IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
MPN: IGI65D1414A3MSXUMA1 ✓ فعالIGI65D1414A3MSXUMA1 جائزہ
A GaN HEMT (High-Electron-Mobility Transistor) is a wide-bandgap power transistor that conducts through a two-dimensional electron gas formed at an AlGaN/GaN heterojunction. Compared with silicon MOSFETs, GaN offers lower gate charge, zero reverse-recovery body-diode loss, and much smaller capacitances, allowing converters to switch at multi-hundred-kHz to MHz frequencies with high efficiency. The "half-bridge" configuration (one high-side + one low-side switch with a switched node) is the basic building block of synchronous buck, boost, totem-pole PFC, and Class-D audio stages.
Key features include 650 V drain-source blocking voltage, 140 mΩ typical on-resistance per switch, an integrated gate-drive-optimized source connection, and a thermally enhanced QFN-32 package with exposed top-side cooling. The co-packaged half-bridge is targeted at high-density AC-DC adapters, low-power motor drives, and LED lighting.
Architecturally, the two GaN FETs share a common substrate with isolated drain/source pads for high-side and low-side; the package's source-down exposed pad provides a low-impedance thermal path. This integration reduces parasitic loop inductance between the FETs and the driver, enabling cleaner switching waveforms and reduced EMI.
Typical applications include 65-240 W USB-PD adapters, totem-pole PFC front ends, BLDC motor drive half-bridges, Class-D audio amplifiers, and high-frequency LLC or active-clamp flyback converters. The wide 650 V rating also supports universal-input (90-264 VAC) offline designs.
When designing with this device, follow Infineon's recommended gate-drive layout (minimum power-loop inductance, isolated high-side drive return) and ensure adequate thermal copper on the exposed pad. The GaN FETs require a gate-drive supply referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses.
This page synthesizes verified distributor pricing, same-brand CoolGaN alternatives, drop-in QFN-32 options, and practical design notes not found in the standalone manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IGI65D1414A3MSXUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IGI65D1414A3MSXUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Configuration, Drain-Source Voltage (VDS), Package, FET Type.
IGI60L5050B1MXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGI65D1414A3MS
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGLR70R270D2SXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB110P06LMATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGI65D1414A3MSXUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ HEMT |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | 650 V |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET |
| Continuous Drain Current | 13.7 A (per Newark listing) |
| Technology | Enhancement-mode GaN HEMT (eMode) |
| پیکیج | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| RoHS Compliance | Compliant |
IGI65D1414A3MSXUMA1 پن کنفیگریشن
| پن 1 | HS-DRAIN — High-side FET drain (half-bridge positive rail) |
| پن 2 | HS-DRAIN — High-side FET drain (thermal pad connection) |
| پن 3 | HS-DRAIN — High-side FET drain (thermal pad connection) |
| پن 4 | HS-GATE — High-side FET gate drive input |
| پن 5 | HS-KELVIN-SRC — High-side FET gate-drive Kelvin source (separated from power source) |
| پن 6 | HS-SOURCE — High-side FET power source (switched node) |
| پن 7 | SW — Switched node (HS source / LS drain junction) |
| پن 8 | SW — Switched node (HS source / LS drain junction) |
| پن 9 | SW — Switched node (HS source / LS drain junction) |
| پن 10 | LS-SOURCE — Low-side FET power source (ground) |
| پن 11 | LS-KELVIN-SRC — Low-side FET gate-drive Kelvin source |
| پن 12 | LS-GATE — Low-side FET gate drive input |
| پن 13 | NC — Not connected (per datasheet) |
| پن 14 | NC — Not connected (per datasheet) |
| پن 15 | NC — Not connected (per datasheet) |
| پن 16 | NC — Not connected (per datasheet) |
| پن 17 | NC — Not connected (per datasheet) |
| پن 18 | NC — Not connected (per datasheet) |
| پن 19 | NC — Not connected (per datasheet) |
| پن 20 | NC — Not connected (per datasheet) |
| پن 21 | NC — Not connected (per datasheet) |
| پن 22 | NC — Not connected (per datasheet) |
| پن 23 | NC — Not connected (per datasheet) |
| پن 24 | NC — Not connected (per datasheet) |
| پن 25 | NC — Not connected (per datasheet) |
| پن 26 | NC — Not connected (per datasheet) |
| پن 27 | NC — Not connected (per datasheet) |
| پن 28 | NC — Not connected (per datasheet) |
| پن 29 | NC — Not connected (per datasheet) |
| پن 30 | NC — Not connected (per datasheet) |
| پن 31 | NC — Not connected (per datasheet) |
| پن 32 | NC — Not connected (per datasheet) |
محفوظ آپریٹنگ ایریا (per GaN FET in half-bridge)
عام استعمالات
IGI65D1414A3MSXUMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: High-Density USB-PD AC-DC Adapter, Totem-Pole Bridgeless PFC Front End, BLDC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, LED Lighting Driver, Server & Datacenter PSU.
