H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix
MPN: H5AN8G8NAFR-RDC ✓ فعالH5AN8G8NAFR-RDC جائزہ
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant class of main-memory ICs in servers, workstations, and embedded computing systems. Within the memory hierarchy, a DDR4 SDRAM chip sits at the level of main system memory: it is a volatile DRAM IC that stores data in capacitor-based cells, refreshed continuously, and communicates with a memory controller over a source-synchronous, double-data-rate interface clocked by differential CK/CK# signals.
Key features of the H5AN8G8NAFR family include 8 Gbit density per die, a x8 I/O organization (1,073,741,824 x 8), operation at 1.2V nominal core supply (VDD/VDDQ) with a separate 2.5V VPP supply for wordline bootstrapping, and burst lengths of 8 (BL8) with on-die termination (ODT) and data mask (DM) support on the x8 configuration. The -RDC speed grade supports DDR4-2666 data-rate operation with JEDEC-standard timing.
Technically, DDR4 introduced bank-group architecture (four bank groups in the 8Gb monolithic die, eight banks total) allowing interleaved accesses to increase effective bandwidth, plus a reduced 1.2V signaling environment compared with DDR3's 1.5V, lowering dynamic power roughly proportional to V squared. The device uses differential data strobes (DQS/DQS#), a programmable CAS latency, and JEDEC mode-register configuration via MRS commands; a dedicated RESET# ball simplifies power-rail sequencing during system bring-up.
Typical applications include PC client and server DIMM modules (UDIMM, RDIMM, SODIMM), embedded and industrial motherboards, networking equipment line cards, and set-top or smart-TV platforms that require dense main memory. In module designs, nine x8 devices build an ECC-equipped 8GB rank.
Design consideration: respect the JEDEC DDR4 power-up sequence - apply VPP before or with VDD, hold RESET# low until all supplies stabilize, and provide accurate on-die termination settings; AC timing and routing must follow fly-by termination practice for multi-rank loads.
This page synthesizes datasheet facts, drop-in alternatives, pricing, and design notes not found in the raw manufacturer datasheet, providing engineers with a single citable reference.
کے لیے ڈراپ اِن متبادل H5AN8G8NAFR-RDC — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں H5AN8G8NAFR-RDC (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Interface, Package, Organization, Data Rate, RoHS Status.
H5AN8G8NAFR-PBC
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →H5AN8G8NAFR-TFC
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
H5AN8G8NAFR-UHC
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →H5AN8G8NMFR-TFC
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MT40A1G8AG-062E
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4A8G085WC-BCRC
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →H5AN8G8NAFR-RDC زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| میموری ٹائپ | DDR4 SDRAM |
| Density | 8 Gbit |
| تنظیم | 1G x 8 (x8) |
| انٹرفیس | DDR4 (Double Data Rate 4) |
| Speed Grade | -RDC (DDR4-2666 class) |
| ڈیٹا ریٹ | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | 1.2 V |
| I/O Supply Voltage (VDDQ) | 1.2 V |
| Wordline Supply (VPP) | 2.5 V |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | 8 (BL8) |
| پیکیج | 78-ball FBGA |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Lead-Free | Yes |
| ہیلوجن فری | Yes |
| RoHS اسٹیٹس | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 |
H5AN8G8NAFR-RDC 78-ball fbga پن کنفیگریشن گائیڈ
H5AN8G8NAFR-RDC (78-ball fbga پیکیج) کے لیے پن کنفیگریشن۔ اس ڈیجیٹل IC میں GPIO، کمیونیکیشن انٹرفیس (UART، SPI، I2C) اور پاور پنز شامل ہیں۔ متبادل پن فنکشنز اور کنفیگریشن آپشنز کے لیے مینوفیکچرر کے ڈیٹا شیٹ سے رجوع کریں۔ ایمبیڈڈ سسٹم ڈیزائن اور PCB لے آؤٹ کے لیے ضروری۔
کے لیے تفصیلی پن آؤٹ ڈیٹا دستیاب نہیں H5AN8G8NAFR-RDC.
