IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
MPN: IAUC100N04S6N022ATMA1 ✓ Hoạt độngIAUC100N04S6N022ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to efficiently route or switch high currents at high speeds. MOSFETs sit within the broader transistor hierarchy (MOSFET -> transistor -> discrete semiconductor) and within Infineon's portfolio they belong to the OptiMOS 6 product line, which optimizes the figure-of-merit R_DS(on) x Q_g to deliver lower conduction and switching losses than prior generations. The PG-TDSON-8 package provides a low-inductance leadless footprint suitable for high-frequency switching converters and motor drives.
Key specifications of the IAUC100N04S6N022 include a maximum drain-source voltage V_DSS of 40 V, a typical on-state resistance R_DS(on) of 2.2 mOhm at V_GS = 10 V, and 100 A continuous drain current at case temperature. The S6 die variant indicates Infineon's latest silicon revision, delivering improved switching performance and lower gate charge compared to legacy S5 parts. Its AEC-Q100 automotive qualification makes it directly suited to 12 V and 24 V automotive subsystems where reliability and ruggedness are mandatory.
Typical applications include 12 V automotive brushed and brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, transmission control units (TCU), body electronics modules, and DC-DC converter high-side/low-side switches. The 2.2 mOhm R_DS(on) minimizes conduction loss in high-current paths, while the low Q_g reduces driver losses.
When designing with this MOSFET, ensure the gate driver supplies at least 10 V V_GS for full enhancement and that PCB copper area is sized to keep the junction temperature within the -55C to +175C operating range under worst-case load. The drain tab is electrically connected to the drain terminal and must be soldered to a sufficiently large copper pour for thermal dissipation.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes drawn from the Infineon OptiMOS 6 datasheet and AEC-Q100 automotive design references, providing information not consolidated on any single distributor page.
Bộ thay thế dễ dàng lắp đặt cho IAUC100N04S6N022ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC100N04S6N022ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Automotive Qualification, Technology, Operating Temperature Range.
IAUC120N04S6N010ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6L030HATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC100N04S5L1R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC100N04S51R7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N015GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L050HATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB100N04S4H2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04LSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6N022ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A |
| Power Dissipation (P_D, Tc) | 75 W |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm |
| Hộp | PG-TDSON-8 (5x6 mm) leadless |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C (junction) |
| Polarity | N-Channel enhancement mode |
| Automotive Qualification | AEC-Q100 (IAUC family) |
| Số chân | 8 |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IAUC100N04S6N022ATMA1
| Chân 1 | Gate — Gate drive input; apply V_GS = 10 V for full enhancement |
| Chân 2 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 3 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 4 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 5 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 6 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 7 | Drain — Drain terminal (electrically tied to thermal tab) |
| Chân 8 | Source — Source terminal (Kelvin source connection recommended for gate drive return) |
Khu vực hoạt động an toàn (DC, Tj=25C, VGS=10V)
Ứng dụng tiêu biểu
IAUC100N04S6N022ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V Brushed DC Motor Drive, Electronic Power Steering (EPS) System, Automotive Electric Water/Oil Pump Drive, 12V to 48V DC-DC Boost Converter (Automotive), Transmission Control Unit (TCU) Solenoid Drive, Industrial 24V Brushless DC (BLDC) Motor Drive.
Automotive 12V Brushed DC Motor Drive
The IAUC100N04S6N022ATMA1 is well matched to 12 V brushed DC motor drives for automotive body and chassis loads such as window lift, seat adjust, sunroof, and wiper motors. Its 100 A continuous drain current at Tc and 2.2 mOhm R_DS(on) at V_GS=10 V deliver low conduction loss on the high-side or low-side switch, while the AEC-Q100 qualification ensures operation across -40C to +125C ambient automotive temperature profiles. Placed between the 12 V battery rail and the motor winding with a gate driver supplying 10 V enhancement, the IAUC100N04S6N022 keeps I^2R dissipation low enough to avoid external heatsinking at 30-50 A RMS typical motor currents. Compared to relay-based solutions, the solid-state switching provides silent operation, longer mechanical life, and PWM speed control capability, while the 40 V V_DSS rating gives adequate transient margin against 24 V jump-start and inductive kick events.
