IRF7779L2TRPBF - 150V 67A HEXFET N-Channel MOSFET | Infineon
MPN: IRF7779L2TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.52 | $4.52 |
| 10 | $4.07 | $40.70 |
| 100 | $3.62 | $362.00 |
| 500 | $3.26 | $1,630.00 |
| 1,000 | $2.9 | $2,900.00 |
Drop-in alternatives for IRF7779L2TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7779L2TR1PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7749L2TRPBF
β Drop-Inπ Reference alternative (not in catalog)
AUIRF7759L2TR
β Drop-Inπ Reference alternative (not in catalog)
IRF7799L2TRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRF7779L2TRPBF
β Drop-Inβ In Stock
$2.9 / Unit
View Datasheet βIRF7779L2TRPBF Maximum Ratings & Electrical Characteristics
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 67 A |
| RDS(on) max at VGS=10V | 11 mOhm |
| RDS(on) typical at VGS=10V | 7.7 mOhm |
| Gate-to-Source Voltage (VGS) max | 20 V |
| Total Gate Charge (Qg) | 11 nC |
| Power Dissipation (PD) at Tc=25C | 125 W |
| Power Dissipation (PD) at TA=25C | 3.3 W |
| Operating Junction Temperature | -55C to +175C |
| Technology | HEXFET (IR MOSFET) |
| Package | DirectFET Isometric L8 |
| Profile Height | 0.7 mm |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IRF7779L2TRPBF Pin Configuration
| Pin 1 | Source β Source terminal (top metal can side via castellations) |
| Pin 2 | Source β Source terminal |
| Pin 3 | Gate β Gate drive input |
| Pin 4 | Source β Source terminal |
| Pin 5 | Source β Source terminal |
| Pin 6 | Source β Source terminal |
| Pin 7 | Drain β Drain terminal (bottom metal can) |
| Pin 8 | Drain β Drain terminal (top metal can) |
Safe Operating Area (DC)
Typical Applications
IRF7779L2TRPBF is suitable for 6 applications: 48V Telecom Isolated DC-DC Primary Switch, Server & Datacom 48V Intermediate Bus Converter, Hot-Swap and eFuse Power Path Control, Industrial Brushless DC Motor Drive, Lithium Battery Pack Discharge and Protection FET, Solar Inverter DC-Boost Stage.
48V Telecom Isolated DC-DC Primary Switch
The IRF7779L2TRPBF serves as the primary-side MOSFET in 48 V telecom brick converters and intermediate bus architectures. Its 150 V VDS rating provides 3x margin over the 100 V telecom bus transient envelope, while 11 mOhm RDS(on) at VGS=10 V limits conduction loss to roughly 5 W at 20 A primary current. The DirectFET L8's dual-side cooling removes heat through both PCB copper and the top metal can, allowing sustained operation at 67 A with appropriate thermal design. The 11 nC total gate charge keeps gate-drive loss manageable at 200-300 kHz switching frequencies used in modern full-bridge and half-bridge topologies.
Recommended
Server & Datacom 48V Intermediate Bus Converter
In server and hyperscale datacom power shelves, the IRF7779L2TRPBF is well matched to 48 V to point-of-load bus converter primary stages. The 150 V breakdown withstands transient ringing caused by transformer leakage inductance and reflected load steps, while the 11 mOhm RDS(on) and 11 nC Qg combination yields a low figure-of-merit suitable for 200-500 kHz switching. DirectFET's metal-can drain terminal also reduces package parasitic inductance, limiting voltage overshoot and improving EMI margin in high-density server boards where layout area is constrained.
Recommended
Hot-Swap and eFuse Power Path Control
The IRF7779L2TRPBF acts as the in-line series MOSFET for -48 V telecom and 48 V datacom hot-swap controllers, where it must withstand sudden inrush currents without entering thermal runaway. The 11 mOhm RDS(on) drops only ~110 mV at 10 A continuous, well within typical hot-swap design budgets, while the 150 V VDS tolerates the doubled input voltage seen during load-dump transients. The 67 A continuous current rating supports 3-5x transient overload needed during board-capacitor charging, and the DirectFET L8 package's dual-side cooling simplifies thermal management in front-panel-board layouts.
Recommended
Industrial Brushless DC Motor Drive
In industrial BLDC motor drives operating on 48-100 V DC bus rails, the IRF7779L2TRPBF can serve as the low-side switch of a three-phase inverter. The 11 mOhm RDS(on) reduces conduction loss during the long low-side conduction interval of trapezoidal commutation, while the 67 A current rating covers multi-kW industrial servo applications. The DirectFET L8 package's 0.7 mm profile enables compact inverter modules, and the metal-can top contact allows direct attachment to an aluminum chassis heatsink for sustained high-current operation in industrial automation equipment.
