IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB039N10N3GATMA1 ✓ فعالIPB039N10N3GATMA1 جائزہ
A power MOSFET is a voltage-controlled majority-carrier switching transistor used to efficiently switch and amplify DC and low-frequency signals. Within the broader device taxonomy, this part sits in the hierarchy N-channel MOSFET -> power MOSFET -> discrete semiconductor -> transistor. The OptiMOS 3 family specifically targets synchronous rectification and primary-side switching in SMPS, leveraging trench-gate technology to minimize conduction and switching losses simultaneously.
Key specifications include a 100 V drain-to-source breakdown voltage (VDS), 160 A continuous drain current at TC, and an extremely low typical on-state resistance RDS(on) of approximately 3.9 mOhm at VGS = 10 V. The gate charge is optimized for high efficiency, with very low Q g and Q gd figures of merit that yield an excellent gate-charge x RDS(on) FOM. The part is rated MSL1 (moisture sensitivity level 1) and is RoHS-compliant plus halogen-free, suiting modern lead-free reflow profiles.
Architecturally, the IPB039N10N3GATMA1 uses Infineon's third-generation OptiMOS trench process, which reduces cell pitch and shrinks the die while maintaining avalanche ruggedness. The tab and 6-lead D2PAK-7 footprint give a low thermal resistance path, allowing the 214 W TC dissipation figure to translate into usable continuous current when properly mounted to a PCB copper pour.
Typical applications include primary-side switches in 48 V telecom and server DC-DC bricks, secondary-side synchronous rectifiers in telecom and datacom SMPS, solar inverters, motor-control H-bridges for industrial drives, hot-swap and OR-ing controllers, and automotive 12 V/24 V high-current loads. The combination of low RDS(on) and strong avalanche rating also suits battery-protection and e-fuse circuits.
When designing with this device, gate-drive voltage of 10 V is recommended for full RDS(on) performance, and the exposed tab must be soldered to a sufficiently large copper area to keep junction temperature within SOA. Designers should also verify dv/dt immunity in hard-switched topologies, as OptiMOS 3 is optimized for soft-switched or moderately hard-switched use.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-page reference for selecting and sourcing the IPB039N10N3GATMA1.
کے لیے ڈراپ اِن متبادل IPB039N10N3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB039N10N3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Operating Temperature Range, FET Type, Drain-Source Voltage (VDS), Package.
IPB039N10N3-G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB110P06LMATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB60R040CFD7ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ✓ اسٹاک میں
$5.19 / یونٹ
ڈیٹا شیٹ دیکھیں →IPB039N10N3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 160 A |
| Power Dissipation (PD) at TC=25C | 214 W |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| پیکیج | PG-TO263-7 (D2PAK-7, 6 leads + tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free |
| Series / Family | OptiMOS 3 |
IPB039N10N3GATMA1 پن کنفیگریشن
| پن 1 | Source — Source (low-side connection) |
| پن 2 | Source — Source (low-side connection) |
| پن 3 | Source — Source (low-side connection) |
| پن 4 | Gate — Gate (MOSFET gate drive input) |
| پن 5 | Source — Source (low-side connection) |
| پن 6 | Source — Source (low-side connection) |
| پن 7 | Drain (Tab) — Drain / exposed tab (high-side connection, heatsink) |
محفوظ آپریٹنگ ایریا (DC, TC=25C)
عام استعمالات
IPB039N10N3GATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom/Datacom SMPS Primary Switch, Secondary-Side Synchronous Rectifier, Solar Inverter / PV Boost Converter, Industrial Motor Drive H-Bridge, Hot-Swap / OR-ing Controller, Automotive 12V/24V High-Current Load.
48V Telecom/Datacom SMPS Primary Switch
The IPB039N10N3GATMA1's 100 V VDS rating and 3.9 mOhm RDS(on) at VGS=10V make it an excellent primary-side switch for 48 V telecom and datacom switched-mode power supplies (SMPS). Its OptiMOS 3 trench architecture minimizes conduction loss while the low Qg x RDS(on) figure of merit reduces switching loss at high frequencies (100-300 kHz). Placed on the primary side of a 48 V-to-isolated-low-voltage DC-DC brick, it delivers high efficiency in compact form factors.
تجویز کردہ
Secondary-Side Synchronous Rectifier
The IPB039N10N3GATMA1 is well-suited as a secondary-side synchronous rectifier in isolated DC-DC converters. The very low 3.9 mOhm RDS(on) directly reduces rectifier conduction loss, while the 100 V rating provides safe headroom for 36-75 V input telecom brick outputs. Compared to a Schottky diode, the synchronous-MOSFET topology typically improves efficiency by 2-4 percentage points at full load, especially at low output voltages (3.3V-12V).
