CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
MPN: CGD65C055SP2 ✓ فعالCGD65C055SP2 جائزہ
A GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) is a wide-bandgap semiconductor switch in the discrete-semiconductor hierarchy: GaN HEMT -> power transistor -> discrete semiconductor. Compared with silicon MOSFETs, GaN HEMTs offer much lower gate charge, zero reverse-recovery charge, and an order-of-magnitude lower switching loss, enabling higher switching frequencies (hundreds of kHz to MHz) without the efficiency penalty seen in Si. Cambridge GaN Devices (CGD) specialises in normally-off, enhancement-mode GaN with a robust gate interface that does not require a negative rail to keep the device off.
Key differentiating features include an integrated Miller clamp that suppresses false turn-on during fast transients, a wettable-flank BHDFN package for optical-inspection-friendly solder joints, and a thermal pad on the bottom side for direct PCB cooling. The 55 mΩ R_ds(on) at room temperature keeps conduction loss competitive with 600-650 V Si MOSFETs of similar die area, while the lower Qrr and Q_oss translate directly into reduced reverse-conduction loss in hard-switched half-bridges and totem-pole PFC stages.
Typical applications include telecom and server SMPS, on-board chargers for EVs, solar inverters, totem-pole PFC front stages, motor drives, and Class-D audio amplifiers. The 650 V rating provides ample margin over 400 V PFC rails (European rectified mains) and 380 V nominal solar-bus voltages.
When designing with this part, place a tight gate-drive loop (gate driver to gate-return) within 5 mm to minimise parasitic inductance that could otherwise cause Miller-induced dv/dt failures. Use a 0 V off-state gate bias for ICeGaN parts to leverage the genuine zero-volt turn-off specified in the datasheet, and consult the CGD application note on dead-time optimisation for half-bridges.
This page synthesises distributor pricing, drop-in alternative recommendations, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the CGD65C055SP2.
کے لیے ڈراپ اِن متبادل CGD65C055SP2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں CGD65C055SP2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Manufacturer, Package, RoHS Status, Technology.
CGD65A055S2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →CGD65C055SP
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
CGD65C055P2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
CGD65C055SP2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Cambridge GaN Devices (CGD) |
| Part Number | CGD65C055SP2 |
| ٹرانزسٹر کی قسم | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D) | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ |
| Gate Threshold Voltage (V_TH) | 3 V |
| Gate Drive Voltage Range | 9 V to 20 V |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode |
| پیکیج | BHDFN-9-1 (Bottom-side cooled, wettable flank) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Channel Type | N-Channel |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
CGD65C055SP2 پن کنفیگریشن
| پن 1 | Gate — Gate input, drive 9-20 V on, 0 V off (ICeGaN) |
| پن 2 | Kelvin Source — Kelvin source connection for gate-driver return |
| پن 3 | Source — Source (power) |
| پن 4 | Source — Source (power) |
| پن 5 | Source — Source (power) |
| پن 6 | Source — Source (power) |
| پن 7 | Source — Source (power) |
| پن 8 | Source — Source (power) |
| پن 9 | Drain — Drain (power, thermal pad electrically connected to drain) |
محفوظ آپریٹنگ ایریا (estimated from datasheet)
عام استعمالات
CGD65C055SP2 کے لیے موزوں ہے 6 ایپلیکیشنs: Server & Telecom SMPS, Totem-Pole PFC Front Stage, Solar / PV Inverter DCDC Stage, EV On-Board Charger PFC Stage, Class-D Audio Amplifier Output Stage, Industrial Motor Drive Inverter.
Server & Telecom SMPS
The CGD65C055SP2's 650 V rating and 55 mΩ R_DS(on) suit 400 V bus server and telecom SMPS designs. Compared with 600 V silicon MOSFETs of similar die area, the GaN HEMT cuts switching loss by 60-70% and eliminates reverse-recovery loss in the high-side device, allowing 100-200 kHz switching frequencies that shrink magnetics by 2-3x. The integrated Miller clamp suppresses dv/dt-induced false turn-on even with the higher dV/dt of GaN. Use the part in the primary-side hard-switched half-bridge, with 9-12 V gate drive and 0 V off-state bias to leverage ICeGaN's genuine zero-volt turn-off and meet 80 Plus Titanium efficiency targets.
تجویز کردہ
Totem-Pole PFC Front Stage
The CGD65C055SP2 is an excellent choice for hard-switching totem-pole PFC at 65 kHz to 1 MHz. The zero Qrr of the GaN HEMT eliminates the reverse-recovery loss that otherwise forces silicon MOSFETs into slow-switched, bridgeless-PFC topologies. The 27 A continuous current rating supports 3-5 kW PFC stages for server and EV charger applications. Place the gate-driver within 5 mm of the gate pin to minimise parasitic inductance, and consult the Cambridge GaN Devices dead-time optimisation application note to minimise body-diode conduction intervals. Expected efficiency exceeds 99% at 50% load in a 3 kW totem-pole PFC.
