IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
MPN: IPB180P04P4L02ATMA2 ✓ فعالIPB180P04P4L02ATMA2 جائزہ
A P-Channel MOSFET is a voltage-controlled power transistor whose conduction channel is formed by negative charge carriers (holes) between source and drain. Compared with N-channel MOSFETs, P-channel parts simplify high-side switching by eliminating the charge pump or bootstrap circuit normally required to drive an N-channel high-side FET, which reduces BOM cost and PCB area. P-channel MOSFETs sit in the hierarchy: P-channel MOSFET -> MOSFET -> power transistor -> discrete semiconductor. The OptiMOS-P2 generation specifically targets the highest figure of merit for low-voltage (<=40 V) high-current switching applications.
Key specifications include a maximum drain-source voltage VDS of 40 V, continuous drain current ID of 180 A at Tc, pulsed avalanche current handling that supports motor-drive transients, and an extremely low typical on-state resistance RDS(on) of 2.4 mOhm at VGS = 10 V (according to Infineon's product summary page). The P-channel polarity and -10 V gate drive are standard for high-side load switching. PG-TO263-7-3 (D2PAK-6) is a 7-pin surface-mount package with a large metal tab that doubles as the drain connection and provides a low-thermal-resistance path to the PCB.
The OptiMOS-P2 trench technology uses an advanced cell pitch and a P-epi drain structure to minimize the RDS(on) x Qg figure of merit. The die is optimized for high peak current handling and low conduction loss, and is screened to Infineon's automotive-grade reliability flow. The -02 suffix denotes a specific VGS(th) and RDS(on) bin within the OptiMOS-P2 family.
Typical applications include high-side load switches in 12 V / 24 V automotive board nets, motor-bridge switches for small DC motors and pumps, reverse-battery protection FETs, and power-ORing switches in redundant supply architectures. The P-channel topology makes it particularly attractive as a high-side switch that is driven directly from a logic-level MCU without needing a level-shifter.
When designing with this part, note that the source pin sits at the load (system voltage) side, so the tab/drain is the low-side (ground) terminal. Gate drive must reach at least 10 V below the source for full enhancement. For thermal management at 150 W PDC, copper-pour area under the tab should be sized to keep Tj below 175 C at worst-case continuous load.
This page synthesizes distributor pricing, AEC-Q101 alternatives, and design considerations not consolidated in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IPB180P04P4L02ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB180P04P4L02ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Drain-Source Voltage (VDS), Operating Temperature Range, Pin Count, RoHS Status.
IPB180P04P4L-02
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB180P04P4L02ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-P2 |
| ٹرانزسٹر کی قسم | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 180 A |
| Power Dissipation (PD) at Tc | 150 W |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C (junction) |
| پیکیج | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 7 (6 + tab) |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant (per Infineon product page) |
| Tab Connection | Drain |
IPB180P04P4L02ATMA2 پن کنفیگریشن
| پن 1 | Gate — Gate control input (drive to GND to turn ON) |
| پن 2 | Source — Source terminal (connect to load/system voltage) |
| پن 3 | Source — Source terminal (parallel pin 2) |
| پن 4 | Source — Source terminal (parallel pin 2) |
| پن 5 | Source — Source terminal (parallel pin 2) |
| پن 6 | Source — Source terminal (parallel pin 2) |
| پن 7 | Tab (Drain) — Drain terminal and thermal tab (PCB heatsink) |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
IPB180P04P4L02ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Automotive High-Side Load Switch, 24V Truck/Powertrain Motor Bridge Switch, Reverse-Battery / Load-Dump Protection, Server ORing / Hot-Swap Power Switch, Industrial 24V Solenoid/Valve Driver, USB PD / High-Current Charging Switch.
12V Automotive High-Side Load Switch
The IPB180P04P4L02ATMA2 is ideal as a high-side load switch in 12 V automotive board nets because its P-channel polarity eliminates the need for a charge-pump or bootstrap circuit to drive a high-side N-channel FET. The 40 V VDS rating provides comfortable transient headroom above the 12 V nominal (which can spike to 35 V during load-dump per ISO 7637-2), and the 2.4 mOhm RDS(on) keeps conduction loss minimal even at 100+ A continuous loads driving halogen lamps or PTC heaters.
تجویز کردہ
24V Truck/Powertrain Motor Bridge Switch
In 24 V truck and off-highway powertrain systems, the IPB180P04P4L02ATMA2 serves as the high-side switch in an H-bridge driving small DC motors for pumps, fans, and actuators. The 180 A continuous and pulsed current capability handles motor inrush transients, while the AEC-Q101 qualification ensures operation across -40 C to +125 C ambient. Compared to mechanical relays, this MOSFET provides PWM speed control with no audible contact wear and far higher reliability.
