BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon
MPN: BSS306NH6327XTSA1 ✓ Hoạt độngBSS306NH6327XTSA1 Tóm tắt
A small-signal MOSFET is a low-power field-effect transistor designed for switching, level shifting, and load management in compact, high-density designs. Within the broader semiconductor taxonomy, the BSS306N sits in the discrete MOSFET category (MOSFET -> transistor -> discrete semiconductor -> semiconductor), enabling engineers to replace bipolar transistors or build efficient high-side/low-side switches where traditional BJTs would dissipate excessive heat.
Key specifications include 30 V drain-source voltage (VDS), 2.3 A continuous drain current (ID) at Ta, an on-resistance of approximately 57 mΩ typical, and low gate charge for high-frequency operation. The 3-pin SOT-23 package (PG-SOT23) is one of the industry's most common small-outline footprints, allowing direct drop-in compatibility with hundreds of N-channel MOSFETs.
Technically, the BSS306N leverages Infineon's OptiMOS technology, providing an optimized silicon trench cell structure that minimizes conduction and switching losses. The standard 2.5 V gate-threshold range allows direct logic-level drive from microcontrollers and ASICs without additional level-shifting circuitry.
Typical applications include load switching in portable electronics, power management in battery-powered systems, signal routing in industrial automation, automotive ECUs (body and chassis modules), and general-purpose DC-DC conversion stages.
When designing with this part, ensure the gate-source voltage stays within the recommended maximum and provide adequate PCB thermal relief, as 500 mW (Ta) is the absolute limit at 25°C. For high-current or high-ambient designs, derate power dissipation using the thermal resistance curve from the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSS306NH6327XTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSS306NH6327XTSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Continuous Drain Current (ID), Drain-Source Voltage (VDS), MSL Level.
BSS214NH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS138NH6327XTSA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS806NH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2N7002H6327XTSA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLML6346TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS306NH6327XTSA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSS306NH6327XTSA1 |
| Part Family | BSS306N (OptiMOS Small Signal) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| Hộp | SOT-23 (PG-SOT23), 3-pin |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -55°C to +150°C (TJ) |
| Qualification | AEC-Q101 (Automotive) |
| Lead Plating | Pb-free (RoHS compliant) |
| Configuration | Single N-Channel, 3-pin |
Cấu hình chân BSS306NH6327XTSA1
| Chân 1 | Gate (G) — MOSFET gate control input; logic-level drive capable |
| Chân 2 | Source (S) — MOSFET source terminal; connected to ground in low-side configuration |
| Chân 3 | Drain (D) — MOSFET drain terminal; connected to load in low-side configuration |
Khu vực hoạt động an toàn (SOA) - BSS306N family
Ứng dụng tiêu biểu
BSS306NH6327XTSA1 phù hợp cho 6 Áp dụngs: Automotive Load Switching, Portable / Battery-Powered Load Management, Industrial Automation Switching, DC-DC Converter Power Stage, LED Driver Switch, Signal Routing & Level Shifting.
Automotive Load Switching
The BSS306NH6327XTSA1's 2.3 A continuous drain current and AEC-Q101 automotive qualification make it an ideal high-side/low-side load switch for body and chassis ECUs. With 30 V VDS it comfortably handles 12 V automotive bus transients up to ~18 V load-dump. Placed between the MCU GPIO and the relay/LED load, the BSS306NH6327XTSA1 dissipates only millwatts under typical loads, vastly outperforming bipolar Darlington pairs. Logic-level gate drive simplifies direct interfacing with 3.3 V or 5 V automotive MCUs.
Được đề xuất
Portable / Battery-Powered Load Management
In portable and battery-powered designs, the BSS306NH6327XTSA1's low on-resistance minimizes conduction loss during load-switching, extending battery runtime. With 30 V VDS and 2.3 A ID, it can switch between Li-ion battery rails (3.0-4.2 V) and downstream boost/buck converters or peripheral subsystems. The SOT-23 footprint occupies minimal PCB area, critical for wearables and IoT devices. Estimated: at 1 A load with 50 mΩ RDS(on), conduction loss is only ~50 mW - well within the 500 mW Ta rating.
Được đề xuất
Industrial Automation Switching
The BSS306NH6327XTSA1 serves industrial automation modules that require reliable, automotive-grade switching in 24 V PLC and sensor networks. Its 30 V VDS provides sufficient margin above 24 V nominal rails (including ±10% tolerance and switching transients). At 2.3 A continuous current, it can directly drive solenoids, small relays, and indicator LEDs without driver stages. The wide -55°C to +150°C TJ range ensures operation in harsh factory environments, and AEC-Q101 qualification signals robust manufacturing quality.