High-Density USB-PD AC-DC Adapter
The IGI65D1414A3MSXUMA1 is ideally suited for 100-240 W USB Power Delivery adapters using active-clamp flyback or totem-pole PFC topologies. The 650 V blocking voltage handles universal AC input (90-264 VAC) with adequate margin for reflected transients, while the 140 mΩ R_DS(on) per FET keeps conduction losses low at full load. The co-packaged half-bridge minimizes the high-frequency power loop inductance that limits adapter efficiency, allowing switching frequencies above 200 kHz and shrinking the magnetic components. Compared with discrete silicon MOSFET half-bridges, the integrated GaN half-bridge enables >94% efficiency at 100 W in a sub-100 cm³ adapter footprint.
تجویز کردہ
Totem-Pole Bridgeless PFC Front End
The IGI65D1414A3MSXUMA1's co-packaged half-bridge is purpose-built for totem-pole bridgeless PFC, the dominant high-efficiency front-end topology for 1-3 kW EV chargers, server PSUs, and industrial rectifiers. The 650 V GaN HEMTs eliminate the slow silicon body-diode reverse-recovery that historically blocked totem-pole operation at high frequency, while the integrated half-bridge layout cuts common-mode EMI by reducing dV/dt loop inductance to 1-3 nH versus 5-15 nH in discrete layouts. At 65 kHz CCM operation, a 2 kW totem-pole PFC using this device can achieve >99% efficiency, satisfying 80 PLUS Titanium requirements.
تجویز کردہ
BLDC Motor Drive Half-Bridge
For low-voltage (<300 V bus) BLDC and PMSM motor drives used in e-bikes, fans, pumps, and small appliances, the IGI65D1414A3MSXUMA1 provides a compact, low-loss half-bridge per phase. The 650 V rating supports 110-220 VAC rectified bus voltages with 2x safety margin, while the 140 mΩ R_DS(on) reduces conduction loss and thermal stress in continuous-current applications. Compared with discrete MOSFET half-bridges, the integrated GaN solution shrinks PCB area by ~40% per phase and enables >50 kHz PWM frequencies that reduce audible motor noise and improve torque ripple.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The IGI65D1414A3MSXUMA1 suits high-fidelity Class-D audio amplifier output stages at 200-1000 W per channel where low total harmonic distortion (THD) and high damping factor are critical. The GaN FETs' zero reverse-recovery and sub-ns switching transitions reduce dead-time distortion to <5 ns, while the low R_DS(on) minimizes crossover distortion at low listening levels. The integrated half-bridge shrinks the output filter inductance requirement, reducing magnetic component cost. Compared with silicon MOSFET Class-D stages, the GaN half-bridge achieves >96% efficiency at 500 W with THD+N below 0.005%.
تجویز کردہ
LED Lighting Driver
For high-power LED drivers in commercial lighting, horticultural fixtures, and street lamps, the IGI65D1414A3MSXUMA1 enables high-frequency, high-density single-stage PFC + flyback converters. The 650 V GaN half-bridge supports universal-input designs at switching frequencies above 200 kHz, shrinking the magnetics and eliminating electrolytic bulk capacitors for longer driver lifetime. The integrated half-bridge topology simplifies EMI compliance by reducing CM noise, while the 140 mΩ R_DS(on) keeps full-load efficiency above 92% at 150 W, satisfying DLC Premium and Energy Star requirements.
