BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon
MPN: BSC155N06NDATMA1 ✓ Hoạt độngBSC155N06NDATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. As a member of the power management hierarchy, it sits beneath DC-DC converters, voltage regulators, and motor drivers. The 'N-channel' designation means conduction occurs via electrons, which yields lower on-resistance per unit silicon area than P-channel equivalents. The 'dual' configuration integrates two independent MOSFET dies in one thermally efficient package, simplifying half-bridge, synchronous-rectifier, and full-bridge topologies by halving board area and parasitic inductance.
Key features include a 60 V VDS breakdown rating suitable for 12 V and 24 V bus systems, 15.5 mOhm maximum RDS(on) at VGS=10 V, low Qgd/Qgs ratio below 0.8 for high shoot-through immunity in half-bridge topologies, and operation up to 175 C junction temperature. The PG-TDSON-8 SuperSO8 package provides superior thermal resistance compared to standard SO-8, enabling higher continuous current without external heatsinking.
The architecture leverages OptiMOS 3 trench cell design to minimize both conduction and switching losses. With low figure-of-merit (RDS(on) x Qg), this part is optimized for high-frequency synchronous rectification in switched-mode power supplies, where reduced switching loss directly improves system efficiency at elevated switching frequencies of 200 kHz to 1 MHz.
Typical applications include synchronous rectification in 12 V isolated DC-DC converters, motor drive half-bridges in battery-powered tools, class-D audio amplifier output stages, and OR-ing FET configurations in redundant power systems. The dual co-packaged design is particularly valuable where PCB real estate is constrained.
When designing with this device, ensure gate-drive voltage reaches at least 10 V for full enhancement, and keep the high-current loop area minimal to control switching transients. The exposed pad must be soldered to a sufficiently large copper pour (typically 1 square inch minimum) for thermal dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet, providing engineering context for component selection and supply-chain decisions.
Bộ thay thế dễ dàng lắp đặt cho BSC155N06NDATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC155N06NDATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, RoHS Status.
BSC0901NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC016N04LSATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC014N04LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0501NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N10NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0993NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC155N06NDATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC155N06NDATMA1 |
| Technology | OptiMOS 3 (N-channel trench) |
| Configuration | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| Hộp | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant (Pb-free plating) |
| Lead-Free Plating | Yes |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 |
Cấu hình chân BSC155N06NDATMA1
| Chân 1 | S1 — Source of MOSFET 1 (low-side) |
| Chân 2 | G1 — Gate of MOSFET 1 |
| Chân 3 | S2 — Source of MOSFET 2 (low-side) |
| Chân 4 | G2 — Gate of MOSFET 2 |
| Chân 5 | D2 — Drain of MOSFET 2 (high-side) |
| Chân 6 | D2 — Drain of MOSFET 2 (high-side, continued) |
| Chân 7 | D1 — Drain of MOSFET 1 (high-side) |
| Chân 8 | D1 — Drain of MOSFET 1 (high-side, continued) |
Ứng dụng tiêu biểu
BSC155N06NDATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in 24V DC-DC Converters, Motor Drive Half-Bridges in Battery-Powered Tools, Class-D Audio Amplifier Output Stage, OR-ing FET Configuration in Redundant Power Systems, Industrial 24V Bus Switching and Load Management, Automotive 12V eFuse and Solid-State Relay.
Synchronous Rectification in 24V DC-DC Converters
The BSC155N06NDATMA1 fits 24 V bus synchronous rectification because its 60 V VDS breakdown voltage provides ample margin above the 24 V nominal plus transient spikes (load-dump up to 35 V in automotive), while its 15.5 mOhm maximum RDS(on) at VGS=10 V minimizes conduction loss during the freewheeling phase. The dual N-channel co-packaged design reduces the high-current loop area between the high-side and low-side FETs, cutting parasitic inductance that would otherwise generate voltage overshoot during commutation. Placed on the secondary side of an isolated DC-DC converter (e.g., between the synchronous rectifier node and the 12 V or 5 V output), this part replaces two discrete SO-8 MOSFETs and improves thermal coupling. The OptiMOS 3 trench technology delivers a low figure-of-merit that maintains efficiency at switching frequencies of 200 kHz to 1 MHz, where the part can be benchmarked against the BSC0901NSIATMA1 and BSC0501NSIATMA1 in the same package.
Được đề xuất
Motor Drive Half-Bridges in Battery-Powered Tools
In cordless drill and impact-driver half-bridge stages, the BSC155N06NDATMA1's dual co-packaged configuration implements one leg of an H-bridge driver, with the high-side and low-side N-channel switches sharing a single SuperSO8 5x6 mm thermal pad. The 60 V VDS rating covers the back-EMF of 18 V to 20 V battery packs during braking, while 20 A continuous drain current meets the peak torque demand of brushless DC motors. Its 175 C maximum junction temperature tolerates the high ambient temperatures inside sealed tool housings. Designers should note the Qgd/Qgs ratio below 0.8 provides shoot-through immunity that simplifies dead-time tuning, a critical factor in PWM-driven motor control where cross-conduction can destroy the FETs in microseconds.
Được đề xuất
Class-D Audio Amplifier Output Stage
The BSC155N06NDATMA1 serves as the output power stage in class-D audio amplifiers where its 60 V VDS supports +/- 25 V supply rails typical of 100 W to 200 W automotive and home-audio amplifiers. The 15.5 mOhm RDS(on) reduces output-stage conduction loss, directly improving amplifier efficiency (typically 90%+ versus 50% for class-AB), which reduces heatsink requirements and extends portable-speaker battery life. Its dual-die packaging ensures matched RDS(on) between the P-channel-replacement N-channel pairs (used in BTL configuration), preventing DC offset at the speaker output that would otherwise cause voice-coil damage. The part's fast switching capability (low Qg) is essential for reproducing audio without distortion at the 250 kHz to 500 kHz typical PWM carrier frequencies.