Được đề xuất
DC-DC Converter Power Stage
The BSS306NH6327XTSA1 functions as a synchronous rectifier or low-side switch in compact DC-DC converter stages. Its low gate charge and fast switching capability minimize switching losses at frequencies up to several hundred kHz. With 30 V VDS, it handles intermediate bus voltages in 12 V to 5 V or 12 V to 3.3 V conversion stages. Placed as the low-side MOSFET in a synchronous buck topology, the BSS306NH6327XTSA1 achieves efficiency comparable to larger packages while saving board space.
Được đề xuất
LED Driver Switch
The BSS306NH6327XTSA1 is well-suited as a constant-current LED driver switch for indicator and lighting applications. With 2.3 A ID capability, it can directly drive multiple high-brightness LEDs in series or parallel arrays. The 30 V VDS supports LED strings of up to ~8-10 white LEDs (forward voltage ~3 V each). The SOT-23 footprint enables integration into compact backlight drivers. AEC-Q101 qualification permits use in automotive interior/exterior lighting where qualification is required.
Được đề xuất
Signal Routing & Level Shifting
The BSS306NH6327XTSA1 functions as a fast analog switch in signal routing applications, including test equipment multiplexing and level shifting. Its low on-resistance and small SOT-23 package make it suitable for high-density signal-path designs. At 30 V VDS and 2.3 A ID, it can pass analog signals up to ±15 V amplitude. The fast switching speed supports multiplexing of signals in the MHz range, while logic-level gate drive allows direct GPIO control from MCUs or FPGAs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSS306NH6327XTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSS214NH6327XTSA1 | BSS138NH6327XTSA2 | BSS806NH6327XTSA1 | 2N7002H6327XTSA2 | IRLML6346TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-23 (PG-SOT23), 3-pin | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 (Micro3) - same footprint |
| FET Type | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 20 V | 60 V | 20 V (P-ch) | 60 V | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | 1.5 A (Ta) | 0.2 A (Ta) | 2.0 A (Ta) | 0.2 A (Ta) | 3.4 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) | 360 mW (Ta) | 500 mW (Ta) | 360 mW (Ta) | 1.3 W (Ta) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | No (industrial) |
| Logic-Level Gate Drive | Yes (OptiMOS standard) | Yes | Yes | Yes | Yes | Yes (1.5V drive) |
Bảo phân biệt quan trọng
- AEC-Q101 automotive qualification in a standard 3-pin SOT-23 (vs2N7002H6327XTSA2)
- Higher continuous drain current than BSS138 in same package (vsBSS138NH6327XTSA2)
- N-channel polarity with OptiMOS technology for low RDS(on) (vsBSS806NH6327XTSA1 (P-channel))
Ghi chú thiết kế
At Ta=25°C the BSS306NH6327XTSA1 is rated for 500 mW continuous power dissipation. Estimated: with typical SOT-23 theta_JA ~250°C/W on a 1oz 2-layer board, junction temperature rises ~125°C above ambient at full 500 mW. For continuous loads above ~1 W of conduction loss (large VIN-VOUT differentials at high current), derate to 250-300 mW or add thermal copper pours under the drain tab to reduce theta_JA to ~150°C/W. Always consult the manufacturer datasheet SOA graph for your specific VDS and pulse duration.
The SOT-23 footprint requires minimum 0603-sized pads with thermal relief spokes. Route the high-current drain trace (pin 3) on the top layer with maximum copper width (at least 20 mil for 1 A continuous). Place a 100 nF ceramic bypass capacitor near the gate if the gate is driven by a long trace (>10 mm) to prevent parasitic oscillation. The exposed pad on SOT-23 is the drain, which doubles as a heatsink - keep the drain copper pour as large as practical.
Common pitfalls when using the BSS306NH6327XTSA1 include: (1) Exceeding VGS max by applying gate voltages above the rated maximum - the thin gate oxide can be permanently damaged; (2) Forgetting that SOT-23 has limited thermal mass - high-current pulses need SOA verification; (3) Mixing up the gate/source/drain pin assignment from competitor 2N7002-style parts that use opposite pin assignments. Always consult the manufacturer's pin configuration diagram before layout. The Infineon datasheet marks pin 1 as Gate, pin 2 as Source, pin 3 as Drain for the BSS306N family.
For switching applications above 100 kHz, minimize the gate-drive loop area by placing the gate pull-up/down resistor and series gate resistor within 5 mm of the gate pin. Keep the drain-to-source current loop compact to reduce parasitic inductance that causes voltage spikes at turn-off. If switching inductive loads (relays, solenoids), add a flyback diode across the load - the BSS306NH6327XTSA1's 30 V VDS provides adequate margin for typical 12 V and 24 V inductive kickback with proper clamping.
Thông tin tuân thủ
RoHS compliant with Pb-free lead plating per manufacturer datasheet. AEC-Q101 qualified for automotive applications (AEC-Q100 family standard for discrete semiconductors). Halogen-free status not explicitly stated in available data - confirm with manufacturer datasheet if required.
