IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK
MPN: IGB50N60TATMA1 ✓ Hoạt độngIGB50N60TATMA1 Tóm tắt
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-controlled gate of a MOSFET with the high-current, low-saturation-voltage conduction capability of a bipolar junction transistor. In the broader component hierarchy it sits between MOSFETs and thyristors in the discrete-semiconductor family, and within power-electronic systems it acts as the primary switching element in the power stage. IGBTs dominate medium-power (400 V to 1700 V blocking voltage) hard-switched converters where MOSFETs become conduction-loss-limited and BJTs require complex base-drive circuits.
Key features of the IGB50N60TATMA1 include a low VCE(sat) typical of the Trenchstop 3 family, a short-circuit ruggedness of 5 µs minimum at TC = 25 °C and TJ = 150 °C, and a co-packaged anti-parallel diode optimized for hard-switched inductive loads. The TO-263 (D2PAK) package provides a solderable, surface-mount footprint while still exposing a large metal tab for PCB copper-pour heat spreading, enabling heatsink mounting for high-current continuous operation. Switching losses are tuned for hard-switching topologies with typical Eon in the sub-millijoule range.
Architecture-wise, the device uses Infineon's third-generation field-stop (FS) trench gate, which shrinks the drift region thickness and reduces tail-current losses during turn-off. The integrated anti-parallel EmCon3 diode is matched to the IGBT's switching characteristics, suppressing reverse-recovery transients in bridge legs. The wide reverse-bias safe operating area (RBSOA) and square RBSOA allow reliable operation into short-circuit events and inductive snubbers, which is critical for motor and PFC applications.
Typical applications for the IGB50N60TATMA1 include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, switched-mode power supplies (SMPS) up to several kilowatts, induction heating, welding equipment, and industrial motor drives for HVAC, pumps, and fans. Designers often pair it with 600 V gate drivers such as the 1ED020I12-B2 or EiceDRIVER 2ED020I12 in half-bridge and three-phase inverter configurations.
When designing with this part, carefully observe the maximum lead temperature during soldering (JEDEC J-STD-020 MSL profile) and provide sufficient copper area under the D2PAK tab to keep junction temperature below 150 °C under worst-case continuous load. The 5 µs short-circuit rating demands a fast gate-driver with desaturation (DESAT) protection to safely turn off the device within the rated window.
Bộ thay thế dễ dàng lắp đặt cho IGB50N60TATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IGB50N60TATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Mounting Type, Configuration, Technology.
IGB50N60SMD
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IRGB4062DPBF
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IKB20N60TATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FGH50N60SMD
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STGW50NC60W
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKW50N60T
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IGB50N60TATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | Trenchstop IGBT3 |
| Technology | Trench + Field-Stop |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 100 A |
| Continuous Collector Current (IC) at TC=100°C | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) |
| N Nap-Emit (Vce(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C |
| Nhiệt độ mối nối hoạt động | -40 °C to +150 °C |
| Hộp | PG-TO263-3-2 (D2PAK / TO-263) |
| Kiểu lắp đặt | Surface Mount |
| Co-packaged Diode | Anti-parallel EmCon3 diode |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Configuration | Single |
Cấu hình chân IGB50N60TATMA1
| Chân 1 | Gate — Gate drive input (voltage-controlled; 0 V off, +15 V on typical) |
| Chân 2 | Collector — Main current terminal (also bonded to the metal tab/back heat-spreader) |
| Chân 3 | Emitter — Common reference for gate drive and main current return |
| Chân TAB | Collector / Thermal Pad — Solderable metal tab; carries the collector current and provides the primary thermal dissipation path to PCB copper pour |
Reverse Bias Khu vực hoạt động an toàn (RBSOA)
Ứng dụng tiêu biểu
IGB50N60TATMA1 phù hợp cho 6 Áp dụngs: Solar String Inverters, Uninterruptible Power Supplies (UPS), Induction Heating Cooktops, Industrial Motor Drives, Welding Power Sources, Switched-Mode Power Supplies (SMPS).
Solar String Inverters
The IGB50N60TATMA1 is a strong fit for 600 V-bus photovoltaic string inverters up to approximately 5 kW. Its 600 V VCES provides adequate margin above the 380-400 V rectified bus of single-phase 230 V grid-tied systems, while the Trenchstop 3 die keeps Eon and Eoff in the sub-millijoule range, helping inverter efficiency exceed 97 percent. The co-packaged EmCon3 diode is specifically tuned for hard-switched boost-PFC and full-bridge legs, suppressing reverse-recovery transients that would otherwise increase EMI filter cost. Designers typically pair the IGB50N60TATMA1 with a 1ED020I12-B2 gate-driver and operate the IGBT at 16-32 kHz. Compared to a 600 V MOSFET solution at this power level, the IGBT cuts conduction losses roughly in half, while a SiC MOSFET would be required only for switching frequencies above 60-80 kHz.
