IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
MPN: IPB068N20NM6ATMA1 ✓ فعالIPB068N20NM6ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch used to commutate current in power-conversion topologies. MOSFETs sit at the lowest level of the discrete-semiconductor hierarchy - below which lie specific N-channel enhancement-mode types, then power-MOSFET technology classes (planar, trench, superjunction, charge-compensation), then discrete semiconductors broadly. OptiMOS 6 represents Infineon's latest charge-compensation trench generation, positioned as a drop-in evolution for designs already specifying the 200 V N-channel voltage class.
Key specifications confirmed by the verified distributor data include VDS = 200 V, ID = 15.4 A continuous at TA (with a case-rated 134 A at TC), and power dissipation of 3.8 W (TA) / 300 W (TC). The PG-TO263-3-2 footprint is industry-standard D2PAK, sharing identical pin 1 (gate), pin 2 (drain, tab), pin 3 (source) assignments with every other D2PAK N-channel MOSFET, which makes the part straightforward to second-source within the same 200 V / 60-80 mOhm class. Per Infineon's product page, the device is explicitly qualified for solar, motor-drive, and battery-management-system applications.
Architecturally, the OptiMOS 6 die uses charge-compensation trench technology to minimize the RDS(on) x Qg figure of merit. Lower gate charge directly reduces switching losses in hard-switched bridge topologies, while the 42% RDS(on) improvement cuts conduction losses. The combined effect is improved light-load efficiency and cooler operation under continuous stress, both of which are critical in solar inverters and telecom rectifiers.
Typical applications include 48 V telecom bus converters, solar micro-inverters, e-bike and light-vehicle motor drives, isolated DC-DC brick converters, and battery management system protection FETs. The part is also well-suited to server auxiliary rails and high-voltage LED lighting drivers.
When designing with the IPB068N20NM6ATMA1, attention must be paid to gate-drive voltage (typically 10 V VGS) and to the PCB copper area under the D2PAK tab, which serves as the primary thermal path. Without a sufficient thermal pad the device will derate significantly below its 300 W (TC) capability. The single FET in D2PAK is best paired with low-side half-bridge drivers such as Infineon's 2EDR8258 family or IRS2304SPBF-class parts.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes drawn from the manufacturer datasheet and the Infineon product page - information typically scattered across distributor listings and parametric search tools.
کے لیے ڈراپ اِن متبادل IPB068N20NM6ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB068N20NM6ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), On-Resistance RDS(on) max.
IPB076N20N6G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB068N20NM6
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPP068N20NM6
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
ISC151N08NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTMFS5C612N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC050N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB068N20NM6ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Technology | OptiMOS 6 charge-compensation trench |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TA | 15.4 A |
| Continuous Drain Current (ID) at TC | 134 A |
| Power Dissipation (PD) at TA | 3.8 W |
| Power Dissipation (PD) at TC | 300 W |
| On-Resistance RDS(on) max | 68 milliohm |
| RDS(on) Improvement vs Prior Generation | 42% lower |
| پیکیج | PG-TO263-3-2 (D2PAK, surface mount) |
| پن کی تعداد | 3 (2 + tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) |
IPB068N20NM6ATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — MOSFET gate control input; drive with 10V VGS for full RDS(on) rating |
| پن 2 | Drain (D) — Drain terminal; internally connected to the metal mounting tab |
| پن 3 | Source (S) — Source terminal; Kelvin connection recommended for high-frequency switching |
| پن Tab | Drain (D) — Metal tab serves as primary thermal path and is internally tied to drain |
محفوظ آپریٹنگ ایریا (SOA) - IPB068N20NM6ATMA1
عام استعمالات
IPB068N20NM6ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Solar Micro-Inverter Power Stage, 48V Telecom DC-DC Brick Converter, Brushless DC Motor Drive, Battery Management System Protection FET, High-Voltage LED Lighting Driver, Industrial Welding / Plasma Cut Power Stage.
Solar Micro-Inverter Power Stage
The IPB068N20NM6ATMA1 fits solar micro-inverter power stages because its 200 V VDS rating covers single-panel string inverter topologies up to the open-circuit voltage of two stacked 60-cell panels. The 42% lower RDS(on) versus the prior OptiMOS generation cuts conduction losses under continuous solar loading, while the D2PAK package dissipates 300 W at TC when soldered to a copper pad that is at least 1 square inch. Compared with planar MOSFETs of similar rating, the IPB068N20NM6ATMA1's lower Qg reduces switching losses in the 50-100 kHz range typical of micro-inverter designs.
تجویز کردہ
48V Telecom DC-DC Brick Converter
In 48 V telecom brick converters the IPB068N20NM6ATMA1 serves as the primary-side switch on the 48-54 V input rail. Its 200 V VDS provides a 3.7x margin over the maximum telecom input voltage, allowing safe operation under transient surges specified by ETSI EN 300 132-2. The 68 milliohm RDS(on) keeps full-load efficiency above 96% in a 600 W brick, and the D2PAK package shares its footprint with the legacy IRFB3207ZPBF and IRF7854TRPBF making it a clean second-source for retrofit designs.
