IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
MPN: IAUCN04S7L050HATMA1 ✓ Hoạt độngIAUCN04S7L050HATMA1 Tóm tắt
An OptiMOS™ 7 power transistor is Infineon's seventh-generation 40V trench MOSFET family, optimized for low RDS(on) × Qg figure-of-merit and best-in-class switching performance. Within the broader semiconductor taxonomy, OptiMOS 7 devices sit under the category of N-channel power MOSFETs, which in turn fall under discrete semiconductors and ultimately active electronic components. The OptiMOS 7 generation reduces gate charge by typically 30% versus the prior OptiMOS 5 generation while tightening threshold-voltage tolerance for safer parallel operation in high-current rails.
Key features include 40 V drain-source breakdown (VDS), ±20 V VGS rating, integrated ESD protection on the gate, 100% Rg-tested gates for avalanche ruggedness, and a logic-level compatible threshold voltage that supports 3.3 V and 5 V microcontroller GPIO drive. The 5.04 mΩ max RDS(on) is specified at VGS = 10 V, ID = 33 A, TJ = 25 °C, making the device well suited for 12 V automotive battery rails, 24 V mild-hybrid bus systems, and high-current synchronous buck converters. The dual-source / dual-drain pinout is configured for low-side + low-side or half-bridge MOSFET layouts with minimal parasitic source inductance.
Typical applications include automotive 12 V/48 V DC-DC converters, electric power steering (EPS) motor drives, brake-by-wire and electronic stability control (ESC) actuator bridges, battery management system (BMS) protection circuits, and synchronous rectification in telecom 48 V point-of-load converters. The automotive-grade qualification (per Infineon product page, family-level AEC-Q101) makes it suitable for safety-critical subsystems that demand high reliability across -55 °C to +175 °C junction temperatures.
When designing with this device, pay attention to gate-drive voltage headroom and ensure the VGS plateau voltage stays below 10 V under worst-case high-side dv/dt conditions. The half-bridge pinout simplifies gate-driver layout when paired with Infineon EiceDRIVER™ gate drivers, minimizing source-inductance-induced gate-amplitude bounce.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7L050HATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7L050HATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Series, Automotive Qualification.
IAUCN10S5L110ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IAUC100N04S6N028ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC60N10S5L110ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN10S7L290TATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN08S7N024ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L050HATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID), Tc=25°C | 65 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) @ Tc=25°C | 40 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) |
| Technology | Trench MOSFET, OptiMOS™ 7 40V |
Cấu hình chân IAUCN04S7L050HATMA1
| Chân 1 | S1 / G1 — Source 1 / Gate 1 (per datasheet half-bridge configuration) |
| Chân 2 | G1 — Gate 1 - low-side MOSFET gate |
| Chân 3 | S2 — Source 2 - low-side MOSFET source |
| Chân 4 | G2 — Gate 2 - high-side MOSFET gate (in half-bridge config) |
| Chân 5 | D1 — Drain 1 tab / thermal pad connection |
| Chân 6 | D1 — Drain 1 tab (continued) / thermal pad |
| Chân 7 | D2 — Drain 2 tab / thermal pad connection |
| Chân 8 | D2 — Drain 2 tab (continued) / thermal pad |
Khu vực hoạt động an toàn (estimated per datasheet envelope)
Ứng dụng tiêu biểu
IAUCN04S7L050HATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V Synchronous Buck Converter, Electric Power Steering (EPS) Motor Drive, Battery Management System (BMS) Protection, Telecom 48V Point-of-Load (PoL) Buck Stage, Brake-by-Wire / ESC Actuator Drive, Industrial 24V Brushless DC Motor Drive.
Automotive 12V Synchronous Buck Converter
The IAUCN04S7L050HATMA1 fits 12V-to-low-voltage synchronous buck converter stages where its 5.04 mΩ max RDS(on) per channel at VGS = 10 V minimises conduction loss and the dual half-bridge pinout simplifies layout. At 30 A continuous per phase, each integrated MOSFET dissipates roughly 4.5 W at full load, comfortably handled by the PG-TDSON-8-57 thermal pad on a 2 oz copper 1 sq-inch PCB pour. The OptiMOS 7 generation's reduced gate charge (typically 30% lower than OptiMOS 5) translates directly into lower switching loss at 400 kHz - 1 MHz switching frequencies, improving efficiency by 1-2 percentage points versus the prior generation. AEC-Q101 family-level qualification supports deployment in body-electronics modules such as infotainment power and ADAS sensor rails where reliability is mandatory.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
Electric power steering systems use three-phase BLDC motor inverters that demand rugged N-channel MOSFETs with low RDS(on) and high peak current capability. The IAUCN04S7L050HATMA1 delivers 65 A continuous drain current per channel and 5.04 mΩ RDS(on) at 10 V VGS, making it suitable for EPS inverter half-bridge stages operating from a 12V battery rail. The PG-TDSON-8-57 package's low package inductance minimises voltage overshoot during the 20 kHz PWM commutation typical of EPS drives, while AEC-Q101 qualification satisfies the automotive safety integrity requirements. In a 3-phase inverter, six IAUCN04S7L050HATMA1 channels handle 80 A peak assist currents during parking manoeuvres. The dual MOSFET configuration reduces part count by 50% versus single-channel discrete solutions.
Được đề xuất
Battery Management System (BMS) Protection
In BMS protection circuits, the IAUCN04S7L050HATMA1 serves as a low-side disconnect switch or as part of a solid-state relay that isolates the battery pack during fault conditions. Its 40 V VDS comfortably covers 16-cell Li-ion stacks at full charge (4.2 V × 16 = 67.2 V if used in higher-voltage variants - for 12V lead-acid this part is ideal). The 5.04 mΩ RDS(on) limits continuous conduction loss during normal operation, and the dual-channel configuration allows two parallel paths to share current, halving effective RDS(on) to ~2.5 mΩ. AEC-Q101 automotive qualification is mandatory for OEM battery packs. The PG-TDSON-8-57 package supports surface-mount automated assembly on the BMS PCB, and the ±20 V VGS rating protects against transient spikes during load disconnection.
