BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
MPN: BSC0501NSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
Drop-in alternatives for BSC0501NSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0502NSIATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC034N06NSATMA1
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View Datasheet →BSC0911NDATMA1
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View Datasheet →BSC0993NDATMA1
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View Datasheet →BSC011N03LSATMA1
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View Datasheet →BSC0501NSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon |
| Product Family | OptiMOS 5 25V/30V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 29 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| Power Dissipation at Ta (PD) | 2.5 W |
| Power Dissipation at Tc (PD) | 50 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Avalanche Rated | Yes |
| Technology | Trench-gate OptiMOS 5 |
BSC0501NSIATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection (low-side return) |
| Pin 3 | Source — Source connection (low-side return) |
| Pin 4 | Source — Source connection (low-side return) |
| Pin 5 | Drain — Drain connection (high-voltage node) |
| Pin 6 | Drain — Drain connection (high-voltage node) |
| Pin 7 | Drain — Drain connection (high-voltage node) |
| Pin 8 | Source — Source connection (low-side return) |
| Pin PAD | Source / Thermal Pad — Exposed thermal pad - main Source terminal and heat dissipation path |
Safe Operating Area (DC)
Typical Applications
BSC0501NSIATMA1 is suitable for 6 applications: Synchronous Rectifier in 12V POL Buck Converters, USB Power Delivery (PD) Load Switch, 24V Industrial Motor Drive Low-Side Switch, Automotive 12V Battery Management Load Switch, LED Driver High-Side Switch, Server & Telecom DC-DC Converter Switch.
Synchronous Rectifier in 12V POL Buck Converters
The BSC0501NSIATMA1 is ideally suited as the low-side synchronous-rectifier MOSFET in point-of-load (POL) buck converters powered from a nominal 12 V input rail. The 30 V VDS rating provides comfortable margin above the 12 V nominal plus transient spikes seen in telecom and server power architectures, while the OptiMOS 5 figure-of-merit (RDS(on) × Qg) minimizes conduction and switching losses at the 300 kHz to 1 MHz switching frequencies common in modern POL designs. Placed on the low-side switch node, it complements a high-side control MOSFET and a dedicated gate-driver IC such as the XDPL8219XUMA1 to deliver >95% peak efficiency. The PG-TDSON-8-6 exposed thermal pad keeps junction temperature rise below 30°C at continuous 20 A loads when mounted on a 1 oz copper thermal land.
Recommended
USB Power Delivery (PD) Load Switch
The BSC0501NSIATMA1 functions as an excellent high-side load switch in USB Power Delivery (PD) and Type-C VBUS hot-swap circuits up to 5 A continuous current. Its 30 V VDS rating exceeds the 20 V maximum USB-PD VBUS voltage with substantial margin, and the 29 A continuous drain current provides a 5x safety factor over a typical 5 A PD contract. The low RDS(on) keeps voltage drop across the switch below 50 mV at full load, minimizing cable-voltage droop that would otherwise trigger PD under-voltage warnings. Paired with a hot-swap controller such as the ITS4090QEPDXUMA1 or ITS4130QEPDXUMA1, it forms a complete, protected Type-C VBUS switch with safe turn-on into capacitive loads and current-limit protection during fault conditions.
Recommended
24V Industrial Motor Drive Low-Side Switch
For 24 V industrial motor-control applications such as brushed-DC motors, solenoids, and relay drivers, the BSC0501NSIATMA1 serves as a robust low-side switch in H-bridge or half-bridge topologies. The 30 V VDS rating tolerates typical 24 V bus transients including inductive kickback when properly clamped with a flyback diode, while the 100 A pulsed drain current capability easily handles motor inrush at startup. Paired with a gate driver such as the 2ED2108S06FXUMA1 or IRS2302STRPBF, the part can be PWM-modulated up to 50 kHz for variable-speed motor control. The PG-TDSON-8-6 package's exposed thermal pad is essential for dissipating the I²R losses at heavy motor load, and the rugged OptiMOS 5 avalanche rating provides protection against unclamped inductive switching events.
Recommended
Automotive 12V Battery Management Load Switch
In 12 V automotive battery-management subsystems such as load switches, body-control modules, and LED-driver high-side paths, the BSC0501NSIATMA1 delivers reliable switching with the ruggedness demanded by the automotive environment. While not AEC-Q100 qualified itself, it is suitable for non-safety-critical 12 V body-electronics loads where the 30 V VDS rating tolerates load-dump transients up to ~35 V when paired with a TVS clamp such as the SMBJ5.0A. The low RDS(on) minimizes voltage drop and heat generation across the switch, critical for tight engine-bay thermal envelopes. For AEC-Q100-critical paths, the Infineon BSC030N03MSGATMA1 or IAUC60N06S5L073ATMA1 automotive-grade parts should be used as drop-in equivalents.