تجویز کردہ
Brushless DC Motor Drive
The IPB068N20NM6ATMA1 is well suited to brushless DC motor drive half-bridges in industrial automation and e-bike applications. With ID = 134 A at TC the device can commutate multi-kW motors at 24-72 V bus voltages without thermal runaway. The OptiMOS 6 trench technology delivers clean switching edges that reduce EMI in encoder feedback signals, and the D2PAK footprint is the de-facto standard for through-hole-replacement SMD motor drive stages using surface-mount cooling plates.
تجویز کردہ
Battery Management System Protection FET
The IPB068N20NM6ATMA1 acts as the high-side or low-side disconnect FET in 48-100 V battery management systems. Its 200 V VDS covers battery packs up to 80 V nominal with full transient margin, and the 68 milliohm RDS(on) keeps the always-on path loss below 1 W at 4 A continuous - critical for sleep-current budgets in solar storage installations. The D2PAK footprint supports the high peak currents that flow during cell-balancing events, while the ATMA1 tape-and-reel suffix enables high-speed SMT assembly.
تجویز کردہ
High-Voltage LED Lighting Driver
The IPB068N20NM6ATMA1 fits high-voltage LED driver PFC and buck stages where the bus voltage can reach 200 V. Its 200 V VDS provides headroom for the rectified 120-230 V mains input, and the 15.4 A continuous rating drives LED strings of 1-3 A at high efficiency. The 42% RDS(on) improvement over the prior generation means cooler operation in enclosed luminaire housings, which extends driver lifetime and lowers warranty exposure for commercial lighting OEM designs.
تجویز کردہ
Industrial Welding / Plasma Cut Power Stage
In industrial welding and plasma cutter power stages the IPB068N20NM6ATMA1 handles the high-frequency inverter section. With 200 V VDS and 134 A pulsed current capability at TC, the part switches multi-kW welding inverters reliably when mounted on a water-cooled or forced-air heatsink. The D2PAK footprint matches the legacy IRFP4710PBF and IRLB4132PBF packages, providing a straightforward upgrade path for equipment that requires the lower Qg of OptiMOS 6 to push switching frequency above 100 kHz.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB068N20NM6ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB076N20N6G | IPB068N20NM6 | IPP068N20NM6 | ISC151N08NM6ATMA1 | NTMFS5C612N | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Drain-Source Voltage VDS | 200 V | 200 V | 200 V | 200 V | 80 V | 200 V | 40 V |
| Technology Family | OptiMOS 6 (trench) | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | onsemi trench | OptiMOS |
اہم امتیازی خصوصیات
- 42% lower RDS(on) than prior OptiMOS generation (بمقابلہIPB076N20N6G)
- 200 V voltage class for solar and telecom markets (بمقابلہISC151N08NM6ATMA1)
- Industrial-standard D2PAK footprint (بمقابلہBSC050N04LSGATMA1)
ڈیزائن نوٹس
The D2PAK tab is the only significant heat path for the IPB068N20NM6ATMA1 - solder the tab to a copper pour of at least 1 square inch (645 mm^2) on the top or bottom layer of the PCB to keep junction-to-ambient thermal resistance below 40 C/W. At ID = 15.4 A continuous and RDS(on) = 68 milliohm the conduction loss alone is 16 W; without proper PCB copper the junction will exceed 150 C and trigger thermal shutdown. Estimated: using theta_JA = 40 C/W and ambient = 25 C, the junction rises to 25 + 16 * 40 = 665 C above zero before thermal shutdown, so the copper area must grow linearly with current.
Place a Kelvin-source connection on the source pin (pin 3) to bypass the parasitic source-inductance of the package lead. Without Kelvin connection the gate-drive loop sees an additional 5-10 nH of inductance that resonates with Cgs and produces ringing above 50 V on the gate during switching transients. Use a 10 ohm gate-source resistor to damp the ringing and a ferrite bead in series with the gate to suppress further EMI.
Do not parallel the IPB068N20NM6ATMA1 without per-device gate resistors. The OptiMOS 6 die has a very low transconductance transition region (VGS(th) 2.5-3.5 V), and parallel devices will oscillate at 100 MHz due to mismatched gate charge. Either use a single FET rated for the load, or add 10-ohm gate resistors and matched source resistors for each device. Also avoid exceeding 20 V VGS - the gate oxide is rated for +/-20 V absolute maximum.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon OptiMOS 6 family datasheet. Not AEC-Q100 qualified - for automotive designs select IPB068N20NM6ATMA1-Q1 equivalent or higher-grade automotive-qualified part.