تجویز کردہ
Solar / PV Inverter DCDC Stage
In PV inverter DCDC boost stages the CGD65C055SP2 switches a 380 V nominal solar bus. The 650 V rating provides 70 V margin above the maximum power-point bus voltage. GaN's lower Qoss reduces switching loss in the hard-switched boost, and the BHDFN-9-1 bottom-cooled package simplifies heatsink attachment compared to top-cooled DFN parts. The integrated Miller clamp avoids shoot-through when paired with a high-performance SiC or GaN gate driver. Use 100 kHz to 500 kHz switching to shrink the boost inductor by 4x versus a 20 kHz silicon implementation.
تجویز کردہ
EV On-Board Charger PFC Stage
The CGD65C055SP2 suits EV on-board charger (OBC) PFC and DCDC stages in the 6.6-22 kW range. Its 650 V rating directly supports 400 V rectified bus rails, and the 27 A current rating parallel-friendly for 11 kW OBCs. Cambridge GaN Devices operates automotive IATF 16949 processes; AEC-Q101 qualification status should be confirmed on the specific automotive-grade part variant. The 55 mΩ R_DS(on) keeps conduction loss manageable across a wide load range, and the 9-20 V gate-drive window simplifies interface with automotive 12 V gate drivers.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The CGD65C055SP2's low output charge and zero reverse-recovery charge translate directly into lower dead-time distortion in half-bridge Class-D audio amplifiers. The 27 A current rating supports 200-500 W per channel amplifier modules, and the high switching frequency (250 kHz to 1 MHz) shrinks the output LC filter to a small ferrite-and-film combination. Use the ICeGaN gate with a 12 V drive and 0 V off-state; the genuine zero-volt turn-off minimises idle-pop on power-up. Total Harmonic Distortion + Noise (THD+N) below 0.01% is achievable in a 250 W / 4 ohm amplifier at 1 kHz.
تجویز کردہ
Industrial Motor Drive Inverter
In industrial motor-drive inverters the CGD65C055SP2 enables 100 kHz PWM switching for lower audible noise and higher control bandwidth. The 650 V rating supports 480 V rectified bus rails, and the 27 A current rating fits 5-10 HP inverter modules. The BHDFN-9-1 bottom-side-cooled package couples directly to a heatsink or cold-plate for sustained 27 A operation. Expect 50-70% switching-loss reduction compared with a 600 V silicon IGBT at the same switching frequency, or 2-3x switching frequency at the same loss budget for finer PWM resolution.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا CGD65C055SP2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | CGD65A055S2 | CGD65C055SP | CGD65C055P2 |
|---|---|---|---|---|
| Package | BHDFN-9-1 (bottom-cooled, wettable flank) | BHDFN-9-1 - same | BHDFN-9-1 - same | BHDFN-9-1 - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices - same | Cambridge GaN Devices - same | Cambridge GaN Devices - same |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (I_D) | 27 A | 27 A | 27 A | 27 A |
| On-Resistance (R_DS(on)) | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Gate Threshold Voltage | 3 V | 3 V | 3 V | 3 V |
| Integrated Miller Clamp | Yes | Yes | Yes | Yes |
| Integrated Current Sense | Yes (current-sense pin) | No | No | Yes |
اہم امتیازی خصوصیات
- Genuine 0 V turn-off (ICeGaN technology) (بمقابلہGeneric depletion-mode GaN cascodes)
- Bottom-side cooled BHDFN-9-1 package with wettable flanks (بمقابلہStandard top-cooled DFN GaN packages)
- Integrated Miller clamp suppresses false turn-on (بمقابلہDiscrete 650 V silicon MOSFETs)
ڈیزائن نوٹس
Minimise the gate-drive loop (gate-driver output to gate pin to source/Kelvin return) to less than 5 mm total length to keep parasitic inductance below 2 nH. A high-dV/dt transition in a GaN HEMT can otherwise cause Miller-induced gate glitches and shoot-through. Use a Kelvin-source connection (pin 2) for the gate-driver return rather than the power source pins to avoid ground bounce. Keep the gate-driver PCB trace on an inner layer or a tight top-layer return path directly above/below it.
Estimated: at 27 A continuous current and 55 mΩ R_DS(on), conduction loss is approximately 40 W. The BHDFN-9-1 bottom-side cooled package couples the drain/thermal pad directly to the PCB bottom copper pour or to a cold-plate. Use at least 2 oz copper on both sides of the PCB in the drain-pad region, and consider thermal vias (12-16 vias in a 0.3 mm pitch) for board-level cooling. For sustained operation above 30 W dissipation, attach a heatsink or cold-plate directly to the bottom pad.
Do not apply a negative gate-bias supply with ICeGaN parts - the genuine 0 V turn-off is sufficient and a negative rail can damage the gate structure. Also ensure the dead-time in half-bridge stages is sufficient to prevent shoot-through but not so long that body-diode conduction causes excessive loss (typical optimum is 30-100 ns depending on load current). Verify the gate-drive slew rate (dV/dt) stays within the datasheet rating of [DATA_NEEDED: max dV/dt], and add a small RC gate resistor (5-15 Ω) for EMI tuning.
تعمیل کی معلومات
RoHS compliant per Cambridge GaN Devices product page. AEC-Q101 automotive grade should be confirmed for the specific automotive-grade part variant if needed for automotive designs. Cambridge GaN Devices operates IATF 16949 processes.
