IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
MPN: IAUC120N04S6L005ATMA1 ✓ Hoạt độngIAUC120N04S6L005ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is driven above its threshold voltage. Power MOSFETs sit within the broader power-semiconductor hierarchy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. They are the workhorse switching element in synchronous rectification, hot-swap, e-fuse, motor drive, and load-switch applications, where low conduction loss translates directly into higher system efficiency and smaller heatsinks.
Key features include 40 V drain-source breakdown (V_(BR)DSS), 120 A continuous drain current rating, 0.55 mΩ maximum on-resistance at VGS=10 V, and total gate charge (Qg) of 177 nC at VGS=10 V. The device uses trench-based OptiMOS 6 technology with an intrinsic body diode capable of supporting commutation transients, and is rated for operation from -55 °C to +175 °C junction temperature. The PG-TDSON-8-53 footprint is pin-to-pin compatible with the broader Infineon OptiMOS 5/6 40 V family.
The IAUC120N04S6L005ATMA1 leverages Infineon's latest OptiMOS 6 generation trench cell design to minimize both conduction loss (low R_DS(on)) and switching loss (moderate Qg with low Qgd/Qgs ratio). A 175 pF output capacitance C_oss and 11.2 nF C_iss enable fast switching transitions suitable for high-frequency (>500 kHz) synchronous buck and hard-switching topologies. The integrated gate-protection structure provides ±16 V VGS tolerance.
Typical applications include automotive 12 V battery switching, ECU power distribution, DC-DC converter synchronous rectification, motor drive half-bridges, USB-PD and e-fuse circuits, and hot-swap controllers. In automotive 12 V systems it can carry continuous currents well above 100 A with minimal conduction loss. Industrial applications include 24 V solar optimizers, battery management systems, and high-current point-of-load converters.
When designing with this MOSFET, carefully observe the maximum junction temperature of 175 °C and derate appropriately. The exposed pad must be soldered to a sufficiently large copper area (≥1 in² recommended) to keep RthJA within datasheet limits. A 10 Ω gate resistor plus a local 100 nF VDD bypass cap near the gate-driver supply is recommended to suppress parasitic ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, drawing on verified Infineon data and cross-brand parametric equivalents.
Bộ thay thế dễ dàng lắp đặt cho IAUC120N04S6L005ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC120N04S6L005ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Junction Temperature, MSL Level, Product Family.
IAUCN04S7L019ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6L039ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L032ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NVMFS5C430N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
PSMN1R0-40SSJ
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUC120N04S6L005ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IAUC120N04S6L005ATMA1 |
| Technology | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A (Tj) |
| Power Dissipation (PD, Tc=25°C) | 187 W |
| RDS(on) max at VGS=10 V | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | 0.85 mΩ |
| Gate-Source Voltage (VGS) | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Total Gate Charge (Qg) | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | 11.203 nF at 25 V |
| Output Capacitance (Coss) | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | 175 pF |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-53 (5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUC120N04S6L005ATMA1
| Chân 1 | S — Source |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate |
| Chân 5 | D — Drain (connected to exposed pad) |
| Chân 6 | S — Source |
| Chân 7 | S — Source |
| Chân 8 | S — Source |
Ứng dụng tiêu biểu
IAUC120N04S6L005ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12 V ECU Power Switching, Synchronous Rectification in DC-DC Converters, Hot-Swap and E-Fuse Controllers, Motor Drive Half-Bridges, Battery Management Systems (BMS) and Protection, USB-PD and High-Current Charging Ports.
Automotive 12 V ECU Power Switching
The IAUC120N04S6L005ATMA1 is purpose-built for 12 V automotive ECU power switching, where its 40 V VDS provides ample load-dump margin (12 V battery plus transient spikes up to 35 V) and its 120 A continuous rating comfortably handles inrush and steady-state currents. With 0.55 mΩ R_DS(on), the device dissipates only ~3.3 W at 80 A continuous, minimizing the heatsinking requirement in space-constrained ECUs. The AEC-Q101 automotive qualification satisfies OEM standards for under-hood and cabin-mounted controllers, including engine management, transmission, ADAS, and body control modules.
Được đề xuất
Synchronous Rectification in DC-DC Converters
The IAUC120N04S6L005ATMA1 serves as a synchronous low-side rectifier in 12 V-to-low-voltage buck converters delivering 30-100 A outputs. The 0.55 mΩ R_DS(on) dominates conduction loss, while the 177 nC Qg keeps switching loss modest at 400-700 kHz switching frequencies typical of automotive POL converters. Compared to a Schottky diode, the synchronous MOSFET configuration reduces rectifier losses by 60-80%, enabling higher power density and 95%+ efficiency in 12 V-to-5 V/3.3 V rails for ADAS processors and infotainment SoCs.
Được đề xuất
Hot-Swap and E-Fuse Controllers
The IAUC120N04S6L005ATMA1 acts as the series pass element in 12 V/24 V hot-swap and e-fuse circuits for server, telecom, and industrial power distribution. Its 0.55 mΩ R_DS(on) keeps insertion loss below 60 mV at 100 A, well within 100 mV OR-ing tolerance, while the 40 V VDS handles transient back-EMF from inductive loads. The 187 W power dissipation rating allows sustained 120 A operation with adequate PCB copper area. AEC-Q101 qualification also makes it suitable for hot-swap in automotive zonal architectures where it provides reverse-battery and over-current protection.
