BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
MPN: BSC014N04LSATMA1 ✓ Hoạt độngBSC014N04LSATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which conduction between drain and source is enabled by applying a positive gate-source voltage. Modern trench MOSFETs such as OptiMOS 5 are widely used as the low-side synchronous rectifier in buck converters and as the high-side/low-side switch in half-bridge topologies, where their low R_DS(on) directly determines conduction loss. Compared with earlier planar generations, OptiMOS 5 achieves about 15% lower R_DS(on) and 31% lower figure of merit (R_DS(on) x Qg), making it a representative of the latest low-voltage power-MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management building block.
Key features of the BSC014N04LSATMA1 include a 1.4 mOhm maximum R_DS(on) at VGS=10 V, an ultra-low gate charge for fast switching, an exposed SuperSO8 leadframe for top-side cooling, and 2.5 W power dissipation at Ta / 96 W at Tc. The thin-wafer process enables simultaneously low conduction loss and low switching loss, which is critical at high switching frequencies (300 kHz to 1 MHz) typical of modern VRM and POL converters.
The architecture relies on an advanced thin-wafer trench cell, which minimizes the cell pitch while preserving avalanche ruggedness. The result is a figure of merit (FOM = R_DS(on) x Qg) among the lowest in the 40 V class, reducing both driver losses and thermal rise. The SuperSO8 (TDSON-8 FL) package has an exposed pad that doubles as both the drain connection and a thermal path, allowing the PCB copper pour to sink heat directly into the board.
Typical applications include synchronous rectification in 12 V server and telecom DC-DC converters, 24 V industrial point-of-load regulators, USB-PD and e-mobility auxiliary rails, motor-drive H-bridges, and battery-management system (BMS) protection. Designers typically select this part when conduction loss dominates and switching frequency exceeds 250 kHz.
When designing with the BSC014N04LSATMA1, place a 100 nF ceramic bypass capacitor close to the gate pin to suppress parasitic turn-on caused by the drain-to-gate Miller capacitance. Confirm that the gate-drive voltage swings cleanly between 0 V and 10 V; a 4.5 V drive is acceptable for logic-level applications, but full enhancement requires VGS = 10 V to reach the rated 1.4 mOhm R_DS(on).
This page synthesizes Infineon's official datasheet values with distributor pricing, verified drop-in equivalents, and practical PCB layout notes not found in the standalone datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSC014N04LSATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC014N04LSATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Operating Junction Temperature.
BSC014N04LSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6N015ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC035N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0501NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC0805NLSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N04LSATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 96 W |
| Gate-Source Voltage (VGS) max | 20 V |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Hộp | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Kiểu lắp đặt | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (unlimited) |
Cấu hình chân BSC014N04LSATMA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | D/Pad — Drain / Thermal pad (exposed) |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC014N04LSATMA1 phù hợp cho 7 Áp dụngs: 12V Synchronous Rectification in Server DC-DC Converters, 24V Industrial Point-of-Load Regulators, USB-PD and e-Mobility Auxiliary Rails, Motor Drive H-Bridge (Low-Side Switch), Battery Management System (BMS) Protection FET, Hot-Swap and OR-ing Controllers in Telecom, Solar Micro-Inverter Low-Side Stage.
12V Synchronous Rectification in Server DC-DC Converters
The BSC014N04LSATMA1 is the textbook low-side synchronous rectifier in 12 V VRM and POL stages. Its 1.4 mOhm R_DS(on) at VGS=10 V keeps full-load efficiency above 96 percent at 25 A, and its ~30 nC total gate charge lets a 500 kHz buck converter switch cleanly without overheating the gate driver. Place the part on the cold side of the PCB with a 1 sq-in copper pour and the exposed pad handles the thermal load directly.
Được đề xuất
24V Industrial Point-of-Load Regulators
In 24 V industrial bus rails the BSC014N04LSATMA1's 40 V VDS rating gives 15 V transient margin, while its 100 A continuous ID at Tc supports 30 A continuous output without thermal throttling. The OptiMOS 5 thin-wafer process gives a 31 percent better FOM than the previous generation, which directly reduces heatsink cost in factory-automation POL converters. A 100 nF gate bypass and a gate-drive resistor of 10-22 Ohm complete the layout.
Được đề xuất
USB-PD and e-Mobility Auxiliary Rails
USB-PD 3.1 sinks and 48 V mild-hybrid auxiliary rails demand a 40 V MOSFET with very low R_DS(on) at modest switching loss. The BSC014N04LSATMA1 fits this niche well: 1.4 mOhm RDS(on) plus 175 C junction rating lets engineers run at 300 kHz without exceeding thermal limits. In 12 V e-bike and e-scooter DC-DC stages it is the standard low-side switch, often paired with a BSC097N06NS high-side.
