IPB65R041CFD7ATMA1 - 650V 41mΩ CoolMOS CFD7 MOSFET | Infineon
MPN: IPB65R041CFD7ATMA1 ✓ Hoạt độngIPB65R041CFD7ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts electrical energy by turning a drain-source current on and off in response to a gate-source voltage. Within the power-converter hierarchy, MOSFETs sit one level below magnetics, capacitors, and gate drivers; high-voltage superjunction types such as CoolMOS CFD7 are typically chosen for PFC, half-bridge, and full-bridge stages in switched-mode power supplies. Synonyms include N-channel MOSFET, superjunction MOSFET, and high-voltage FET. Industry standards governing this part family include JEDEC JESD22 for environmental robustness and IPC-A-610 for assembly acceptance.
Key features of the IPB65R041CFD7ATMA1 include a 41 mΩ maximum R_DS(on) at V_GS=10V, a 650V drain-source breakdown voltage, integrated fast body diode with low Q_rr, low gate charge Q_G for reduced driver losses, and an avalanche-rated single-pulse body diode suitable for ZVS bridges. The device is part of Infineon's 500V-950V CFD7 portfolio and is halogen-free, RoHS-compliant, and qualified to JEDEC moisture sensitivity level 1.
Technically, the CoolMOS CFD7 cell uses Infineon's superjunction structure with charge-balance compensation, achieving a per-area R_DS(on) that is several times lower than conventional planar MOSFETs of the same voltage class. The fast body diode uses lifetime-control techniques, making it safe for bridge topologies where the diode conducts before channel turn-on. Designers gain higher switching frequencies, smaller magnetics, and lower EMI.
Typical applications include server and telecom SMPS, solar inverters, EV on-board chargers, industrial welding, and high-power LED drivers. The combination of low R_DS(on), 650V rating, and a robust body diode makes the IPB65R041CFD7ATMA1 especially well suited to LLC resonant converters and ZVS phase-shift full-bridge converters used in high-power-density AC-DC and DC-DC power supplies.
When designing with this part, observe the 650V maximum V_DS and keep the avalanche energy below the datasheet single-pulse rating. Use a low-inductance gate-drive loop and minimize source-lead parasitic inductance to control switching loss and ringing. Always verify thermal performance with a board-level measurement rather than relying solely on R_thJC data.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the IPB65R041CFD7ATMA1 with confidence for next-generation high-efficiency power conversion designs.
Bộ thay thế dễ dàng lắp đặt cho IPB65R041CFD7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPB65R041CFD7ATMA1 (cùng hình factor và footprint) — khác nhau ở MSL Level, Package, Technology.
IPB65R040CFD7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB65R060CFD7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB60R040CFD7ATMA1
✅ Drop-In✓ Còn hàng
$5.19 / Đơn vị
Xem tài liệu →IPW65R041CFD7XKSA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPB65R041CFD7ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | CoolMOS CFD7 superjunction N-channel MOSFET |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D, Tc=25°C) | 50 A |
| On-Resistance R_DS(on) max (V_GS=10V) | 41 mΩ |
| Power Dissipation (P_D, Tc=25°C) | 227 W |
| Gate-Source Voltage (V_GS) | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th) typ) | 4.5 V |
| Nhiệt độ mối nối hoạt động | -55°C to +150°C |
| Hộp | PG-TO263-3 (D2PAK, surface mount) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 (Gate / Drain / Source, tab = Drain) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Series | CoolMOS™ CFD7 |
Cấu hình chân IPB65R041CFD7ATMA1
| Chân 1 | GATE — Gate control input, drive between 0V and 10V V_GS |
| Chân 2 | DRAIN — Drain terminal, internally connected to the metal tab |
| Chân 3 | SOURCE — Source terminal, return path for gate drive |
Khu vực hoạt động an toàn (DC, Tc=25°C)
Ứng dụng tiêu biểu
IPB65R041CFD7ATMA1 phù hợp cho 7 Áp dụngs: Server and Telecom SMPS (LLC Resonant), Solar Inverter (PV Boost and Bridge Stages), EV On-Board Charger (OBC) PFC and DC-DC, Industrial Welding and Plasma Cutters, High-Power LED Drivers and Stage Lighting, Server and Datacenter 80+ Titanium PSU, TFT/LCD Bias Supply for Industrial Displays.
Server and Telecom SMPS (LLC Resonant)
The IPB65R041CFD7ATMA1 is the primary primary-side switch in 800W-3kW LLC resonant converters that power 48V server and telecom rails. Its 650V V_DS handles 400V rectified PFC output with margin, the 41 mΩ R_DS(on) keeps conduction loss under 2W per device at 30A rms, and the CFD7 fast body diode eliminates the need for an external anti-parallel diode in ZVS bridges. The result is a converter efficiency of 97%+ and a 1.5kW/L power density.
Được đề xuất
Solar Inverter (PV Boost and Bridge Stages)
In 1kW-3kW single-phase string inverters the IPB65R041CFD7ATMA1 is used in the boost PFC and the H4/H5 bridge, where 600V-650V switching devices are required to survive surge and grid fault transients. The 50A I_D and 227W P_D let it sustain the full 30A inverter current with 4-layer FR4 PCB copper only, while the CFD7 fast body diode prevents shoot-through and allows ZVS at the inverter switching node for EMI reduction below CISPR 11 limits.