Recommended
LED Driver High-Side Switch
The BSC0501NSIATMA1 serves as an efficient high-side switch in constant-current LED drivers for architectural lighting, automotive exterior lighting, and high-brightness illumination. Its low RDS(on) minimizes power dissipation when controlling multi-amp LED strings, while the 30 V VDS rating easily handles 24 V LED-driver input rails. In a buck-mode LED-driver topology, the MOSFET switches at 100 kHz to 1 MHz to modulate LED current; the OptiMOS 5 low gate charge reduces driver-stage losses and enables the use of compact gate-driver ICs such as the XDPL8219XUMA1 or BTS700201ESPXUMA2. The PG-TDSON-8-6 package provides the thermal headroom needed to sustain continuous LED current without heatsinking in compact luminaire designs.
Recommended
Server & Telecom DC-DC Converter Switch
In 48 V-input intermediate-bus converters (IBCs) and 12 V-input point-of-load (POL) converters that power CPUs, ASICs, and FPGAs in server and telecom infrastructure, the BSC0501NSIATMA1 provides the synchronous-rectifier switching performance required for >95% peak efficiency. The OptiMOS 5 figure-of-merit minimizes both conduction losses (low RDS(on)) and switching losses (low Qg and Qgd), which is critical at the 500 kHz to 1 MHz switching frequencies used in modern CPU VRs. The PG-TDSON-8-6 package's low thermal resistance allows 50 W power dissipation on a properly designed PCB thermal land, supporting sustained high-current operation. Paired with a digital VR controller and the 2EDL8023GXUMA1 or 2EDL8123GXUMA1 half-bridge gate driver, it forms a high-density POL stage.
Recommended
Recommended Products Summary
Engineering reference data for BSC0501NSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0502NSIATMA1 | BSC034N06NSATMA1 | BSC0911NDATMA1 | BSC0993NDATMA1 | BSC011N03LSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 60 V | 25 V | 30 V | 30 V |
| Continuous Drain Current at Ta (ID) | 29 A | 26 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current at Tc (ID) | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at Ta (PD) | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Power Dissipation at Tc (PD) | 50 W | 50 W | 50 W | 50 W | 50 W | 50 W |
| Family / Technology | OptiMOS 5 30V | OptiMOS 5 30V | OptiMOS 5 60V | OptiMOS 5 25V | OptiMOS 5 30V | OptiMOS 5 30V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Lowest on-resistance in 30V OptiMOS 5 PG-TDSON-8-6 family (vs BSC0502NSIATMA1)
- 30V rating with same PG-TDSON-8-6 footprint as 60V family (vs BSC034N06NSATMA1)
- Best-in-class figure of merit (RDS(on) × Qg) (vs BSC0911NDATMA1)
Design Notes
Estimated: at continuous 20 A load with RDS(on) of ~5 mΩ at TA=25°C, conduction loss is ~2 W. With PG-TDSON-8-6 theta_JA of approximately 50°C/W on a 1 oz copper thermal land (1 in²), junction temperature rise is ~100°C above ambient. Derate current by 50% at TA=85°C, or use a 2 oz copper thermal land to halve the junction rise. Always refer to the Infineon OptiMOS 5 family thermal-resistance curves for board-specific de-rating.
The PG-TDSON-8-6 package exposes a Source-connected thermal pad that doubles as the primary current return. Use a top-layer copper pour covering at least 1 in² connected to Source, with multiple stitched thermal vias (≥9 vias, 0.3 mm drill) to the inner ground plane. Keep the gate-drive loop (gate-driver output → gate → source-return → driver ground) area minimized to under 0.5 cm² to limit parasitic inductance that causes gate-ringing at the MOSFET's Miller plateau.
Place a 100 nF X7R ceramic bypass capacitor within 5 mm of the gate pin to decouple the high di/dt gate-drive loop and prevent false triggering from drain-to-gate Miller coupling. For synchronous-rectifier stages, place a Schottky diode (e.g., 30 V rated) in parallel with the body diode if the application requires hard switching above the SOA curve, although the OptiMOS 5 avalanche rating generally eliminates this need for VDS ≤ 24 V applications.
Do not exceed ±20 V VGS - the gate oxide will permanently rupture above ±25 V, especially during transient ringing from the gate-driver inductance. Always use a gate-source pull-down resistor (10 kΩ typical) when the driver is in a high-impedance state to keep the MOSFET safely off during controller start-up. Also note that VGS(th) for OptiMOS 5 parts typically ranges 1-2 V, so 3.3 V microcontroller GPIO cannot directly drive the gate to full enhancement - always use a dedicated gate-driver IC for proper switching performance.
Compliance Information
RoHS compliant per Infineon product page. Lead-free and halogen-free per OptiMOS 5 family datasheet. JEDEC plastic-package surface-mount reliability qualified (MSL 1). Not AEC-Q100 qualified - use BSC030N03MSGATMA1 or IAUC60N06S5L073ATMA1 for automotive safety-critical paths.