رجوع کریں ڈیٹا شیٹ مکمل پن کنفیگریشن کے لیے۔
عام استعمالات
H5AN8G8NAFR-RDC کے لیے موزوں ہے 6 ایپلیکیشنs: PC Client and SODIMM Main Memory, Server RDIMM and ECC Memory, Networking and Telecom Line Cards, Embedded and Industrial Motherboards, Set-Top Box and Smart TV Platforms, Test, Measurement, and Data Acquisition Systems.
PC Client and SODIMM Main Memory
The H5AN8G8NAFR-RDC provides 8Gb of main memory per device for notebook, mini-PC, and SODIMM assemblies. With x8 organization, eight devices build a 64-bit non-ECC 8GB rank; nine devices add SECDED ECC. Its DDR4-2666-class -RDC speed grade matches mainstream client controller training profiles, while the 1.2V VDD/VDDQ interface cuts I/O power relative to DDR3 by roughly 20% at comparable bandwidth. Designers place the devices on fly-by-routed command/address nets with on-die termination (ODT) absorbing reflections, and use the 2.5V VPP rail for wordline pumping. The trade-off versus lower-density parts is higher per-device idle current, so S3/S0ix power gating and CKE management become mandatory in battery-operated platforms.
تجویز کردہ
Server RDIMM and ECC Memory
In registered server modules, the x8 organization of the H5AN8G8NAFR-RDC enables single-device data correction (SDDC): nine x8 chips form a 72-bit ECC rank that survives an entire device failure. The DDR4 bank-group architecture delivers interleaved 2666 MT/s bandwidth per rank that registered clock drivers can sustain across dual-rank modules. Engineers mount the 78-ball FBGA devices with fly-by CA routing and per-pin length matching for DQ/DQS groups, then encode speed bin, ranks, and manufacturer data into SPD EEPROM for the BIOS memory-training engine. Because DDR4 training is vendor-sensitive, qualifying a second source such as MT40A1G8AG-062E on the same footprint protects server production against DRAM allocation swings.
تجویز کردہ
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards use the H5AN8G8NAFR-RDC as packet-buffer and lookup-table memory, where 8Gb density supports deep burst buffers at high throughput. The device's BL8 burst and four-bank-group structure sustain sustained sequential bandwidth suitable for QoS queuing engines reading and writing concurrently. Boards typically run the DRAM at 1.2V with careful stackup design (low-loss dielectric, reference planes) to meet DDR4-2666 eye masks at line-card temperatures. Because telecom equipment demands long service life, the RoHS-compliant, Lead-Free and Halogen-Free construction simplifies environmental compliance, and designers should verify the -RDC commercial temperature classification against their board-level ambient specification before release.
تجویز کردہ
Embedded and Industrial Motherboards
Industrial PCs, medical instruments, and factory HMI controllers integrate the H5AN8G8NAFR-RDC to obtain 8GB+ of main memory in compact footprints without SO-DIMM sockets. The 78-ball FBGA survives vibration profiles that defeat edge connectors, and the 1.2V signaling reduces EMI relative to DDR3 designs. Memory controllers in embedded SoCs (ARM/Intel embedded lines) provide DDR4 training with vendor-specific MR values, so qualification should include the SK hynix H5AN8G8NAFR dataset plus a cross-brand drop-in. Designers must implement the JEDEC power-up sequence with VPP-before-VDD ordering and RESET# held low through rail ramp, then budget refresh current in thermally enclosed enclosures where 85C-class ambient limits apply.
