radios, and ADCs, extending battery life through sub-microamp off-state leakage. Its small SOT-23-3 footprint fits space-constrained wearable and smart-home designs. The 100 V VDS rating supports USB-C VBUS hot-swap protection up to 20 V. Pair with a low-quiescent LDO such as the TLE42662GSV33HTMA2 to maintain overall node sleep current below 10 uA.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSS123IXTSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSS123I | BSS123 | VB1106K | 2N7002 |
|---|---|---|---|---|---|
| Package | SOT-23-3 (PG-SOT-23-3) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V (per cross-reference data) | 60 V |
اہم امتیازی خصوصیات
- Higher VDS rating (100 V) versus 2N7002 (60 V) (بمقابلہ2N7002 (onsemi))
- OptiMOS process technology (بمقابلہBSS123 (legacy Infineon))
- Higher power dissipation (500 mW vs 350 mW for 2N7002) (بمقابلہ2N7002 (onsemi))
ڈیزائن نوٹس
The BSS123IXTSA1 has a power dissipation limit of 500 mW at TA=25C in the SOT-23-3 package. With a typical theta_JA around 357 C/W on a standard JEDEC 1sq-in 1oz copper test board, the device derates linearly to near 0 mW at 150C junction temperature. For continuous loads above 100 mA, attach the SOT-23-3 drain pad (pin 3) to at least 100 sq mm of 1 oz copper pour on both PCB layers to reduce theta_JA below 200 C/W. Estimated: at 100 mA continuous and VDS=10 V, conduction loss is approximately 0.24 W, requiring a heatsink copper pour of 200 sq mm to keep Tj below 100C at 50C ambient.
Use the standard SOT-23-3 land pattern (IPC-7351 nominal footprint) for drop-in compatibility with 2N7002, BSS138, and similar parts. Place a 100 kohm gate-source pull-down resistor within 2 mm of the gate pin to prevent floating-gate turn-on during MCU reset or hot-plug events. Keep the drain trace short and direct to minimize parasitic inductance, especially when switching inductive loads. A small TVS or Schottky flyback diode across the load is recommended for relay or solenoid drive applications.
Do not assume the BSS123IXTSA1 will fully enhance at 2.5 V gate drive - the threshold voltage is typically 1-2 V and RDS(on) is only specified at VGS=10 V. For 3.3 V-only designs, verify that the actual RDS(on) at VGS=3.3 V still meets your load-current budget. Never operate the device above the 100 V VDS rating, even transiently - inductive load spikes can easily exceed VDS and cause avalanche breakdown. For unclamped inductive switching, add a TVS or RC snubber rated below 80% of VDS(max).
تعمیل کی معلومات
RoHS and lead-free per DigiKey and Mouser distributor listings; REACH and conflict-minerals compliance per Infineon product page. Industrial qualification only - not AEC-Q100 qualified for automotive.
