K9LCG08U1M - 64Gbit MLC NAND Flash | Samsung | SSD Storage
MPN: K9LCG08U1M ✓ فعالK9LCG08U1M جائزہ
NAND flash is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM in speed but offers far higher density and lower cost per bit, making it the dominant technology for solid-state drives, eMMC storage, USB drives, memory cards, and embedded file systems. Samsung is the world's leading NAND flash manufacturer, and the K9LCG08U1M belongs to its high-density MLC NAND family targeting large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility, as described in supplier documentation.
Key characteristics include the 64 Gbit (8 GB) per-die MLC organization, an asynchronous NAND interface with standard command/data/address multiplexed I/O, and a BGA package suited to compact board designs. MLC technology stores two bits per cell, doubling density versus SLC at the cost of higher program/erase endurance requirements being placed on the system controller, which must implement ECC, wear leveling, and bad-block management.
Architecturally, the device uses Samsung's MLC cell array with page-based read and program operations and block-based erase, accessed through the standard NAND command set. Data integrity depends on the host controller applying error-correcting code appropriate to MLC bit-error rates, typically BCH or LDPC schemes implemented in the companion controller.
Typical applications include solid-state storage files, embedded industrial storage modules, set-top boxes, and portable devices requiring high-density non-volatile memory. Designers should verify the full speed-grade suffix (LCB0/LCB00) when sourcing, as voltage and timing parameters vary by ordering code.
A key design consideration is that raw NAND requires a controller: the K9LCG08U1M cannot be used standalone, and MLC endurance demands robust ECC and wear-leveling firmware.
This page synthesizes distributor availability data, ordering-code variants, and drop-in family alternatives not consolidated in any single datasheet source.
کے لیے ڈراپ اِن متبادل K9LCG08U1M — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں K9LCG08U1M (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Organization, Cell Type, Memory Type, Density.
K9HCG08U1M
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K9XXG08U0M
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K9XXG08UXM
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K9HQGY8S5M
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K9F2808Q0B
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K9LCG08U1M تفصیلات
| میموری ٹائپ | NAND Flash, MLC |
| Density | 64 Gbit (8 GB) |
| تنظیم | x8 I/O |
| انٹرفیس | Asynchronous multiplexed NAND I/O |
| Cell Type | MLC (2 bits per cell) |
| پیکیج | BGA |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |
K9LCG08U1M bga پن کنفیگریشن گائیڈ
K9LCG08U1M (bga پیکیج) کے لیے پن کنفیگریشن۔ پن نمبرنگ، فنکشنز اور کنکشن ڈایاگرامز مینوفیکچرر کے ڈیٹا شیٹ میں بیان کیے گئے ہیں۔ درست فٹ پرنٹ اور سولڈرنگ رہنما ہدایات کے لیے اسی سے رجوع کریں۔
کے لیے تفصیلی پن آؤٹ ڈیٹا دستیاب نہیں K9LCG08U1M.
رجوع کریں ڈیٹا شیٹ مکمل پن کنفیگریشن کے لیے۔
عام استعمالات
K9LCG08U1M کے لیے موزوں ہے 6 ایپلیکیشنs: Solid State File Storage, Industrial Embedded Storage, Set-Top Boxes and Consumer Electronics, Portable and Battery-Powered Devices, Storage Module and eMMC Subsystem Design, Data Logging and Event Recorders.
Solid State File Storage
The K9LCG08U1M's 64 Gbit MLC density in a compact BGA makes it a fit for solid state file storage systems where large non-volatile capacity per package is the priority. Supplier documentation explicitly positions it as an optimum solution for such applications. In a typical SSD or storage-module architecture, multiple NAND packages connect to a controller over the multiplexed NAND bus, with the controller handling BCH or LDPC ECC, interleaved multi-die operation, and wear leveling to manage MLC endurance. Because MLC stores two bits per cell, the cost per gigabyte is roughly half that of SLC, but the controller must budget for higher bit-error rates and longer program times. Designers should parallelize several packages to increase effective bandwidth beyond a single die's read throughput.
تجویز کردہ
Industrial Embedded Storage
Industrial controllers, gateways, and data loggers need reliable non-volatile code and data storage, and the K9LCG08U1M provides 8 GB of MLC NAND in a surface-mount BGA suitable for compact industrial boards. In these designs, the NAND typically stores the file system, firmware images, and logging data behind a controller implementing power-fail protection, bad-block remapping, and wear leveling. The MLC cell type keeps cost per bit low, which matters in cost-sensitive industrial volumes, but designers must verify the ordering code's temperature range in the Samsung datasheet and select a wide-temperature suffix for harsh environments. Decoupling capacitors on the NAND supply rail and clean power sequencing during brownout events are essential to prevent data corruption.
تجویز کردہ
Set-Top Boxes and Consumer Electronics
Set-top boxes, smart TVs, and networked consumer devices use high-density NAND like the K9LCG08U1M for channel databases, application storage, and DVR buffering. The 64 Gbit MLC device offers the capacity these platforms need at consumer price points, and its standard asynchronous NAND interface connects directly to mainstream SoCs with built-in NAND controllers and hardware ECC. The controller's LDPC or BCH engine handles MLC error rates, while firmware wear leveling sustains the write endurance demanded by DVR-style recording workloads. The BGA package supports the compact two-layer to four-layer PCB constructions typical of consumer hardware. Designers should confirm the speed-grade suffix timing matches the SoC NAND controller's supported interface timing modes before layout.