تجویز کردہ
Reverse-Battery / Load-Dump Protection
Placed in series with the battery feed, the IPB180P04P4L02ATMA2 acts as a reverse-battery and load-dump protection FET, blocking negative transients and clamping positive load-dump spikes to safe levels. The P-channel topology keeps the body diode reverse-biased during normal operation, so the FET conducts only when the gate is pulled low (system ON). Its 40 V VDS and 150 W PDC rating comfortably absorb the energy in ISO 7637-2 load-dump pulses when properly heatsunk.
تجویز کردہ
Server ORing / Hot-Swap Power Switch
In redundant 12 V server power distribution, the IPB180P04P4L02ATMA2 is used as a high-side ORing FET that isolates a failed supply rail from the live bus. The 2.4 mOhm RDS(on) minimizes voltage drop and dissipation, while the 40 V rating covers transients on a 12 V rail. P-channel drive simplicity (gate pulled to GND to turn ON) lets a controller IC manage fast turn-off during reverse-current detection, protecting downstream components.
تجویز کردہ
Industrial 24V Solenoid/Valve Driver
For industrial 24 V solenoid and hydraulic valve control, the IPB180P04P4L02ATMA2 provides a PWM-controllable high-side switch with on-resistance low enough to drive 24 V solenoids at the maximum rated current without external heatsinking in many cases. The D2PAK-7 tab can be screwed directly to a chassis heatsink for high-duty-cycle applications. The -55 C to +175 C junction range supports harsh factory-floor environments.
تجویز کردہ
USB PD / High-Current Charging Switch
The IPB180P04P4L02ATMA2 can be used as the high-current load switch in USB-Power-Delivery and proprietary fast-charging adapters, where its low RDS(on) keeps voltage drop across the cable-management FET below 50 mV even at 5 A continuous. The P-channel topology supports low-side current sensing, and the D2PAK-7 footprint handles the elevated power dissipation at 20 V input, 5 A output (P = I^2 x R = 25 x 0.0024 = 0.06 W).
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB180P04P4L02ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB180P04P4L-02 | IPD50P04P4L11ATMA2 | IRFR4905TRPBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-7-3 (D2PAK-7) | PG-TO263-7-3 (D2PAK-7) - same | PG-TO252-3 (DPAK-3) - different | TO-252 (DPAK) - different |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | 40 V | 40 V | 40 V | 55 V |
| Continuous Drain Current | 180 A | 180 A | 50 A | 74 A |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial (not AEC-Q101) |
اہم امتیازی خصوصیات
- Highest current in OptiMOS-P2 P-channel family (بمقابلہIPD50P04P4L11ATMA2)
- Lower RDS(on) than legacy IR P-channel parts (بمقابلہIRFR4905TRPBF)
- AEC-Q101 automotive qualification (بمقابلہIRFR4905TRPBF)
ڈیزائن نوٹس
Estimated: at VDS = 0.4 V conduction drop with ID = 100 A continuous, conduction loss is approximately 40 W (P = ID x VDS). With D2PAK-7 theta_JC of approximately 0.5 C/W, junction temperature rise above case is ~20 C, but PCB copper-pour theta_JA can drive overall junction rise to 40-60 C above ambient. Provide at least 1 square inch of 2 oz copper under the tab, or use a screw-attached heatsink for >75 W continuous dissipation. Junction must remain below 175 C at worst case.
Layout for D2PAK-7: place the gate pull-down resistor (typically 10-100 kOhm) close to the gate pin to prevent accidental turn-on from Miller-induced dv/dt. The source pins (2-6) are all internally bonded and serve as the load-current return path; use a wide copper pour connecting them. The tab must be soldered to a copper pour of sufficient area to keep thermal resistance low. Per Infineon's OptiMOS-P2 application note, source-sense kelvin connection is not provided - use source pin closest to gate for gate-drive return.
Critical pitfalls: (1) Do not exceed VGS = +/-20 V absolute max - use a Zener clamp on the gate for inductive-load applications. (2) The body diode is forward-biased from drain-to-source (D2PAK-7 convention for P-channel) and has limited reverse-recovery rating - avoid relying on it for high-frequency switching. (3) High-side P-channel requires the gate driver to swing below the source pin (system voltage), which is 12 V or 24 V below ground - use a gate-drive supply referenced to source, not GND. (4) Verify AEC-Q101 PPAP documentation is current with your build date for safety-critical automotive designs.
تعمیل کی معلومات
AEC-Q101 (automotive-grade) qualified per Arrow distributor listing and Infineon product page. RoHS compliant. Halogen-free status not explicitly stated in the verified web data; consult Infineon product declaration for confirmation.
