IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon
MPN: IPL60R065C7AUMA1 ✓ فعالIPL60R065C7AUMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the primary active switching element in modern switched-mode power supplies (SMPS), used to chop a DC input into a high-frequency AC waveform that is then transformed, rectified, and filtered. The IPL60R065C7AUMA1 belongs to the high-voltage MOSFET hierarchy: MOSFET → power MOSFET → superjunction MOSFET → CoolMOS family → 600V class. The superjunction architecture replaces the conventional planar drift region with alternating P/N columns, dramatically reducing on-state resistance per unit area and gate charge for a given breakdown voltage.
Key features include 65 mΩ typical R_DS(on) at V_GS = 10 V, an integrated gate-source Zener clamp for ESD protection, and a source-down package construction that maximizes PCB copper utilisation for cooling. The device also delivers very low switching losses (E_OSS typically < 4 µJ) and supports dv/dt robustness typical of the CoolMOS C7 family, simplifying EMI filter design in hard-switched PFC and LLC topologies.
Architecturally, the CoolMOS C7 generation refines the C3/C6 platforms with reduced gate charge (Q_G typ. ~70 nC) and improved body-diode reverse-recovery softness, enabling higher switching frequencies (>100 kHz in PFC) without sacrificing efficiency. The source-down PG-VSON-4-1 footprint removes the traditional drain-tab, allowing the drain current path to flow directly into top-side copper rather than through a thermal via array.
Typical applications include server and telecom 80 PLUS Titanium-grade switched-mode power supplies, industrial welding and induction heating converters, solar inverters, on-board EV chargers, and high-frequency telecom rectifier modules. Its low Q_G × R_DS(on) figure of merit also suits synchronous rectification on the secondary side of high-power AC/DC converters.
When designing with this MOSFET, place multiple thermal vias directly under the source-down pad to channel heat into inner copper planes, and keep the gate-drive loop area minimal (gate resistor + driver return path < 5 mm²) to suppress ringing at turn-on. Verify creepage and clearance for the 600V rating against pollution degree requirements in your end equipment.
This page synthesizes distributor pricing, drop-in CoolMOS alternatives in the same PG-VSON-4-1 footprint, and PCB layout notes that complement the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IPL60R065C7AUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPL60R065C7AUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Technology, Series, Mounting Type.
IPL60R075C7AUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPL60R105P7AUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB60R040CFD7ATMA1
✅ ڈراپ-اِن✓ اسٹاک میں
$5.19 / یونٹ
ڈیٹا شیٹ دیکھیں →IPB60R280P7ATMA1
✅ ڈراپ-اِن✗ اسٹاک سے باہر
$0.88 / یونٹ
ڈیٹا شیٹ دیکھیں →IPW60R037P7XKSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB60R055CFD7ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPL60R065C7AUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| Part Status | Active |
| FET Type | N-Channel |
| Process Technology | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W |
| Gate-Source Voltage (V_GS, max) | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V |
| پیکیج / کیس | PG-VSON-4-1 (Source-Down) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C (T_J) |
| RoHS اسٹیٹس | Compliant with Exemption |
| Automotive Qualified (AEC-Q101) | No |
IPL60R065C7AUMA1 پن کنفیگریشن
| پن 1 | Source (S) — Source terminal (low-side power path) |
| پن 2 | Source (S) — Source terminal (low-side power path, paralleled with pin 1) |
| پن 3 | Gate (G) — Gate drive input, ESD-protected via Zener clamp |
| پن 4 | Drain (D) — Drain terminal on bottom exposed pad (high-voltage switching node) |
محفوظ آپریٹنگ ایریا (DC, T_C=25°C)
عام استعمالات
IPL60R065C7AUMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Server & Telecom SMPS (PFC + LLC), Solar String Inverters, On-Board EV Charger (OBC), Industrial Welding & Induction Heating, Telecom Rectifier Modules (48 V), HID & Stage Lighting Ballasts.
Server & Telecom SMPS (PFC + LLC)
The IPL60R065C7AUMA1 fits server and telecom switched-mode power supplies targeting 80 PLUS Titanium efficiency. Its 65 mΩ R_DS(on) and 600 V V_DS handle universal AC input (90–264 V) PFC front ends delivering 380–400 V DC bus, while low Q_G and E_OSS keep switching losses low in 100 kHz+ LLC converters. CoolMOS C7's low Q_RR also simplifies synchronous rectification on the secondary side. Designers can pair it with Infineon EiceLBRIDGE gate drivers and XDPE digital controllers for full-titanium 1U/2U server PSU designs.
تجویز کردہ
Solar String Inverters
In residential and small-commercial solar string inverters, the IPL60R065C7AUMA1 serves as the boost-PFC switch or full-bridge inverter switch on the DC-AC stage. The 600 V rating accommodates the 380–400 V intermediate bus, and the 65 mΩ R_DS(on) minimises conduction losses at high DC currents typical of 3–10 kW single-phase inverters. The PG-VSON-4-1 source-down footprint enables top-side copper cooling critical for sealed IP65 inverter enclosures. Pairing with a CoolMOS C7 fast-body-diode variant or SiC diode improves dead-time behaviour and overall CEC-weighted efficiency.
