IPB17N25S3100ATMA1 - 250V 17A N-Channel MOSFET | Infineon
MPN: IPB17N25S3100ATMA1 ✓ Hoạt độngIPB17N25S3100ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion and motor-drive applications. MOSFETs sit within the broader hierarchy of discrete semiconductors (transistors), and as an N-channel enhancement-mode part, IPB17N25S3100ATMA1 turns on when a positive gate-source voltage is applied. It belongs to Infineon's OptiMOS family, where low RDS(on) per silicon area reduces conduction losses in high-current switching topologies.
Key specifications include a drain-source voltage (VDS) of 250 V, gate-source voltage (VGS) of +/-20 V, total gate charge (Qg) of 19 nC at VGS = 10 V, input capacitance (Ciss) of 1.5 nF, and output capacitance (Coss) of 23 pF. The threshold voltage (VGS(th)) is 4 V, with avalanche-rated ruggedness (100% avalanche tested) and a maximum power dissipation of 107 W at Tc = 25 C.
The device uses Infineon's trench-technology cell structure to achieve the 19.3 mOhm typical RDS(on) figure cited in manufacturer collateral, balancing low conduction loss with manageable switching loss for hard-switched converters. The D2PAK package offers a low thermal resistance path suitable for tab-screw mounting or large PCB copper areas.
Typical applications include automotive DC-DC converters, 48 V mild-hybrid systems, motor-drive inverter stages, solenoid drivers, and industrial switched-mode power supplies. The 250 V rating also suits telecom brick converters and photovoltaic micro-inverter front-ends.
When designing with this part, choose gate-drive voltage of 10 V for full enhancement and minimize loop inductance between drain and source to control switching transients. The tab is electrically connected to the drain; mounting isolation must be considered for heatsink-attached designs.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for selection and sourcing.
Bộ thay thế dễ dàng lắp đặt cho IPB17N25S3100ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPB17N25S3100ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Drain-Source Voltage (VDS), RoHS Status, Transistor Type, Gate Threshold Voltage (VGS(th)).
IPI17N25S3-100
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPP17N25S3-100
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUZ30N06S5L140ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC039N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB17N25S3100ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 |
| Kiểu transitor | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc | 17 A |
| Pulsed Drain Current (IDM) | 64 A |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 4 V |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V |
| Input Capacitance (Ciss) | 1.5 nF |
| Output Capacitance (Coss) | 23 pF |
| Reverse Transfer Capacitance (Crss) | 625 pF |
| Power Dissipation (PD) | 107 W at Tc = 25 C |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| Hộp | PG-TO263-3-2 (D2PAK-2) |
| Kiểu lắp đặt | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Rated | 100% avalanche tested |
| Trạng thái RoHS | Compliant (Green Product) |
Cấu hình chân IPB17N25S3100ATMA1
| Chân 1 | Gate — Gate control input; drive to 10 V for full enhancement |
| Chân 2 | Drain — Drain terminal (also connected to the metal tab on the package bottom) |
| Chân 3 | Source — Source terminal and Kelvin return for gate-drive reference |
Khu vực hoạt động an toàn - DC Continuous
Ứng dụng tiêu biểu
IPB17N25S3100ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid DC-DC Converter, Automotive Motor-Drive Inverter, Industrial Switched-Mode Power Supply, Solar Micro-Inverter Front-End, Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) PFC Stage.
48V Mild-Hybrid DC-DC Converter
The IPB17N25S3100ATMA1's 250 V VDS rating comfortably exceeds the 48 V mild-hybrid bus voltage, leaving >4x derating margin for switching transients and inductive ringing. In a buck or boost converter switching at 100-250 kHz, the 19 nC gate charge keeps gate-driver loss manageable (~3.8 mW at 100 kHz), while the 100 mOhm max RDS(on) at 10 V drive yields ~1.7 W conduction loss at 13 A continuous - acceptable for the synchronous-rectifier or main switch position. AEC-Q101 qualification makes it directly usable in 48 V DCDC converters that feed the 12 V rail in mild-hybrid vehicles. Use a 10 V gate drive and minimize source-loop inductance to control turn-off transients.
Được đề xuất
Automotive Motor-Drive Inverter
In a 3-phase bridge driving a BLDC motor at 48-100 V bus, the IPB17N25S3100ATMA1 handles phase switching with its 250 V VDS and 17 A continuous rating - sufficient for pumps, fans, and small traction motors up to ~1 kW. The 64 A pulsed rating accommodates motor inrush and inductive kickback during commutation. The 100% avalanche rating and 175 C junction temperature capability provide margin for the harsh thermal environment of under-hood automotive motor-drive modules. Use isolated gate drivers and TVS clamping on the gate for robust operation.
