IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN04S7L019ATMA1 ✓ Hoạt độngIAUCN04S7L019ATMA1 Tóm tắt
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs require a positive gate-to-source voltage to turn on and are the dominant low-side/high-side switch topology in power electronics. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → power transistors, and the OptiMOS™ 7 family represents Infineon's latest-generation TrenchFET cells optimized for lowest figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub>.
Key features include an ultra-low 1.91 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, an automotive-grade AEC-Q101 qualification, a logic-level compatible gate threshold, and an exposed-drain PG-TDSON-8-33 package that delivers a thermal resistance on the order of a single-digit °C/W to the PCB copper. The OptiMOS™ 7 cell geometry reduces switching losses by approximately 30% versus the previous OptiMOS™ 5 generation while halving R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit.
Typical applications include brushless DC motor drives (BLDC) in electric vehicle auxiliaries, e-scooter and e-bike motor controllers, high-current synchronous buck converters for 12 V/24 V automotive rails, battery protection and load switching in 12 V lead-acid and Li-ion systems, and USB-PD / high-current Type-C power paths. The 120 A continuous current rating comfortably covers 100 A-class automotive e-fuse and motor-phase designs.
When designing with this part, verify that V<sub>DS</sub> transient ringing under hard-switching stays below 40 V at minimum load, and place the gate driver within 10 mm of the gate pin to suppress parasitic turn-on. For multi-MOSFET parallel configurations, gate-source resistors of 10-100 Ω per device are recommended for dynamic current balancing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers an at-a-glance decision tool for selecting or replacing the IAUCN04S7L019ATMA1 in automotive power designs.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7L019ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7L019ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Junction Temperature, Drain-Source Voltage (VDS), Automotive Qualification.
IAUC60N04S6L039ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0901NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC032N04LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC059N04LS6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L019ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ |
| Hộp | PG-TDSON-8-33 |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -55°C to +175°C (junction) |
| Automotive Qualification | AEC-Q101 qualified |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Packaging | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | 5000 pieces |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") |
Cấu hình chân IAUCN04S7L019ATMA1
| Chân 1 | Source — Source (low-side connection) |
| Chân 2 | Source — Source (low-side connection) |
| Chân 3 | Source — Source (low-side connection) |
| Chân 4 | Gate — Gate (drive input) |
| Chân 5 | Source — Source (low-side connection) |
| Chân 6 | Source — Source (low-side connection) |
| Chân 7 | Source — Source (low-side connection) |
| Chân 8 | Drain — Drain (high-side connection) |
| Chân EP | Drain (Exposed Pad) — Drain thermal pad (PCB copper heatsink) |
Khu vực hoạt động an toàn (DC, T<sub>C</sub>=25°C)
Ứng dụng tiêu biểu
IAUCN04S7L019ATMA1 phù hợp cho 6 Áp dụngs: Automotive BLDC Motor Drive, E-Mobility Motor Controller (E-scooter, E-bike), 12 V / 24 V Synchronous Buck Converter, Automotive Battery Protection & E-Fuse, USB Type-C Power Delivery / Hot-Swap, Industrial High-Current Load Switch.
Automotive BLDC Motor Drive
The IAUCN04S7L019ATMA1 is purpose-built for automotive brushless DC (BLDC) motor drive half-bridge and three-phase inverter topologies at 12 V and 24 V bus levels. Its 120 A continuous drain current rating covers 50-100 A class motor-phase currents typical of electric power steering, electric water pumps, oil pumps, HVAC blowers, and engine cooling fans. The 1.91 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps conduction dissipation to roughly 19 W at 100 A, while the AEC-Q101 qualification and PG-TDSON-8-33 exposed thermal pad enable direct PCB copper heatsinking without external heatsinks in the 5-15 kW power range. Infineon's OptiMOS™ 7 cell geometry reduces switching losses ~30% versus OptiMOS™ 5, supporting 20-50 kHz PWM operation for low-torque-ripple sinusoidal commutation.
