IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
MPN: IAUCN04S7N056DATMA1 ✓ Hoạt độngIAUCN04S7N056DATMA1 Tóm tắt
A power MOSFET is a voltage-controlled three-terminal (gate, drain, source) semiconductor switch that uses an insulated-gate structure to modulate majority-carrier current flow. It belongs to the discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> power switch. Unlike bipolar transistors, the MOSFET gate draws negligible DC current, making it easy to drive from logic-level signals, microcontroller PWM outputs or dedicated gate drivers, while achieving fast switching edges that minimize transition losses.
Key features of the IAUCN04S7N056DATMA1 include a very low R DS(on) of 5.59 mΩ typical, gate charge optimized for high-frequency DC-DC conversion, a 175°C maximum operating junction temperature, and an automotive-grade qualification. The 5x6 mm TDSON-8-61 footprint uses an exposed drain pad that serves as both thermal pad and second source connection, keeping the package outline compact while providing a low thermal resistance path.
The OptiMOS 5 process technology uses a trench-gate structure with a refined cell pitch to balance conduction loss against switching loss, making this part well suited to high-current synchronous rectification in 12 V automotive electrical systems and high-side/low-side buck converters. With its 5.6 mΩ typical on-resistance, the device can carry tens of amps continuously while keeping conduction losses to a few watts at typical loads.
Typical applications include 12 V automotive load switching, high-current DC-DC synchronous buck converters, brushed and BLDC motor drive half-bridges, e-fuse and power-distribution switches, and high-current OR-ing / battery-disconnect circuits. The AEC-Q101 qualification makes it suitable for under-hood and chassis electronics exposed to wide temperature swings.
When designing with this part, ensure the gate drive reaches at least 10 V (VGS(th) is in the 2-3 V range; full enhancement requires more) to achieve the datasheet R DS(on). Keep the gate-drive loop area minimal and place a 1 nF-10 nF gate-to-source resistor close to the IC to suppress ringing and prevent inadvertent turn-on from drain dv/dt coupling through C gd.
This page synthesizes distributor pricing, AEC-Q101 qualifications, and practical design notes for the Infineon IAUCN04S7N056DATMA1 N-channel MOSFET that are not collated in a single manufacturer datasheet excerpt.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7N056DATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7N056DATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Mounting Type, Automotive Qualification, MSL Level.
IAUCN04S7N037GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L042GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L050HATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N019GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N027GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N010ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N056DATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 |
| Series | OptiMOS 5 40V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 60 A (Tj) |
| RDS(on) (typ) | 5.59 mΩ |
| Power Dissipation (Pd) | 41 W (Tc) |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Hộp | PG-TDSON-8-61 (TDSON EP, 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS 5 trench MOSFET |
| Trạng thái RoHS | Compliant |
| Packaging Type | Tape & Reel |
Cấu hình chân IAUCN04S7N056DATMA1
| Chân 1 | Source — Source connection (Sense/source pin) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
| Chân EP | Drain — Exposed pad - Drain connection and main thermal path |
Khu vực hoạt động an toàn (DC, Tj=175°C)
Ứng dụng tiêu biểu
IAUCN04S7N056DATMA1 phù hợp cho 6 Áp dụngs: 12V Automotive Load Switching, Synchronous Buck DC-DC Converter, BLDC Motor Drive Half-Bridge, Battery Disconnect / OR-ing Switch, Hot-Swap / Inrush Limiting, Power Distribution Module / eFuse.
12V Automotive Load Switching
The IAUCN04S7N056DATMA1 is well matched to 12 V automotive load switching thanks to its 40 V VDS rating, which provides comfortable transient headroom for 12 V bus spikes and load-dump events up to 35 V. With 60 A continuous current and 5.59 mΩ R DS(on), it can drive resistive loads, lamps, and small motors directly from a microcontroller GPIO through a gate driver. The AEC-Q101 qualification is required for under-hood ECUs, body controllers, and PDMs. Place a 100 kΩ gate pull-down to keep the device off during MCU reset, and use a TVS or snubber to clamp inductive transients within the 40 V VDS rating.
Được đề xuất
Synchronous Buck DC-DC Converter
In a 12 V-to-3.3 V/5 V synchronous buck converter the IAUCN04S7N056DATMA1 serves as the low-side synchronous rectifier. Its 5.59 mΩ R DS(on) at VGS=10 V gives conduction losses around 0.5 W at 30 A, and the OptiMOS 5 trench technology delivers low Qg and Qgd for fast switching at 200-500 kHz. The 5x6 mm TDSON-8-61 footprint with an exposed drain pad simplifies PCB layout for direct thermal coupling to inner copper layers. Use a dedicated gate driver such as the 2EDL series to provide the >10 V drive and to prevent shoot-through by enforcing dead time. For a 600 kHz design the switching loss is dominated by Qg, so this part is a good fit at moderate frequencies.
Được đề xuất
BLDC Motor Drive Half-Bridge
For automotive or industrial brushless-DC motor drives the IAUCN04S7N056DATMA1 functions as a high-current switching element in a three-phase half-bridge. With 60 A continuous and 41 W power dissipation at TC=25°C, it can drive mid-power BLDC motors up to about 1-2 kW with adequate heatsinking. The low Qg of the OptiMOS 5 platform keeps gate-driver losses low at 20-50 kHz PWM, and the 175°C junction rating provides safety margin for short stall conditions. Use a bootstrap-based gate driver such as the IRS21867STRPBF or 2ED21064S06JXUMA1, and place a 1-10 nF gate-source resistor to suppress ringing.
