IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
MPN: IAUC120N04S6L009ATMA1 ✓ Hoạt độngIAUC120N04S6L009ATMA1 Tóm tắt
Background: A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that regulates current flow between drain and source terminals. OptiMOS-6 is Infineon's sixth-generation 40 V trench MOSFET platform optimized for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit. Within the broader taxonomy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. In modern 12 V/24 V automotive and industrial systems, low-R<sub>DS(on)</sub> 40 V N-channel MOSFETs sit at the lowest level of the power-conversion hierarchy, immediately driving solenoids, motors, and synchronous-rectifier stages.
Key features of the IAUC120N04S6L009ATMA1 include 0.9 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level compatible V<sub>GS(th)</sub> suitable for direct GPIO drive from microcontrollers, 150 A pulsed drain current capability, and an operating junction temperature range of -55 °C to +175 °C. The leadless PG-TDSON-8-34 package provides a very low package resistance and inductance contribution and a top-side exposed pad for efficient PCB thermal spreading.
Typical applications span 12 V/24 V automotive high-current switching - including electronic power steering (EPS), brake-by-wire electro-hydraulic actuators, fuel-injection solenoids, and high-current DC/DC converters for 48 V-to-12 V or 24 V-to-12 V rails. The very low R<sub>DS(on)</sub> directly translates into reduced conduction loss, lower junction temperature rise, and therefore higher continuous current capability on the same PCB footprint.
When designing with this part, the V<sub>GS</sub> drive level must be considered - the maximum R<sub>DS(on)</sub> is specified at V<sub>GS</sub>=10 V, and the device remains fully enhanced at logic levels near 4.5 V. Designers should also observe the safe operating area boundary to avoid exceeding avalanche energy during turn-off of inductive loads. This page synthesizes distributor pricing, automotive-grade alternatives, and practical design considerations that are not compiled on a single manufacturer page.
This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone. AEC-Q101 qualification, PG-TDSON-8-34 footprint, and 40 V / 120 A headline ratings are sourced from the manufacturer product page and authorized distributor listings.
Bộ thay thế dễ dàng lắp đặt cho IAUC120N04S6L009ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC120N04S6L009ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Automotive Qualification, Operating Junction Temperature, MSL Level.
IAUC120N04S6L005ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L032ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L019ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6L039ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6L009ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-6 40V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 8 |
| AEC-Q101 Automotive Qualification | Yes |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUC120N04S6L009ATMA1
| Chân 1 | Gate — Gate input - drive with 10 V for full enhancement, logic-level compatible |
| Chân 2 | Source — Source connection (low-side return) |
| Chân 3 | Source — Source connection (low-side return) |
| Chân 4 | Drain — Drain connection (load side) |
| Chân 5 | Drain — Drain connection (load side) |
| Chân 6 | Drain (Exposed Pad) — Drain and thermal pad - solder to PCB copper pour for thermal dissipation |
| Chân 7 | Source — Source connection (low-side return) |
| Chân 8 | Source — Source connection (low-side return) |
Khu vực hoạt động an toàn - DC
Ứng dụng tiêu biểu
IAUC120N04S6L009ATMA1 phù hợp cho 6 Áp dụngs: Automotive Electronic Power Steering (EPS), 12 V/24 V Automotive Solenoid and Relay Drive, High-Current 24 V to 12 V DC-DC Buck Converter, Automotive Braking System Actuator Drive, Industrial 24 V Brushless DC Motor Drive, Automotive LED Headlight Driver Output Stage.
Automotive Electronic Power Steering (EPS)
The IAUC120N04S6L009ATMA1 fits EPS motor-drive stages because it delivers 120 A continuous drain current with 0.9 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, directly reducing I²R conduction loss in the high-side and low-side FETs of the H-bridge. With 40 V V<sub>DS</sub> the part provides comfortable margin above the 35 V worst-case 12 V load-dump transient, and AEC-Q101 qualification is mandatory for safety-relevant steering. Compared with discrete 30 mΩ FETs, the IAUC120N04S6L009ATMA1 cuts conduction loss ~30x at 100 A PWM duty, allowing smaller heatsinking or higher continuous torque. Recommended companion parts: gate-driver ICs and TVS suppression for inductive clamp.
Được đề xuất
12 V/24 V Automotive Solenoid and Relay Drive
Solenoid drivers for transmission shift solenoids, fuel injectors, and active suspension valves benefit from the IAUC120N04S6L009ATMA1's low 0.9 mΩ R<sub>DS(on)</sub> and 150 A pulsed drain current rating. The 40 V V<sub>DS</sub> rating tolerates 24 V bus load-dump transients up to 35 V with proper TVS clamping, and the PG-TDSON-8-34 5x6 mm footprint enables compact PCB designs. Logic-level V<sub>GS(th)</sub> permits direct drive from 3.3 V or 5 V microcontrollers through a small gate-driver stage, eliminating the need for charge pumps. Use a flyback diode or active clamp across the solenoid to dissipate inductive turn-off energy within the FET's SOA.
Được đề xuất
High-Current 24 V to 12 V DC-DC Buck Converter
In 24 V-input buck converters targeting 12 V/20 A output rails, the IAUC120N04S6L009ATMA1 is suitable as the high-side control FET because its 40 V V<sub>DS</sub> provides margin above 24 V nominal plus switching spikes, and 0.9 mΩ R<sub>DS(on)</sub> keeps conduction loss below 1% of total power at full load. The PG-TDSON-8-34 5x6 mm package with exposed thermal pad allows direct PCB heat spreading without external heatsinks at moderate duty cycles. Compared with conventional 40 V MOSFETs at 3 mΩ, this part reduces full-load losses by ~70%, simplifying thermal design. Pair with a dedicated 40 V synchronous rectifier for the low-side position.