Được đề xuất
Motor Drive H-Bridge (Low-Side Switch)
Brushless DC motor drives up to 25 A continuous can use the BSC014N04LSATMA1 as the low-side switch in each half-bridge leg. The 1.4 mOhm RDS(on) minimizes rotor-current ripple heating, and the exposed SuperSO8 pad handles regenerative braking transients. The 40 V rating easily covers 24 V motor supplies and supports back-EMF spikes when paired with a TVS clamp of 33 V working voltage.
Được đề xuất
Battery Management System (BMS) Protection FET
In 4S-8S Li-ion battery packs the BSC014N04LSATMA1 can serve as the pack-protection MOSFET when continuous discharge is below 100 A. Its 1.4 mOhm RDS(on) at VGS=10 V keeps voltage drop under 100 mV at 70 A, preserving usable battery capacity. The 40 V rating covers 12S packs (nominally 36 V) with margin for transient overvoltage. Use two devices in parallel for higher current packs.
Được đề xuất
Hot-Swap and OR-ing Controllers in Telecom
The BSC014N04LSATMA1 is suited to 12 V/24 V telecom hot-swap and OR-ing FET roles where the part is fully on most of the time. Its 1.4 mOhm RDS(on) at VGS=10 V gives forward-voltage drop below 50 mV at 35 A, well inside typical OR-ing diode-replacement budgets. The 175 C junction temperature allows operation at elevated ambient temperatures in outdoor enclosures without derating.
Được đề xuất
Solar Micro-Inverter Low-Side Stage
Sub-1 kW solar micro-inverters often use the BSC014N04LSATMA1 as the low-side switch in the 30-50 kHz boost PFC stage. Its low gate charge and 1.4 mOhm RDS(on) help meet 98 percent EU efficiency targets while keeping the BOM cost below comparable GaN alternatives. A 100 nF gate bypass plus 10 Ohm gate resistor completes the layout.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC014N04LSATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC014N04LS | IAUC100N04S6N015ATMA1 | BSC035N04LSGATMA1 | BSC0501NSIATMA1 | ISC0805NLSATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.5 mOhm | 3.5 mOhm | 5.0 mOhm | 8.0 mOhm |
| Automotive Qualified | No | No | Yes (AEC-Q101) | No | No | No |
| Technology | OptiMOS 5 (thin-wafer trench) | OptiMOS 5 (thin-wafer trench) | OptiMOS 5 (Auto) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Unit price @ qty 1000 (USD) | 0.81 | 0.79 | 1.05 | 0.62 | 0.48 | 0.40 |
Bảo phân biệt quan trọng
- Lowest RDS(on) in the Infineon 40V SuperSO8 family (vsBSC035N04LSGATMA1)
- Automotive-grade drop-in option exists within the same footprint (vsIAUC100N04S6N015ATMA1)
- OptiMOS 5 thin-wafer process: 31 percent lower FOM vs prior generation (vsBSC0501NSIATMA1)
Ghi chú thiết kế
Estimated: at VIN=12 V, VOUT=1.0 V, IOUT=25 A synchronous rectification, the low-side FET sees roughly I^2 * R * (1-D) ~ 0.5 W average conduction loss in the BSC014N04LSATMA1. With ~50 C/W theta_JA on a 1 sq-in copper pour (SuperSO8 package), junction temperature rises 25 C above ambient - well within the 175 C limit. Always verify with a thermocouple on the exposed pad during prototype validation.
The SuperSO8 (TDSON-8 FL) exposed pad is the primary thermal path AND the drain connection. Use a PCB thermal via array (typically 9-16 vias of 0.3 mm diameter) directly under the pad, connected to inner-plane copper. Stitch the source pins (2/3) with a wide copper pour on the top layer to minimize source-inductance-induced ringing during switching transitions.
Do not drive the BSC014N04LSATMA1 gate below 4.5 V when the part must deliver rated 1.4 mOhm - the on-resistance rises roughly 2x. Always use a 10 V gate drive for synchronous-rectifier roles. Add a 100 nF ceramic bypass (X7R or X5R) directly at the gate pin to suppress Miller-capacitance-induced parasitic turn-on, especially in half-bridge layouts where dV/dt can exceed 5 kV/us.
Keep the gate-drive loop area below 0.5 sq-cm by routing gate and source return on adjacent layers. Place the gate-drive resistor (typically 10-22 Ohm) within 5 mm of the gate pin. Source-inductance in the power loop should be minimized by placing input capacitors as close as possible to the drain and source pads - this reduces ringing amplitude and EMI, which is the single largest PCB layout improvement at 500 kHz+ switching frequencies.
Thông tin tuân thủ
AEC-Q101 (not Q100) applies to the automotive variant IAUC100N04S6N015ATMA1 - the standard BSC014N04LSATMA1 is not automotive qualified per the Infineon product page. RoHS and REACH compliant per Infineon material declaration.
