IRLB3813PBF - 30V, 260A StrongIRFET N-MOSFET | Infineon | TO-220AB
MPN: IRLB3813PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.89 | $189.00 |
| 500 | $1.65 | $825.00 |
| 1,000 | $1.42 | $1,420.00 |
Drop-in alternatives for IRLB3813PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLB3813PBF
✅ Drop-In✓ In Stock
$1.42 / Unit
View Datasheet →IRF1405PBF
✅ Drop-In✓ In Stock
$1.42 / Unit
View Datasheet →IRFR4615TRLPBF
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →IRLB3813PBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | StrongIRFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc=25C | 260 A |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) |
| Power Dissipation (PD) at Tc=25C | 230 W |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | JEDEC (industrial market) |
| RoHS Status | Compliant (Pb-free suffix PBF) |
| Lead-Free | Yes |
IRLB3813PBF Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input (logic-level, fully enhanced at VGS=4.5V) |
| Pin 2 | Drain — MOSFET drain; also electrically connected to the metal tab/back of the package |
| Pin 3 | Source — MOSFET source; reference for gate drive and load return |
Safe Operating Area (DC, Tj=175C, VGS=10V)
Typical Applications
IRLB3813PBF is suitable for 6 applications: UPS and Inverter Bridge Switch, 12 V / 24 V Battery Protection (BMS Discharge FET), High-Frequency Isolated DC-DC Converter (Synchronous Rectifier), Hot-Swap / E-Fuse for 12 V and 24 V Distribution, Power Tool Motor Drive (Low-Side Switch), Industrial Solenoid and Relay Replacement.
UPS and Inverter Bridge Switch
The IRLB3813PBF fits UPS and inverter full-bridge legs because of its 30 V VDS rating (well above a 24 V bus peak) and 260 A continuous drain current at Tc=25C, allowing it to handle 5-10 kVA inverter outputs with adequate margin. The 1.95 mOhm RDS(on) minimises conduction loss in 50/60 Hz rectified paths, while logic-level gate drive lets a simple bootstrap gate driver (e.g., IR2114SSPBF) control it directly from 5 V logic. Compared to an IGBT at this voltage/current, the IRLB3813PBF has lower conduction loss but lacks the IGBT's square SOA - so it is best used on the low-side or in totem-pole pairs where VDS stays under 30 V.
Recommended
12 V / 24 V Battery Protection (BMS Discharge FET)
The IRLB3813PBF is well-matched to battery management system discharge paths because its 30 V VDS rating comfortably covers a fully-charged 24 V Li-ion pack (~29.4 V), and its 1.95 mOhm RDS(on) keeps voltage drop under 100 mV at 50 A continuous discharge. Logic-level gate drive (full enhancement at 4.5 V) lets a 3.3 V or 5 V BMS microcontroller drive it through a small gate resistor. Its avalanche rating also handles the inductive kick from motor loads connected to the pack. Engineers should size the heatsink for steady-state discharge (P = I^2 * R = 50^2 * 0.002 = 5 W) and add a 10 kOhm gate pull-down for fail-safe OFF state.
Recommended
High-Frequency Isolated DC-DC Converter (Synchronous Rectifier)
The IRLB3813PBF serves as a synchronous rectifier on the secondary side of 12 V or 24 V-input isolated DC-DC converters because its 1.95 mOhm RDS(on) at VGS=4.5V outperforms Schottky diodes above 30 A load, eliminating reverse-recovery loss and improving efficiency by 2-4 percentage points. The 57 nC Qg keeps gate-drive loss manageable at 100-200 kHz switching frequency. Its planar StrongIRFET cell has a robust body diode, simplifying dead-time control. The TO-220AB package allows through-hole mounting on the secondary-side copper pour for thermal spreading, and matches well with a primary-side switch such as the IPB025N10N3GATMA1 for a complete 48 V to 12 V telecom砖 converter.
Recommended
Hot-Swap / E-Fuse for 12 V and 24 V Distribution
The IRLB3813PBF fits 12 V and 24 V hot-swap and electronic fuse paths because its 30 V VDS rating accommodates the full bus voltage plus transient ringing, and its 260 A ID capability supports high-inrush capacitive loads up to 10 mF on the backplane. Logic-level gate drive enables inrush control via a microcontroller PWM ramp, while the 1.95 mOhm RDS(on) keeps steady-state drop below 50 mV at 25 A. Its avalanche rating absorbs the energy from a load short during current-limit foldback. Pair with a current-sense amplifier (e.g., INA180) and gate resistor to build a complete e-fuse; the TO-220AB package gives a low-resistance tab for heatsink mounting during continuous high-current events.
