IPB65R041CFD7ATMA1 - 650V 41mΩ CoolMOS CFD7 MOSFET | Infineon
MPN: IPB65R041CFD7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.05 | $40.50 |
| 100 | $3.6 | $360.00 |
| 500 | $3.24 | $1,620.00 |
| 1,000 | $2.92 | $2,920.00 |
IPB65R041CFD7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts electrical energy by turning a drain-source current on and off in response to a gate-source voltage. Within the power-converter hierarchy, MOSFETs sit one level below magnetics, capacitors, and gate drivers; high-voltage superjunction types such as CoolMOS CFD7 are typically chosen for PFC, half-bridge, and full-bridge stages in switched-mode power supplies. Synonyms include N-channel MOSFET, superjunction MOSFET, and high-voltage FET. Industry standards governing this part family include JEDEC JESD22 for environmental robustness and IPC-A-610 for assembly acceptance.
Key features of the IPB65R041CFD7ATMA1 include a 41 mΩ maximum R_DS(on) at V_GS=10V, a 650V drain-source breakdown voltage, integrated fast body diode with low Q_rr, low gate charge Q_G for reduced driver losses, and an avalanche-rated single-pulse body diode suitable for ZVS bridges. The device is part of Infineon's 500V-950V CFD7 portfolio and is halogen-free, RoHS-compliant, and qualified to JEDEC moisture sensitivity level 1.
Technically, the CoolMOS CFD7 cell uses Infineon's superjunction structure with charge-balance compensation, achieving a per-area R_DS(on) that is several times lower than conventional planar MOSFETs of the same voltage class. The fast body diode uses lifetime-control techniques, making it safe for bridge topologies where the diode conducts before channel turn-on. Designers gain higher switching frequencies, smaller magnetics, and lower EMI.
Typical applications include server and telecom SMPS, solar inverters, EV on-board chargers, industrial welding, and high-power LED drivers. The combination of low R_DS(on), 650V rating, and a robust body diode makes the IPB65R041CFD7ATMA1 especially well suited to LLC resonant converters and ZVS phase-shift full-bridge converters used in high-power-density AC-DC and DC-DC power supplies.
When designing with this part, observe the 650V maximum V_DS and keep the avalanche energy below the datasheet single-pulse rating. Use a low-inductance gate-drive loop and minimize source-lead parasitic inductance to control switching loss and ringing. Always verify thermal performance with a board-level measurement rather than relying solely on R_thJC data.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the IPB65R041CFD7ATMA1 with confidence for next-generation high-efficiency power conversion designs.
Drop-in alternatives for IPB65R041CFD7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB65R041CFD7ATMA1 (same form factor and footprint) — differing in MSL Level, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB65R040CFD7ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB65R060CFD7ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →IPW65R041CFD7XKSA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB65R041CFD7ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS CFD7 superjunction N-channel MOSFET |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D, Tc=25°C) | 50 A |
| On-Resistance R_DS(on) max (V_GS=10V) | 41 mΩ |
| Power Dissipation (P_D, Tc=25°C) | 227 W |
| Gate-Source Voltage (V_GS) | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th) typ) | 4.5 V |
| Operating Junction Temperature | -55°C to +150°C |
| Package | PG-TO263-3 (D2PAK, surface mount) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate / Drain / Source, tab = Drain) |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Series | CoolMOS™ CFD7 |
IPB65R041CFD7ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input, drive between 0V and 10V V_GS |
| Pin 2 | DRAIN — Drain terminal, internally connected to the metal tab |
| Pin 3 | SOURCE — Source terminal, return path for gate drive |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPB65R041CFD7ATMA1 is suitable for 7 applications: Server and Telecom SMPS (LLC Resonant), Solar Inverter (PV Boost and Bridge Stages), EV On-Board Charger (OBC) PFC and DC-DC, Industrial Welding and Plasma Cutters, High-Power LED Drivers and Stage Lighting, Server and Datacenter 80+ Titanium PSU, TFT/LCD Bias Supply for Industrial Displays.
