ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon
MPN: ISC240P06LMATMA1 ✓ Hoạt độngISC240P06LMATMA1 Tóm tắt
A P-channel MOSFET is a minority-carrier enhancement-mode field-effect transistor in which the source is tied to the more positive rail and the channel conducts when the gate is pulled below the source by roughly 10 V. P-channel parts belong to the MOSFET -> discrete semiconductor -> power-switch transistor hierarchy, and they complement N-channel MOSFETs in half-bridge and high-side switch topologies where driving an N-channel above the input rail would otherwise require a bootstrap or charge-pump circuit. By selecting a P-channel for the high side, the gate-drive requirement is simplified to a ground-referenced logic signal, reducing overall BOM cost and PCB area.
Key parametric features include a low typical gate charge (Qg) consistent with the OptiMOS P-channel 60 V family, logic-level compatible VGS(th), avalanche-rated single-pulse robustness, and an exposed die-attach pad (FL = flip-chip leadless) that delivers a junction-to-case thermal resistance compatible with 188 W class dissipation when properly soldered to a multi-layer copper PCB. The device is rated for operation across the -55 °C to +175 °C junction temperature range and is qualified to JEDEC moisture sensitivity level 1.
In typical application circuits the ISC240P06LMATMA1 is wired source-to-rail with the drain feeding the load, and the gate is driven by a low-side gate driver or microcontroller GPIO that swings between 0 V and VCC. Because conduction loss scales with I²×RDS(on), the 24 mΩ maximum on-resistance enables efficient switching at currents up to ~30 A continuous without aggressive thermal management.
When designing with this part, observe Infineon's PCB layout recommendations: stitch the FL exposed pad to a continuous copper pour on the top and inner layers with at least 6 thermal vias, and ensure the source Kelvin connection is used for accurate current sensing. Use a 10 kΩ gate-to-source pull-up resistor to hold the switch off during MCU reset. Compared with N-channel equivalents, the trade-off is approximately 2× higher RDS(on) for the same silicon area and a tighter safe operating area at high VDS.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical PCB thermal design notes not consolidated on any single manufacturer or distributor page.
Bộ thay thế dễ dàng lắp đặt cho ISC240P06LMATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC240P06LMATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Drain-Source Voltage (VDS), FET Type, Operating Junction Temperature, Operating Temperature Range.
IPB110P06LMATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC045N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC240P06LMATMA1 Tỷ lệ tối đa & tính chất điện
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID, Tc) | -59 A |
| On-Resistance RDS(on) max @ VGS=-10V | 24 mΩ |
| Power Dissipation (Ta) | 188 W |
| Technology | OptiMOS trench |
| Hộp | PG-TDSON-8 FL (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (single-pulse) |
| Lead-Free / RoHS | Yes (per Infineon product page) |
| REACH Compliance | Compliant |
Cấu hình chân ISC240P06LMATMA1
| Chân 1 | S — Source (connected to +V supply rail) |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate (driven 0 V to -VGS for ON) |
| Chân 5 | D — Drain (load connection) |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
| Chân 9 | D (EP) — Drain tab / exposed thermal pad - electrically drain, primary thermal path |
Khu vực hoạt động an toàn (DC, TC = 25 °C)
Ứng dụng tiêu biểu
ISC240P06LMATMA1 phù hợp cho 6 Áp dụngs: Automotive 12 V High-Side Load Switch, Industrial 24 V Solenoid and Valve Driver, USB Power Delivery and Battery Isolation Switch, Hot-Swap and In-Rush Current Limiter, LED Driver High-Side Switch, Motor Drive Half-Bridge (Low-Side Coordination).
Automotive 12 V High-Side Load Switch
The ISC240P06LMATMA1's -60 V VDS rating provides >5× design margin over a 12 V automotive bus, tolerating load-dump transients up to 35 V without avalanche breakdown. With RDS(on) max of 24 mΩ at VGS = -10 V, conduction loss at 10 A is roughly 2.4 W - manageable without a heatsink when the FL exposed pad is soldered to a 6 cm² copper pour. The P-channel topology eliminates the bootstrap capacitor required by an N-channel equivalent, simplifying ECU layouts for body-control modules, lighting drivers and seat-control relays where 10-30 A switching is routine.
Được đề xuất
Industrial 24 V Solenoid and Valve Driver
At a 24 V industrial supply rail, the ISC240P06LMATMA1's 60 V VDS rating gives >2× margin over the worst-case 36 V transient envelope, while its 59 A continuous ID rating comfortably handles the inrush of solenoid coils and proportional valves (typical 5-15 A hold, 30-40 A inrush). The PG-TDSON-8 FL package delivers <1 °C/W RthJC when soldered to inner-layer copper, supporting 188 W dissipation pulses during inductive turn-off. Place a TVS or free-wheeling diode across inductive loads to clamp the kick-back within the 60 V rating.
