IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
MPN: IGLR70R270D2SXUMA1 ✓ Hoạt độngIGLR70R270D2SXUMA1 Tóm tắt
A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power semiconductor that uses a GaN-on-silicon heterojunction instead of silicon. Within the power-converter hierarchy, GaN FETs sit between silicon MOSFETs (slower, higher losses) and silicon carbide (SiC) MOSFETs (higher voltage, more expensive); CoolGaN™ specifically targets high-frequency, high-density switched-mode power supplies in the 100-700 V class.
The defining characteristics of this part are its 700 V drain-source blocking voltage, 270 mΩ typical RDS(on), and ultrafast switching capability enabled by GaN's absence of a body diode and small gate/output charges. The PG-TSON-8-8 (also referred to as ThinPAK in Infineon literature) is a chip-scale, bottom-source package that minimises parasitic source inductance and provides low thermal resistance from junction to PCB. It is produced on fully-automated 200 mm (8-inch) wafer lines, which translates into tight production tolerances and consistent parametric distributions.
Architecturally, CoolGaN™ G5 uses an integrated internal gate diode to simplify gate-drive design and to enable normally-off operation from a standard 0-12 V gate drive. The very low gate charge (Qg) and zero reverse-recovery charge (Qrr) permit hard-switched half-bridge operation at multi-hundred-kilohertz frequencies with substantially lower switching losses than silicon super-junction MOSFETs of similar RDS(on).
Typical applications include high-density AC-DC flyback and totem-pole PFC converters, 400 V EV onboard chargers, telecom and server SMPS, USB-PD adapters above 100 W, and photovoltaic micro-inverters. The wide 700 V rating specifically targets universal-mains (85-264 VAC) rectified-bus operation up to 400 V bus rails.
When designing with this part, place the gate driver within millimetres of the gate pin to contain the high di/dt loop, and route the source-return of the gate-driver supply directly to the bottom source pad to avoid common-source inductance that would otherwise slow switching and induce unwanted Vgs overshoot.
This page consolidates distributor pricing, in-family CoolGaN drop-in alternatives, and practical layout notes that complement (but do not replace) the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IGLR70R270D2SXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IGLR70R270D2SXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
IGLR70R200D2SXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC045N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC50N04S5L5R5ATMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IGLR70R270D2SXUMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ G5 |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID, Tc) | 7.3 A |
| Power Dissipation (PD, Tc) | 28 W |
| On-State Resistance (RDS(on), typ.) | 270 mΩ |
| Hộp | PG-TSON-8-8 (ThinPAK) |
| Kiểu lắp đặt | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | 200 mm (8-inch) GaN-on-Si |
| Trạng thái RoHS | Compliant |
| Khoảng nhiệt độ hoạt động | -40C to +150C (junction) |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
Cấu hình chân IGLR70R270D2SXUMA1
| Chân 1 | S — Source (peripheral lead) |
| Chân 2 | G — Gate |
| Chân 3 | S — Source-sense (Kelvin connection for gate-drive return) |
| Chân 4 | D — Drain |
| Chân 5 | D — Drain |
| Chân 6 | S — Source (peripheral lead) |
| Chân 7 | S — Source (peripheral lead) |
| Chân 8 | S — Source (peripheral lead) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IGLR70R270D2SXUMA1 phù hợp cho 7 Áp dụngs: Totem-Pole Bridgeless PFC, High-Density AC-DC Flyback Adapter (USB-PD >100W), Telecom and Server SMPS (48 V Intermediate Bus), Solar Microinverter and String Inverter, EV Onboard Charger (OBC) PFC and DCDC Stage, Industrial Switched-Mode Power Supply (SMPS), LED Driver for High-Brightness Lighting.
Totem-Pole Bridgeless PFC
The IGLR70R270D2SXUMA1 is ideally suited as the slow leg (50/60 Hz line-frequency) pair of a totem-pole bridgeless PFC operating from universal-mains rectified 400 V bus rails. The 700 V VDS rating provides 75% margin above 400 V, and the 270 mΩ RDS(on) keeps conduction loss below 1 W per device at 3 kW. Compared to a silicon super-junction MOSFET, the GaN FET's zero Qrr eliminates the slow-leg reverse-recovery penalty that has historically limited bridgeless PFC efficiency above 200 W.
Được đề xuất
High-Density AC-DC Flyback Adapter (USB-PD >100W)
In a 100-150 W USB-PD adapter built on an active-clamp flyback topology, the IGLR70R270D2SXUMA1 is used as the main switch on the 600 V / 400 V bus. Its 7.3 A continuous rating supports 100 W continuous output with adequate thermal margin, and the GaN switching frequency can be pushed above 200 kHz, shrinking the transformer by 40-50% versus a silicon-based 65 kHz design. The PG-TSON-8-8 bottom-source pad enables top-side cooling on a compact 1.5 cc adapter PCB.
Được đề xuất
Telecom and Server SMPS (48 V Intermediate Bus)
The IGLR70R270D2SXUMA1 serves as the primary-side switch in a 600-800 W hard-switched half-bridge converter used for 48 V intermediate-bus converters (IBC) in hyperscale datacenters. Its zero Qrr permits high-frequency (>300 kHz) hard-switching without the reverse-recovery-induced body-diode losses that plague silicon MOSFETs, raising peak efficiency above 97.5%. The 700 V rating tolerates rectified 230 VAC mains plus transient ring-up during load steps, an essential margin for telecom rectifier compliance.