تجویز کردہ
Solar Inverter / PV Boost Converter
In solar inverter boost and buck stages operating from 30-80 V PV strings, the IPB039N10N3GATMA1 provides 100 V VDS headroom plus the high pulse current capability needed during MPPT transitions. The 160 A ID rating handles the full boost inductor current, while the 3.9 mOhm RDS(on) minimizes conduction loss that directly reduces PV-to-grid conversion efficiency. The D2PAK-7 package simplifies heatsink attachment versus larger TO-247 parts.
تجویز کردہ
Industrial Motor Drive H-Bridge
For 24-48 V industrial motor drives, the IPB039N10N3GATMA1 forms one half of an H-bridge switching leg, handling 160 A peak currents for starting and overload events. The 100 V rating withstands back-EMF spikes from inductive motor windings, while the 3.9 mOhm RDS(on) reduces I2R heating during continuous PWM operation at 10-50 kHz. The robust D2PAK-7 thermal path supports sustained high-power PWM in robotic and servo-drive applications.
تجویز کردہ
Hot-Swap / OR-ing Controller
The IPB039N10N3GATMA1 functions as the high-current pass element in 48 V hot-swap and OR-ing circuits, where its 100 V VDS, 160 A ID, and low RDS(on) enable minimal voltage drop across the MOSFET in normal operation. During a fault, the part's avalanche ruggedness absorbs transient energy, and its low thermal resistance supports continuous high-current operation. Surface-mount D2PAK-7 also simplifies multi-PCB parallel layouts.
تجویز کردہ
Automotive 12V/24V High-Current Load
In automotive 12 V/24 V high-current applications such as electric power steering, brake systems, and heated-seat controllers, the IPB039N10N3GATMA1 provides the current capacity and voltage headroom required. The 100 V VDS rating easily handles 24 V truck bus transients, while the 3.9 mOhm RDS(on) minimizes conduction loss that would otherwise waste battery energy. For full automotive qualification, however, designers should select the -Q1 variant or AEC-Q100 qualified alternatives.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB039N10N3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB039N10N3-G | BSC076N04NDATMA1 | IPB110P06LMATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2DAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 40 V | -60 V (P-channel) | 600 V |
| Continuous Drain Current (ID) | 160 A | 160 A | ~50 A (lower) | ~80 A | ~30 A |
| RDS(on) at VGS=10V (typ) | 3.9 mOhm | 3.9 mOhm | ~7.6 mOhm | ~11 mOhm | ~40 mOhm |
| Technology / Family | OptiMOS 3 (trench) | OptiMOS 3 (same) | OptiMOS | OptiMOS P-channel | CoolMOS CFD7 |
| Channel Polarity | N-channel | N-channel | N-channel | P-channel | N-channel |
| Automotive Qualification | Not AEC-Q100 qualified | Not AEC-Q100 qualified | Not AEC-Q100 qualified | AEC-Q101 (automotive) | AEC-Q101 (automotive) |
اہم امتیازی خصوصیات
- Higher continuous current than same-package 100V N-channel alternatives (بمقابلہBSC076N04NDATMA1)
- Lower RDS(on) and higher current than complementary P-channel (بمقابلہIPB110P06LMATMA1)
- Much lower RDS(on) than higher-voltage CoolMOS alternative (بمقابلہIPB60R040CFD7ATMA1)
ڈیزائن نوٹس
Estimated: With 100 V VDS, 3.9 mOhm RDS(on), and 160 A peak ID, dissipation in continuous operation can reach 100 W. The D2PAK-7 package requires substantial PCB copper (at least 6 square inches of 2 oz copper) to keep junction temperature below 125C at full load. Without proper copper area, derate current by 50% or more. Always consult SOA curves in datasheet for sustained operation.
Place the gate drive return path (Kelvin source) directly between the gate-driver GND and the source pin (pin 4 adjacent to source pins). Avoid running high di/dt drain current under the gate trace - this causes inductive coupling that can false-trigger the gate. Use a 10-ohm gate resistor plus optional 100k pull-down on gate-to-source for Miller-clamp protection during high dv/dt switching.
Do not exceed the VGS maximum rating of +-20 V (10-12 V typical drive). Below VGS(th) (~3-4 V), the MOSFET is in linear region with high dissipation - gate-drive undervoltage will destroy the part. Ensure VGS stays at 10V minimum under all transient conditions, including power-up sequencing. Also, the exposed tab is electrically connected to the drain - isolate it from chassis ground.
Use thermal vias under the exposed tab to spread heat to inner copper layers. A 3x3 array of 0.3 mm thermal vias with 0.5 oz plating is the typical recommendation. Solder paste stencil aperture for the tab should be 50-70% coverage to avoid tombstoning and ensure void-free solder joint for lowest thermal resistance.
تعمیل کی معلومات
RoHS compliant and halogen-free per Infineon product page. Not AEC-Q100 qualified - for automotive, choose an AEC-Q101 qualified alternative such as IPB110P06LMATMA1.
