BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
MPN: BSC100N10NSFGATMA1 ✓ Hoạt độngBSC100N10NSFGATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-driven semiconductor switch used to efficiently route or modulate current in power-conversion circuits; the OptiMOS family from Infineon belongs to the broader discrete MOSFET -> power semiconductor -> discrete component taxonomy. Lower RDS(on) reduces conduction loss (I²×R), while a low figure-of-merit (RDS(on)×Qg) reduces switching loss, allowing higher switching frequencies and smaller magnetics in SMPS designs.
Key features include 100V drain-source breakdown, 10 mΩ maximum RDS(on) at VGS=10V, an operating junction temperature range up to 150°C (per industry-standard 150°C power MOSFET practice), and a logic-compatible gate threshold suitable for standard gate drivers. The SuperSO8 5x6 footprint offers an exposed pad that minimizes thermal resistance and supports compact high-current PCB layouts.
The BSC100N10NSFGATMA1 leverages Infineon's OptiMOS trench technology to deliver a balanced switching/conduction loss profile. Its low FOM enables 100-500 kHz hard-switched topologies and synchronous rectification stages where previous-generation parts would either overheat or require paralleling.
Typical applications include telecom and server SMPS, synchronous rectifiers in 48V bus converters, DC-DC point-of-load (POL) modules, motor drive H-bridges, and hot-swap/OR-ing circuits. Its 100V rating provides ample headroom for 48V nominal rails with transient tolerance.
When designing with this device, ensure VGS is driven to 10V for the rated 10 mΩ RDS(on) — logic-level 4.5V drive will increase on-resistance and conduction loss. Use a gate-driver with sufficient peak current (≥1A source/sink) to achieve fast switching edges and minimize crossover loss.
This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparisons and design notes not collated in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSC100N10NSFGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC100N10NSFGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Part Number, Power Dissipation (Tc).
BSC090N10NS3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC042NE7NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC040N10NS5SCATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC123N08NS3GATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L020ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC093N15NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC100N10NSFGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A |
| Continuous Drain Current (ID), Tc | 90 A |
| Power Dissipation (PD), Tc | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ |
| Hộp | PG-TDSON-8-1 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSC100N10NSFGATMA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | S — Source |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn (estimated, based on PG-TDSON-8-1 100V class)
Ứng dụng tiêu biểu
BSC100N10NSFGATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom/Server SMPS Primary-Side Switch, Synchronous Rectifier in 48V→12V DC-DC Converters, DC-DC Point-of-Load (POL) Buck Stage, Motor Drive H-Bridge / Half-Bridge, Hot-Swap / OR-ing Circuit for Redundant 48V Rails, Solar Inverter / Photovoltaic Boost Stage.
48V Telecom/Server SMPS Primary-Side Switch
The BSC100N10NSFGATMA1 fits 48V nominal telecom and server SMPS primary-side switching where 100V VDS rating tolerates 80V transient excursions on the bus rail. Its 10 mΩ RDS(on) keeps conduction loss manageable at 20-40A load currents, while the low FOM (RDS(on)×Qg) enables 100-300 kHz switching frequencies that shrink magnetic size. Paired with a gate driver such as IRS2153D or IR2127S, it achieves >96% efficiency in 48V→12V LLC or hard-switched forward converters typical of distributed power architectures.
Được đề xuất
Synchronous Rectifier in 48V→12V DC-DC Converters
In 48V bus to 12V/24V POL converter synchronous rectification stages, the BSC100N10NSFGATMA1 replaces Schottky diodes to cut conduction loss. Its 100V rating covers the rectified 48V bus with substantial margin, and its low gate charge (Qg) enables fast switching transitions that minimize dead-time loss in the complementary pair. The SuperSO8 5x6 footprint with exposed thermal pad supports the high RMS currents typical of continuous-conduction-mode (CCM) synchronous rectification at 100-300 kHz switching frequency.
Được đề xuất
DC-DC Point-of-Load (POL) Buck Stage
For 24-48V input to 3-12V output buck POL modules, the BSC100N10NSFGATMA1 serves as the high-side or low-side switch. Its 100V VDS provides headroom for 48V telecom inputs with inductive ringing, while the 10 mΩ RDS(on) at 10V VGS drive keeps full-load efficiency above 95% at moderate switching frequencies. The SuperSO8 5x6 package's small footprint and exposed thermal pad allow compact POL designs that fit beneath BGA processors in server and networking equipment.
