IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPD031N03LGATMA1 ✓ فعالIPD031N03LGATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals and power. It belongs to the discrete-semiconductor family and serves as the fundamental building block of switched-mode power supplies (SMPS), DC-DC converters, and motor-control circuits. The OptiMOS 3 family from Infineon uses an advanced trench technology to minimize conduction and switching losses, occupying the middle tier of the MOSFET technology tree between planar MOSFETs and newer OptiMOS 5/6 generations.
Key differentiating specifications include a maximum on-state resistance of 3.1 mΩ at VGS = 10 V, ultra-low gate charge and output charge for reduced switching losses, and an avalanche-rated single-pulse current capability of 90 A. The device supports 4.5 V gate drive for compatibility with standard logic-level controllers and achieves full enhancement at 10 V for lowest RDS(on). Its PG-TO252-3-11 (DPAK) package provides a Kelvin-source connection through the tab, optimizing gate-drive loop inductance.
Architecturally, the IPD031N03LGATMA1 uses Infineon's third-generation OptiMOS trench-cell technology with a vertical DMOS structure, integrating a Schottky-like body diode and an avalanche-rugged single-pulse rating. The process node delivers industry-leading figure-of-merit (FOM = RDS(on) × Qg) for 30 V-class MOSFETs, making it highly competitive against Vishay Siliconix and onsemi equivalents in the same voltage class.
Typical applications include voltage regulator modules (VRMs) for server and datacom systems, point-of-load (POL) converters in telecom equipment, synchronous rectification in 12 V-output buck converters, battery-management load switches, and high-current DC motor control. Its ultra-low RDS(on) makes it particularly suitable for high-efficiency OR-ing and hot-swap circuits where conduction loss dominates.
When designing with this part, ensure the gate-drive voltage reaches at least 4.5 V for full enhancement and provide adequate PCB copper area under the DPAK tab for thermal dissipation. At 30 A continuous load, power dissipation reaches roughly 2.8 W, which requires at least 200 mm² of 2-oz copper pour to keep junction temperature rise below 50 °C.
This page synthesizes Infineon datasheet specifications, DigiKey and Mouser distributor pricing, drop-in alternative candidates sourced from cross-reference tools, and practical design notes not found in the manufacturer datasheet, providing engineers with a single-page decision reference.
کے لیے ڈراپ اِن متبادل IPD031N03LGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD031N03LGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, MSL Level, Drain-Source Voltage (VDS), Operating Temperature Range.
BSC014N04LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0501NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0911NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD78CN10NGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC034N06NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB90N06S4L04ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD031N03LGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) |
| Power Dissipation (Pd) | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | 3.1 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) |
| آپریٹنگ درجہ حرارت | -55 °C to +175 °C (junction) |
| پیکیج | PG-TO252-3-11 (DPAK-2) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Mounting Tab | Drain (electrically connected) |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
IPD031N03LGATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate control input; logic-level compatible (4.5 V Vgs for full enhancement) |
| پن 2 | Drain (Tab) — Drain terminal, electrically bonded to mounting tab for thermal dissipation |
| پن 3 | Source — Source terminal; return path for gate drive and load current |
محفوظ آپریٹنگ ایریا (SOA) - DC
عام استعمالات
IPD031N03LGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Server VRM Synchronous Rectification, Telecom Point-of-Load (POL) DC-DC Converter, Battery Management Load Switch, Hot-Swap / OR-ing Controller Switch, DC Motor Drive (H-Bridge Low-Side), Industrial 24V Bus Solid-State Relay (SSR).
Server VRM Synchronous Rectification
The IPD031N03LGATMA1 is a textbook low-side synchronous rectifier for 12 V-input buck VRMs in server and workstation motherboards. With RDS(on) of 3.1 mΩ at 10 V VGS and 90 A continuous drain current, the part dissipates only ~2.8 W at 30 A load, enabling >97% peak efficiency in multi-phase VR topologies. The OptiMOS 3 trench technology delivers low Qg/Qoss that minimizes dead-time body-diode conduction in 300-500 kHz switching designs. Engineers place this part on the low-side of each phase, paired with a dedicated gate driver and bootstrap circuit for the high-side switch.
تجویز کردہ
Telecom Point-of-Load (POL) DC-DC Converter
In 48 V-to-12 V or 12 V-to-1 V POL converters for telecom base stations, the IPD031N03LGATMA1 functions as the primary low-side switch in the synchronous-rectifier pair. Its 30 V Vdss rating suits 12 V bus rails with adequate transient margin, while the 3.1 mΩ RDS(on) keeps conduction losses below 1% at 25 A. The DPAK-2 (PG-TO252-3-11) package's drain tab provides Kelvin-source connectivity that simplifies thermal management on 2-oz copper. Designers select this part for compact, surface-mount POL modules where efficiency, size, and thermal performance are critical.
تجویز کردہ
Battery Management Load Switch
The IPD031N03LGATMA1 serves as a high-current load-disconnect switch in 12 V Li-ion battery management systems (BMS) for e-mobility and energy-storage applications. Its 90 A continuous current rating easily handles 5-10 kW peak loads, while the 3.1 mΩ RDS(on) limits steady-state voltage drop to ~93 mV at 30 A, preserving battery runtime. The MOSFET's low Qg allows PWM dimming or soft-start control via the gate pin. Place it in series with the battery positive rail, gate-pulled high through a 10 kΩ resistor and driven by a logic-level MOSFET driver for sub-microsecond disconnect response.