Được đề xuất
Uninterruptible Power Supplies (UPS)
In double-conversion online UPS systems from 2-10 kVA, the IGB50N60TATMA1 handles the inverter and PFC stages at the 600 V bus level. Its 5 µs short-circuit withstand at 360 V VCE and 150 °C junction gives the gate-driver's DESAT protection time to detect a load short and safely turn off the IGBT, which is critical for unattended UPS installations. The 50 A continuous rating covers single-phase 230 V output at 5-6 kVA with comfortable margin; paralleling is straightforward for 10 kVA+ units. The Trenchstop 3 silicon's low VCE(sat) of approximately 1.5 V at 50 A reduces steady-state conduction losses, helping meet 96 percent+ efficiency targets. Designers should add a small RC snubber (10-22 ohm + 10-47 nF) across each switch to control dv/dt-induced ringing in the 600 V bus. Compared to a Gen 4 NPT part like the IRGB4062DPBF, the IGB50N60T typically delivers 10-15 percent lower switching losses in this application.
Được đề xuất
Induction Heating Cooktops
Resonant half-bridge and full-bridge induction cooktop topologies operating at 18-50 kHz are a classic application for the IGB50N60TATMA1. At 220-240 V rectified mains, the 600 V VCES provides comfortable headroom for the resonant tank's switching transients, while the 50 A continuous rating covers 3.5-5 kW cooktops at the design-center load. The Trenchstop 3 die's low Eoff reduces the heat the IGBT must dissipate during each zero-voltage-switching cycle, extending the cooktop's MTBF. The co-packaged EmCon3 diode doubles as the resonant freewheeling path during the cook-top's zero-voltage-switching deadtime, eliminating the need for an external anti-parallel diode. Operated below its thermal derating curve (TJ < 125 °C continuous), the device typically survives 50,000+ power-on hours. Designers should verify the switching frequency stays above the cooktop's resonant frequency to maintain ZVS and avoid hard-switching losses.
Được đề xuất
Industrial Motor Drives
Three-phase variable-frequency drives for HVAC fans, pumps, and small industrial motors up to 7.5 kW are a key application for the IGB50N60TATMA1. The 600 V VCES handles 380-480 V rectified three-phase industrial mains with adequate margin, and the 50 A continuous rating covers 400 V / 16 A rated motors with comfortable overload headroom for the 150 percent short-time overload typical of VFD designs. The 5 µs short-circuit withstand time gives the inverter's DESAT-based protection time to detect a phase-to-phase short or motor winding fault and shut down safely, preventing catastrophic module failure. The Trenchstop 3 silicon's lower switching losses compared to NPT predecessors (about 15-20 percent lower Eon+Eoff) reduce heatsink requirements and enable compact IPM-style integrated designs. Designers should provide 4-6 cm² of 2 oz copper under the D2PAK tab and verify IGBT-to-driver trace length stays under 50 mm for clean gate signals.
Được đề xuất
Welding Power Sources
Inverter-based MMA and MIG welding power sources in the 200-400 A output range, the IGB50N60TATMA1 operates in the secondary-side inverter stage at roughly 100 kHz switching frequency. Its low VCE(sat) of approximately 1.5 V at 50 A limits the steady-state dissipation in this hard-switched secondary, where heatsinking is constrained by the welding torch's weight budget. The co-packaged EmCon3 diode is rated for the high di/dt recovery stress typical of welding transformer leakage inductance, simplifying the inverter layout. The 5 µs short-circuit withstand gives the protection circuit the time it needs to detect a stuck-electrode condition without false tripping during normal arc strikes. Multiple IGB50N60TATMA1 parts are often paralleled in larger 400 A industrial welders, with small source-side ferrite beads balancing static current sharing. Designers should size the DC-link capacitor bank to handle the welding arc's pulsing nature.