تجویز کردہ
Portable and Battery-Powered Devices
Portable applications requiring non-volatility - handheld terminals, test instruments, and mobile accessories - benefit from the K9LCG08U1M's combination of high density and low per-bit cost. Supplier listings describe the device as an optimum solution for portable applications requiring non-volatility. In battery-powered designs, the NAND's standby current draw is negligible relative to the system, and the asynchronous interface avoids the power cost of a high-speed memory bus. The BGA footprint keeps board area small for thin form factors. Because MLC program operations take longer than SLC, firmware should buffer writes in RAM and batch them to reduce erase cycles, directly extending battery-adjacent storage lifetime and improving perceived responsiveness of the device.
تجویز کردہ
Storage Module and eMMC Subsystem Design
Designers building storage modules - raw-NAND cards, industrial SD-like modules, or custom eMMC-class subsystems - can build around multiple K9LCG08U1M packages. Density denoted by Samsung's K9 nomenclature allows parallel dies for capacity aggregation: a controller exposing an SD, eMMC, or SATA front end manages four to eight NAND packages with interleaving to multiply bandwidth. The MLC architecture's endurance is handled through dynamic and static wear leveling plus over-provisioning, typically 7% or more of capacity. The identical command set across Samsung's K9 family lets one firmware image support multiple bill-of-material densities, simplifying product SKUs. Verify ball-map compatibility when mixing K9LCG08U1M with other family parts on the same PCB footprint.
تجویز کردہ
Data Logging and Event Recorders
Event recorders, black-box loggers, and telemetry systems require storage that survives power loss and years of cyclic writing. The K9LCG08U1M's 8 GB MLC array supports extensive logging histories, and its non-volatile cells retain data without power indefinitely. A logging controller writes fixed-record blocks into NAND pages, using bad-block tables and wear leveling to spread erase cycles evenly; at moderate write rates this extends service life well beyond typical mission intervals. The multiplexed NAND interface needs only modest controller GPIO resources, suiting cost-sensitive recorder hardware. Because sudden power removal can corrupt an in-progress program operation, firmware must implement write-verify and journaling so that the last valid record is always recoverable.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا K9LCG08U1M — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | K9HCG08U1M | K9XXG08U0M | K9XXG08UXM | K9HQGY8S5M | K9F2808Q0B |
|---|---|---|---|---|---|---|
| Package | BGA | BGA | BGA | BGA | BGA | BGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Target Application | Solid state file storage, portable non-volatile storage | High-density solid state storage | Embedded NAND storage | Embedded NAND storage | High-density NAND generation | Legacy code/data storage |
| Lifecycle Status | Active (independent distributor stock) | Active | Active | Active | Active | Legacy |
اہم امتیازی خصوصیات
- 64 Gbit MLC density balances cost and capacity (بمقابلہK9F2808Q0B)
- Same-family migration path within Samsung K9 catalog (بمقابلہK9HCG08U1M)
- MLC cost structure versus higher-density newer generations (بمقابلہK9HQGY8S5M)
ڈیزائن نوٹس
Never operate the K9LCG08U1M without ECC. As MLC NAND, raw bit-error rates are substantially higher than SLC, and the Samsung datasheet assumes controller-managed error correction (BCH or LDPC) sized for the device's page size. Additionally, always build to the complete ordering code (LCB0, LCB00, or LCB) rather than the bare base MPN, because timing and voltage grades are encoded in the suffix. Ordering on the base MPN alone risks receiving a speed grade incompatible with your controller timing configuration.
The BGA package requires reflow soldering - hand soldering is not feasible. Follow the Samsung datasheet reflow profile limits and inspect solder joints with X-ray or AOI, since NAND BGAs hide voids beneath the die area. Place 100 nF ceramic decoupling capacitors within 2-3 mm of each supply ball, plus bulk 10 uF capacitance per package. Keep the multiplexed command/data/address bus traces length-matched where multiple NAND packages share the bus, and add series termination on long I/O lines to control ringing at fast read cycles.
Implement power-fail protection in the storage firmware: an interrupted MLC program operation can corrupt the target page, so design the system to detect brownout (via a supply supervisor), flush controller RAM buffers, and mark the interrupted block for later verification and remapping. Estimated: NAND program current is modest, but simultaneous program across multiple stacked dies can create transient load steps - size the bulk capacitance for the aggregate inrush of all dies programming in interleaved mode.
On shared NAND buses with multiple K9-family packages, ensure only the selected device drives I/O during read cycles; contention from an un-tri-stated device corrupts data. Verify that pull-up resistors on R/B (ready/busy) lines are sized so rise times meet your controller's timing budget when several devices share one R/B line in stacked configurations.
تعمیل کی معلومات
Compliance status not stated in the provided web data; obtain declarations from Samsung or the stocking distributor.
