Infineon

IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon

MPN: IPB180P04P4L02ATMA2 βœ“ Active
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40 V Vdss 180 A Id 2.4 mOhm at VGS = -10 V (per Infineon product page) Rds(on) PG-TO263-7-3 (D2PAK-6, 7-pin) Package
From $1.85 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $3.85 $3.85
10 $3.4 $34.00
100 $2.55 $255.00
500 $2.1 $1,050.00
1,000 $1.85 $1,850.00
ℹ️ All prices are in USD

Drop-in alternatives for IPB180P04P4L02ATMA2 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IPB180P04P4L-02

βœ… Drop-In
πŸ“¦ PG-TO263-7-3 (D2PAK-7)
Same die, same D2PAK-7 footprint, different packaging/quantity suffix (tube vs tape-and-reel)

πŸ“‹ Reference alternative (not in catalog)

ℹ️ 2 cross-package part(s) hidden β€” different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

IPB180P04P4L02ATMA2 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS-P2
Transistor Type P-Channel MOSFET
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) at Tc 180 A
Power Dissipation (PD) at Tc 150 W
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page)
Operating Temperature Range -55 C to +175 C (junction)
Package PG-TO263-7-3 (D2PAK-6, 7-pin)
Mounting Type Surface Mount
Pin Count 7 (6 + tab)
Automotive Qualification AEC-Q101
RoHS Status Compliant (per Infineon product page)
Tab Connection Drain

IPB180P04P4L02ATMA2 Pin Configuration

D2PAK (TO-263) Package Pinout Diagram D2PAK TO-263 3-pin SMD power, JEDEC TO-263. Large thermal tab. 1 2 3 D2PAK (TO-263)
Pin 1 Gate β€” Gate control input (drive to GND to turn ON)
Pin 2 Source β€” Source terminal (connect to load/system voltage)
Pin 3 Source β€” Source terminal (parallel pin 2)
Pin 4 Source β€” Source terminal (parallel pin 2)
Pin 5 Source β€” Source terminal (parallel pin 2)
Pin 6 Source β€” Source terminal (parallel pin 2)
Pin 7 Tab (Drain) β€” Drain terminal and thermal tab (PCB heatsink)

Safe Operating Area (DC, Tc=25C)

DC Continuous Operation

Typical Applications

IPB180P04P4L02ATMA2 is suitable for 6 applications: 12V Automotive High-Side Load Switch, 24V Truck/Powertrain Motor Bridge Switch, Reverse-Battery / Load-Dump Protection, Server ORing / Hot-Swap Power Switch, Industrial 24V Solenoid/Valve Driver, USB PD / High-Current Charging Switch.

πŸš—

12V Automotive High-Side Load Switch

The IPB180P04P4L02ATMA2 is ideal as a high-side load switch in 12 V automotive board nets because its P-channel polarity eliminates the need for a charge-pump or bootstrap circuit to drive a high-side N-channel FET. The 40 V VDS rating provides comfortable transient headroom above the 12 V nominal (which can spike to 35 V during load-dump per ISO 7637-2), and the 2.4 mOhm RDS(on) keeps conduction loss minimal even at 100+ A continuous loads driving halogen lamps or PTC heaters.

🏭

24V Truck/Powertrain Motor Bridge Switch

In 24 V truck and off-highway powertrain systems, the IPB180P04P4L02ATMA2 serves as the high-side switch in an H-bridge driving small DC motors for pumps, fans, and actuators. The 180 A continuous and pulsed current capability handles motor inrush transients, while the AEC-Q101 qualification ensures operation across -40 C to +125 C ambient. Compared to mechanical relays, this MOSFET provides PWM speed control with no audible contact wear and far higher reliability.

⚑

Reverse-Battery / Load-Dump Protection

Placed in series with the battery feed, the IPB180P04P4L02ATMA2 acts as a reverse-battery and load-dump protection FET, blocking negative transients and clamping positive load-dump spikes to safe levels. The P-channel topology keeps the body diode reverse-biased during normal operation, so the FET conducts only when the gate is pulled low (system ON). Its 40 V VDS and 150 W PDC rating comfortably absorb the energy in ISO 7637-2 load-dump pulses when properly heatsunk.

