IRF7779L2TRPBF - 150V 67A HEXFET N-Channel MOSFET | Infineon
MPN: IRF7779L2TRPBF ✓ فعالIRF7779L2TRPBF جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for power conversion and switching. Within the device taxonomy, the IRF7779L2 sits in the N-channel enhancement-mode MOSFET family, which is the dominant topology for low-side and synchronous-rectifier switching in modern SMPS designs because N-channel carriers offer ~2-3x lower RDS(on) per unit silicon area than equivalent P-channel parts.
Key features include a 150 V drain-to-source breakdown voltage, 67 A continuous drain current (Tc) and 11 nC total gate charge. Power dissipation is rated 3.3 W at TA=25C and 125 W at Tc=25C, supporting both thermally-limited PCB designs and large-conduction heatsink-based layouts. The DirectFET L8 case is dual-side cooled via metal can construction, removing the need for an external thermal pad and reducing package parasitic inductance versus D2PAK/TO-220.
The device uses Infineon's fifth-generation HEXFET trench process, achieving low figure-of-merit (FOM = RDS(on) x Qg) for high-frequency isolated-converter primary-side switching. Optimized for hard-switched topologies up to several hundred kHz, it is also suited for OR-ing and hot-swap roles where low conduction loss matters more than switching speed.
Typical applications include isolated DC-DC converter primary switches in telecom bricks, server and datacom 48 V intermediate bus converters, motor-drive H-bridges (low-side position), hot-swap / eFuse circuits, and battery protection FETs in 96-100 V lithium packs. The 150 V rating gives comfortable margin below the 100 V telecom bus.
When designing with this part, follow DirectFET land-pattern guidelines exactly - the metal can doubles as the drain terminal and requires precise stencil apertures for the side-cooling vias. VGS(th) is in the 2-4 V range, so a 10 V gate drive is mandatory for full RDS(on) and lowest conduction loss.
This page consolidates distributor pricing, same-footprint DirectFET alternatives, and DirectFET-specific design notes not found on stock catalog pages.
کے لیے ڈراپ اِن متبادل IRF7779L2TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF7779L2TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف RDS(on) max at VGS=10V.
IRF7779L2TR1PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7749L2TRPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
AUIRF7759L2TR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7799L2TRPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7779L2TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF7779L2TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 67 A |
| RDS(on) max at VGS=10V | 11 mOhm |
| RDS(on) typical at VGS=10V | 7.7 mOhm |
| Gate-to-Source Voltage (VGS) max | 20 V |
| Total Gate Charge (Qg) | 11 nC |
| Power Dissipation (PD) at Tc=25C | 125 W |
| Power Dissipation (PD) at TA=25C | 3.3 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| Technology | HEXFET (IR MOSFET) |
| پیکیج | DirectFET Isometric L8 |
| Profile Height | 0.7 mm |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
IRF7779L2TRPBF پن کنفیگریشن
| پن 1 | Source — Source terminal (top metal can side via castellations) |
| پن 2 | Source — Source terminal |
| پن 3 | Gate — Gate drive input |
| پن 4 | Source — Source terminal |
| پن 5 | Source — Source terminal |
| پن 6 | Source — Source terminal |
| پن 7 | Drain — Drain terminal (bottom metal can) |
| پن 8 | Drain — Drain terminal (top metal can) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRF7779L2TRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom Isolated DC-DC Primary Switch, Server & Datacom 48V Intermediate Bus Converter, Hot-Swap and eFuse Power Path Control, Industrial Brushless DC Motor Drive, Lithium Battery Pack Discharge and Protection FET, Solar Inverter DC-Boost Stage.
48V Telecom Isolated DC-DC Primary Switch
The IRF7779L2TRPBF serves as the primary-side MOSFET in 48 V telecom brick converters and intermediate bus architectures. Its 150 V VDS rating provides 3x margin over the 100 V telecom bus transient envelope, while 11 mOhm RDS(on) at VGS=10 V limits conduction loss to roughly 5 W at 20 A primary current. The DirectFET L8's dual-side cooling removes heat through both PCB copper and the top metal can, allowing sustained operation at 67 A with appropriate thermal design. The 11 nC total gate charge keeps gate-drive loss manageable at 200-300 kHz switching frequencies used in modern full-bridge and half-bridge topologies.
تجویز کردہ
Server & Datacom 48V Intermediate Bus Converter
In server and hyperscale datacom power shelves, the IRF7779L2TRPBF is well matched to 48 V to point-of-load bus converter primary stages. The 150 V breakdown withstands transient ringing caused by transformer leakage inductance and reflected load steps, while the 11 mOhm RDS(on) and 11 nC Qg combination yields a low figure-of-merit suitable for 200-500 kHz switching. DirectFET's metal-can drain terminal also reduces package parasitic inductance, limiting voltage overshoot and improving EMI margin in high-density server boards where layout area is constrained.
