IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon
MPN: IPB90N06S4L04ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.08 | $1,080.00 |
| 3,000 | $0.94 | $2,820.00 |
Drop-in alternatives for IPB90N06S4L04ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB90N06S4L-04
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120N10S4-05ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120N10S405ATMA1
✅ Drop-In✓ In Stock
$2.1 / Unit
View Datasheet →IRF2907ZSTRLPBF
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →NTP5860NL
✅ Drop-In📋 Reference alternative (not in catalog)
IRF5210PBF
✅ Drop-In✓ In Stock
$2.52 / Unit
View Datasheet →IPB90N06S4L04ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPB90N06S4L04ATMA2 |
| Technology | OptiMOS T2, N-channel enhancement mode |
| Drain-Source Voltage (V_DSS) | 60 V |
| Continuous Drain Current (I_D, Tc) | 90 A |
| Pulsed Drain Current (I_D,pulse) | 360 A |
| Power Dissipation (P_D, Tc) | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ |
| Gate-Source Voltage (V_GS) | ±20 V |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (unlimited floor life) |
| Peak Reflow Temperature | 260 °C |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Tested | 100% avalanche-tested |
| RoHS / Halogen-Free | Yes (Green Product) |
IPB90N06S4L04ATMA2 Pin Configuration
| Pin 1 | Gate — MOSFET gate input; drive with 0-10V logic-level PWM signal |
| Pin 2 | Drain — MOSFET drain; internally connected to metal tab |
| Pin 3 | Source — MOSFET source; connect to system ground reference |
| Pin Tab | Drain — Metal tab; internally tied to Drain (pin 2); provides thermal dissipation path to PCB copper pour |
Safe Operating Area (DC), PG-TO263-3-2, Tj≤175°C
Typical Applications
IPB90N06S4L04ATMA2 is suitable for 7 applications: Automotive 12V/24V High-Current Switching, Electric Power Steering (EPS) Motor Drive, Braking System ABS/ESC Solenoid Control, Automotive DC-DC Converter (Buck/Boost), Body Electronics - Window Lift / Seat Control, Industrial Motor Drive / Robotics, Battery Protection / Battery Management.
Automotive 12V/24V High-Current Switching
The IPB90N06S4L04ATMA2 is purpose-built for 12V and 24V automotive load switching, where its 3.4 mΩ R_DS(on) minimises I²R conduction losses and its AEC-Q101 qualification guarantees reliability under -40 °C to +175 °C automotive stress. The 90 A continuous drain current handles high-current loads such as headlamp drivers, fan controllers, and PTC heaters, while the 60 V V_DSS rating tolerates load-dump transients up to ~35 V. Placed between the battery and the load with a 10 Ω gate resistor for ringing suppression, the device outperforms planar MOSFETs by ~30% in conduction loss, enabling smaller PCB copper pours and eliminating external heatsinks.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS systems, the IPB90N06S4L04ATMA2 serves as the low-side switching element in a 3-phase H-bridge driving the steering-assist motor. Its 3.4 mΩ R_DS(on) keeps conduction losses below 5 W at 40 A typical EPS current, while AEC-Q101 qualification ensures reliability under hood temperatures up to 125 °C. The 90 A rating provides 2× headroom for peak torque events during parking manoeuvres. Paired with a gate driver such as the IRS2334MTRPBF in a TO-220-free surface-mount D2PAK footprint, the design achieves compact PCB integration essential for column-mounted EPS units.
Recommended
Braking System ABS/ESC Solenoid Control
Anti-lock Braking System (ABS) and Electronic Stability Control (ESC) hydraulic solenoid valves demand MOSFETs with low R_DS(on) for fast actuation and AEC-Q101 reliability for safety-critical operation. The IPB90N06S4L04ATMA2's 3.4 mΩ R_DS(on) delivers sub-millisecond valve response, while its 60 V V_DSS tolerates inductive flyback from the solenoid coils when properly clamped. The 90 A rating exceeds the ~10 A peak solenoid current by 9×, providing substantial derating margin required by ISO 26262 functional-safety analyses. The D2PAK package allows direct PCB heatsinking without external hardware.
Recommended
Automotive DC-DC Converter (Buck/Boost)
For 12V-to-5V/3.3V buck converters or 12V-to-24V boost converters in automotive ECUs, the IPB90N06S4L04ATMA2's 3.4 mΩ R_DS(on) and 90 A continuous current enable >95% efficiency at 200-500 W output power. The low gate charge of Infineon's OptiMOS T2 process minimises switching losses at 100-500 kHz typical automotive switching frequencies. AEC-Q101 qualification and 175 °C operating junction temperature provide ample thermal margin under-hood. Compared to a 100V part, the 60V V_DSS rating offers the best FOM in its class, with sufficient margin for 24V bus transients.