Được đề xuất
EV On-Board Charger (OBC) PFC and DC-DC
The IPB65R041CFD7ATMA1 is widely used in 3.3kW-11kW on-board chargers as the active switch in the totem-pole PFC and the primary-side CLLLC converter. The 650V rating provides the necessary 400V-470V bus headroom for AEC-Q101 designs, and the CFD7 fast body diode is rated for the hard-commutated dv/dt typical of bridgeless totem-pole topology. For AEC-Q101 requirement, designers select the IPB65R041CFD7AUMA1 (AU suffix).
Được đề xuất
Industrial Welding and Plasma Cutters
The IPB65R041CFD7ATMA1 is used in inverter welding machines and plasma cutters as the primary-side switch in IGBT/MOSFET bridge stages that run off a 400V-480V rectified AC bus. The 50A I_D and the avalanche-rated single-pulse body diode (per Infineon datasheet) provide the ruggedness required to absorb the energy reflected from a welding arc ignition or a shorted workpiece. The TO-263-3 package bolts to the chassis heat sink for continuous industrial duty.
Được đề xuất
High-Power LED Drivers and Stage Lighting
The IPB65R041CFD7ATMA1 powers 1kW-5kW LED driver stages in film studio lighting, theatrical moving heads, and architectural floodlighting, where a high-voltage PFC plus LLC cascade delivers constant-current to high-density COB arrays. The 41 mΩ R_DS(on) and low Q_rr keep the LLC switching frequency at 100-200 kHz for compact magnetics, and the part's halogen-free D2PAK package meets the lead-free and green-design requirements of professional AV equipment.
Được đề xuất
Server and Datacenter 80+ Titanium PSU
The IPB65R041CFD7ATMA1 is the primary-side active switch in 1.6kW-3kW 80+ Titanium redundant server power supplies, where the LLC stage is preceded by an interleaved CCM PFC. The CFD7's low R_DS(on) and fast body diode allow the LLC to switch at 80-150 kHz with ZVS at full load, pushing efficiency above 96% at 50% load per the 80+ Titanium spec. The D2PAK package also supports top-side cooling for 1U form-factor PSUs.
Được đề xuất
TFT/LCD Bias Supply for Industrial Displays
The IPB65R041CFD7ATMA1 is used in the 24V-input, 200V-300V-output boost converter that generates the VGH/VGL bias rails for large TFT-LCD panels in industrial HMI and medical displays. The 650V V_DS comfortably handles the 200-300V output with 200V of headroom for transient overshoot at load release, and the low Q_G of the CFD7 family lets the converter run at 100 kHz with a small planar transformer, saving PCB area behind the LCD bezel.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPB65R041CFD7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPB65R040CFD7ATMA1 | IPB65R060CFD7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| V_DS max (V) | 650 | 650 | 650 | 600 |
| I_D continuous (A, Tc=25°C) | 50 | 50 | 40 | 50 |
| R_DS(on) max (mΩ) at V_GS=10V | 41 | 40 | 60 | 40 |
| Fast Body Diode (CoolMOS CFD7) | Yes | Yes | Yes | Yes |
| Automotive Grade (AEC-Q101) | No (industrial) | No (industrial) | No (industrial) | No (industrial) |
| Approx. Unit Price (1k qty, USD) | 2.92 | 3.05 | 2.55 | 2.95 |
Bảo phân biệt quan trọng
- Fast body diode optimized for ZVS and LLC bridges (vsIPB65R040CFD7ATMA1)
- 650V rating provides 50V headroom over 600V PFC bus (vsIPB60R040CFD7ATMA1)
- Lower R_DS(on) at same V_DS class (vsIPB65R060CFD7ATMA1)
Ghi chú thiết kế
At I_D=30A rms in an LLC stage, the IPB65R041CFD7ATMA1 dissipates approximately I_D² × R_DS(on) × (1 - cos_theta)/2 ≈ 7-9W. With R_thJC ≈ 0.55°C/W and a TO-263 copper area of 1 sq-inch (R_thJA ≈ 35°C/W), the case rises 25-30°C above ambient at full load. For continuous 40A+ operation, add an external heat sink or upgrade to a top-side cooled TOLL package.
Keep the gate-drive loop under 5mm by placing the gate resistor and gate-source 100nF bypass directly between pins 1 and 3. Use a Kelvin-source connection when possible (4-pin D2PAK variant) to eliminate source-lead inductance and prevent turn-on dv/dt-induced ringing. The drain copper must carry 50A continuous without exceeding 30°C/W to keep case temperature within the SOA.
Never operate above V_DS=650V; the datasheet reserves a 50V transient rating, but continuous operation above 600V risks avalanche. Avoid gate voltages above ±20V; even a brief 24V gate drive can rupture the oxide. For the CFD7 fast body diode, do NOT add a series diode to slow it - the part is qualified to handle hard commutation up to the datasheet di/dt limit.
Place a 100nF/100V X7R bypass directly between gate and source as close to the IC as possible to suppress V_GS ringing during turn-on. The TO-263 tab must be soldered to a continuous copper pour of at least 25×25mm on the top layer; use thermal vias in a 3×3 grid to bottom layer to keep R_thJA ≤ 35°C/W in 4-layer FR4 designs.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Industrial grade only - select the IPB65R041CFD7AUMA1 (AU suffix) for AEC-Q101 automotive applications. Halogen-free and lead-free per JEDEC J-STD-020 MSL-1 qualification.