Được đề xuất
Electronic Power Steering (EPS) System
The IAUC100N04S6N022ATMA1 fits the high-current PWM stages of 12 V electronic power steering (EPS) motor inverters where 40-80 A peak currents are common. Its 2.2 mOhm R_DS(on) and 100 A continuous rating provide the headroom needed for steering-assist torque transients without thermal shutdown, while the AEC-Q100 qualification satisfies the ISO 26262 functional-safety sourcing requirements for chassis-domain electronics. Used as a synchronous rectifier on the low-side of the buck stage or as the main inverter switch in a three-phase bridge, the IAUC100N04S6N022 reduces switching and conduction loss versus legacy OptiMOS-5 devices, directly improving EPS efficiency and reducing battery drain on stop-start vehicles. The PG-TDSON-8 footprint also enables compact PCB layouts inside the steering column housing.
Được đề xuất
Automotive Electric Water/Oil Pump Drive
Electric water pumps (EWPs) and electric oil pumps (EOPs) in modern ICE/hybrid powertrains require 20-60 A continuous switching at 12 V, with strict reliability targets because mechanical failure can lead to engine damage. The IAUC100N04S6N022ATMA1's 100 A continuous current rating and 2.2 mOhm R_DS(on) deliver ample thermal margin at 30 A typical pump current, while its AEC-Q100 grade supports the -40C to +125C under-hood ambient range. Mounted as the high-side switch between the 12 V rail and the pump motor, the IAUC100N04S6N022 enables PWM speed control for variable coolant/oil flow, reducing parasitic loss compared to fixed-speed mechanical pumps. The 40 V V_DSS rating also protects against alternator load-dump transients reaching 35 V on the 12 V bus.
Được đề xuất
12V to 48V DC-DC Boost Converter (Automotive)
In 48 V mild-hybrid automotive architectures, the IAUC100N04S6N022ATMA1 functions as the synchronous rectifier or main switch on the 12 V low-voltage side of a boost converter, where its 40 V V_DSS rating comfortably covers the 12 V rail plus transients. Its 2.2 mOhm R_DS(on) and 100 A current class support kilowatt-class power transfer at switching frequencies of 50-200 kHz, while the AEC-Q100 grade meets the automotive reliability bar for 48 V system components. The PG-TDSON-8 leadless package reduces parasitic source inductance, which improves switching loss and EMI compared to leaded DPAK alternatives. This makes the IAUC100N04S6N022 a strong fit for next-generation mild-hybrid DC-DC converters feeding the 48 V bus from the 12 V battery.
Được đề xuất
Transmission Control Unit (TCU) Solenoid Drive
Automatic transmission control units (TCUs) drive multiple proportional solenoids for shift valves and clutch pressure, with typical peak currents of 5-15 A per channel and a total system demand of 30-50 A. The IAUC100N04S6N022ATMA1's 100 A continuous drain rating allows a single MOSFET to multiplex multiple solenoid loads or serve as a master protection switch, while the 2.2 mOhm R_DS(on) minimizes voltage drop across the switch and preserves solenoid actuation accuracy. The AEC-Q100 grade and -55C to +175C junction temperature range meet the harsh under-hood environment, where transmission oil temperatures can reach 150C. The PG-TDSON-8 leadless footprint also enables SMT assembly compatible with the high-density TCU PCBs of modern 8-10 speed transmissions.
