BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon
MPN: BSZ070N08LS5ATMA1 ✓ فعالBSZ070N08LS5ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used in synchronous rectification, DC-DC conversion, and load switching. Within the broader taxonomy, this part belongs to: N-channel MOSFET -> enhancement-mode power MOSFET -> OptiMOS 5 family -> Infineon 80 V logic-level platform -> power-management discrete. The OptiMOS 5 generation targets lower RDS(on) per mm² and lower gate charge than prior OptiMOS generations, which directly improves conduction loss and switching loss in high-frequency SMPS designs.
Key electrical features include a low 7 mΩ maximum on-resistance, a logic-level gate drive threshold for 4.5 V MCU compatibility, low Qg and Qgd figures that minimize driver losses, and an avalanche-rated body diode for robust handling of inductive transients. The PQFN 3.3 x 3.3 mm package provides low parasitic inductance and an exposed drain pad for direct PCB heatsinking. Compared with older OptiMOS 3 or STD-MOSFET equivalents, this part offers a noticeably lower figure-of-merit (FOM = RDS(on) × Qg), which is the principal engineering reason for its selection in modern high-density converters.
Typical applications include synchronous buck converters for 48 V telecom and datacom rails, USB-PD and wireless-charging adapters, motor-drive half-bridges in battery-powered tools, and hot-swap / OR-ing switches on 12 V to 48 V distribution buses. The part's logic-level gate makes it particularly attractive as a low-side synchronous rectifier directly driven by a 5 V PWM controller.
When designing with this device, gate-drive strength and dead-time optimization are critical: pair the BSZ070N08LS5ATMA1 with a gate driver capable of 1-2 A peak source/sink current, and minimize high-side/low-side dead-time to limit body-diode conduction losses. The exposed pad must be soldered to a sufficiently large copper pour to keep the junction temperature within the rated 150 °C maximum.
کے لیے ڈراپ اِن متبادل BSZ070N08LS5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSZ070N08LS5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
BSC070N08LS5
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC052N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ0901NSATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSZ096N10LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC0802NLSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ070N08LS5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | 80 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) |
| Power Dissition PD max at TC | 69 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +150 °C |
| پیکیج | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (per JEDEC J-STD-020, unleaded reflow) |
| RoHS اسٹیٹس | Compliant |
| Avalanche Rated | Yes |
| Reel Quantity | 5000 per 13-inch reel (T&R) |
BSZ070N08LS5ATMA1 پن کنفیگریشن
| پن 1 | G — Gate (logic-level, 4.5 V drive compatible) |
| پن 2 | S — Source |
| پن 3 | S — Source |
| پن 4 | S — Source |
| پن 5 | D — Drain (substrate internally connected) |
| پن 6 | S — Source |
| پن 7 | S — Source |
| پن 8 | S — Source |
| پن PAD | D — Drain thermal pad (bottom-exposed, must be soldered to PCB copper for thermal dissipation) |
محفوظ آپریٹنگ ایریا (DC, Tj = 25 °C)
عام استعمالات
BSZ070N08LS5ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: 48 V Telecom / Datacom Synchronous Buck, USB-PD and Wireless-Charging Adapters, Battery-Powered Tools Motor Drive, Hot-Swap and OR-ing Switches on 24-48 V Bus, Automotive 12 V / 24 V Load Switching, Solar Microinverter Primary-Side Switch, Industrial Robotics BLDC Drive.
48 V Telecom / Datacom Synchronous Buck
The BSZ070N08LS5ATMA1 fits 48 V telecom and datacom synchronous buck converters as a low-side synchronous rectifier. Its 80 V VDS provides ample margin above the nominal 48 V rail, while the 7 mΩ RDS(on) keeps conduction loss low at the 20-40 A load currents typical of intermediate bus converters. The logic-level gate threshold allows direct drive from a 5 V PWM controller output, eliminating the need for a separate gate-driver bootstrap for the low-side FET and simplifying the bill of materials.
تجویز کردہ
USB-PD and Wireless-Charging Adapters
In USB-PD adapters and wireless-charging transmitter stages, the BSZ070N08LS5ATMA1 serves as the primary-side high-voltage switch in flyback or active-clamp topologies. The 7 mΩ RDS(on) minimizes primary conduction loss at the 100-200 kHz switching frequencies typical of GaN-replacement silicon designs, while the 80 V rating comfortably covers the 400 V PFC bulk rail derated for resonant topologies. Its PQFN 3.3 x 3.3 mm footprint is small enough to fit in 18-30 W wall-adapter form factors.
تجویز کردہ
Battery-Powered Tools Motor Drive
The BSZ070N08LS5ATMA1 suits 18-36 V cordless-tool motor half-bridges, where it functions as either the high-side or low-side FET in a 3-phase inverter. Its logic-level gate enables direct drive from a 3.3 V or 5 V gate-driver IC, simplifying the inverter electronics. The 7 mΩ on-resistance limits I²R losses during high-torque motor stall currents (50-100 A peaks), while the 80 V VDS handles the back-EMF transients of BLDC motors at high RPM.