Được đề xuất
Industrial Switched-Mode Power Supply
For telecom-style AC-DC converters operating from rectified 170 V or 200 V rails, the IPB17N25S3100ATMA1's 250 V VDS rating provides 50 V of derating margin above peak rectified mains. The 107 W power dissipation rating and D2PAK thermal envelope support full-load operation without additional heatsinking beyond PCB copper. The trench technology's low RDS(on) of 19.3 mOhm typical improves efficiency by 1-2% over older planar MOSFETs in PFC and main-converter stages, reducing thermal stress on adjacent magnetics.
Được đề xuất
Solar Micro-Inverter Front-End
In photovoltaic micro-inverter or DC-optimizer designs operating from 40-150 V PV string inputs, the IPB17N25S3100ATMA1 serves as the high-side or low-side switch in a full-bridge or push-pull topology. The 250 V rating handles open-circuit PV string voltage at cold temperatures (temperature coefficient increases Voc at -25 C), and the 17 A rating supports micro-inverter outputs up to ~500 W. The AEC-Q101 grade offers reliability headroom over commercial-grade alternatives for solar installations with 25-year service-life requirements.
Được đề xuất
Solenoid and Relay Driver
The IPB17N25S3100ATMA1's 64 A pulsed drain current rating makes it well-suited for driving inductive loads such as solenoids, fuel injectors, and high-current relays in automotive and industrial systems. The 250 V VDS absorbs flyback voltage when the inductive load is switched off, eliminating the need for external freewheeling diodes in many configurations. The fast switching and 19 nC Qg enable sub-microsecond turn-off times, critical for high-speed fuel-injector or piezo-injector drive waveforms.
Được đề xuất
Uninterruptible Power Supply (UPS) PFC Stage
In the boost-PFC stage of a 1-3 kVA UPS, the IPB17N25S3100ATMA1 operates as the boost switch handling rectified mains at 200-380 V peak. The 250 V VDS is suitable for 230 V AC universal-input designs with adequate margin. The 17 A continuous current rating supports >1 kW PFC stages, and the 107 W dissipation rating handles continuous-mode conduction losses. AEC-Q101 qualification offers reliability margin for the 24/7 continuous-operation duty cycle of UPS installations.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPB17N25S3100ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPI17N25S3-100 | IPP17N25S3-100 | IAUZ30N06S5L140ATMA1 | BSC027N04LSGATMA1 | BSC039N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO262-3-2 (I2PAK) | PG-TO220-3-2 (TO-220-2) | PG-TO263-3-2 (D2PAK) - same | PG-TDSON-8 (SuperSO8) | PG-TDSON-8 (SuperSO8) |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 250 V | 250 V - same | 250 V - same | 60 V (-76%) | 40 V (-84%) | 60 V (-76%) |
| Continuous Drain Current (ID) | 17 A | 17 A - same | 17 A - same | 30 A (+76%) | 25 A (+47%) | 19 A (+12%) |
| RDS(on) max @ 10 V | 100 mOhm | 100 mOhm - same | 100 mOhm - same | 1.4 mOhm (lower - voltage class difference) | 2.7 mOhm (lower) | 3.9 mOhm (lower) |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +150 C | -55 C to +150 C |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Same-die through-hole variant available for chassis-mount designs (vsIPI17N25S3-100)
- 250 V voltage class exceeds typical 60 V synchronous FETs in the same D2PAK footprint (vsIAUZ30N06S5L140ATMA1)
- AEC-Q101 automotive qualified with 175 C junction temperature (vsBSC039N06NSATMA1)
Ghi chú thiết kế
Estimated: at continuous 17 A with RDS(on) = 100 mOhm at 100 C junction, conduction loss is approximately 28.9 W. The D2PAK package's theta_JC is typically ~1 C/W, giving a junction-to-case temperature rise of ~29 C above case temperature. Adequate PCB copper area (at least 2 square inches of 2 oz copper) or an external heatsink is required to keep the case below 100 C in continuous operation. For pulsed operation, the 64 A IDM rating permits transient loads up to several milliseconds per the SOA curve.
Minimize the source-loop inductance by placing the gate-driver return directly at the source pin rather than at a distant ground point. Keep the drain-to-source switching loop compact - the high di/dt of MOSFET switching induces voltage spikes proportional to loop inductance. Use a 10 V gate-drive supply with peak source/sink current of at least 1 A to switch the 19 nC gate charge in <20 ns. Add a TVS or RC snubber across drain-source if the application has high parasitic inductance.
The metal tab of the D2PAK package is electrically connected to the drain pin. If mounting to a heatsink, use a thermally-conductive but electrically-insulating pad (e.g., silicone rubber with fiberglass reinforcement) to avoid shorting the drain to chassis ground. Exceeding the +/-20 V VGS rating can permanently damage the gate oxide - ensure gate-drive transients are clamped. The body diode is rated for limited forward current; for high-current freewheeling, consider an external Schottky diode in parallel.
Thông tin tuân thủ
AEC-Q101 qualified per Infineon datasheet (automotive-grade MOSFET equivalent). RoHS compliant and lead-free per product page. MSL1 rated for reflow up to 260 C.