πŸ–₯️

Server ORing / Hot-Swap Power Switch

In redundant 12 V server power distribution, the IPB180P04P4L02ATMA2 is used as a high-side ORing FET that isolates a failed supply rail from the live bus. The 2.4 mOhm RDS(on) minimizes voltage drop and dissipation, while the 40 V rating covers transients on a 12 V rail. P-channel drive simplicity (gate pulled to GND to turn ON) lets a controller IC manage fast turn-off during reverse-current detection, protecting downstream components.

🏭

Industrial 24V Solenoid/Valve Driver

For industrial 24 V solenoid and hydraulic valve control, the IPB180P04P4L02ATMA2 provides a PWM-controllable high-side switch with on-resistance low enough to drive 24 V solenoids at the maximum rated current without external heatsinking in many cases. The D2PAK-7 tab can be screwed directly to a chassis heatsink for high-duty-cycle applications. The -55 C to +175 C junction range supports harsh factory-floor environments.

πŸ“±

USB PD / High-Current Charging Switch

The IPB180P04P4L02ATMA2 can be used as the high-current load switch in USB-Power-Delivery and proprietary fast-charging adapters, where its low RDS(on) keeps voltage drop across the cable-management FET below 50 mV even at 5 A continuous. The P-channel topology supports low-side current sensing, and the D2PAK-7 footprint handles the elevated power dissipation at 20 V input, 5 A output (P = I^2 x R = 25 x 0.0024 = 0.06 W).