تجویز کردہ
Hot-Swap and OR-ing Switches on 24-48 V Bus
The BSZ070N08LS5ATMA1 works as a hot-swap controller's pass MOSFET on 24 V or 48 V distribution rails. Its logic-level gate threshold lets a hot-swap controller IC drive it directly, while the 80 V VDS withstands transient overvoltages during load-dump events on 24 V industrial buses. The 7 mΩ RDS(on) keeps continuous conduction loss manageable at the 10-30 A typical of server and telecom board power rails.
تجویز کردہ
Automotive 12 V / 24 V Load Switching
In automotive 12 V and 24 V body-control modules, the BSZ070N08LS5ATMA1 can serve as a high-current load switch for headlamp modules, seat heaters, or fan controllers. The 80 V VDS provides robust protection against ISO 7637-2 load-dump transients on truck 24 V systems, while the 7 mΩ RDS(on) handles continuous currents of 20-40 A with low dissipation. Designers typically validate automotive-grade OptiMOS 5 variants for full AEC-Q101 qualification rather than using the standard part.
تجویز کردہ
Solar Microinverter Primary-Side Switch
In sub-600 W solar microinverters, the BSZ070N08LS5ATMA1 can be used as the primary-side switch in a two-stage topology where the front-end DC-DC converter handles 30-40 V panel voltages. The 7 mΩ RDS(on) keeps losses modest at 100 kHz switching frequencies, and the 80 V VDS comfortably covers panel open-circuit voltages in cold conditions. The PQFN 3.3 x 3.3 mm footprint allows dense PCB layouts that fit in the small NEMA enclosures used in microinverter installations.
تجویز کردہ
Industrial Robotics BLDC Drive
The BSZ070N08LS5ATMA1 is well-suited as a low-side FET in the 3-phase inverter for industrial robotics servo drives operating from 24-48 V DC bus. The 7 mΩ RDS(on) keeps inverter conduction loss below 1% at the 20-30 A continuous phase currents typical of small-payload robot joints, while the 80 V VDS withstands regen transients during motor deceleration. Its logic-level gate allows simple bootstrap gate-driver ICs to switch the FET at the 20-50 kHz PWM frequencies typical of field-oriented-control loops.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSZ070N08LS5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC070N08LS5 | BSC052N08NS5ATMA1 | BSZ0901NSATMA1 | BSZ096N10LS5ATMA1 | ISC0802NLSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same |
| VDS max | 80 V | 80 V | 80 V | 80 V | 100 V | 80 V |
| RDS(on) max @ 10 V VGS | 7 mΩ | 7 mΩ | 5.2 mΩ | 9 mΩ | 9.6 mΩ | 8 mΩ |
| Logic-Level Gate (4.5 V drive) | Yes | Yes | No (standard 10 V gate) | No (standard 10 V gate) | Yes | Yes |
| Generation / Technology | OptiMOS 5 LS (logic-level) | OptiMOS 5 LS | OptiMOS 5 standard | OptiMOS 5 standard | OptiMOS 5 LS (100 V) | OptiMOS 5 LS |
اہم امتیازی خصوصیات
- Logic-level gate drive compatible with 4.5 V microcontrollers (بمقابلہBSC052N08NS5ATMA1)
- Lowest 7 mΩ RDS(on) in Infineon's PQFN 3.3 x 3.3 80 V logic-level family (بمقابلہBSZ0901NSATMA1)
- 80 V rating with logic-level gate, the only one in the 80 V OptiMOS 5 LS line at this footprint (بمقابلہBSZ096N10LS5ATMA1)
ڈیزائن نوٹس
Estimated: with the bottom-exposed drain pad of the PG-TSDSON-8-FL package, design at least 1 cm² of 2-oz copper on the top layer plus thermal via array (8-12 vias of 0.3 mm drill) to the inner copper plane. At continuous 30 A with VIN = 48 V and low-side RDS(on) of 7 mΩ, dissipation is about 6 W; this copper geometry keeps the junction-to-ambient thermal resistance near 50 °C/W, limiting temperature rise to ~50 °C above ambient. Avoid cutting the drain copper plane with signal traces or vias.
Estimated power dissipation in a typical 48 V-to-12 V synchronous buck converter at 20 A output with 90% efficiency: low-side FET losses are dominated by body-diode conduction during dead-time (typical 30 ns) plus I²R loss. With 7 mΩ RDS(on) and 30% duty cycle, conduction loss is about 0.5 W. Add 1-2 W for switching and gate-drive losses. The 69 W TC-rated dissipation is generous; the PCB copper area, not the package rating, is the real-world limit.
Do not exceed VGS = ±20 V. The logic-level gate threshold can be fully enhanced at 4.5 V, but driving at 10 V lowers RDS(on) by ~15% and is preferred for high-current paths. Always add a 10 kΩ gate-source pull-down resistor to prevent accidental turn-on from dv/dt coupling during high-side switching. Boot the high-side gate supply with a 100 nF ceramic bypass capacitor placed within 2 mm of the BSZ070N08LS5ATMA1 source pins.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Standard part is not AEC-Q101 qualified; automotive applications require an AEC-Q101 qualified OptiMOS 5 variant.
