IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon
MPN: IPB90N06S4L04ATMA2 ✓ فعالIPB90N06S4L04ATMA2 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. The N-channel variant is the most common polarity and requires a positive gate drive. MOSFETs sit in the discrete semiconductor hierarchy alongside IGBTs and BJTs, and within power-electronics families they are subdivided into trench MOSFETs, planar MOSFETs, and HEMTs. The IPB90N06S4L04ATMA2 is a trench MOSFET, leveraging deep-trench cell geometry to minimise on-state resistance per unit silicon area.
Key features include 3.4 mΩ R_DS(on) (typ) at VGS=10 V, 60 V V_DSS, 90 A I_D continuous, 150 W P_D, AEC-Q101 automotive qualification, 100% avalanche-tested, MSL1 moisture sensitivity rating up to 260 °C peak reflow, and 175 °C maximum operating temperature. The device is also Green Product (RoHS compliant) and Halogen-Free, meeting modern automotive environmental requirements.
The trench-cell architecture enables industry-leading figure-of-merit (FOM = R_DS(on) × Q_g), reducing both switching and conduction losses. The result is higher system efficiency, lower thermal rise, and the ability to shrink heatsinks in space-constrained automotive ECUs, DC-DC converters, and motor-drive stages.
Typical applications include automotive 12 V and 24 V high-current switching, electric power steering (EPS), braking systems, transmission control, body electronics, DC-DC converter stages, and motor drives. The low R_DS(on) and AEC-Q101 qualification make it especially well suited for direct-to-battery automotive loads where cold-crank and load-dump transients must be tolerated.
Design tip: keep the gate-drive loop (gate resistor + driver) compact to suppress ringing, and add a TVS across the gate-source if the gate is exposed to fault transients. Always derate to ≤80% of the absolute-maximum ratings for production designs.
This page synthesises distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical thermal design notes not found in the bare manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IPB90N06S4L04ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB90N06S4L04ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Mounting Type, Operating Temperature Range, Avalanche Tested.
IPB90N06S4L-04
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB120N10S4-05ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB120N10S405ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF2907ZSTRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTP5860NL
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF5210PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB90N06S4L04ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | IPB90N06S4L04ATMA2 |
| Technology | OptiMOS T2, N-channel enhancement mode |
| Drain-Source Voltage (V_DSS) | 60 V |
| Continuous Drain Current (I_D, Tc) | 90 A |
| Pulsed Drain Current (I_D,pulse) | 360 A |
| Power Dissipation (P_D, Tc) | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ |
| Gate-Source Voltage (V_GS) | ±20 V |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +175 °C |
| پیکیج | PG-TO263-3-2 (D2PAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | MSL1 (unlimited floor life) |
| Peak Reflow Temperature | 260 °C |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Tested | 100% avalanche-tested |
| RoHS / Halogen-Free | Yes (Green Product) |
IPB90N06S4L04ATMA2 پن کنفیگریشن
| پن 1 | Gate — MOSFET gate input; drive with 0-10V logic-level PWM signal |
| پن 2 | Drain — MOSFET drain; internally connected to metal tab |
| پن 3 | Source — MOSFET source; connect to system ground reference |
| پن Tab | Drain — Metal tab; internally tied to Drain (pin 2); provides thermal dissipation path to PCB copper pour |
محفوظ آپریٹنگ ایریا (DC), PG-TO263-3-2, Tj≤175°C
عام استعمالات
IPB90N06S4L04ATMA2 کے لیے موزوں ہے 7 ایپلیکیشنs: Automotive 12V/24V High-Current Switching, Electric Power Steering (EPS) Motor Drive, Braking System ABS/ESC Solenoid Control, Automotive DC-DC Converter (Buck/Boost), Body Electronics - Window Lift / Seat Control, Industrial Motor Drive / Robotics, Battery Protection / Battery Management.