Recommended
Body Electronics - Window Lift / Seat Control
Body-control modules for window lifts, seat adjusters, and sunroof drives require bidirectional H-bridge motor control. The IPB90N06S4L04ATMA2 serves as one half of the H-bridge, with its 90 A rating handling motor stall currents up to 40 A typical and 3.4 mΩ R_DS(on) keeping conduction losses below 5 W per switch. AEC-Q101 qualification and MSL1 moisture rating support high-volume SMT assembly without special handling. The D2PAK footprint allows compact PCB layout that fits within the door-module housing envelope.
Recommended
Industrial Motor Drive / Robotics
Beyond automotive, the IPB90N06S4L04ATMA2 is suitable for industrial servo drives, robotic actuators, and CNC spindle drives operating on 24-48 V DC buses. Its 60 V V_DSS rating handles 48 V nominal with substantial transient headroom, and the 90 A continuous current suits mid-power brushless-DC motor windings up to ~3 kW. The 3.4 mΩ R_DS(on) keeps inverter losses below 1% at rated load, while the D2PAK package enables compact 3-phase inverter designs. While AEC-Q101 is automotive-grade, it exceeds industrial reliability requirements.
Recommended
Battery Protection / Battery Management
In lithium-ion battery packs and battery-management systems (BMS), the IPB90N06S4L04ATMA2 functions as the discharge MOSFET in a protection circuit, interrupting current flow during over-current, over-voltage, or short-circuit events. Its 3.4 mΩ R_DS(on) reduces steady-state losses to ~340 mW at 10 A continuous, while the 90 A rating handles brief surge events. The 60 V V_DSS rating suits 12-48 V battery packs. Pair with an SMBJ5.0A TVS for transient clamping, and an ITS4090QEPDXUMA1 high-side driver for logic-level control compatibility.
Recommended
Recommended Products Summary
Engineering reference data for IPB90N06S4L04ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB90N06S4L-04 | IPB120N10S4-05ATMA1 | IRF2907ZSTRLPBF | NTP5860NL |
|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Brand | Infineon | Infineon - same brand | Infineon - same brand | Infineon - same brand | onsemi - cross-brand |
| V_DSS (V) | 60 | 60 - same | 100 (+67%) | 75 (+25%) | 60 - same |
| Continuous I_D (A) | 90 | 90 - same | 120 (+33%) | 75 (-17%) | 90 - same |
| R_DS(on) @ V_GS=10V (mΩ) | 3.4 | 3.4 - same | 5.0 (+47%) | 4.5 (+32%) | 3.6 (+6%) |
| P_D (W) | 150 | 150 - same | 200 (+33%) | 200 (+33%) | 150 - same |
| AEC-Q101 Qualified | Yes | Yes | Yes | No (industrial grade) | Yes |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel |
Key Differentiators
- World's lowest R_DS(on) in 60V class (vs NTP5860NL (onsemi))
- AEC-Q101 automotive qualification with 175°C max Tj (vs IRF2907ZSTRLPBF (Infineon))
- Highest current capability in D2PAK at 60V (vs IPB120N10S4-05ATMA1 (Infineon, 100V class))
Design Notes
Estimated thermal analysis: At I_D=40 A and V_DS=12 V in switching-mode operation, conduction losses approximate P = I² × R_DS(on) = 40² × 0.0034 = 5.44 W. The PG-TO263-3-2 package has typical θJA ≈ 40 °C/W on a 1 oz 4-layer 1 sq-inch copper pour; junction rise ≈ 218 °C above 25 °C ambient. Derate to ~30 A continuous for junction temperature ≤150 °C at 85 °C ambient, or increase copper area to ~2 sq-inch to reduce θJA toward 25 °C/W.
Solder the metal tab to a copper pour of at least 1 square inch on the top layer, plus thermal vias to inner layers for double-sided cooling. Use 6×0.3 mm thermal vias under the tab in a 3×3 grid. The tab is internally tied to Pin 2 (Drain), so the pour must not contact low-side traces or ground - maintain ≥0.5 mm clearance from source traces to prevent short circuits during soldering.
Keep the gate-drive loop (gate resistor + driver output + device gate + device source) physically small, ideally <1 cm² total area, to minimise parasitic inductance that causes gate ringing and potential dv/dt-induced turn-on. Place a 10-100 Ω gate resistor in series to dampen oscillations. Add a 10 kΩ gate-source pull-down resistor to ensure the MOSFET stays off when the gate driver is in high-impedance state during power-up.
Do not exceed V_GS = ±20 V absolute maximum - even brief transients from a floating gate can destroy the thin gate oxide. Always include a TVS diode such as SMBJ5.0A across gate-source if the gate is exposed to fault transients. Also note that R_DS(on) increases significantly at V_GS = 5 V versus 10 V - always drive with ≥10 V gate for full enhancement unless using logic-level variants.
Compliance Information
AEC-Q101 automotive qualified (note: AEC-Q101 for discretes, equivalent to AEC-Q100 for ICs). 100% avalanche-tested per Infineon reliability protocol. MSL1 rated up to 260 °C peak reflow. Green Product / Halogen-Free per Infineon datasheet.