تجویز کردہ
Hot-Swap and eFuse Power Path Control
The IRF7779L2TRPBF acts as the in-line series MOSFET for -48 V telecom and 48 V datacom hot-swap controllers, where it must withstand sudden inrush currents without entering thermal runaway. The 11 mOhm RDS(on) drops only ~110 mV at 10 A continuous, well within typical hot-swap design budgets, while the 150 V VDS tolerates the doubled input voltage seen during load-dump transients. The 67 A continuous current rating supports 3-5x transient overload needed during board-capacitor charging, and the DirectFET L8 package's dual-side cooling simplifies thermal management in front-panel-board layouts.
تجویز کردہ
Industrial Brushless DC Motor Drive
In industrial BLDC motor drives operating on 48-100 V DC bus rails, the IRF7779L2TRPBF can serve as the low-side switch of a three-phase inverter. The 11 mOhm RDS(on) reduces conduction loss during the long low-side conduction interval of trapezoidal commutation, while the 67 A current rating covers multi-kW industrial servo applications. The DirectFET L8 package's 0.7 mm profile enables compact inverter modules, and the metal-can top contact allows direct attachment to an aluminum chassis heatsink for sustained high-current operation in industrial automation equipment.
تجویز کردہ
Lithium Battery Pack Discharge and Protection FET
The IRF7779L2TRPBF is well suited as the high-side or low-side discharge MOSFET in 48-96 V lithium-ion battery packs, where its 150 V VDS provides safety margin over nominal pack voltage and protects against back-EMF transients from regenerative loads. The 11 mOhm RDS(on) limits steady-state conduction loss during high-C discharge, and the 67 A continuous current supports sustained 2C-3C discharge rates common in e-mobility and industrial battery applications. DirectFET's mechanical robustness with no external leads also resists vibration and shock in mobile battery enclosures.
تجویز کردہ
Solar Inverter DC-Boost Stage
The IRF7779L2TRPBF can serve as the switching element in residential and small-commercial solar inverter DC-DC boost stages where the input DC bus ranges from 30-100 V. Its 150 V breakdown comfortably tolerates maximum-power-point transient overshoots, while the 11 mOhm RDS(on) reduces I^2R losses in continuous-current mode operation. The DirectFET L8's top-side thermal pad enables direct attachment to the inverter enclosure heatsink, supporting the long-term continuous conduction typical of solar MPPT operation in outdoor installations where ambient temperatures can reach 70C.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF7779L2TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF7779L2TR1PBF | IRF7749L2TRPBF | AUIRF7759L2TR | IRF7799L2TRPBF |
|---|---|---|---|---|---|
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 150 V | 150 V | 100 V | 40 V | 250 V |
| Automotive Grade (AEC-Q101) | No | No | No | Yes (AEC-Q101) | No |
اہم امتیازی خصوصیات
- Highest VDS rating in the DirectFET L8 family (بمقابلہIRF7749L2TRPBF)
- Only standard-grade (non-automotive) option above 100 V in DirectFET L8 (بمقابلہAUIRF7759L2TR)
- Identical silicon to the TR1 reel variant (بمقابلہIRF7779L2TR1PBF)
ڈیزائن نوٹس
Estimated thermal analysis: at 67 A full load and VGS=10 V, conduction loss alone is I^2 x RDS(on) = 67^2 x 0.011 = 49 W using the maximum rating. With RthJC below 1 C/W, junction temperature rise above case is approximately 49C, putting Tj at 74C with Tc=25C - safe. However on a JEDEC EIA/JESD51 4-layer PCB without top-side heatsink, the practical continuous current is limited by the 3.3 W TA=25C power rating and a 45-55 C/W RthJA. Use a top-side heatsink clamped to the metal can to extract additional 30-50 W.
DirectFET L8 requires a precise land pattern with castellations acting as source connections. Use the Infineon recommended land pattern from the datasheet, not a D2PAK footprint - the metal can itself is the drain and must be soldered to a top-side copper pour. Side-cooling via thermal vias under the drain pad should be filled and plated for best thermal transfer. Do NOT route signals under the metal can - the drain floats at switching-node potential and couples capacitively into the layers below.
VGS(th) for HEXFET generation-5 silicon is typically 2-4 V, so a 5 V gate drive may not fully enhance the device - always use a 10 V gate-drive rail for the rated 11 mOhm RDS(on). Also ensure VGS never exceeds +/-20 V absolute maximum - gate-source ESD strikes are a common failure mode in hot-swap circuits. Add a 10 kOhm gate-source resistor to prevent floating-gate turn-on during high dV/dt transitions.
Minimize the high-side gate-drive loop area to limit parasitic inductance that can cause VGS ringing and shoot-through. Place the gate-drive IC within 5 mm of the gate pin, use a 10-22 Ohm gate resistor to dampen ringing, and route the gate return directly to the source castellations, NOT through a long ground path. For switching frequencies above 200 kHz, consider a kelvin-source connection via an extra source pin.
تعمیل کی معلومات
Pb-free (PBF suffix) and RoHS compliant per Infineon product page. The 'AU' prefix variant (AUIRF7759L2TR) carries AEC-Q101 automotive qualification; the standard IRF7779L2TRPBF is industrial grade. DirectFET packages contain no exposed plastic leads, simplifying halogen-free compliance.