Recommended
Lithium Battery Pack Discharge and Protection FET
The IRF7779L2TRPBF is well suited as the high-side or low-side discharge MOSFET in 48-96 V lithium-ion battery packs, where its 150 V VDS provides safety margin over nominal pack voltage and protects against back-EMF transients from regenerative loads. The 11 mOhm RDS(on) limits steady-state conduction loss during high-C discharge, and the 67 A continuous current supports sustained 2C-3C discharge rates common in e-mobility and industrial battery applications. DirectFET's mechanical robustness with no external leads also resists vibration and shock in mobile battery enclosures.
Recommended
Solar Inverter DC-Boost Stage
The IRF7779L2TRPBF can serve as the switching element in residential and small-commercial solar inverter DC-DC boost stages where the input DC bus ranges from 30-100 V. Its 150 V breakdown comfortably tolerates maximum-power-point transient overshoots, while the 11 mOhm RDS(on) reduces I^2R losses in continuous-current mode operation. The DirectFET L8's top-side thermal pad enables direct attachment to the inverter enclosure heatsink, supporting the long-term continuous conduction typical of solar MPPT operation in outdoor installations where ambient temperatures can reach 70C.
Recommended
Recommended Products Summary
Engineering reference data for IRF7779L2TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7779L2TR1PBF | IRF7749L2TRPBF | AUIRF7759L2TR | IRF7799L2TRPBF |
|---|---|---|---|---|---|
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 150 V | 150 V | 100 V | 40 V | 250 V |
| Continuous Drain Current (Tc=25C) | 67 A | 67 A | 95 A | [DATA_NEEDED] | 40 A |
| RDS(on) max at VGS=10V | 11 mOhm | 11 mOhm | 4.7 mOhm | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge Qg | 11 nC | 11 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at Tc=25C | 125 W | 125 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade (AEC-Q101) | No | No | No | Yes (AEC-Q101) | No |
Key Differentiators
- Highest VDS rating in the DirectFET L8 family (vs IRF7749L2TRPBF)
- Only standard-grade (non-automotive) option above 100 V in DirectFET L8 (vs AUIRF7759L2TR)
- Identical silicon to the TR1 reel variant (vs IRF7779L2TR1PBF)
Design Notes
Estimated thermal analysis: at 67 A full load and VGS=10 V, conduction loss alone is I^2 x RDS(on) = 67^2 x 0.011 = 49 W using the maximum rating. With RthJC below 1 C/W, junction temperature rise above case is approximately 49C, putting Tj at 74C with Tc=25C - safe. However on a JEDEC EIA/JESD51 4-layer PCB without top-side heatsink, the practical continuous current is limited by the 3.3 W TA=25C power rating and a 45-55 C/W RthJA. Use a top-side heatsink clamped to the metal can to extract additional 30-50 W.
DirectFET L8 requires a precise land pattern with castellations acting as source connections. Use the Infineon recommended land pattern from the datasheet, not a D2PAK footprint - the metal can itself is the drain and must be soldered to a top-side copper pour. Side-cooling via thermal vias under the drain pad should be filled and plated for best thermal transfer. Do NOT route signals under the metal can - the drain floats at switching-node potential and couples capacitively into the layers below.
VGS(th) for HEXFET generation-5 silicon is typically 2-4 V, so a 5 V gate drive may not fully enhance the device - always use a 10 V gate-drive rail for the rated 11 mOhm RDS(on). Also ensure VGS never exceeds +/-20 V absolute maximum - gate-source ESD strikes are a common failure mode in hot-swap circuits. Add a 10 kOhm gate-source resistor to prevent floating-gate turn-on during high dV/dt transitions.
Minimize the high-side gate-drive loop area to limit parasitic inductance that can cause VGS ringing and shoot-through. Place the gate-drive IC within 5 mm of the gate pin, use a 10-22 Ohm gate resistor to dampen ringing, and route the gate return directly to the source castellations, NOT through a long ground path. For switching frequencies above 200 kHz, consider a kelvin-source connection via an extra source pin.
Compliance Information
Pb-free (PBF suffix) and RoHS compliant per Infineon product page. The 'AU' prefix variant (AUIRF7759L2TR) carries AEC-Q101 automotive qualification; the standard IRF7779L2TRPBF is industrial grade. DirectFET packages contain no exposed plastic leads, simplifying halogen-free compliance.