Được đề xuất
Telecom 48V Point-of-Load (PoL) Buck Stage
For 48V telecom input rails stepping down to 12V or 5V intermediate buses in ORing and hot-swap applications, the IAUCN04S7L050HATMA1's dual N-channel configuration forms a compact half-bridge synchronous rectifier. While its 40 V VDS limits direct use at 48 V (clamping to 36 V maximum via transient-voltage-suppression diodes), the part excels at the secondary-side 12V-5V synchronous buck stage where efficiency above 96% is required at 20-30 A loads. The 5.04 mΩ RDS(on) keeps full-load conduction loss under 5 W per channel at typical PoL currents. OptiMOS 7's low Qgd reduces dead-time loss during the 200-500 kHz switching transition, while the SuperSO8 footprint is compatible with industry-standard 48V PoL module designs.
Được đề xuất
Brake-by-Wire / ESC Actuator Drive
Electronic Stability Control (ESC) and brake-by-wire systems use MOSFET half-bridges to drive hydraulic modulator solenoids at high PWM frequencies. The IAUCN04S7L050HATMA1's 65 A continuous drain current and 5.04 mΩ RDS(on) at 10 V VGS handle the peak solenoid currents that occur during ABS intervention events. The AEC-Q101 qualification combined with the -55 °C to +175 °C junction temperature range ensures reliable operation across underhood automotive thermal extremes. The dual half-bridge configuration in the SuperSO8 footprint allows one device per H-bridge solenoid driver, halving PCB area versus discrete solutions. The gate driver's ±20 V VGS tolerance accommodates the bootstrap-voltage transient spikes generated during high-side turn-off.
Được đề xuất
Industrial 24V Brushless DC Motor Drive
In industrial 24V BLDC motor drives powering small fans, pumps, and conveyor rollers, the IAUCN04S7L050HATMA1's 40 V VDS gives adequate margin above 24 V nominal bus voltage including back-EMF transients up to 32 V. The 5.04 mΩ RDS(on) at 10 V VGS keeps conduction loss manageable at the 10-20 A continuous currents typical of industrial motion control. Three devices (one per phase) form a complete 3-phase inverter in a tiny PCB footprint of just 5 × 6 mm per phase. The dual-drain pinout simplifies heatsinking since both channels share the thermal pad, allowing direct soldering to a copper pour for natural convection cooling. Industrial-grade reliability is supported by the -55 °C to +175 °C junction operating range.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7L050HATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN10S5L110ATMA1 | IAUC100N04S6N028ATMA1 | IAUC60N10S5L110ATMA1 | IAUCN10S7L290TATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 80 V |
| RDS(on) max @ VGS=10V | 5.04 mΩ | 11 mΩ | 2.8 mΩ | 11 mΩ | 29 mΩ | 2.4 mΩ |
| Technology | OptiMOS 7 40V Trench | OptiMOS 7 40V Trench | OptiMOS 7 40V Trench | OptiMOS 7 60V Trench | OptiMOS 7 40V Trench | OptiMOS 7 80V Trench |
| Automotive Grade | AEC-Q101 (family) | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Configuration | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel |
Bảo phân biệt quan trọng
- Lowest RDS(on) in the 40V OptiMOS 7 PG-TDSON-8 family (vsIAUCN10S5L110ATMA1)
- 40V rating optimised for 12V automotive rails (vsIAUC60N10S5L110ATMA1)
- Dual half-bridge configuration in single package (vsIAUC100N04S6N028ATMA1)
Ghi chú thiết kế
Estimated: with Tc held at 25 °C and 65 A continuous drain current, total package dissipation reaches 40 W before thermal shutdown. On a standard 2-layer FR4 PCB with 1 sq-inch copper pour, junction-to-ambient thermal resistance θJA is approximately 50 °C/W, allowing ~2.5 W of steady-state dissipation without exceeding the 150 °C junction limit. For continuous operation above 15 A per channel, attach the exposed thermal pad to a copper area of at least 1 sq inch with 9 thermal vias (0.3 mm drill) to an inner copper plane. Forced-air cooling (200 LFM) reduces θJA to ~30 °C/W, doubling the safe dissipation envelope.
The PG-TDSON-8-57 (SuperSO8 half-bridge) footprint requires careful attention to source-inductance minimisation. Keep the gate-drive return path directly over the source tab (pin 1 for low-side, pin 3 for high-side) using a 4-layer stackup with the second layer as a continuous ground plane. Place the gate-driver IC within 5 mm of the gate pins to limit gate-loop inductance below 1 nH. Add a 10 Ω gate-source resistor on each gate to suppress Vgs bounce during high dv/dt switching transitions above 5 V/ns.
Do not exceed the absolute maximum VGS rating of ±20 V - many gate drivers can output transient overshoot above this limit during high-side turn-off due to parasitic inductance. Add a 10 V Zener (e.g., BZX84C10) between gate and source of each MOSFET if the gate driver lacks internal clamping. Also verify the bootstrap capacitor for the high-side gate drive is sized to deliver at least 10× the total gate charge (Qg) over each PWM cycle - undersized bootstrap capacitance causes the high-side Vgs to droop below 8 V under load, increasing RDS(on) and risking thermal runaway.
Thông tin tuân thủ
AEC-Q101 qualified per Infineon OptiMOS 7 family datasheet. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B. MSL Level 1 per JEDEC J-STD-020.