Được đề xuất
Solar Microinverter and String Inverter
In a 600-1500 W microinverter, the IGLR70R270D2SXUMA1 GaN transistor operates in the active-bridge of the DC-DC boost stage feeding the 400 V inverter bus. The wide 700 V rating tolerates wide PV-input voltage swings, while the 270 mΩ RDS(on) keeps conduction loss below 1% even at full MPPT current. GaN's ability to switch at high frequency allows the use of compact planar magnetics, which is critical for the hermetically-sealed IP67 enclosure typical of outdoor PV microinverters.
Được đề xuất
EV Onboard Charger (OBC) PFC and DCDC Stage
In a 3.3-11 kW EV onboard charger, the IGLR70R270D2SXUMA1 functions as a switch in the totem-pole PFC and/or the isolated DCDC primary stage, where 800 V EV-bus architectures drive a hard requirement on switch blocking voltage. Although a single 700 V part is at the lower end of 800 V bus stress, it can be paralleled or used in the lower-voltage 400 V bus OBC designs. The GaN switching speed keeps OBC peak efficiency above 96%, directly extending vehicle range per AC-charge cycle.
Được đề xuất
Industrial Switched-Mode Power Supply (SMPS)
The IGLR70R270D2SXUMA1 is deployed as the main switching element in a 600-1200 W industrial SMPS used for factory automation, CNC machines, and programmable-logic-controller backplanes. The 700 V VDS rating handles universal-mains 85-264 VAC input with full derating margin, while the 270 mΩ RDS(on) and GaN switching capability enable a >250 kHz operation frequency, allowing smaller inductors and capacitors in the LC filter. The PG-TSON-8-8 ThinPAK package offers strong mechanical robustness for industrial vibration profiles.
Được đề xuất
LED Driver for High-Brightness Lighting
In a high-brightness LED driver (500 W to 2 kW architectural or horticultural lighting), the IGLR70R270D2SXUMA1 serves as the PFC-stage switch and the resonant LLC half-bridge primary. The high-frequency switching capability shrinks the magnetics and EMI-filter passives dramatically, allowing the driver to fit inside slim linear LED fixtures. The GaN FET's lack of reverse-recovery charge reduces ringing and EMI, simplifying compliance with CISPR 15 conducted and radiated limits.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IGLR70R270D2SXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IGLR70R200D2SXUMA1 | ISC045N03L5SATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) |
| Package | PG-TSON-8-8 (ThinPAK) | PG-TSON-8-8 (ThinPAK) - same | PG-TSDSON-8 - same outline family | PG-TSDSON-8 - same outline family |
| Technology | GaN HEMT (CoolGaN G5) | GaN HEMT (CoolGaN G5) | Silicon MOSFET (OptiMOS 5) | Silicon MOSFET (OptiMOS 7) |
| Drain-Source Voltage (VDS) | 700 V | 700 V | 30 V | 40 V |
| Typical RDS(on) | 270 mΩ | 200 mΩ (-26%) | 4.5 mΩ (-98% relative) | 1.1 mΩ (-99% relative) |
| Continuous Drain Current (Tc) | 7.3 A | 9 A (typ.) | 45 A | 100 A |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | non-zero (silicon body diode) | non-zero (silicon body diode) |
| Best-Fit Application | Universal-mains PFC / flyback 100-700 W | Universal-mains PFC 1-3 kW | 12-24 V buck/load switch | 48 V bus / eFuse |
Bảo phân biệt quan trọng
- Zero reverse-recovery charge enables hard-switched half-bridge operation above 200 kHz (vsISC045N03L5SATMA1)
- Highest voltage rating in Infineon's 8-pin source-bottom family (vsISC011N04NM7VATMA1)
- Lower RDS(on) variant available in identical footprint for higher-power designs (vsIGLR70R200D2SXUMA1)
Ghi chú thiết kế
Minimise the high-frequency power loop by placing input bypass capacitors within 2-3 mm of the drain and source pads. The bottom-source pad of the PG-TSON-8-8 ThinPAK package is the primary thermal path - use a flooded copper pour on the top layer (at least 1 oz copper, recommended 2 oz) directly beneath the device and stitch it with 8-12 thermal vias to an inner-layer ground plane. Keep the gate-drive loop (gate-driver output, gate resistor, gate pin, kelvin-source pin) under 5 mm total length to suppress Vgs ringing.
Estimated: at 200 kHz hard-switched operation with VIN=400 V and a 5 A drain current, the IGLR70R270D2SXUMA1 dissipates approximately 1.4 W (270 mΩ conduction) plus switching losses. Without sufficient thermal vias and copper pour, junction temperature will exceed 125 C within seconds. Always derate against the Infineon Zth curves published in the CoolGaN G5 datasheet and avoid mounting the part over signal traces that interrupt the bottom thermal pad.
Use a dedicated gate-source resistor (typically 10 kΩ) to define the off-state gate voltage and prevent inadvertent turn-on from Miller current during high dv/dt transitions. A small ferrite bead or series gate resistor (5-15 Ω) dampens gate-loop ringing. The internal gate diode inside CoolGaN G5 simplifies the negative-bias requirement but does not eliminate the need for tight gate-loop layout.
Estimated junction temperature rise above 25 C ambient, at 1.5 W continuous dissipation on a standard JEDEC 1s0p test board, is approximately 75 C - well within the 150 C maximum rating. In a real adapter with flooded copper, this same 1.5 W produces only a 30-40 C rise, enabling higher power density without active cooling. Always verify with thermocouple measurements on a fully-assembled PCB; thermal simulation alone is insufficient for safety-critical automotive or medical designs.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer power-conversion applications. Halogen-free per Infineon CoolGaN G5 family documentation.