Được đề xuất
Motor Drive H-Bridge / Half-Bridge
In 24-48V brushless DC (BLDC) and stepper motor H-bridge stages, the BSC100N10NSFGATMA1 handles PWM switching up to 50 kHz with low crossover loss thanks to its low Qgd/Qgs ratio. Its 100V rating covers back-EMF spikes from 48V motors under hard braking, and the 90A pulsed current rating supports inrush transients during motor startup. The SuperSO8 5x6 footprint allows compact multi-axis motor driver PCB designs for industrial automation and robotics.
Được đề xuất
Hot-Swap / OR-ing Circuit for Redundant 48V Rails
In hot-swap and OR-ing circuits for redundant 48V server/telecom power feeds, the BSC100N10NSFGATMA1 acts as the load-switching element. Its 10 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation in the always-on conduction path, while the 100V VDS rating handles inrush transients and back-feed from parallel supplies. The device's logic-level compatible gate threshold (when driven above 10V VGS) enables simple controller ICs such as the BTS500801TEAAUMA1 to manage turn-on/turn-off sequencing.
Được đề xuất
Solar Inverter / Photovoltaic Boost Stage
In photovoltaic solar inverter boost stages operating from 24-80V panel input, the BSC100N10NSFGATMA1's 100V VDS rating tolerates open-circuit panel voltage at cold-temperature extremes while its 10 mΩ RDS(on) minimizes conduction loss in continuous PWM operation. The low FOM enables 50-100 kHz switching frequencies that shrink inductor size, and the exposed thermal pad supports sustained current at elevated ambient temperatures typical of outdoor inverter enclosures. The part's -55°C to +150°C junction rating ensures reliability across outdoor thermal cycling.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC100N10NSFGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC090N10NS3GATMA1 | BSC042NE7NS3GATMA1 | BSC040N10NS5SCATMA1 | BSC123N08NS3GATMA1 | IAUC100N04S6L020ATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 75 V | 100 V | 80 V | 40 V | 150 V |
| RDS(on) max at VGS=10V | 10 mΩ | 9 mΩ | 4.2 mΩ | 4 mΩ | 12.3 mΩ | 2 mΩ | 9.3 mΩ |
| Continuous Drain Current (Tc) | 90 A | 90 A | 100 A | 100 A | 90 A | 100 A | 90 A |
| Technology Generation | OptiMOS | OptiMOS | OptiMOS 3 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 |
| Param Match % | 100% | 90% | 80% | 90% | 80% | 70% | 70% |
Bảo phân biệt quan trọng
- Drop-in compatible with broader Infineon OptiMOS SuperSO8 5x6 family (vsBSC090N10NS3GATMA1)
- Higher VDS rating than competing OptiMOS 3 part (vsBSC042NE7NS3GATMA1)
- Established OptiMOS generation with proven OptiMOS 5 successor available (vsBSC040N10NS5SCATMA1)
Ghi chú thiết kế
Estimated: At ID=30A continuous and RDS(on)=10 mΩ, conduction loss is ~9W (I²×R). On a 4-layer PCB with 1 oz copper and ~25×25 mm top-layer copper pour under the PG-TDSON-8-1 thermal pad, the resulting θJA is approximately 50°C/W, yielding a junction temperature rise of ~75°C above a 50°C ambient. This places Tj near 125°C — acceptable but tight. For continuous operation above 30A, increase copper area to 1 square inch or use forced-air cooling to maintain a >50,000-hour MTBF.
Solder the exposed thermal pad (pins 5-8 drain) to a continuous PCB copper plane with minimum 6 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Place the gate-drive loop (gate resistor → MOSFET gate → driver GND) area-minimized and away from the power loop to prevent dv/dt-induced false turn-on. Use a 10-100 Ω gate resistor to control switching edge rate and reduce ringing on the gate node.
Do not drive VGS with logic-level 3.3V or 5V — the BSC100N10NSFGATMA1 requires 10V VGS to achieve the rated 10 mΩ RDS(on); under-driving will multiply conduction loss 2-3× and risk thermal runaway. Add a TVS diode or snubber across drain-source if the application has repetitive avalanche stress above 80V. Verify that the chosen gate driver can source/sink ≥1A peak current to fully switch the gate charge within 20-50 ns.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — not intended for automotive safety-critical applications.