تجویز کردہ
Hot-Swap / OR-ing Controller Switch
In redundant -48 V telecom power OR-ing applications, the IPD031N03LGATMA1 acts as the OR-ing FET that prevents reverse current between paralleled power supplies. Its ultra-low 3.1 mΩ RDS(on) minimizes power dissipation to ~4.5 W at 38 A, allowing natural convection cooling on the PCB. The 30 V Vdss comfortably exceeds the 28 V regulated -48 V OR-ing voltage with margin for transients. Drive the gate with a dedicated OR-ing controller IC that regulates VGS to maintain a controlled forward voltage drop, minimizing both conduction and switching losses during supply switchover.
تجویز کردہ
DC Motor Drive (H-Bridge Low-Side)
The IPD031N03LGATMA1 is well-suited as the low-side switch in a 4-MOSFET H-bridge driving 12-24 V brushed DC motors up to 30 A continuous. Its 94 W power dissipation and DPAK-2 package handle repetitive 50 A peak inrush currents during motor startup without thermal shutdown. The 30 V Vdss rating supports inductive flyback transients up to ~50 V with adequate snubber sizing. Configure two IPD031N03LGATMA1 on the low side and two P-channel or higher-voltage N-channel MOSFETs on the high side, with a dedicated gate driver like the IR2114S for level shifting.
تجویز کردہ
Industrial 24V Bus Solid-State Relay (SSR)
In industrial automation, the IPD031N03LGATMA1 functions as the switching element in a 24 V DC solid-state relay (SSR) replacing mechanical contactors. Its 90 A current rating handles solenoid and motor loads, while the 3.1 mΩ RDS(on) keeps on-state voltage drop below 0.3 V at full load, eliminating heat sinks in compact panel-mount designs. The MOSFET's optical-isolated gate drive provides 5 kV galvanic isolation between logic and load, meeting IEC 61131-2 industrial control standards. Designers typically pair it with an optocoupler and gate-driver network to achieve sub-100 µs turn-off times for safety-critical applications.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD031N03LGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC014N04LSATMA1 | BSC0501NSIATMA1 | BSC0911NDATMA1 | BSC034N06NSATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-to-Source Voltage (Vdss) | 30 V | 40 V | 100 V | 30 V | 60 V |
| Continuous Drain Current @ 25°C | 90 A | 100 A | 50 A | 70 A | 85 A |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | 1.4 mΩ | 50 mΩ | 9 mΩ | 3.4 mΩ |
| Power Dissipation | 94 W | 94 W | 94 W | 94 W | 94 W |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 30 V DPAK-2 class (بمقابلہBSC0911NDATMA1)
- Higher peak current capability than 40V alternatives (بمقابلہBSC014N04LSATMA1)
- Optimized for 12V synchronous rectification (بمقابلہBSC0501NSIATMA1)
- Same footprint as 60V alternatives enables design reuse (بمقابلہBSC034N06NSATMA1)
ڈیزائن نوٹس
Estimated: at 30 A continuous load and RDS(on) of 3.1 mΩ, the IPD031N03LGATMA1 dissipates approximately 2.8 W of conduction loss. With the PG-TO252-3-11 package thermal resistance of approximately 50 °C/W on a 200 mm² 2-oz copper pour, the junction temperature rises ~140 °C above ambient. For sustained 30 A operation, increase copper area to at least 400 mm² on both top and bottom layers, or add a small clip-on heatsink. Without these measures, sustained operation above 25 A risks thermal shutdown at the 175 °C Tj limit.
Place the gate-drive loop (gate resistor to gate pin to source pin back to driver ground) in a tight area of less than 10 mm² to minimize parasitic inductance. Excessive gate-loop inductance causes ringing and can exceed the ±20 V VGS absolute-maximum rating during turn-off. Keep the drain tab (DPAK back-metal) soldered to a continuous copper pour with at least 8 thermal vias (0.3 mm drill) underneath to provide low thermal resistance to inner PCB layers. Avoid routing high-current drain traces on inner layers where thermal dissipation is poor.
Do not exceed 30 V Vds even transiently; use a TVS clamp such as SMBJ5.0A across drain-to-source for inductive loads. Avoid operating below the 4.5 V gate-threshold region — incomplete enhancement can cause linear-region operation and rapid thermal failure. When used as a synchronous rectifier, ensure the dead-time between high-side and low-side switching is less than 100 ns to limit body-diode conduction loss. Finally, never connect the source pin to the drain tab, as the tab is internally bonded to drain (not source) in DPAK-2.
In high-frequency switching applications (>200 kHz), the OptiMOS 3's ultra-low Qg (~30 nC typical) reduces gate-drive losses, but the gate resistor value is critical. Use 4.7 Ω to 10 Ω gate resistors to dampen ringing without sacrificing switching speed. Add a 100 kΩ gate-source pull-down resistor to ensure the MOSFET stays off during controller power-up when gate-drive voltage is undefined. For pulse-width-modulated applications, verify that the gate-driver IC has sufficient source/sink current capability (≥2 A peak) to fully charge the MOSFET input capacitance within 20 ns.
تعمیل کی معلومات
RoHS compliant and lead-free per Infineon product declaration. Halogen-free molding compound per Infineon OptiMOS 3 family standard. AEC-Q100 not applicable — this is a power MOSFET, not an automotive-qualified IC; no Q1 or Q-qualified variant in this package. REACH SVHC declarations available through Infineon environmental portal.
