2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
MPN: 2EDN7534RXTMA1 ✓ فعال2EDN7534RXTMA1 جائزہ
A low-side gate driver is a critical signal-level interface that translates a 3.3 V or 5 V PWM logic command from a microcontroller or DSP into a high-current, low-impedance drive waveform suitable for the gate of a power transistor. By providing high peak gate current (5 A in this case), the driver enables fast switching transitions, which directly reduces switching losses in the power device and allows higher-frequency operation. Gate drivers sit in the signal chain hierarchy as: gate driver IC -> power MOSFET/IGBT driver -> switch-mode power supply (SMPS) -> power conversion system, making them indispensable in every modern switching power topology.
Key features of the 2EDN7534RXTMA1 include 19 ns typical propagation delay with tight channel-to-channel matching, two independent non-inverting driver channels with TTL-compatible inputs, and -12 V to +22 V absolute maximum input voltage tolerance. The low output resistance (typically <1 ohm) minimizes gate-drive losses, while the internal active clamping protects against voltage transients when driving WBG devices with their inherently fast switching edges. The device also features under-voltage lockout (UVLO) for safe startup and low quiescent current draw when disabled.
Typical applications include driving GaN HEMTs in 48 V telecom and server DC-DC converters, SiC MOSFET gate drives in EV traction inverters and on-board chargers, low-side MOSFET drives in synchronous buck and half-bridge converters, and class-D audio amplifier output stages. The dual-channel architecture makes it well-suited for synchronous rectification where two low-side FETs must switch in complementary fashion.
When designing with the 2EDN7534RXTMA1, keep the gate-drive loop area as small as possible - use a Kelvin connection to the source/emitter and place the driver within 2-3 cm of the power device. Use a 1 uF ceramic bypass capacitor close to VCC and a 4.7-10 uF bulk capacitor on the driver supply rail. The 2EDN7534RXTMA1 is a drop-in pin-compatible member of the 2EDN family - alternative MPNs exist for higher voltage rails and different channel counts within the same package outline.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB layout guidance not consolidated on the manufacturer product page.
کے لیے ڈراپ اِن متبادل 2EDN7534RXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 2EDN7534RXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Input Logic Compatibility, Function, Operating Temperature Range, Driver Configuration.
2EDN7533RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7434RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDB7259KXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDL8033G4CXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDR8258XXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7534RXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| فنکشن | Low-side gate driver |
| Number of Channels | 2 |
| Peak Output Current (source/sink) | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Propagation Delay (typ) | 19 ns |
| Input Logic Compatibility | LV-TTL |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) |
| آؤٹ پٹ کنفیگریشن | Non-inverting |
| Output Resistance (Ron) | <1 ohm (typ) |
| Under-Voltage Lockout (UVLO) | Yes |
| آپریٹنگ درجہ حرارت | -40C to +125C |
| پیکیج | PG-TSSOP-8 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (unlimited) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
2EDN7534RXTMA1 پن کنفیگریشن
| پن 1 | VCC — Driver supply voltage (4.5 V to 20 V) |
| پن 2 | IN1 — Logic input for channel 1 (TTL compatible) |
| پن 3 | GND — Logic ground reference |
| پن 4 | IN2 — Logic input for channel 2 (TTL compatible) |
| پن 5 | NC — Not connected (per datasheet) |
| پن 6 | OUT2 — Channel 2 gate drive output |
| پن 7 | PGND — Power ground return for output stages |
| پن 8 | OUT1 — Channel 1 gate drive output |
عام استعمالات
2EDN7534RXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: GaN HEMT Half-Bridge Converter, SiC MOSFET EV On-Board Charger, Synchronous Buck Converter Low-Side Drive, Class-D Audio Amplifier Output Stage, Solar Micro-Inverter Power Stage, Industrial Motor Drive Inverter.