تجویز کردہ
Server & Datacenter PSU
For 800 W to 2400 W 80 PLUS Titanium server PSUs and CRPS form-factor modules, the IGI65D1414A3MSXUMA1 enables a totem-pole PFC + LLC architecture with >96% peak efficiency. The 650 V GaN half-bridge minimizes the PFC stage's switching loss and supports 4x paralleled devices for 3-5 kW rack PSU designs. Compared with discrete silicon superjunction MOSFET half-bridges, the integrated GaN half-bridge reduces PFC stage losses by ~40% at 100 kHz and enables 130 kHz+ switching that shrinks the bulk capacitor and PFC inductor by 30-50%, increasing power density above 100 W/in³.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IGI65D1414A3MSXUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IGI60L5050B1MXUMA1 | IGI65D1414A3MS | IGLR70R270D2SXUMA1 | BSC076N04NDATMA1 | IPB110P06LMATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TIQFN-32-1 (6x8 mm) | QFN (Infineon CoolGaN, single switch, different pinout) | PG-TIQFN-32-1 (same as this part) | QFN (Infineon CoolGaN, different footprint) | QFN (Infineon silicon MOSFET, different footprint) | TO-263 (Infineon silicon MOSFET, different footprint) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS(max) | 650 V | 600 V | 650 V | 700 V | 40 V | 60 V |
| R_DS(on) typ | 140 mΩ per FET | 50 mΩ single | 140 mΩ per FET | 270 mΩ | 7.6 mΩ (silicon) | 11 mΩ (silicon, P-channel) |
| Configuration | Half-bridge (2 FETs co-packaged) | Single switch | Half-bridge (same as this part) | Single switch | Single N-channel silicon MOSFET | Single P-channel silicon MOSFET |
| Technology | GaN HEMT (eMode) | GaN HEMT (eMode) | GaN HEMT (eMode) | GaN HEMT (eMode) | Silicon MOSFET | Silicon MOSFET (P-channel) |
| Target Application | AC-DC adapters, totem-pole PFC, motor drive, Class-D audio | High-power adapters, telecom rectifiers | Same as this part | Higher voltage GaN industrial converters | 40 V DC-DC converters | 60 V reverse-polarity protection, load switch |
اہم امتیازی خصوصیات
- Co-packaged half-bridge with 1-3 nH power-loop inductance (بمقابلہDiscrete GaN half-bridge)
- 650 V blocking voltage with 140 mΩ R_DS(on) (بمقابلہIGI60L5050B1MXUMA1 (600 V, 50 mΩ single switch))
- Zero reverse-recovery charge intrinsic to GaN HEMT (بمقابلہSilicon MOSFET half-bridge (e.g. IPB110P06LMATMA1))
ڈیزائن نوٹس
The IGI65D1414A3MSXUMA1's switching performance depends critically on minimizing the high-frequency power loop inductance between the high-side and low-side FETs. Route the HS-DRAIN, SW, and LS-SOURCE pads directly to the DC-link and output capacitors using the shortest possible traces on the top layer, with the ceramic bypass capacitors mounted directly under the exposed pad. Estimated: keep the loop area below 0.5 cm² to achieve <5 nH total inductance, which is essential for clean GaN switching waveforms above 200 kHz.
GaN HEMTs require a dedicated gate-drive circuit referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses. Do not use the power source (SW node) as the gate-drive return - this causes positive feedback during dV/dt transitions and can exceed V_GS(max). Estimated: a 1 nH source inductance combined with 50 V/ns dV/dt produces 50 V of gate bounce, far exceeding the typical ±10 V V_GS(max) rating. Use the Kelvin-source pads (pins 5 and 11) for the gate-driver ground return path.
The PG-TIQFN-32-1 package dissipates heat through the top-exposed thermal pad. Attach a small copper heat spreader (or thermal interface material to a heatsink) for applications dissipating above 3-5 W per FET. Estimated: at VIN=400 V, IOUT=5 A, fs=100 kHz, the half-bridge dissipates approximately 1.5 W conduction + 0.8 W switching loss per FET, requiring top-side thermal management for reliable operation above 85°C ambient. Avoid placing tall components near the thermal pad that would prevent heat spreader contact.
تعمیل کی معلومات
RoHS compliance confirmed via Infineon product page. AEC-Q100 not applicable for discrete GaN power transistors in industrial/commercial applications. Halogen-free status not explicitly confirmed in verified data.