Được đề xuất
Motor Drive Half-Bridges
The IAUC120N04S6L005ATMA1 is well-suited for 12 V/24 V motor drive half-bridges in automotive cooling fans, water pumps, and seat actuators. Its 120 A continuous rating supports peak motor-startup currents up to 200 A for short durations within the SOA envelope, while the 175 °C junction temperature rating tolerates the thermal stress of PWM switching. The PG-TDSON-8-53 footprint allows compact half-bridge layouts with two MOSFETs per motor phase, minimizing loop inductance for clean switching waveforms.
Được đề xuất
Battery Management Systems (BMS) and Protection
In 12 V lead-acid or 48 V mild-hybrid BMS modules, the IAUC120N04S6L005ATMA1 functions as the precharge or disconnect MOSFET. Its 0.55 mΩ R_DS(on) limits continuous current-path loss to under 30 mV at 50 A, while its 120 A rating supports fault-current interruption. The AEC-Q101 qualification and -55 to +175 °C junction range make it robust against underhood temperature extremes. The 40 V VDS also tolerates jump-start transients up to 36 V without avalanche breakdown.
Được đề xuất
USB-PD and High-Current Charging Ports
The IAUC120N04S6L005ATMA1 protects automotive USB-PD and high-current charging ports as an e-fuse switch between the 12 V battery and the PD controller. Its 40 V rating handles load-dump and jump-start transients, and its 120 A continuous capability far exceeds the 5 A/100 W limits of USB-PD 3.1 EPR, providing substantial headroom for short-circuit protection. The 0.55 mΩ R_DS(on) minimizes voltage drop at 5 A, ensuring the connected device sees the full bus voltage. AEC-Q101 automotive grade satisfies OEM USB port requirements.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC120N04S6L005ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 | IAUC120N06S5L032ATMA1 | NVMFS5C430N | PSMN1R0-40SSJ |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | NXP Semiconductors |
| Package | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | TDSON-8 (5x6 mm) - same | LFPAK33 (TDSON-8 equiv.) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 60 A | 120 A | 100 A | 100 A |
| RDS(on) max at VGS=10 V | 0.55 mΩ | 1.0 mΩ | 0.85 mΩ | 3.2 mΩ | 1.0 mΩ | 1.0 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | onsemi trench | NXP NextPower |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Bảo phân biệt quan trọng
- Lowest R_DS(on) in the Infineon 40 V OptiMOS 6 5x6 TDSON family (vsIAUC60N04S6L039ATMA1)
- OptiMOS 6 generation balances low R_DS(on) with manageable gate charge (vsIAUCN04S7L019ATMA1)
- AEC-Q101 automotive-qualified with full PPAP documentation (vsPSMN1R0-40SSJ (NXP))
Ghi chú thiết kế
Estimated: At ID=120 A and RDS(on)=0.55 mΩ at 175 °C, conduction loss reaches ~12 W and steady-state junction temperature will rise above 175 °C without adequate copper cooling. For continuous operation above 80 A, the PCB must include a continuous copper pour of at least 1 in² on top + bottom layers directly under the exposed pad, ideally connected to inner copper planes through 9-12 thermal vias. Without this, thermal resistance θJA will exceed the datasheet's typical 50 °C/W figure and the part will desate or fail.
Gate-drive loop area must be minimized to avoid ringing and false triggering. Place a 10 Ω gate resistor as close as possible to pin 4 (G), and route the gate return directly to the source pins (1-3 or 6-8) with a short, wide trace rather than to the system ground. Add a 100 nF ceramic bypass capacitor immediately adjacent to the gate-driver supply pin and the IAUC120N04S6L005ATMA1 source pins to provide localized high-frequency decoupling for the gate-drive loop.
Do not exceed VGS=±16 V even transiently. Use a gate-driver with a 10-12 V gate drive supply and clamp with a 12 V Zener diode from gate-to-source for protection against ESD or load-dump-induced gate overvoltage. Also note that body-diode reverse recovery time on this OptiMOS 6 part is moderate; for hard-switched bridge topologies running above 100 kHz, add anti-parallel deadtime (≥100 ns) and consider an external SiC Schottky for bridge cross-conduction protection.
Estimated: For a 12 V-to-3.3 V synchronous buck running at 500 kHz with 50 A output, the low-side IAUC120N04S6L005ATMA1 incurs conduction loss of 0.55 mΩ × (50 A)² × 0.5 duty = ~0.7 W plus switching loss of 0.5 × VDS × ID × (Qg/VGS) × fsw ≈ 0.5 × 12 × 50 × (177 nC / 10) × 500 kHz ≈ 2.7 W. Total ~3.4 W per device. Choose the IAUC120N06S5L032ATMA1 if a higher VDS margin is needed, or the IAUCN04S7L019ATMA1 if Qg matters more than absolute R_DS(on).
Thông tin tuân thủ
AEC-Q101 automotive-qualified per Infineon product page. RoHS and lead-free per JLCPCB listing (C3278713). Halogen-free status not explicitly stated in the verified web data - marked unknown.