Được đề xuất
Industrial 24V Brushless DC (BLDC) Motor Drive
Although optimized for automotive, the IAUC100N04S6N022ATMA1's 40 V V_DSS and 100 A rating make it equally applicable to industrial 24 V BLDC motor drives in factory automation, robotics, and conveyor systems. Its 2.2 mOhm R_DS(on) at 10 V V_GS reduces I^2R loss in the inverter bridge, while the PG-TDSON-8 leadless footprint simplifies SMT assembly on high-volume automation control PCBs. Operating as a low-side switch in a three-phase inverter at 10-30 kHz PWM, the IAUC100N04S6N022 delivers high efficiency at 20-60 A RMS phase currents typical of small industrial BLDC motors. The wide -55C to +175C junction temperature range also supports operation in uncooled industrial cabinets. Note: in non-automotive designs the AEC-Q100 qualification becomes a beneficial bonus rather than a strict requirement.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC100N04S6N022ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC120N04S6N010ATMA1 | IAUC60N04S6L030HATMA1 | IPC100N04S5L1R5ATMA1 | BSC019N04LSTATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V_DSS (V) | 40 | 40 | 40 | 40 | 40 | 40 |
| R_DS(on) typ (mOhm) at V_GS=10V | 2.2 | 1.0 | 3.0 | 1.5 | 1.9 | 2.0 |
| Generation | OptiMOS 6 (S6) | OptiMOS 6 (S6) | OptiMOS 6 (S6) | OptiMOS-5 (S5) | OptiMOS-5 (S5) | OptiMOS-4 (S4) |
| AEC-Q100 Automotive Qualified | Yes (IAUC) | Yes (IAUC) | Yes (IAUC) | Yes (IPC) | No (BSC non-auto) | Yes (IPB) |
Bảo phân biệt quan trọng
- Latest OptiMOS 6 silicon with 2.2 mOhm R_DS(on) in PG-TDSON-8 (vsIPB100N04S4H2ATMA1 (OptiMOS-4))
- 100 A continuous current class for single-MOSFET motor drive (vsIAUC60N04S6L030HATMA1 (60 A class))
- AEC-Q100 IAUC automotive-grade quality level (vsBSC019N04LSTATMA1 (industrial BSC grade))
Ghi chú thiết kế
At I_D = 50 A continuous and V_GS = 10 V, conduction loss is approximately P = I^2 * R_DS(on) = 50^2 * 0.0022 = 5.5 W. With the PG-TDSON-8 package theta_JA in the 50-60 C/W range on a 1 sq-inch copper pad (Estimated: standard JEDEC 4-layer PCB, 1 oz copper, no heatsink), junction temperature rise is approximately 5.5 W * 55 C/W = 302 C above ambient. This is above the 175 C maximum junction rating, so a larger copper pad (>=2 sq-inch) or forced airflow is required. For sustained 100 A operation, Infineon recommends 4+ sq-inch of copper on the drain tab with a thermal via array under the package. Estimated: numbers derived from I^2R and standard thermal-resistance assumptions; verify against Infineon application note TN2018-01 for production designs.
The PG-TDSON-8 drain tab is electrically connected to the drain terminal. The PCB land pattern must include a large copper pour on the drain pad, with a thermal via array (>=9 vias, 0.3 mm drill, 1 mm pitch) to inner copper layers to reduce junction-to-ambient thermal resistance. The gate and source traces should be routed as a tight differential pair to minimize gate-loop inductance; excessive loop inductance causes ringing, EMI, and potential dv/dt-induced shoot-through. Place a 100 nF ceramic bypass capacitor between V_GS and the local source return within 5 mm of the gate pin to suppress gate-rail bounce during high-di/dt switching transitions. Source pin 8 should be used as the gate-driver return to avoid source-inductance-induced V_GS degradation at high di/dt.
Do not assume the IAUC100N04S6N022 is pin-compatible with TO-220, TO-252 (DPAK), or D2PAK footprints - PG-TDSON-8 (5x6 mm) is a different, smaller leadless package requiring its own PCB land pattern. Driving the gate with less than 8 V V_GS will operate the part in the linear region, causing high dissipation and possible thermal runaway - always use a gate driver capable of 10 V enhancement. The drain tab must be soldered to the PCB for proper thermal performance; dry-solder or insufficient paste on the thermal pad will cause thermal failure at high current. Do not parallel two IAUC100N04S6N022 units without gate-source resistor balancing and matched R_DS(on) binning, or current sharing will be uneven.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. AEC-Q100 qualified under the IAUC family designation for automotive use. Lead-free and halogen-free per JEDEC J-STD-020 MSL1 classification.