Được đề xuất
E-Mobility Motor Controller (E-scooter, E-bike)
The IAUCN04S7L019ATMA1 delivers excellent performance in e-motorcycle, e-scooter, and e-bike traction motor controllers running from 36 V or 48 V Li-ion battery packs. The 40 V V<sub>DS</sub> rating provides adequate transient margin for 12S (43.2 V max) Li-ion configurations with inductive ringing. At 60 A peak phase current the device dissipates only 6.9 W per MOSFET, allowing six-MOSFET three-phase designs to fit compact PCB footprints under 50 mm×50 mm. AEC-Q101 stress testing ensures the part survives under-seat vibration, thermal cycling, and humidity typical of personal e-mobility. The PG-TDSON-8-33's exposed pad supports bottom-side cooling via the PCB copper pour, eliminating discrete heatsinks for lower BOM cost.
Được đề xuất
12 V / 24 V Synchronous Buck Converter
In 12 V to 24 V input synchronous buck converters delivering 20-60 A output current, the IAUCN04S7L019ATMA1 serves as the low-side synchronous rectifier MOSFET to maximize efficiency at high duty cycles. The 1.91 mΩ R<sub>DS(on)</sub> keeps synchronous-rectifier conduction loss comparable to or lower than the high-side switch, while the OptiMOS™ 7 low Q<sub>g</sub> enables sub-100 ns dead-time transitions for minimum body-diode loss. The 40 V V<sub>DS</sub> comfortably handles 24 V industrial bus transients up to 36 V clamped. Designers can pair this part with a complementary high-side 40 V OptiMOS™ device or use it as both switches in 12 V-input point-of-load converters for FPGA core rails.
Được đề xuất
Automotive Battery Protection & E-Fuse
The IAUCN04S7L019ATMA1 functions as the main disconnect switch in 12 V and 24 V automotive battery protection units and solid-state e-fuse designs. Its 120 A continuous rating covers the typical 100-200 A fuse rating of auxiliary 12 V batteries, while the 1.91 mΩ R<sub>DS(on)</sub> limits voltage drop to <200 mV at 100 A load. The AEC-Q101 qualification ensures the part survives automotive underhood thermal cycling from -40°C to +125°C. The PG-TDSON-8-33 footprint integrates a thermal pad for direct PCB copper heatsinking, essential during 1-10 ms short-circuit interruption events where I²R heating can exceed 10 kW momentarily.
Được đề xuất
USB Type-C Power Delivery / Hot-Swap
The IAUCN04S7L019ATMA1 is ideal for 12 V automotive USB Type-C Power Delivery (PD) hot-swap and load-switch applications where 5 A continuous and 100 W peak power delivery is required. The 40 V V<sub>DS</sub> rating supports 12 V automotive battery hot-swap transients, while the low 1.91 mΩ R<sub>DS(on)</sub> minimizes insertion loss for USB-PD 3.1 EPR 28 V/36 V/40 V modes when properly derated. The PG-TDSON-8-33's small footprint (5 mm×6 mm) enables compact in-cabin USB Type-C port modules. Infineon's OptiMOS™ 7 cell also delivers low Q<sub>gd</sub>/Q<sub>gs</sub> ratio for clean dV/dt immunity during hot-plug events.
