IRF9530NSTRLPBF -100V P-Ch HEXFET MOSFET, 14A, D2PAK | Infineon
MPN: IRF9530NSTRLPBF ✓ فعالIRF9530NSTRLPBF جائزہ
A P-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which the majority carriers are holes. P-channel devices simplify high-side switching because the load is tied to ground and the MOSFET source sits at the supply rail, eliminating the bootstrap or charge-pump circuitry required by N-channel high-side switches. Within the broader taxonomy, a P-channel MOSFET belongs to power MOSFETs -> MOSFETs -> discrete semiconductors -> power management semiconductors. HEXFET is Infineon's planar-cell process trademark that optimizes the trade-off between RDS(on), gate charge, and avalanche ruggedness for industrial-grade switching.
Key differentiating features include a low 200 mOhm maximum on-resistance, 38.7 nC total gate charge, and -20V maximum gate-source rating. The D2PAK package has a thermal resistance of 1.5 C/W junction-to-case, allowing up to 79W of dissipation when properly mounted on a copper-spreader PCB. The -PbF suffix confirms lead-free, RoHS-compliant terminations.
Technically, the IRF9530NSTRLPBF is built on Infineon's HEXFET generation process, which uses a vertical DMOS structure with a planar gate. The P-channel polarity is achieved by an n-well body with p+ source/drain diffusions. This gives a positive threshold voltage (VGS(th) typically -2V to -4V) and predictable body-diode behavior for synchronous-rectifier and ORing applications. The device is avalanche-rated and qualified to industrial standards.
Typical applications include high-side load switches in industrial 48V systems, P-channel synchronous rectifiers in buck converters, motor-driver H-bridges, polarity-protection circuits, and battery-disconnect switches in -48V telecom and -60V solar systems.
When designing with this device, always confirm that the PCB copper area is sufficient to keep the junction temperature below 150C at worst-case load. Use a gate-drive resistor of 10-100 ohm to limit ringing, and ensure VGS never exceeds +/-20V including transients.
This page synthesizes Infineon datasheet parameters, current distributor pricing, drop-in equivalents in the same D2PAK footprint, and practical design guidance not found in the basic datasheet.
کے لیے ڈراپ اِن متبادل IRF9530NSTRLPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF9530NSTRLPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Mounting Type, On-Resistance RDS(on) max @ VGS=-10V, Technology, Total Gate Charge (Qg).
IRF9530NPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF9540NSTRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF9530STRLPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF9530NSPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
VBL2102M
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF9530NSTRLPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25C | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm |
| Total Gate Charge (Qg) | 38.7 nC (typ) |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Power Dissition (PD) at TC=25C | 79 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (TJ) |
| پیکیج | D2PAK (TO-263-3) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) |
| Technology | HEXFET (Planar DMOS) |
IRF9530NSTRLPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input (drive between 0V and -10V relative to Source) |
| پن 2 | Drain — Drain terminal; internally connected to the metal tab/thermal pad |
| پن 3 | Source — Source terminal (reference for gate drive; tied to the -V rail in high-side switch topology) |
| پن Tab | Drain — Metal mounting tab; electrically tied to Drain (Pin 2) and serves as the thermal pad to the PCB |
محفوظ آپریٹنگ ایریا (DC, TJ=25C, VGS=-10V unless noted)
عام استعمالات
IRF9530NSTRLPBF کے لیے موزوں ہے 6 ایپلیکیشنs: -48V Telecom High-Side Load Switch, P-Channel Synchronous Rectifier in Buck Converter, H-Bridge Motor Driver (P-Channel High Side), Battery Polarity / Reverse-Protection Switch, Solar PV Bypass / Blocking Diode Replacement, Industrial Solenoid / Relay Driver.
-48V Telecom High-Side Load Switch
The IRF9530NSTRLPBF is a strong fit for -48V telecom high-side load switching because its -100V VDS rating provides 100% headroom over the -48V rail, eliminating avalanche risk during transient spikes on the bus. Its P-channel polarity lets the load sit at ground while the MOSFET source rides at -48V, removing the bootstrap or charge-pump circuit required by an N-channel high-side switch. Placed between the -48V bus and the downstream DC-DC converter with a gate resistor of 10-100 ohm, the part adds <1 mOhm of body-diode drop at full load. Trade-off: conduction loss is 39W at -14A and 200 mOhm, so for higher current rails consider the IRF9540NSTRLPBF (117 mOhm, -23A) instead.
تجویز کردہ
P-Channel Synchronous Rectifier in Buck Converter
In a buck converter the IRF9530NSTRLPBF can serve as the P-channel synchronous rectifier (low-side switch driven from a level-shifted gate), where its 38.7 nC Qg keeps gate-drive loss under 40 mW even at 100 kHz. The 200 mOhm RDS(on) is acceptable for sub-5A output rails such as auxiliary 5V/12V converters. Compared to using the N-channel IRF540N as the low-side switch, the P-channel topology halves the driver complexity because the source is referenced to ground. Caveat: at heavy load (>10A) conduction loss becomes significant; for those rails the IRF9540NSTRLPBF at 117 mOhm is the same-footprint upgrade.