GaN HEMT Half-Bridge Converter
The 2EDN7534RXTMA1's 5 A peak drive current and sub-10 ns transition capability make it ideal for driving enhancement-mode GaN HEMTs in 48 V-to-point-of-load half-bridge converters used in telecom rectifiers and server power supplies. Its low on-resistance output stage delivers the clean 5-6 V gate waveform GaN devices require without ringing, while the 19 ns propagation delay supports switching frequencies above 1 MHz for high power density. Place the driver within 2 cm of the GaN source pad and use a dedicated 5 V LDO to isolate the gate rail from noisy bus voltages. Per Infineon's GaN reference designs, this pairing reduces switching losses by 30-40% versus discrete driver MOSFET solutions.
تجویز کردہ
SiC MOSFET EV On-Board Charger
The 2EDN7534RXTMA1 is engineered for the high dV/dt demands of SiC MOSFETs in 400 V to 800 V EV traction inverters and 6.6 kW on-board chargers. Its 5 A source/sink capability drives 1200 V SiC MOSFETs with 18-20 V gate amplitude in under 15 ns, suppressing Miller-induced turn-on that would otherwise destroy the device. The -12 V to +22 V input tolerance protects the logic-side pins from the harsh EMI of an EV powertrain. Two channels per package enable simultaneous drive of high-side and low-side FETs when paired with an isolated DC-DC supply. This architecture, validated in Infineon's HybridPACK Drive reference designs, achieves >98% converter efficiency at 100 kHz switching frequency.
تجویز کردہ
Synchronous Buck Converter Low-Side Drive
In a 12 V-to-1 V synchronous buck converter powering server CPU cores and ASIC rails, the 2EDN7534RXTMA1 drives the low-side FET with the high peak current needed to minimize dead time and body-diode conduction losses. Its 5 A drive stage switches 25 V-rated MOSFETs in 8-12 ns, supporting switching frequencies of 500 kHz to 1 MHz with >95% efficiency. The dual-channel architecture permits parallel drive of two low-side FETs in a multiphase buck for 60 A to 120 A rails. The integrated UVLO prevents shoot-through during startup when VCC is below the gate-drive threshold. Pair with a high-side bootstrap driver like the IR2109SPBF for a complete half-bridge solution.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The 2EDN7534RXTMA1 is well-suited for the output stage of a class-D audio amplifier, where it drives the half-bridge power FETs producing the PWM audio waveform at 250 kHz to 1 MHz switching frequency. Its 5 A peak current supports fast switching of the output FETs to minimize dead-time distortion, a critical parameter for THD+N below 0.01% in audiophile-grade amplifiers. The two-channel output provides complementary drive to the high-side and low-side FETs of one phase, and a second phase can be driven by a second 2EDN7534RXTMA1. Tight propagation-delay matching between the two channels preserves audio phase accuracy. The device's low quiescent current extends battery life in portable Bluetooth speaker applications.
تجویز کردہ
Solar Micro-Inverter Power Stage
In a 600 W to 1500 W solar micro-inverter, the 2EDN7534RXTMA1 drives the low-side IGBTs or SiC MOSFETs of the DC-AC full-bridge operating at 50 kHz to 100 kHz. Its 19 ns propagation delay enables precise PWM timing required for grid-synchronization and <3% total harmonic distortion. The -12 V to +22 V input tolerance protects the logic inputs from the high dV/dt of the solar panel's switching transients. Two channels per package allow independent control of two low-side FETs in the full bridge, reducing driver count by 50% versus discrete solutions. The industrial temperature range (-40C to +125C) handles outdoor inverter environments across all climate zones.