Được đề xuất
Automotive Braking System Actuator Drive
Brake-by-wire electro-hydraulic actuators and ABS pump motors require MOSFETs that combine high continuous current, low conduction loss, and AEC-Q101 qualification - all met by the IAUC120N04S6L009ATMA1. Its 0.9 mΩ R<sub>DS(on)</sub> minimises I²R loss at 60-80 A continuous ABS pump currents, while the 150 A pulsed rating handles motor inrush and stall currents without tripping SOA. The -55 °C to +175 °C junction temperature range covers underhood environments, and the 5x6 mm TDSON package keeps the PCB footprint compact for ECU integration. Always add a TVS clamp across the motor terminal to clamp recirculation energy during PWM switching.
Được đề xuất
Industrial 24 V Brushless DC Motor Drive
Outside automotive, the IAUC120N04S6L009ATMA1 also fits industrial 24 V BLDC motor drives such as robotics actuators and small AGV wheel motors. With 120 A continuous current and 0.9 mΩ R<sub>DS(on)</sub>, three-phase inverters built around this part can deliver 5-10 kW continuous mechanical output on a 24 V bus. The 40 V V<sub>DS</sub> rating tolerates 24 V rectified plus switching transients, while logic-level gate threshold allows direct 3.3 V MCU drive through a gate driver. Designers should add bootstrap capacitors for the high-side FETs and a current-sense amplifier on the low-side return path for closed-loop torque control.
Được đề xuất
Automotive LED Headlight Driver Output Stage
High-power automotive LED headlight drivers use synchronous buck or boost topologies where the IAUC120N04S6L009ATMA1's 0.9 mΩ R<sub>DS(on)</sub> and 40 V V<sub>DS</sub> are ideal for the main switching FET. With 120 A continuous current and AEC-Q101 qualification, the same part can drive the high-current LED string or the buck-side FET in a 12 V-to-9 V 10 A LED driver. Compared with 5 mΩ FETs, the IAUC120N04S6L009ATMA1 cuts switching loss ~5x at full load, improving overall efficiency and reducing headlight thermal load. Add a temperature sensor and current-sense amplifier for closed-loop brightness control.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC120N04S6L009ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC120N04S6L005ATMA1 | IAUC120N06S5L032ATMA1 | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same |
| V_DS (V) | 40 | 40 | 60 | 40 | 40 |
| R_DS(on) max @ 10V (mΩ) | 0.9 | 0.5 | 3.2 | 1.9 | 3.9 |
| Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 | OptiMOS-6 |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest R<sub>DS(on)</sub> at 120 A in the Infineon 40 V OptiMOS-6 5x6 mm family (vsIAUC60N04S6L039ATMA1)
- Lower R<sub>DS(on)</sub> than L005 in cost-optimised designs (vsIAUC120N04S6L005ATMA1)
- Automotive-grade OptiMOS-6 technology with proven AEC-Q101 reliability (vsIAUCN04S7L019ATMA1 (OptiMOS-7))
Ghi chú thiết kế
Estimated: at continuous I<sub>D</sub>=60 A on a 4-layer 1 oz PCB with 4 sq-in copper pour, the IAUC120N04S6L009ATMA1 dissipates P=I²R = 60² × 0.0009 = 3.24 W, giving a junction-to-ambient rise of roughly 35-50 °C depending on PCB layout. To sustain the full 120 A continuous rating the design must add a forced-air cooling or large copper pour (>= 8 sq-in). Never exceed 150 W at T<sub>C</sub>=25 °C - the system thermal design must keep T<sub>C</sub> well below 100 °C for AEC-Q101 reliability margin.
Layout the PG-TDSON-8-34 with the bottom exposed pad (pin 6, drain) soldered to a continuous copper pour on the top and inner PCB layers, stitched with multiple thermal vias (>= 9 vias, 0.3 mm drill) to inner copper planes. Keep the high-current drain trace short and wide (>5 mm) to minimise parasitic inductance that would otherwise cause V<sub>DS</sub> overshoot during turn-off. Place the gate-driver within 5 mm of the gate pin to limit gate-loop inductance, which is critical for clean switching at 100 kHz+ PWM frequencies.
Do not assume 0.9 mΩ R<sub>DS(on)</sub> is achieved at logic-level V<sub>GS</sub>=3.3 V - the datasheet R<sub>DS(on)</sub> spec uses V<sub>GS</sub>=10 V, and at 4.5 V the on-resistance is significantly higher. Always drive the gate to 10 V for full enhancement; use a gate-driver IC rather than direct GPIO drive to ensure fast switching and avoid shoot-through in half-bridge configurations. Add a TVS clamp (e.g., 36 V SMAJCA series) for 24 V load-dump protection - the 40 V V<sub>DS</sub> alone is not enough margin under worst-case transients.
Place a 10 kΩ gate-source pull-down resistor to keep the gate off during MCU power-up or reset - this prevents inadvertent turn-on from floating gate leakage. For half-bridge configurations use a dedicated gate-driver IC with built-in dead-time control to prevent shoot-through between high-side and low-side FETs. For switching frequencies above 50 kHz, add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source to damp V<sub>DS</sub> ringing caused by package + PCB parasitic inductance.
Thông tin tuân thủ
AEC-Q101 (NOT AEC-Q100) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free status not explicitly stated in provided web data - mark unknown per data authenticity rules.