تجویز کردہ
H-Bridge Motor Driver (P-Channel High Side)
The IRF9530NSTRLPBF is widely used as the high-side switch in brushed-DC H-bridge motor drives up to 14A continuous, where its P-channel polarity simplifies the gate-drive path and eliminates the bootstrap diode. With both high-side and low-side FETs driven from a single supply, the H-bridge can be controlled by a low-cost half-bridge driver or a micro-stepping pre-driver. The HEXFET process gives robust body-diode recovery for inductive kick handling, which is critical when switching motor windings. Pair with N-channel IRF540N (TO-220) or IRF3205 (TO-220) for the low-side; both share the same VDS/ID class and trade at comparable pricing.
تجویز کردہ
Battery Polarity / Reverse-Protection Switch
A single IRF9530NSTRLPBF placed in series with a -24V to -48V battery stack provides solid-state reverse-polarity protection with only 200 mOhm of forward drop, replacing a Schottky diode and saving up to 7W of dissipation at -14A. The MOSFET body diode conducts momentarily during plug-in, but the gate is then pulled high (or low, depending on topology) to block reverse current. The -100V VDS rating ensures the part survives load-dump transients common on automotive and industrial battery rails. This topology is widely used in -48V distributed-power systems, forklift batteries, and solar PV disconnect boxes.
تجویز کردہ
Solar PV Bypass / Blocking Diode Replacement
In a photovoltaic string the IRF9530NSTRLPBF can replace the conventional Schottky bypass diode on each panel, reducing forward voltage drop from 0.5V to under 0.1V and recovering up to 1% of array yield per panel. Its -100V rating comfortably covers open-circuit voltages of 60V/72-cell modules, and the HEXFET process tolerates the sustained DC stress of bypass operation. For module-level power electronics (MLPE) such as optimizers, the part's small D2PAK footprint enables dense layouts. Ensure the gate is driven low (VGS=0) to keep the FET off during normal operation, and high (-10V) to bypass a faulted panel.
تجویز کردہ
Industrial Solenoid / Relay Driver
The IRF9530NSTRLPBF is well-suited to driving 24V/48V industrial solenoids, valves, and relays where the inductive load demands a TVS clamp or flyback path. With 14A continuous and 79W power dissipation, the D2PAK package can switch most hydraulic and pneumatic solenoids on 24V industrial control systems. The P-channel topology lets the solenoid return directly to the +24V rail while the FET pulls the high side to ground. Add a 1N4007 free-wheeling diode across the coil and a gate resistor of 47 ohm to limit dV/dt; the part's +/-20V VGS rating allows wide transient margin.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF9530NSTRLPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF9530NPBF | IRF9540NSTRLPBF | IRF9530STRLPBF | IRF9530NSPBF | VBL2102M |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Vishay Siliconix | Infineon | VBsemi |
| Package | D2PAK (TO-263-3) | TO-220 (through-hole, not D2PAK) | D2PAK (TO-263-3) - same | TO-263 (D2PAK) - same | D2PAK (TO-263-3) - same | TO-263 (D2PAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS (V) | -100 | -100 | -100 | -100 | -100 | -100 |
| Lead-Free / RoHS | Yes (PbF suffix) | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (USD at qty=1000) | 0.65 | 0.55 (TO-220, tube) | 0.95 | 0.85 | 0.68 | 0.45 (distributor-dependent) |
اہم امتیازی خصوصیات
- Industry-standard -100V / -14A P-channel HEXFET with broad second-source support (بمقابلہIRF9530STRLPBF (Vishay))
- Lower on-resistance than the original IR generation while keeping the same footprint (بمقابلہIRF9530 (original, no -N suffix))
- Lower price point at qty>=1000 compared to the higher-current IRF9540NSTRLPBF sibling (بمقابلہIRF9540NSTRLPBF)
ڈیزائن نوٹس
At -14A continuous load with a typical -48V to -5V switching topology, the IRF9530NSTRLPBF dissipates roughly I^2*R = 14*14*0.2 = 39W. The D2PAK package has theta_JC of 1.5 C/W, so junction rise above case is 39*1.5 = 58.5C. With case held at 100C, the junction reaches 158.5C - above the 150C rating. Estimated using VDS=14A, RDS(on)=0.2 ohm, no heatsink. Mount the tab on a minimum 1 square inch of 2 oz copper pour to keep theta_JA near 40 C/W and TJ below 125C in 70C ambient.
The D2PAK drain tab is electrically hot; isolate the PCB copper pad with a solder mask-defined window or thermal vias under a star-ground configuration. Use a 47-100 ohm gate resistor to damp VGS ringing; add a 10 kohm pull-down on the gate to guarantee the FET stays off if the gate driver is tri-stated during power-up. Keep the gate trace short (<10mm) and route it away from the drain switching node to minimize Cgd-induced Miller turn-on. Use at least 2 oz copper on the drain pad for sustained current >10A.
P-channel MOSFETs in high-side switch topologies require the gate voltage to be referenced to the source, which swings with the supply rail. A -48V source means the gate must be driven to -58V to achieve VGS=-10V - most logic-level drivers cannot reach this. Use a gate driver with high-voltage level shift such as the FAN7392, or a bootstrap-style isolated driver. Also beware that VGS must never exceed +/-20V including ringing; a 20V Zener from gate to source is a standard protection method. Do not use the part as a low-side switch without verifying that the source can swing close to ground during saturation.
تعمیل کی معلومات
PbF suffix confirms lead-free RoHS compliance. REACH-compliant per Infineon declaration. Not AEC-Q100 qualified - this is an industrial-grade part, not automotive. Halogen-free status not stated in the provided data.