Automotive 12V/24V High-Current Switching
The IPB90N06S4L04ATMA2 is purpose-built for 12V and 24V automotive load switching, where its 3.4 mΩ R_DS(on) minimises I²R conduction losses and its AEC-Q101 qualification guarantees reliability under -40 °C to +175 °C automotive stress. The 90 A continuous drain current handles high-current loads such as headlamp drivers, fan controllers, and PTC heaters, while the 60 V V_DSS rating tolerates load-dump transients up to ~35 V. Placed between the battery and the load with a 10 Ω gate resistor for ringing suppression, the device outperforms planar MOSFETs by ~30% in conduction loss, enabling smaller PCB copper pours and eliminating external heatsinks.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
In EPS systems, the IPB90N06S4L04ATMA2 serves as the low-side switching element in a 3-phase H-bridge driving the steering-assist motor. Its 3.4 mΩ R_DS(on) keeps conduction losses below 5 W at 40 A typical EPS current, while AEC-Q101 qualification ensures reliability under hood temperatures up to 125 °C. The 90 A rating provides 2× headroom for peak torque events during parking manoeuvres. Paired with a gate driver such as the IRS2334MTRPBF in a TO-220-free surface-mount D2PAK footprint, the design achieves compact PCB integration essential for column-mounted EPS units.
تجویز کردہ
Braking System ABS/ESC Solenoid Control
Anti-lock Braking System (ABS) and Electronic Stability Control (ESC) hydraulic solenoid valves demand MOSFETs with low R_DS(on) for fast actuation and AEC-Q101 reliability for safety-critical operation. The IPB90N06S4L04ATMA2's 3.4 mΩ R_DS(on) delivers sub-millisecond valve response, while its 60 V V_DSS tolerates inductive flyback from the solenoid coils when properly clamped. The 90 A rating exceeds the ~10 A peak solenoid current by 9×, providing substantial derating margin required by ISO 26262 functional-safety analyses. The D2PAK package allows direct PCB heatsinking without external hardware.
تجویز کردہ
Automotive DC-DC Converter (Buck/Boost)
For 12V-to-5V/3.3V buck converters or 12V-to-24V boost converters in automotive ECUs, the IPB90N06S4L04ATMA2's 3.4 mΩ R_DS(on) and 90 A continuous current enable >95% efficiency at 200-500 W output power. The low gate charge of Infineon's OptiMOS T2 process minimises switching losses at 100-500 kHz typical automotive switching frequencies. AEC-Q101 qualification and 175 °C operating junction temperature provide ample thermal margin under-hood. Compared to a 100V part, the 60V V_DSS rating offers the best FOM in its class, with sufficient margin for 24V bus transients.
تجویز کردہ
Body Electronics - Window Lift / Seat Control
Body-control modules for window lifts, seat adjusters, and sunroof drives require bidirectional H-bridge motor control. The IPB90N06S4L04ATMA2 serves as one half of the H-bridge, with its 90 A rating handling motor stall currents up to 40 A typical and 3.4 mΩ R_DS(on) keeping conduction losses below 5 W per switch. AEC-Q101 qualification and MSL1 moisture rating support high-volume SMT assembly without special handling. The D2PAK footprint allows compact PCB layout that fits within the door-module housing envelope.
تجویز کردہ
Industrial Motor Drive / Robotics
Beyond automotive, the IPB90N06S4L04ATMA2 is suitable for industrial servo drives, robotic actuators, and CNC spindle drives operating on 24-48 V DC buses. Its 60 V V_DSS rating handles 48 V nominal with substantial transient headroom, and the 90 A continuous current suits mid-power brushless-DC motor windings up to ~3 kW. The 3.4 mΩ R_DS(on) keeps inverter losses below 1% at rated load, while the D2PAK package enables compact 3-phase inverter designs. While AEC-Q101 is automotive-grade, it exceeds industrial reliability requirements.