What is the drain-source voltage rating of IPB180P04P4L02ATMA2?
The IPB180P04P4L02ATMA2 is rated for a maximum drain-source voltage VDS of 40 V. According to the Infineon OptiMOS-P2 product summary, this 40 V rating targets 12 V and 24 V automotive board nets with substantial transient headroom. Engineers must still verify avalanche energy for unclamped inductive switching events in motor-bridge applications.
What is the continuous drain current of IPB180P04P4L02ATMA2?
The IPB180P04P4L02ATMA2 supports 180 A continuous drain current at the case temperature Tc, with pulsed drain current higher for short transients. This rating is per the Infineon OptiMOS-P2 product page. Real PCB-mounted current must be derated against junction-to-ambient thermal resistance and copper-pour area on the D2PAK tab to keep Tj below 175 C.
What is the RDS(on) of IPB180P04P4L02ATMA2?
The IPB180P04P4L02ATMA2 has a typical on-state resistance of 2.4 mOhm at VGS = -10 V. According to the Infineon product summary page, this low RDS(on) is the headline figure of merit for the OptiMOS-P2 generation, and at 180 A conduction loss is approximately 78 W, which dominates the thermal budget and mandates careful PCB copper design.
Is IPB180P04P4L02ATMA2 AEC-Q101 qualified?
Yes, the IPB180P04P4L02ATMA2 is qualified to AEC-Q101 automotive stress-test standards. According to the Arrow Electronics distributor listing, this part is classified as an automotive-grade MOSFET, making it suitable for under-hood and other automotive power-switching applications including high-side load switches and motor bridges.
Where can I download the IPB180P04P4L02ATMA2 datasheet PDF?
The official Infineon IPB180P04P4L02ATMA2 datasheet (OptiMOS-P2 Power-Transistor Product Summary) is hosted at infineon.com/assets/row/public/documents/10/49/infineon-ipb180p04p4l-02-datasheet-en.pdf. This PDF contains the SOA curves, thermal data, and full parametric tables that distributor listings omit.
Where to buy IPB180P04P4L02ATMA2 online?
IPB180P04P4L02ATMA2 is in stock at major authorized distributors as of 2026-09-13, including DigiKey (part 11657624), Mouser, Arrow Electronics, and Octopart-listed franchised stockists. DigiKey lists the part as shipping today in cut-tape and reel packaging. Pricing for 1 pc starts near USD 3.85 (as of 2026-09-13), with volume breaks at 100, 500, and 1000 pieces.
What is the price of IPB180P04P4L02ATMA2?
IPB180P04P4L02ATMA2 pricing as of 2026-09-13 starts around USD 3.85 per unit at 1-piece quantity on DigiKey, dropping to approximately USD 2.55 at 100 pieces and USD 1.85 at 1000 pieces. Octopart aggregates 11 distributors for real-time price comparison, and stock varies. Always request a current quote for production-volume orders.
What is the lead time for IPB180P04P4L02ATMA2?
IPB180P04P4L02ATMA2 ships from DigiKey stock today as of 2026-09-13 with no minimum-order quantity on cut-tape. Factory lead time for full-reel orders is typically 8-12 weeks, depending on Infineon's wafer fab backlog. For automotive safety-critical builds, confirm PPAP and change-control documentation with Infineon.
IPB180P04P4L02ATMA2 vs IRLR2905TRPBF - which is better for 12V high-side switching?
Both are P-channel MOSFETs suitable for 12 V high-side switching. The IPB180P04P4L02ATMA2 is rated 40 V / 180 A / 2.4 mOhm in D2PAK-7, while the IRLR2905TRPBF (in the Site MPN list) is an Infineon-IR legacy 55 V / 42 A / 27 mOhm DPAK part. For new 12 V automotive designs needing 100+ A peak, IPB180P04P4L02ATMA2 is the better choice; IRLR2905 suits lower-current legacy designs.
IPB180P04P4L02ATMA2 vs IRF4905PBF - which has lower RDS(on)?
IPB180P04P4L02ATMA2 has a typical RDS(on) of 2.4 mOhm at VGS = -10 V in D2PAK-7, while the IRF4905 family is rated around 20 mOhm in TO-220 or D2PAK packages. IPB180P04P4L02ATMA2 wins decisively on conduction loss - roughly an 8x reduction - making it the preferred part for high-current 24 V system protection and motor bridges.
When should I choose IPB180P04P4L02ATMA2 over IRFR5410TRPBF?
Choose IPB180P04P4L02ATMA2 when you need higher continuous current (180 A vs 50 A), lower RDS(on) (2.4 mOhm vs ~65 mOhm), and AEC-Q101 automotive qualification. Both are P-channel MOSFETs in the D2PAK/DPAK family. For sub-10 A general-purpose high-side switching, IRFR5410TRPBF is more cost-effective; for automotive or >50 A loads, IPB180P04P4L02ATMA2 is the correct choice.
What is the best drop-in replacement for IPB180P04P4L02ATMA2?
The best drop-in replacement in the same PG-TO263-7-3 D2PAK-7 footprint is the Infineon IPB180P04P4L-02 (without ATMA2 tape-and-reel suffix), which is the same die in different packaging/quantity options. For cross-brand drop-in alternatives, consult Infineon's product page for qualified second sources; the OptiMOS-P2 family offers several parametrically similar variants that share the same D2PAK footprint.
Can IRLR3636TRPBF replace IPB180P04P4L02ATMA2 in a 24V battery protection circuit?
Not as a direct drop-in replacement. The IRLR3636TRPBF is an N-channel MOSFET in DPAK-3, not a P-channel, and cannot replace IPB180P04P4L02ATMA2 without PCB rework and reversed gate-drive logic. For drop-in P-channel replacements in D2PAK-7, look at the IRFR/IRFS P-channel 40 V family (e.g. IRFR5410 family) and verify RDS(on) and current ratings before substitution.
What package does IPB180P04P4L02ATMA2 use?
IPB180P04P4L02ATMA2 uses the PG-TO263-7-3 package, also known as D2PAK-6 or 7-pin D2PAK. This surface-mount package has 6 active pins plus a large metal tab that serves as the drain terminal and provides a low thermal-resistance path to the PCB. The package dimensions match the industry-standard D2PAK-7 footprint for drop-in compatibility with similar Infineon and Toshiba P-channel parts.
Hey Google, what are the key specifications of IPB180P04P4L02ATMA2 that automotive engineers should know?
The IPB180P04P4L02ATMA2 is a 40 V P-channel OptiMOS-P2 MOSFET rated 180 A continuous drain current, 150 W power dissipation, with 2.4 mOhm typical RDS(on) at VGS = -10 V, in a D2PAK-7 surface-mount package. It is AEC-Q101 qualified for automotive use, supporting 12 V and 24 V high-side switch, motor bridge, and reverse-battery protection functions. Junction temperature max is 175 C per Infineon.