Được đề xuất
Industrial High-Current Load Switch
Beyond automotive, the IAUCN04S7L019ATMA1 is suitable for industrial 24 V high-current load switches, robotic motor drives, and factory automation power distribution where 100 A+ switching is required. The 40 V V<sub>DS</sub> covers 24 V industrial bus with transient headroom, while the 120 A continuous rating supports 50-100 A typical industrial motor and solenoid loads. The exposed thermal pad of PG-TDSON-8-33 enables direct PCB heatsinking in IP65 sealed enclosures where external heatsinks are impractical. Designers can pair this MOSFET with isolated gate drivers such as the BTT3050EJXUMA1 for high-side or low-side switching up to 100 kHz PWM operation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7L019ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC60N04S6L039ATMA1 | BSC027N04LSGATMA1 | BSC0901NSATMA1 | BSC032N04LSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) |
| Family | OptiMOS™ 7 | OptiMOS™ 6 | OptiMOS™ 5 | OptiMOS™ | OptiMOS™ 5 |
| V<sub>DS</sub> Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current | 120 A | 60 A | 85 A | 100 A | 85 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | 3.9 mΩ | 2.7 mΩ | 9.0 mΩ | 3.2 mΩ |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Lowest R<sub>DS(on)</sub> in Infineon 40V OptiMOS PG-TDSON-8-33 family (vsBSC0901NSATMA1)
- Latest-generation OptiMOS™ 7 cell technology with lowest figure-of-merit (vsIAUC60N04S6L039ATMA1)
- Higher continuous drain current rating (120 A) than closest alternative (vsBSC027N04LSGATMA1)
- AEC-Q101 automotive qualified with full PPAP traceability (vsIndustrial-grade 40V N-MOSFETs)
Ghi chú thiết kế
Estimated: at 100 A continuous drain current and 1.91 mΩ R<sub>DS(on)</sub>, conduction loss is P = I²R = 100² × 0.00191 = 19.1 W. With PG-TDSON-8-33 R<sub>thJA</sub> of approximately 40°C/W on a 1 oz 4-layer PCB with 1 sq-inch copper pour, junction temperature rise is ~40°C/W × 19.1 W = 764°C above ambient - clearly above the 175°C max. Practical conclusion: continuous 100 A operation requires significant copper area (>=4 sq-inch on top + bottom layers), thermal vias to inner copper planes, or forced-air cooling. For 50 A continuous, the same PCB heatsink design is adequate with margins.
Place the gate driver within 10 mm of the IAUCN04S7L019ATMA1 gate pin to minimize parasitic gate-loop inductance (target L<sub>g</sub> <5 nH). Add a 10 Ω gate-source resistor directly across gate-source pins to suppress parasitic turn-on from dV/dt coupling. Use a kelvin-source connection when the package exposes a separate source-sense pin; the PG-TDSON-8-33 typically uses pins 1-3,5-7 as source with gate at pin 4. Place input/output bulk capacitors within 5 mm of drain/source pads to reduce switching-loop inductance below 2 nH.
Do not exceed V<sub>DS</sub>=40 V under any transient condition including avalanche; clamp inductive loads with TVS diodes or RCD snubbers rated for the energy. Verify that V<sub>GS</sub> stays within the absolute maximum rating of ±20 V - gate-drive spikes from parasitic inductance can exceed this during hard switching. For parallel-MOSFET configurations, use individual gate-source resistors (10-100 Ω) per device for dynamic current sharing; do not rely solely on R<sub>DS(on)</sub> matching which has ±30% part-to-part variation. Always check SOA curves for pulsed operation at elevated case temperature.
The PG-TDSON-8-33 exposed thermal pad requires thermal vias (typically 9-16 vias of 0.3 mm drill on 1.0 mm pitch) to inner copper planes for effective heat spreading. Use 1 oz copper on outer layers minimum, with 2 oz preferred for high-current designs. The land pattern should follow JEDEC MO-240 for PG-TDSON-8-33 (5 mm × 6 mm body). Keep high-current traces wide (>2 mm per 10 A) and use multiple vias in parallel for current transitions between layers. Creepage distance from drain to source on the PCB should be at least 2 mm for 40 V rating per IPC-2221.
For high-frequency switching (>50 kHz) in synchronous buck or BLDC applications, the IAUCN04S7L019ATMA1's low Q<sub>g</sub> enables fast turn-on/turn-off transitions but generates high dV/dt (>5 kV/µs) at the phase node. This can couple into adjacent signals via parasitic capacitance. Maintain >5 mm spacing between the phase-node copper and any low-level analog signal traces. Add a small RC snubber (1-10 Ω + 1-10 nF) across drain-source if EMI is excessive. Use a gate-drive pull-down resistor of 10 kΩ to ensure the MOSFET stays off during controller reset or power-up.
Thông tin tuân thủ
AEC-Q101 (automotive discrete semiconductor) qualified per Infineon OptiMOS™ 7 datasheet. RoHS and REACH compliant. Lead-free reflow compatible. Halogen-free per industry-standard test methods.
