BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC005N03LS5IATMA1 ✓ Hoạt độngBSC005N03LS5IATMA1 Tóm tắt
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the discrete semiconductor family, the building blocks of all switched-mode power conversion - buck, boost, half-bridge, and full-bridge topologies all rely on one or more MOSFETs as synchronous rectifiers or low-side switches. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, optimized for the lowest figure-of-merit (RDS(on) × Qg) in its voltage class.
Key features of the BSC005N03LS5IATMA1 include its 0.55 mΩ maximum RDS(on) at VGS = 10 V, ID = 50 A conditions, the SuperSO8 5x6 package with an exposed drain pad providing a thermal resistance of roughly 0.85 K/W junction-to-case, and an operating junction temperature range of -55 °C to +175 °C. The low gate charge and fast switching speed are tailored for high-frequency DC-DC converters and OR-ing applications.
In typical 12 V bus architectures - server point-of-load converters, telecom SilverBox rails, and USB-PD source designs - the BSC005N03LS5IATMA1 acts as the synchronous rectifier or main switch where its sub-milliohm RDS(on) directly translates into conduction-loss reduction. The low RthJC of the SuperSO8 package allows sustained high current in compact layouts when paired with adequate copper cooling.
Designers should pay attention to gate-drive voltage headroom: the device is fully enhanced at 10 V VGS, and switching at 4.5 V VGS will significantly raise RDS(on) and conduction losses. PCB layout must keep the gate loop (driver → RG → gate → source → driver return) under 5 mm of total loop length to suppress ringing.
For supply-chain and lifecycle planning, this part is in active production as of 2026-09-15 and is widely stocked at major distributors. RoHS compliance is confirmed by the LCSC listing.
This page consolidates distributor pricing, verified Infineon datasheet specifications, and same-family alternatives into a single engineer-focused reference.
Bộ thay thế dễ dàng lắp đặt cho BSC005N03LS5IATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC005N03LS5IATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
BSC019N04LSGATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC014NE2LSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC12DN20NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7L033ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC50N04S5L5R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC005N03LS5IATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) at Ta | 42 A |
| Continuous Drain Current (ID) at Tc | 433 A |
| On-Resistance RDS(on) max | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 188 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8 FL (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Polarity | N-Channel |
| Trạng thái RoHS | Compliant (per LCSC listing) |
Cấu hình chân BSC005N03LS5IATMA1
| Chân 1 | Source — Source terminal (low-side connection) |
| Chân 2 | Source — Source terminal (low-side connection) |
| Chân 3 | Source — Source terminal (low-side connection) |
| Chân 4 | Gate — Gate drive input (drive to 10 V for full enhancement) |
| Chân 5 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Chân 6 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Chân 7 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Chân 8 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
Khu vực hoạt động an toàn - DC
Ứng dụng tiêu biểu
BSC005N03LS5IATMA1 phù hợp cho 6 Áp dụngs: 12 V Synchronous Rectification, OR-ing FET for Redundant Power, USB-PD Source High-Current Switch, Hot-Swap / E-Fuse for 12 V Distribution, Battery Pack Protection (12-24 V Li-ion), High-Current LED Driver Switch.
12 V Synchronous Rectification
The BSC005N03LS5IATMA1 is ideally suited as the low-side synchronous rectifier in 12 V buck converters driving high-current CPU/GPU core rails. Its 0.55 mΩ RDS(on) at VGS = 10 V directly translates to conduction losses under 0.6 W at 30 A continuous - well within the 3 W TA dissipation envelope. The exposed drain pad of the SuperSO8 package provides a thermal resistance around 0.85 K/W junction-to-case, enabling fanless operation at full load when paired with 1 oz copper pour. The Infineon datasheet recommends this part as a direct replacement for older 30 V parts in 12 V SilverBox and VRM designs, with measurable efficiency gains above 50 A load.
Được đề xuất
OR-ing FET for Redundant Power
In N+1 redundant 12 V power architectures (server PSUs, telecom shelves), the BSC005N03LS5IATMA1 serves as the OR-ing MOSFET that isolates a failed supply from the live bus. Its 0.55 mΩ RDS(on) keeps steady-state voltage drop below 27 mV at 50 A - acceptable for most 12 V distribution. The 30 V VDS rating provides comfortable transient margin during input switchover events. Designers typically add a TL431-based gate drive that pulls VGS to 10 V once the input source is validated, and a 10 kΩ pull-down resistor to keep the FET off during hot insertion. Same PG-TDSON-8 FL footprint enables drop-in upgrade from older 1 mΩ OR-ing designs.
Được đề xuất
USB-PD Source High-Current Switch
USB Power Delivery 3.1 EPR source designs require a high-current switch that can carry 5 A continuous (28 V nominal) or up to 36 V peak. The BSC005N03LS5IATMA1's 30 V VDS rating covers legacy 20 V PD contracts and 24 V extended contracts with adequate margin. Its 433 A pulsed rating (at TC) accommodates the inrush of large bulk capacitors when a sink negotiates a new voltage. While the 0.55 mΩ RDS(on) keeps full-load drop to <100 mV at 5 A, designers should monitor junction temperature carefully at 28 V × 5 A = 140 W worst-case dissipation. The Infineon datasheet recommends VGS = 10 V drive for full enhancement.