تجویز کردہ
Set-Top Box and Smart TV Platforms
Digital set-top boxes and 4K smart-TV SoCs use the H5AN8G8NAFR-RDC for multi-stream video buffering, graphics frame buffers, and conditional-access workloads that exceed what stacked-package memory can supply. A single 8Gb x8 device gives 1GB on one footprint; two devices cover mainstream 2GB BOMs. The DDR4-2666-class interface provides the bandwidth headroom for simultaneous 4K decode and UI composition, while CKE clock gating minimizes idle power for energy-star compliance. Consumer platforms value the RoHS-compliant Lead-Free/Halogen-Free construction for global certification. Layout teams should keep DQS/DQ length matching within DDR4-2666 skew budgets and place 0.1uF plus 10uF decoupling per device on the 1.2V VDDQ plane to control simultaneous-switching noise.
تجویز کردہ
Test, Measurement, and Data Acquisition Systems
High-speed oscilloscopes, logic analyzers, and data-acquisition instruments use the H5AN8G8NAFR-RDC as deep capture memory, streaming ADC samples into 8Gb-deep buffers. The device's high sequential write bandwidth at 2666 MT/s class matches multi-GSPS sample streams after demultiplexing, and BL8 bursts align naturally with burst-buffer write scheduling. Instruments demand deterministic latency, so designers disable controller prefetch speculation or account for refresh (tRFC) stalls in trigger-alignment firmware. The 78-ball FBGA withstands the thermal cycling of rack environments, and the 1.2V interface simplifies power-tree design alongside modern FPGA platforms. Qualify both SK hynix and cross-brand drop-ins (MT40A1G8AG-062E) to de-risk long instrument production lifecycles against DRAM EOL events.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا H5AN8G8NAFR-RDC — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | H5AN8G8NAFR-PBC | H5AN8G8NAFR-UHC | MT40A1G8AG-062E | K4A8G085WC-BCRC |
|---|---|---|---|---|---|
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Interface / Class | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Core Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
اہم امتیازی خصوصیات
- Highest-speed suffix in the N-die NAFR x8 family (بمقابلہH5AN8G8NAFR-UHC)
- JEDEC cross-brand pin compatibility (بمقابلہMT40A1G8AG-062E)
- Lead-Free, Halogen-Free, RoHS-compliant construction (بمقابلہH5AN8G8NMFR-TFC)
ڈیزائن نوٹس
The H5AN8G8NAFR-RDC requires three rails: VPP 2.5V, VDD 1.2V, and VDDQ 1.2V. Follow the JEDEC DDR4 power-up order: VPP before or with VDD/VDDQ, and hold RESET# low through rail ramp until all supplies are stable. Estimated: at DDR4-2666-class operation a single 8Gb device can draw roughly 300-500 mA peak on VDDQ during bank-group interleaved bursts (verify with the datasheet IDD tables on page 31), so budget the 1.2V VRM with margin and decouple with bulk 100uF plus per-device 0.1uF/10uF ceramics.
Route DQ/DQS/DM as length-matched groups with on-die termination enabled; keep DQS-to-DQ skew within the DDR4-2666-class setup/hold budget. For multi-device loads (DIMM-style), use fly-by routing on clock, command, and address with ODT compensating for the transmission-line taper. Place the ZQ calibration resistor (240 ohm, 1%) within 5 mm of the ZQ ball with a solid ground return. Reference all high-speed nets to an unbroken ground plane and avoid splitting the reference under DQ groups.
Do not issue MRS commands before supply stabilization or release RESET# early - these are the two most frequent DDR4 bring-up failures. Do not mix speed grades on a shared bus without configuring the controller for the slower bin. Note the -RDC 'D' temperature classification: confirm it matches your board's worst-case ambient before selecting this suffix for enclosed or industrial products. Finally, DDR4 training is vendor-sensitive; if you substitute a Micron or Samsung drop-in, re-run memory training and validate the full MR programming set.
تعمیل کی معلومات
Lead-Free & Halogen-Free (RoHS Compliant) per SK hynix H5AN8G8NAFR-RDC datasheet description. REACH and conflict-minerals status not stated in provided data. AEC-Q100 qualification not stated - assume commercial grade only.