تجویز کردہ
On-Board EV Charger (OBC)
The IPL60R065C7AUMA1 suits 3.3–11 kW on-board EV chargers operating from single-phase or three-phase mains. Its 600 V V_DS tolerates rectified 380 V three-phase bus, and the 65 mΩ R_DS(on) keeps PFC conduction losses low across the wide load range required by OBC charge profiles. CoolMOS C7's avalanche ruggedness supports repetitive clamping during load-dump transients. Engineers typically combine this MOSFET with ISO 26262-qualified gate drivers (1ED020I12B2XUMA1) and a DSP/MCU implementing digital charge control for ISO 15118 readiness.
تجویز کردہ
Industrial Welding & Induction Heating
The IPL60R065C7AUMA1 is well-suited for industrial welding and induction-heating converters that demand high-frequency, high-current switching from a 600 V DC link. CoolMOS C7's low E_OSS reduces switching losses at 100–200 kHz, while its 180 W power dissipation rating supports continuous industrial-duty operation with adequate heatsinking. The source-down PG-VSON-4-1 package allows direct mounting to a water-cooled or fan-cooled cold plate via top-side copper. Designers should size gate-drive peak currents per Infineon's C7 application notes to keep dv/dt below EMI limits.
تجویز کردہ
Telecom Rectifier Modules (48 V)
In -48 V telecom rectifier modules, the IPL60R065C7AUMA1 often serves in bridgeless totem-pole PFC front ends achieving 96–98 % efficiency at 50 % load (80 PLUS Titanium-equivalent curve). CoolMOS C7's fast body diode and low Q_RR minimise dead-time losses, while the 600 V rating tolerates wide mains variations and transient spikes on telecom DC plants. The PG-VSON-4-1 footprint supports high power density (>30 W/in³) designs used in next-gen compact rectifiers.
تجویز کردہ
HID & Stage Lighting Ballasts
The IPL60R065C7AUMA1 is used in electronic ballasts for high-intensity-discharge (HID) lamps and stage-lighting dimmers where 600 V blocking and fast switching enable compact, dimmable designs. CoolMOS C7's low gate charge simplifies dimming-PWM control, and the source-down package keeps the thermal path short in enclosed fixture housings. Designers typically pair the MOSFET with an MCU dimming controller and PFC controller to meet EN 61000-3-2 harmonic standards.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPL60R065C7AUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPL60R075C7AUMA1 | IPL60R105P7AUMA1 | IPB60R040CFD7ATMA1 | IPB60R280P7ATMA1 | IPW60R037P7XKSA1 | IPB60R055CFD7ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4-1 | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) |
| Technology | CoolMOS C7 | CoolMOS C7 | CoolMOS P7 | CoolMOS CFD7 | CoolMOS P7 | CoolMOS P7 | CoolMOS CFD7 |
| V_DS max (V) | 600 | 600 | 600 | 600 | 600 | 600 | 600 |
| R_DS(on) typ. (mΩ) @ V_GS=10V | 65 | 75 | 105 | 40 | 280 | 37 | 55 |
| Body Diode | Standard (C7) | Standard (C7) | Standard (P7) | Fast-body-diode (CFD7) | Standard (P7) | Standard (P7) | Fast-body-diode (CFD7) |
اہم امتیازی خصوصیات
- CoolMOS C7 superjunction with 65 mΩ R_DS(on) in source-down PG-VSON-4-1 (بمقابلہIPL60R105P7AUMA1 (P7 generation, 105 mΩ))
- Source-down package enables top-side copper cooling (بمقابلہIPB60R040CFD7ATMA1 (similar package, fast-body-diode))
- Industry-standard 600 V V_DS rating for universal-input PFC (بمقابلہIPB60R280P7ATMA1 (280 mΩ, higher resistance))
- Wide distributor availability at sub-$5 qty-1 pricing (بمقابلہIPW60R037P7XKSA1 (P7 with 37 mΩ))
ڈیزائن نوٹس
Estimated: at I_D = 10 A continuous and T_C = 100 °C with the PG-VSON-4-1 source-down package, the IPL60R065C7AUMA1 dissipates roughly 6.5 W into the top-side copper pad. Provide at least 600 mm² of 2 oz top copper and thermal vias on inner layers to keep θ_JA below 50 °C/W; without thermal copper the package can exceed 150 °C junction at high duty cycles.
PG-VSON-4-1 is a source-down package: pins 1–2 carry the source return, pin 3 is the gate, and the bottom exposed pad is the drain. Place the gate-loop return (gate resistor → source pad) within 5 mm² to suppress turn-on ringing; use a Kelvin-source connection on a dedicated source pin if switching >300 kHz. The source-down topology lets you connect the high-current return directly to a top-side copper pour without thermal vias under the drain tab.
Keep creepage ≥ 6 mm and clearance ≥ 4 mm between the drain node and any low-voltage signal traces to satisfy pollution-degree-3, IEC 60950 / IEC 62368-1 requirements at 600 V. Place the Y-cap from PFC output to protective-earth close to the MOSFET drain to limit common-mode EMI from the high dv/dt node.
Do not exceed V_GS = ±20 V; the integrated gate-source Zener protects against ESD but not against sustained over-voltage from a misconfigured gate driver. Always include a 10 kΩ gate pull-down resistor to keep the MOSFET off during controller start-up. For hard-switched PFC bridges, verify reverse-recovery behaviour of the CoolMOS body diode or pair with a SiC anti-parallel diode for the lowest switching loss.
تعمیل کی معلومات
RoHS compliant with exemption per Arrow product page; SVHC above threshold disclosed (Reach). Not AEC-Q100/AEC-Q101 qualified - choose IPD-series qualified variants for automotive. Halogen-free status not explicitly stated in web data and marked unknown.