Được đề xuất
Battery Disconnect / OR-ing Switch
The IAUCN04S7N056DATMA1 can be used as a low-side or high-side OR-ing / battery disconnect switch in redundant 12 V or 24 V power systems. Its 5.59 mΩ R DS(on) at full VGS gives <0.6 V drop at 100 A, and the AEC-Q101 qualification is appropriate for automotive e-fuse and power-distribution units. The 40 V VDS rating covers load-dump transients. Drive the gate from a charge pump or bootstrap supply to maintain full enhancement during on-state; for fast reverse-current blocking, add a comparator that monitors VDS and turns the MOSFET off within microseconds. A small TVS across drain-source protects against turn-off transients.
Được đề xuất
Hot-Swap / Inrush Limiting
In a 12 V hot-swap controller the IAUCN04S7N056DATMA1 acts as the series load switch that limits inrush current when a downstream card is plugged into a live backplane. Its 5.59 mΩ R DS(on) keeps the steady-state voltage drop low, while the 40 V VDS rating tolerates the inductive ringing of connector engage. The exposed pad is essential for sinking the inrush dissipation, which can be tens of watts for tens of milliseconds. Choose a hot-swap controller with a dV/dt-controlled gate ramp to avoid SOA violations. The AEC-Q101 grade is also valued in telco and industrial cards where high-availability and thermal stress are concerns.
Được đề xuất
Power Distribution Module / eFuse
In a smart e-fuse or solid-state circuit breaker the IAUCN04S7N056DATMA1 is the main pass element. With 60 A continuous and AEC-Q101 automotive qualification, it can replace mechanical fuses in PDMs and battery junction boxes. The 40 V VDS comfortably covers 12 V bus transients. A current-sense amplifier monitors drain current and triggers a fast gate pull-down on overcurrent, achieving microsecond-class fault isolation. The exposed drain pad dissipates fault energy for the brief interval before the controller disconnects the gate, so PCB copper area must be sized for the I²t of the trip curve.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7N056DATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-61 (5x6 mm) | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same |
| VDS (max) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) (typ) | 5.59 mΩ | 3.7 mΩ (-34%) | 4.2 mΩ (-25%) | 5.0 mΩ (-11%) | 1.9 mΩ (-66%) | 2.7 mΩ (-52%) | 1.0 mΩ (-82%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 5 40V trench | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V |
Bảo phân biệt quan trọng
- Lower RDS(on) at the same package size vs standard 40V TDSON-8-61 alternatives (vsIAUCN04S7L050HATMA1)
- AEC-Q101 qualified automotive grade at a competitive price point (vsCross-brand 40V N-channel MOSFETs)
- Exposed-drain TDSON-8-61 package simplifies heatsink and PCB layout (vsDPAK alternatives)
Ghi chú thiết kế
Estimated: at 30 A continuous load on a 1 oz copper 4-layer PCB with 1 sq. inch of 2-oz top-copper area as heatsink, the IAUCN04S7N056DATMA1 dissipates I²×RDS(on) ≈ 30²×5.59 mΩ ≈ 5 W. With a typical 50°C/W RthJA on a moderate copper area, junction temperature rise is ~50°C×5 W = 25°C above ambient, keeping Tj well under the 150°C automotive derating limit. For continuous operation above 35 A, increase the 2-oz copper area to at least 2 sq. inches, or add a small heatsink to the exposed drain pad. The 41 W power dissipation is the absolute maximum at TC=25°C and is only achievable with the package case held at 25°C - not realistic in most real-world applications.
Place the IAUCN04S7N056DATMA1 with a 4x4 thermal-via array (0.3 mm via, 1 mm pitch) directly under the exposed drain pad to maximize heat transfer to inner copper layers. Keep the gate-trace width at least 0.4 mm and surround it with ground to minimize gate-loop inductance; a 1-10 nF gate-to-source resistor placed within 2 mm of the gate pin is recommended to suppress ringing caused by drain dv/dt coupling through Cgd. The high-current drain path should use wide copper pours (≥2 oz) on top and bottom layers stitched with multiple vias. Avoid routing signal traces under the device to keep noise coupling low.
Do not drive the IAUCN04S7N056DATMA1 gate directly from a 3.3 V microcontroller GPIO: VGS(th) is in the 2-3 V range but full R DS(on) requires VGS=10 V, otherwise on-resistance and dissipation are far higher than the datasheet. Use a dedicated gate driver (e.g. 2EDL5023U2DXTMA1 for half-bridge or 1EDN7136UXTSA1 for single-FET) to deliver a 10 V VGS. Also, do not exceed the 40 V VDS - 12 V automotive systems can show 35 V load-dump transients, so a TVS or snubber across drain-source is recommended. Finally, place a 100 kΩ gate pull-down resistor to ensure the device stays off during MCU reset and brown-out conditions.
Thông tin tuân thủ
AEC-Q101 qualified per the Infineon automotive MOSFET family page and Arrow listing. RoHS and lead-free confirmed by Infineon product information. The part is a RoHS-compliant, halogen-free, Pb-free automotive-grade OptiMOS 5 40V N-channel MOSFET.