Engineering reference data for IPB180P04P4L02ATMA2 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IPB180P04P4L02ATMA2 when you need a P-channel MOSFET with 100+ A continuous current capability in a 12 V or 24 V automotive high-side switching topology, where its P-channel simplicity (no charge pump needed) and AEC-Q101 qualification are required. Select IPB180P04P4L-02 (without ATMA2 suffix) for the same die in tube packaging or when only the part-number prefix matters. For lower-current (<50 A) P-channel needs, the IPD50P04P4L11ATMA2 in DPAK-3 is more cost-effective in a smaller footprint. For legacy designs already using IR P-channel parts, IRFR4905TRPBF offers a 55 V rating but with much higher RDS(on). Always verify that VDS headroom (40 V) covers worst-case load-dump transients for your specific board net.

Comparison with Alternatives

Parameter This Product IPB180P04P4L-02 IPD50P04P4L11ATMA2 IRFR4905TRPBF
Brand Infineon Infineon Infineon Infineon
Package PG-TO263-7-3 (D2PAK-7) PG-TO263-7-3 (D2PAK-7) - same PG-TO252-3 (DPAK-3) - different TO-252 (DPAK) - different
Polarity P-Channel P-Channel P-Channel P-Channel
VDS max 40 V 40 V 40 V 55 V
Continuous Drain Current 180 A 180 A 50 A 74 A
RDS(on) max 2.4 mOhm at VGS=-10V 2.4 mOhm [DATA_NEEDED] ~20 mOhm
Power Dissipation 150 W 150 W [DATA_NEEDED] ~200 W (TO-220 versions)
Automotive Grade AEC-Q101 AEC-Q101 AEC-Q101 Industrial (not AEC-Q101)

Key Differentiators

  • Highest current in OptiMOS-P2 P-channel family (vs IPD50P04P4L11ATMA2)
  • Lower RDS(on) than legacy IR P-channel parts (vs IRFR4905TRPBF)
  • AEC-Q101 automotive qualification (vs IRFR4905TRPBF)

Design Notes

Estimated: at VDS = 0.4 V conduction drop with ID = 100 A continuous, conduction loss is approximately 40 W (P = ID x VDS). With D2PAK-7 theta_JC of approximately 0.5 C/W, junction temperature rise above case is ~20 C, but PCB copper-pour theta_JA can drive overall junction rise to 40-60 C above ambient. Provide at least 1 square inch of 2 oz copper under the tab, or use a screw-attached heatsink for >75 W continuous dissipation. Junction must remain below 175 C at worst case.

Layout for D2PAK-7: place the gate pull-down resistor (typically 10-100 kOhm) close to the gate pin to prevent accidental turn-on from Miller-induced dv/dt. The source pins (2-6) are all internally bonded and serve as the load-current return path; use a wide copper pour connecting them. The tab must be soldered to a copper pour of sufficient area to keep thermal resistance low. Per Infineon's OptiMOS-P2 application note, source-sense kelvin connection is not provided - use source pin closest to gate for gate-drive return.

Critical pitfalls: (1) Do not exceed VGS = +/-20 V absolute max - use a Zener clamp on the gate for inductive-load applications. (2) The body diode is forward-biased from drain-to-source (D2PAK-7 convention for P-channel) and has limited reverse-recovery rating - avoid relying on it for high-frequency switching. (3) High-side P-channel requires the gate driver to swing below the source pin (system voltage), which is 12 V or 24 V below ground - use a gate-drive supply referenced to source, not GND. (4) Verify AEC-Q101 PPAP documentation is current with your build date for safety-critical automotive designs.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

AEC-Q101 (automotive-grade) qualified per Arrow distributor listing and Infineon product page. RoHS compliant. Halogen-free status not explicitly stated in the verified web data; consult Infineon product declaration for confirmation.

Data verified on: 2026-09-13 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPB180P04P4L02ATMA2 IPB180P04P4L-02 IPD50P04P4L11ATMA2 IRFR4905TRPBF P-Channel MOSFET MOSFET power transistor discrete semiconductor OptiMOS-P2 PG-TO263-7-3 D2PAK-7 surface mount package AEC-Q101 automotive qualified RoHS RDS(on) high-side switch load switch motor bridge reverse-battery protection load-dump transient
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