Được đề xuất
Switched-Mode Power Supplies (SMPS)
High-power SMPS designs in the 3-10 kW range, including telecom rectifiers, server PSUs, and industrial DIN-rail supplies, often use the IGB50N60TATMA1 in the primary-side PFC or full-bridge converter stages. The 600 V VCES is well-matched to 380-480 V three-phase PFC front ends, while the 50 A continuous rating comfortably covers 5 kW at a 400 V bus with a 25-30 percent design margin. The Trenchstop 3 die's switching-loss profile enables 60-100 kHz operation, allowing a smaller HF transformer and output filter compared to older IGBT generations. The co-packaged diode simplifies full-bridge and two-switch-forward topologies, reducing part count and improving MTBF. For higher switching frequencies (above 100 kHz), a SiC MOSFET such as the IMW120R030M1H may deliver a better figure of merit; for cost-optimized 30-50 kHz designs the IGB50N60T is typically the better choice.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IGB50N60TATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IGB50N60SMD | IRGB4062DPBF | IKB20N60TATMA1 | FGH50N60SMD | STGW50NC60W |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | PG-TO263-3-2 (D2PAK) | D2PAK - same | D2PAK - same | D2PAK - same | D2PAK - same | D2PAK - same |
| VCES (V) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous IC at TC=100°C (A) | 50 A | 50 A | 48 A | 20 A | 50 A | 50 A |
| VCE(sat) typ at 50 A, 25°C (V) | 1.5 V | 1.7 V | 1.7 V | 1.5 V (at 20 A) | 1.6 V | 1.6 V |
| Total Power Dissipation (W) | 333 W | 298 W | 250 W | 150 W | 298 W | 310 W |
| Short-Circuit Withstand (µs) | 5 µs | 10 µs | 10 µs | 5 µs | 5 µs | 5 µs |
| Technology Generation | Trenchstop 3 (Trench + Field-Stop) | NPT Gen 4 | NPT Gen 4 | Trenchstop 3 | Trench + Field-Stop | Trench + Field-Stop |
| Co-packaged Diode | Yes (EmCon3) | Yes | Yes | Yes (EmCon3) | Yes | Yes |
Bảo phân biệt quan trọng
- Trenchstop 3 (Gen 5) trench + field-stop architecture with EmCon3 co-packaged diode (vsIGB50N60SMD (Infineon NPT Gen 4))
- Tighter VCE(sat) at 50 A (1.5 V typical) (vsSTGW50NC60W (STMicroelectronics))
- Established D2PAK supply with broad second-source drop-in alternatives (vsIGB50N60SMD / FGH50N60SMD / STGW50NC60W)
Ghi chú thiết kế
At continuous 50 A conduction in a typical 600 V half-bridge (50 percent duty, 25 °C ambient), the IGB50N60TATMA1 dissipates roughly 75 W internally (50 A × 1.5 V VCE(sat) × 1, duty-corrected). The D2PAK package has a junction-to-case thermal resistance θJC ≈ 0.45 °C/W, so TC will rise roughly 34 °C above the heatsink temperature. For an 80 °C heatsink, plan for TC near 114 °C and TJ near 130 °C - acceptable but tight. To stay below TJ = 125 °C continuous, attach the D2PAK tab to at least 6 cm² of 2 oz copper on a single-sided PCB, or use a small clip-on heatsink with thermal pad. Estimated: based on VCE(sat) = 1.5 V at IC = 50 A and θJC = 0.45 °C/W; verify with the Infineon thermal model in your specific layout. Source: Infineon IGB50N60T datasheet, thermal-resistance table.
Keep the gate-driver-to-IGBT trace under 50 mm total length and avoid crossing the power-loop area. Place a 10-22 ohm gate resistor close to the IGBT gate pin to dampen gate-oscillation and limit di/dt during turn-on. Add a local 100 nF X7R bypass capacitor between VCC (driver) and ground within 5 mm of the driver IC. For the power loop, minimize the DC-link-to-collector and emitter-to-shunt-loop-area to reduce stray inductance below 30 nH; this is critical for keeping turn-off voltage spikes below the 600 V VCES rating. The exposed metal tab of the D2PAK must be soldered to a sufficient copper pour to provide both thermal dissipation and a low-inductance collector connection. Source: Infineon IGB50N60T datasheet, layout guidelines; 1ED020I12-B2 datasheet.
Do not operate the IGB50N60TATMA1 above TJ = 150 °C - the die degrades rapidly and the 5 µs short-circuit withstand shrinks to roughly 3 µs at 150 °C. Always include a DESAT-based gate-driver protection circuit (e.g., 1ED020I12-B2 or 2ED020I12-F2) to detect desaturation within 4 µs and shut down the IGBT. Watch out for shoot-through in half-bridge configurations: introduce at least 500 ns of dead-time between the high-side and low-side gate signals. Do not parallel IGB50N60TATMA1 parts without individual source-side gate resistors (typically 5-10 ohm each) and matched gate-driver paths; unmatched gate impedances cause current imbalance and thermal runaway. Finally, observe MSL1 floor-life rules - even though the part is MSL1, it is still shipped in moisture-barrier bags with desiccant. Source: Infineon IGB50N60T datasheet, application notes; EiceDRIVER 1ED020I12 datasheet.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Lead-free reflow compatible per JEDEC J-STD-020 MSL1. AEC-Q100 qualification not applicable for this discrete IGBT - automotive designs should consider AEC-Q101 qualified equivalents or module-level solutions.