Recommended
Power Tool Motor Drive (Low-Side Switch)
The IRLB3813PBF is used as a low-side switch in cordless power tool motor drives because its 30 V VDS rating suits 18 V and 20 V battery packs with margin, and its 1.95 mOhm RDS(on) at logic-level gate drive (4.5 V) lets it be controlled directly from a 5 V gate-driver IC without charge-pump complexity. The 260 A peak current handles motor stall transients, while the 230 W power dissipation rating supports continuous operation with a moderate heatsink. Its robust body diode supports PWM braking at 20-30 kHz. Compared to Darlington or IGBT alternatives, the StrongIRFET has faster switching and lower conduction loss, improving runtime by 5-10% on the same battery.
Recommended
Industrial Solenoid and Relay Replacement
The IRLB3813PBF replaces mechanical relays in industrial solenoid drivers because of its 260 A peak rating, 1.95 mOhm on-resistance, and logic-level gate drive that interfaces directly with 5 V PLC outputs or microcontroller GPIO. Unlike mechanical relays, it has no moving contacts, enabling silent operation, faster switching (<1 us vs 10 ms), and bounce-free PWM control for proportional solenoid actuation. The TO-220AB through-hole package supports rugged mounting in industrial control cabinets. Pair with a TVS diode (e.g., SMBJ5.0A) across the solenoid coil to clamp inductive flyback within the 30 V VDS rating. Useful in 24 V hydraulic valve control and factory automation where mechanical relay寿命 (10^5 cycles) is a limiting factor.
Recommended
Recommended Products Summary
Engineering reference data for IRLB3813PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF1405PBF | IRFR4615TRLPBF |
|---|---|---|---|
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) - same | TO-252 / DPAK (SMD) - different |
| Brand | Infineon | Infineon | Infineon |
| VDS max | 30 V | 40 V (+33%) | 100 V (+233%) |
| ID max (Tc=25C) | 260 A | 169 A (-35%) | 37 A (-86%) |
| RDS(on) max @ VGS=10V | 1.95 mOhm | 5.3 mOhm (+172%) | 30 mOhm (+1438%) |
| Total Gate Charge Qg | 57 nC (typ) | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc=25C) | 230 W | 330 W | 140 W |
| Gate Drive Level | Logic-level (4.5 V VGS full enhancement) | Standard (10 V VGS) | Standard (10 V VGS) |
| Technology | StrongIRFET planar HEXFET | HEXFET planar | HEXFET planar |
Key Differentiators
- Lowest on-resistance at logic-level gate drive in TO-220AB (vs IRF1405PBF)
- 260 A continuous current rating - 3x the IRFR4615TRLPBF DPAK class (vs IRFR4615TRLPBF)
- Logic-level gate drive eliminates charge-pump circuitry (vs IRF1405PBF)
Design Notes
Estimated: at continuous 50 A load, conduction loss is P = I^2 * R = 50^2 * 0.00195 = 4.875 W. With TO-220AB junction-to-ambient thermal resistance typically 62 C/W without heatsink, junction temperature rise above 25C ambient is 4.875 * 62 = 302 C - far exceeding the 175 C max. A heatsink with thermal resistance < 1 C/W (e.g., 50 mm extruded aluminium) is mandatory for sustained >30 A operation. Forced-air cooling (100 LFM) cuts the required heatsink size by roughly 50%.
For through-hole TO-220AB mounting, use a 6 mm or larger pad with 2 oz copper pour connected to the Source pin (pin 3) to spread heat and reduce source-inductance-induced ringing. Mount the tab to a heatsink using a silicone insulator pad (e.g., Bergquist Sil-Pad) and thermal compound if the heatsink is grounded. Never rely on the drain tab for electrical connection without isolating it, as Pin 2 (Drain) and the tab are internally bonded.
Place a 10 kOhm gate-to-source resistor directly across the gate and source pins (physically close to the package) to prevent dv/dt-induced Miller turn-on in bridge topologies. Exceeding VGS = +/-20 V (the absolute maximum gate voltage) destroys the gate oxide - add a 12 V Zener (e.g., BZX84C12L) from gate to source if the gate driver can overshoot. Do not use the IRLB3813PBF on a 48 V bus; the 30 V VDS rating leaves no transient margin.
Keep the gate-drive loop (gate-driver output -> gate resistor -> gate pin -> source pin -> gate-driver ground return) area under 1 cm^2 to minimise parasitic inductance, which otherwise causes gate-voltage ringing and potential shoot-through in half-bridge configurations. Source inductance from the package source pin back to the power-ground plane is the dominant cause of switching loss and EMI - use a Kelvin-source connection (pin 3 directly to the gate-driver ground) when available in the layout.
Compliance Information
PBF suffix denotes Pb-free / RoHS-compliant per Infineon part-numbering convention. Not AEC-Q100 qualified - the part targets industrial market per the datasheet qualification statement. For automotive applications, choose an AEC-Q100-qualified OptiMOS or StrongIRFET variant instead.