تجویز کردہ
Battery Protection / Battery Management
In lithium-ion battery packs and battery-management systems (BMS), the IPB90N06S4L04ATMA2 functions as the discharge MOSFET in a protection circuit, interrupting current flow during over-current, over-voltage, or short-circuit events. Its 3.4 mΩ R_DS(on) reduces steady-state losses to ~340 mW at 10 A continuous, while the 90 A rating handles brief surge events. The 60 V V_DSS rating suits 12-48 V battery packs. Pair with an SMBJ5.0A TVS for transient clamping, and an ITS4090QEPDXUMA1 high-side driver for logic-level control compatibility.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB90N06S4L04ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB90N06S4L-04 | IPB120N10S4-05ATMA1 | IRF2907ZSTRLPBF | NTP5860NL |
|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Brand | Infineon | Infineon - same brand | Infineon - same brand | Infineon - same brand | onsemi - cross-brand |
| V_DSS (V) | 60 | 60 - same | 100 (+67%) | 75 (+25%) | 60 - same |
| Continuous I_D (A) | 90 | 90 - same | 120 (+33%) | 75 (-17%) | 90 - same |
| R_DS(on) @ V_GS=10V (mΩ) | 3.4 | 3.4 - same | 5.0 (+47%) | 4.5 (+32%) | 3.6 (+6%) |
| P_D (W) | 150 | 150 - same | 200 (+33%) | 200 (+33%) | 150 - same |
| AEC-Q101 Qualified | Yes | Yes | Yes | No (industrial grade) | Yes |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel |
اہم امتیازی خصوصیات
- World's lowest R_DS(on) in 60V class (بمقابلہNTP5860NL (onsemi))
- AEC-Q101 automotive qualification with 175°C max Tj (بمقابلہIRF2907ZSTRLPBF (Infineon))
- Highest current capability in D2PAK at 60V (بمقابلہIPB120N10S4-05ATMA1 (Infineon, 100V class))
ڈیزائن نوٹس
Estimated thermal analysis: At I_D=40 A and V_DS=12 V in switching-mode operation, conduction losses approximate P = I² × R_DS(on) = 40² × 0.0034 = 5.44 W. The PG-TO263-3-2 package has typical θJA ≈ 40 °C/W on a 1 oz 4-layer 1 sq-inch copper pour; junction rise ≈ 218 °C above 25 °C ambient. Derate to ~30 A continuous for junction temperature ≤150 °C at 85 °C ambient, or increase copper area to ~2 sq-inch to reduce θJA toward 25 °C/W.
Solder the metal tab to a copper pour of at least 1 square inch on the top layer, plus thermal vias to inner layers for double-sided cooling. Use 6×0.3 mm thermal vias under the tab in a 3×3 grid. The tab is internally tied to Pin 2 (Drain), so the pour must not contact low-side traces or ground - maintain ≥0.5 mm clearance from source traces to prevent short circuits during soldering.
Keep the gate-drive loop (gate resistor + driver output + device gate + device source) physically small, ideally <1 cm² total area, to minimise parasitic inductance that causes gate ringing and potential dv/dt-induced turn-on. Place a 10-100 Ω gate resistor in series to dampen oscillations. Add a 10 kΩ gate-source pull-down resistor to ensure the MOSFET stays off when the gate driver is in high-impedance state during power-up.
Do not exceed V_GS = ±20 V absolute maximum - even brief transients from a floating gate can destroy the thin gate oxide. Always include a TVS diode such as SMBJ5.0A across gate-source if the gate is exposed to fault transients. Also note that R_DS(on) increases significantly at V_GS = 5 V versus 10 V - always drive with ≥10 V gate for full enhancement unless using logic-level variants.
تعمیل کی معلومات
AEC-Q101 automotive qualified (note: AEC-Q101 for discretes, equivalent to AEC-Q100 for ICs). 100% avalanche-tested per Infineon reliability protocol. MSL1 rated up to 260 °C peak reflow. Green Product / Halogen-Free per Infineon datasheet.