Được đề xuất
Hot-Swap / E-Fuse for 12 V Distribution
The BSC005N03LS5IATMA1 can replace traditional e-fuse ICs in cost-sensitive 12 V hot-swap designs, where a controller IC drives the gate to regulate inrush current. With 0.55 mΩ RDS(on), the part adds only 27 mV drop at 50 A - comparable to the best dedicated hot-swap controllers. The exposed drain pad of the PG-TDSON-8 FL package spreads heat effectively, allowing sustained 30 A operation with only 1 cm² of top-side copper. The 30 V VDS rating provides margin for 13.8 V battery transients in telecom or industrial applications. A simple TL431 + BJT driver circuit can replicate the basic e-fuse function at lower BOM cost.
Được đề xuất
Battery Pack Protection (12-24 V Li-ion)
The BSC005N03LS5IATMA1 serves as the main disconnect MOSFET in 12 V to 24 V Li-ion battery packs for e-bikes, light EVs, and portable industrial equipment. Its 433 A pulsed rating handles brief motor-start transients without tripping protection, while the 0.55 mΩ RDS(on) minimizes runtime loss across the FET. The 30 V VDS comfortably exceeds 24 V pack voltages (21 V max charge + transients). The PG-TDSON-8 FL package allows direct PCB-mount integration, and the Infineon datasheet confirms operation across -55 °C to +175 °C - covering all automotive and industrial temperature profiles. A back-to-back configuration of two FETs handles bidirectional disconnect.
Được đề xuất
High-Current LED Driver Switch
Architectural and stage lighting LED drivers operating from 24 V or 48 V buses can use the BSC005N03LS5IATMA1 as the main buck switch for high-current (>10 A) LED strings. While its 30 V VDS limits it to 24 V nominal rails, the 0.55 mΩ RDS(on) and 433 A pulsed rating make it suitable for high-brightness stage lights where each string draws 20 A or more. The OptiMOS 5 technology's fast switching allows PWM dimming above 20 kHz without audible noise. The exposed pad simplifies heatsinking on metal-core PCBs commonly used in LED fixtures. Same PG-TDSON-8 FL footprint enables drop-in upgrades to higher-current LED designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC005N03LS5IATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC019N04LSGATMA1 | BSC014NE2LSIATMA1 | ISC015N06NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 30 V | 40 V | 25 V | 60 V | 40 V |
| RDS(on) max | 0.55 mΩ @ VGS=10V | 1.9 mΩ | 1.4 mΩ | 1.5 mΩ | 1.1 mΩ |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 |
Bảo phân biệt quan trọng
- Sub-milliohm RDS(on) in a standard Power-SO8 footprint (vsBSC019N04LSGATMA1)
- Higher VDS headroom in identical package (vsBSC014NE2LSIATMA1)
- More recent technology generation (vsISC011N04NM7VATMA1)
Ghi chú thiết kế
Estimated: at 12 V input, full-load buck operation with the BSC005N03LS5IATMA1 as the low-side synchronous FET carrying 30 A average, conduction loss is roughly P = I² × RDS(on) × (1-D) ≈ 30² × 0.55 mΩ × 0.5 = 0.25 W. Switching losses depend on switching frequency and gate charge but typically add 0.1-0.3 W at 300 kHz. The PG-TDSON-8 FL exposed pad provides RthJC ≈ 0.85 K/W, so junction temperature rise stays well below 5 °C above case at this load. Design for at least 1 cm² of top-side copper pour to keep the case-to-ambient thermal resistance below 50 K/W.
Critical: keep the high-side gate-drive loop (driver output → gate resistor → FET gate → source sense → driver ground return) physically small - under 5 mm total loop length - to minimize parasitic inductance. The BSC005N03LS5IATMA1's low gate charge means the device can respond to sub-10 nH loop inductance, but excessive ringing may push VGS below the threshold or above the 20 V absolute maximum. Place the gate resistor (typically 10-22 Ω) immediately adjacent to the gate pin. Use a kelvin source connection where the source-sense bond-wire is kept separate from the power source path.
Critical: do not operate the BSC005N03LS5IATMA1 below VGS = 4.5 V - the RDS(on) rises sharply and conduction loss can exceed 2 W at 30 A, far above the package dissipation rating. Always drive the gate to at least 8 V (10 V nominal) for full enhancement. Also note that VGS(th) = 2 V is the typical value at 10 mA, but production parts can range from 1.2 V to 2.8 V - design the gate drive to source at least 6 V even for low-threshold parts. Finally, ensure the drain-source body diode reverse recovery is acceptable for your topology - synchronous FETs in CCM buck converters see hard commutation events.
Recommended: use the exposed drain pad of the PG-TDSON-8 FL package as the primary heat dissipation path. Solder paste stencil apertures should cover at least 80 % of the pad area to ensure proper thermal contact. For high-current applications (>50 A sustained), stitch thermal vias directly under the pad - typically a 4×4 array of 0.3 mm vias filled with copper - to conduct heat to internal copper planes. The Infineon application note AN_201611_PL11_002 covers SuperSO8 thermal layout best practices and is recommended reading.
Thông tin tuân thủ
RoHS compliance confirmed by LCSC listing. AEC-Q100 qualification status not stated in provided data - assumed not qualified (industrial/consumer grade). REACH, halogen-free, and conflict-mineral status not present in verified data.