Được đề xuất
USB Power Delivery and Battery Isolation Switch
In USB-PD and battery-pack designs, the ISC240P06LMATMA1 acts as a reverse-polarity and over-current isolation FET between the pack and the system rail. The 24 mΩ RDS(on) at VGS = -10 V keeps full-load voltage drop below 100 mV at 5 A, while the P-channel gate can be driven directly from an MCU GPIO without a charge pump. The -55 °C to +175 °C junction rating covers automotive temperature-class 2, and JEDEC MSL-1 simplifies reflow-process qualification for high-volume consumer production.
Được đề xuất
Hot-Swap and In-Rush Current Limiter
The ISC240P06LMATMA1's 188 W pulse power rating and avalanche-rated single-pulse robustness make it well-suited as a hot-swap FET that absorbs the inrush of charging bulk capacitors on a 12 V or 24 V backplane. By slewing the gate with an RC network (10 kΩ + 100 nF), the designer programs a turn-on time that holds the FET within its linear-region SOA until the capacitor charges. The SuperSO8 5x6 footprint matches industry-standard hot-swap layouts, allowing direct migration from legacy P-channel parts.
Được đề xuất
LED Driver High-Side Switch
Driving high-brightness LED strings from a 12-24 V supply, the ISC240P06LMATMA1 functions as a high-side PWM switch with frequencies up to 100 kHz thanks to its low OptiMOS gate charge. The P-channel gate is driven by a logic-level signal referenced to ground, simplifying the interface to microcontrollers and LED-driver ICs. With 24 mΩ RDS(on) and 59 A ID rating, the part easily handles 5-10 A LED strings used in automotive matrix headlights and architectural lighting while keeping conduction loss below 3% of total power.
Được đề xuất
Motor Drive Half-Bridge (Low-Side Coordination)
In a brushed DC or small BLDC drive, the ISC240P06LMATMA1 can serve as the high-side switch in a half-bridge paired with an N-channel low-side MOSFET such as the IPB60R040CFD7ATMA1. The P-channel's ground-referenced gate drive removes the need for a bootstrap diode, reducing component count for low-power fans, pumps and small actuators. The 60 V rating easily covers 24 V motor back-EMF, while the 24 mΩ RDS(on) keeps I²R heating manageable at 5-15 A continuous phase currents.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC240P06LMATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPB110P06LMATMA1 | ISC045N03L5SATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel |
| VDS max | -60 V | -60 V | 30 V | 40 V |
| Continuous ID (Tc) | -59 A | -30 A | 45 A | 76 A |
| RDS(on) max @ VGS=10V | 24 mΩ | 110 mΩ | 4.5 mΩ | 7.6 mΩ |
| Power Dissipation | 188 W | 167 W | 139 W | 188 W |
| Technology | OptiMOS (trench, P-channel) | OptiMOS (trench, P-channel) | OptiMOS 5 (N-channel) | OptiMOS (N-channel) |
| Gate Drive | Logic-level P-channel (0 / -VGS) | Logic-level P-channel | Standard N-channel (gate above rail) | Standard N-channel (gate above rail) |
Bảo phân biệt quan trọng
- P-channel topology eliminates bootstrap/charge-pump (vsN-channel 60 V MOSFETs in the same SuperSO8 footprint)
- Lower RDS(on) versus other Infineon P-channel 60 V parts (vsIPB110P06LMATMA1)
- High pulse power for hot-swap and inrush limiting (vsSmaller P-channel MOSFETs in TSOP-6 / SOT-23 packages)
Ghi chú thiết kế
Estimated: at VIN = 12 V, VDS = 60 V worst case, and pulsed ID = 30 A, instantaneous dissipation approaches 188 W but only for <100 µs; steady-state 10 A operation dissipates roughly 2.4 W (I²R), which on a 6 cm² copper pour with 6 thermal vias (~20 °C/W RthJA) gives a junction rise of ~48 °C above 25 °C ambient - well within the 175 °C maximum. Always solder the FL exposed pad; dry solder joints can raise RthJC by 5-10× and cause field failures.
Per Infineon's PG-TDSON-8 FL layout guideline, stitch the FL exposed pad to a continuous top-layer copper pour and connect to inner-layer ground/thermal planes with at least six 0.3 mm thermal vias in a 3×2 grid. Place the gate-drive trace away from the drain switching node to minimise dv/dt-induced false turn-on; a 10 kΩ gate-source resistor holds the FET off during MCU reset, and a small ferrite bead or 100 Ω series gate resistor damps high-frequency ringing on the gate.
Common pitfalls when using ISC240P06LMATMA1: (1) forgetting that the device is P-channel - the source must go to the more positive rail, otherwise the body diode conducts permanently; (2) omitting the gate pull-up resistor - the gate floats high-impedance during MCU reset and can partially turn on; (3) exceeding the 60 V VDS rating with inductive kick-back - always place a free-wheeling diode or TVS across inductive loads; (4) using the part outside MSL-1 handling rules for moisture-sensitive components.
Thông tin tuân thủ
RoHS and lead-free per Infineon product page; AEC-Q100 not explicitly claimed for this part number on the manufacturer page; halogen-free status not stated in the verified data - [DATA_NEEDED].