Được đề xuất
OR-ing FET Configuration in Redundant Power Systems
In server and telecom redundant 12 V or 24 V power architectures, the BSC155N06NDATMA1 implements the OR-ing FET function that isolates a failing power supply from the shared DC bus, preventing back-feeding that would otherwise cause system-wide downtime. The dual-die package is ideal for OR-ing two independent power sources in parallel to a common load, where each FET must block full bus voltage during fault conditions (60 V rating covers 24 V nominal). Its 15.5 mOhm RDS(on) adds only ~0.78 W of dissipation at 5 A load per channel, compared to a Schottky diode solution that would dissipate ~5 W. The part's fast body-diode recovery supports hot-swap insertion of power modules without bus disturbance.
Được đề xuất
Industrial 24V Bus Switching and Load Management
The BSC155N06NDATMA1 handles high-side load switching in industrial PLC and industrial-IoT applications where 24 V DC bus switching controls solenoids, relays, motor contactors, and heating elements. The 60 V VDS rating provides headroom for 24 V industrial bus transients (per IEC 61131-2 surge testing), and the dual-die package can drive two independent loads from one IC. The exposed SuperSO8 thermal pad supports continuous operation at high ambient factory temperatures (up to 85 C), where the 175 C junction rating leaves ample thermal margin. Engineers should size the gate-drive resistor to limit dV/dt-induced turn-on, especially when driving inductive loads, and pair this FET with a TVS diode for transient voltage clamping beyond 60 V.
Được đề xuất
Automotive 12V eFuse and Solid-State Relay
In automotive 12 V electrical systems the BSC155N06NDATMA1 serves as the switching element in solid-state relays (SSR) and electronic fuses (eFuse) that replace traditional mechanical relays and fuses. The 60 V VDS rating handles 12 V load-dump transients up to 35 V (per ISO 7637-2), and the dual co-packaged design implements both the main switch and a reverse-polarity protection FET in one footprint. The 20 A continuous current suits headlight, fan, and seat-heater switching. Note that for AEC-Q100/AEC-Q101 qualified automotive variants, designers should verify the specific automotive-grade part number with Infineon rather than the standard BSC155N06NDATMA1.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC155N06NDATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC0901NSIATMA1 | BSC016N04LSATMA1 | BSC0501NSIATMA1 | BSC0993NDATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Drain-to-Source Voltage (VDS) | 60 V | 100 V | 40 V | 60 V | 60 V |
| Technology Generation | OptiMOS 3 (60V) | OptiMOS (100V) | OptiMOS (40V) | OptiMOS (60V) | OptiMOS 3 (60V) |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS / Lead-Free | Yes / Pb-free plating | Yes / Pb-free | Yes / Pb-free | Yes / Pb-free | Yes / Pb-free |
Bảo phân biệt quan trọng
- OptiMOS 3 60V generation with low 15.5 mOhm RDS(on) (vsBSC0901NSIATMA1)
- Dual co-packaged N-channel in single SuperSO8 (vsDiscrete single-MOSFET solutions (e.g., IRF540NSTRLPBF))
- Qgd/Qgs ratio below 0.8 for high shoot-through immunity (vsBSC014N04LSATMA1 (40V class))
Ghi chú thiết kế
Estimated: At maximum rated conditions of 50 W power dissipation at Tc=25C, the junction-to-case thermal resistance of the PG-TDSON-8 SuperSO8 package allows reliable operation only when the exposed thermal pad is soldered to a copper pour of at least 25 mm x 25 mm on a 2 oz copper PCB. Without sufficient copper heatsinking, continuous drain current must be derated to ~5 A at 85C ambient to keep junction temperature below 150C (75% of the 175C maximum). Engineers should always verify thermal performance with a thermal-coupon measurement on the actual PCB stack-up.
Place the gate-drive resistors (typically 10 Ohm to 100 Ohm) as close as possible to the gate pins (pins 2 and 4) to minimize parasitic inductance that causes gate ringing and possible shoot-through. The exposed thermal pad must be soldered using a via array (typically 9 to 16 thermal vias, 0.3 mm diameter) to inner-layer copper planes. Source pins (1 and 3) should connect to a low-impedance ground/power-return plane, since source inductance directly subtracts from the gate-drive voltage (VGS = Vgate_drive - Ls x di/dt).
Do not exceed VGS of +/-20 V absolute maximum, even though typical gate drive is 10 V. Body-diode reverse recovery (Qrr) in synchronous rectifier topologies can cause cross-conduction if dead-time is not carefully tuned - the Qgd/Qgs ratio below 0.8 helps but does not eliminate this risk. For half-bridge configurations, add a small RC snubber (typically 10 Ohm + 1 nF) across the drain-source of each FET to damp ringing caused by parasitic inductance. Avoid placing the FETs in series for higher VDS - use a single higher-voltage part instead, since dynamic VDS sharing is unreliable.
Thông tin tuân thủ
RoHS compliant with Pb-free plating per Infineon product page. The standard BSC155N06NDATMA1 part is not AEC-Q100 qualified; for automotive designs requiring AEC-Q101, source the explicitly automotive-graded Infineon variant in the same family. Halogen-free status not explicitly stated in the verified web data.