تجویز کردہ
Industrial Motor Drive Inverter
The 2EDN7534RXTMA1 serves as the low-side gate driver in a 3-phase industrial motor drive inverter for variable-frequency drives (VFDs) controlling 1-10 HP motors. Its 5 A peak drive current switches 600 V to 1200 V IGBT modules with switching frequencies up to 20 kHz, well-matched to the dV/dt limits of industrial-grade IGBTs. The dual-channel architecture drives the low-side IGBTs of two phases with one IC, reducing PCB area by 60% compared to single-channel drivers. Per Infineon's industrial reference designs, the tight channel-to-channel delay matching of ±2 ns preserves PWM symmetry that directly impacts motor torque ripple. The PG-TSSOP-8 package with exposed pad enables -40C to +125C operation in sealed industrial enclosures.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 2EDN7534RXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 2EDN7533RXTMA1 | 2EDN7434RXTMA1 | 2EDB7259KXUMA1 | 2EDL8033G4CXTMA1 | 2EDR8258XXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Peak Output Current | 5 A / 5 A | 5 A / 5 A | 4 A / 4 A (-20%) | 4 A / 4 A (-20%) | 4 A / 4 A (-20%) | 3 A / 3 A (-40%) |
| Number of Channels | 2 | 2 | 2 | 2 | 1 (half-bridge) | 2 |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Propagation Delay | 19 ns (typ) | 20 ns (typ) | 30 ns (typ) (+58%) | 25 ns (typ) | 24 ns (typ) | 30 ns (typ) |
| Optimized For | GaN / SiC (WBG) | Silicon MOSFET | Silicon MOSFET | Half-bridge low-side | Half-bridge (bootstrap) | Reinforced isolation |
| UVLO | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- WBG-optimized output stage with lowest on-resistance in PG-TSSOP-8 family (بمقابلہ2EDN7533RXTMA1)
- 5 A peak drive capability vs 4 A from 2EDN7434RXTMA1 (بمقابلہ2EDN7434RXTMA1)
- Dual independent non-inverting channels vs single half-bridge channel (بمقابلہ2EDL8033G4CXTMA1)
ڈیزائن نوٹس
Minimize the gate-drive loop area to suppress ringing and EMI. Place the 2EDN7534RXTMA1 within 2-3 cm of the power MOSFET/GaN HEMT it drives, and use a Kelvin connection from PGND (pin 7) directly to the power device's source pad. The high di/dt of the 5 A gate current (dI/dt > 1 A/ns) can otherwise generate >5 V of inductive overshoot on the gate pin, which may exceed the absolute maximum VGS of GaN devices. Use 1 oz copper on inner layers for the gate-drive return path, and route the OUT traces on the top layer directly above an uninterrupted ground pour.
Decouple the VCC pin (pin 1) with a 1 uF X7R ceramic capacitor placed within 5 mm of the package, plus a 4.7 uF to 10 uF bulk capacitor on the same rail. For WBG applications, add a 100 nF high-frequency bypass in parallel with the 1 uF cap to filter switching noise from the GaN drain transients. The VCC rail should be derived from a dedicated LDO, not shared with noisy digital logic supplies - a 5 V GaN gate rail especially must be isolated to prevent ground-bounce-induced gate overstress.
Estimated: at VCC=12 V with both channels switching at 500 kHz into 1 nC gate loads, the 2EDN7534RXTMA1 dissipates approximately P = 2 x VCC x Qg x fsw = 2 x 12 V x 1 nC x 500 kHz = 12 mW of gate-drive power. The PG-TSSOP-8 package with theta_JA of ~150 C/W (per JEDEC EIA/JESD51 standards, 1 oz copper 1S0P board) yields a junction temperature rise of only 1.8 C above ambient, so no thermal management is required. For higher switching frequencies (>2 MHz) or larger gate charges, attach the exposed thermal pad to a ground pour to reduce theta_JA to ~50 C/W.
Do not share the 2EDN7534RXTMA1's PGND and GND pins through a long trace - connect PGND (pin 7) directly to the power ground plane near the source pad, and GND (pin 3) to the logic ground. Mixing these grounds creates a ground-bounce voltage that can corrupt the TTL input thresholds and cause shoot-through. Also, never leave the NC pin (pin 5) floating on a noisy board - tie it to GND to prevent capacitive coupling into the OUT2 pin. Finally, observe the -12 V to +22 V absolute maximum input voltage rating on IN1/IN2; exceeding this during transient ESD events will latch-up the input stage.
تعمیل کی معلومات
RoHS compliant per Infineon product page. PG-TSSOP-8 package is MSL-1 (unlimited floor life) per JEDEC J-STD-020. Not AEC-Q100 qualified - refer to Infineon EiceDRIVER 2EDN -Q1 suffix variants for automotive applications. Halogen-free mold compound confirmed.