Server and Telecom SMPS (LLC Resonant)
The IPB65R041CFD7ATMA1 is the primary primary-side switch in 800W-3kW LLC resonant converters that power 48V server and telecom rails. Its 650V V_DS handles 400V rectified PFC output with margin, the 41 mΩ R_DS(on) keeps conduction loss under 2W per device at 30A rms, and the CFD7 fast body diode eliminates the need for an external anti-parallel diode in ZVS bridges. The result is a converter efficiency of 97%+ and a 1.5kW/L power density.
Recommended
Solar Inverter (PV Boost and Bridge Stages)
In 1kW-3kW single-phase string inverters the IPB65R041CFD7ATMA1 is used in the boost PFC and the H4/H5 bridge, where 600V-650V switching devices are required to survive surge and grid fault transients. The 50A I_D and 227W P_D let it sustain the full 30A inverter current with 4-layer FR4 PCB copper only, while the CFD7 fast body diode prevents shoot-through and allows ZVS at the inverter switching node for EMI reduction below CISPR 11 limits.
Recommended
EV On-Board Charger (OBC) PFC and DC-DC
The IPB65R041CFD7ATMA1 is widely used in 3.3kW-11kW on-board chargers as the active switch in the totem-pole PFC and the primary-side CLLLC converter. The 650V rating provides the necessary 400V-470V bus headroom for AEC-Q101 designs, and the CFD7 fast body diode is rated for the hard-commutated dv/dt typical of bridgeless totem-pole topology. For AEC-Q101 requirement, designers select the IPB65R041CFD7AUMA1 (AU suffix).
Recommended
Industrial Welding and Plasma Cutters
The IPB65R041CFD7ATMA1 is used in inverter welding machines and plasma cutters as the primary-side switch in IGBT/MOSFET bridge stages that run off a 400V-480V rectified AC bus. The 50A I_D and the avalanche-rated single-pulse body diode (per Infineon datasheet) provide the ruggedness required to absorb the energy reflected from a welding arc ignition or a shorted workpiece. The TO-263-3 package bolts to the chassis heat sink for continuous industrial duty.
Recommended
High-Power LED Drivers and Stage Lighting
The IPB65R041CFD7ATMA1 powers 1kW-5kW LED driver stages in film studio lighting, theatrical moving heads, and architectural floodlighting, where a high-voltage PFC plus LLC cascade delivers constant-current to high-density COB arrays. The 41 mΩ R_DS(on) and low Q_rr keep the LLC switching frequency at 100-200 kHz for compact magnetics, and the part's halogen-free D2PAK package meets the lead-free and green-design requirements of professional AV equipment.
Recommended
Server and Datacenter 80+ Titanium PSU
The IPB65R041CFD7ATMA1 is the primary-side active switch in 1.6kW-3kW 80+ Titanium redundant server power supplies, where the LLC stage is preceded by an interleaved CCM PFC. The CFD7's low R_DS(on) and fast body diode allow the LLC to switch at 80-150 kHz with ZVS at full load, pushing efficiency above 96% at 50% load per the 80+ Titanium spec. The D2PAK package also supports top-side cooling for 1U form-factor PSUs.
Recommended
TFT/LCD Bias Supply for Industrial Displays
The IPB65R041CFD7ATMA1 is used in the 24V-input, 200V-300V-output boost converter that generates the VGH/VGL bias rails for large TFT-LCD panels in industrial HMI and medical displays. The 650V V_DS comfortably handles the 200-300V output with 200V of headroom for transient overshoot at load release, and the low Q_G of the CFD7 family lets the converter run at 100 kHz with a small planar transformer, saving PCB area behind the LCD bezel.
Recommended
Recommended Products Summary
Engineering reference data for IPB65R041CFD7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB65R040CFD7ATMA1 | IPB65R060CFD7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| V_DS max (V) | 650 | 650 | 650 | 600 |
| I_D continuous (A, Tc=25°C) | 50 | 50 | 40 | 50 |
| R_DS(on) max (mΩ) at V_GS=10V | 41 | 40 | 60 | 40 |
| Fast Body Diode (CoolMOS CFD7) | Yes | Yes | Yes | Yes |
| Automotive Grade (AEC-Q101) | No (industrial) | No (industrial) | No (industrial) | No (industrial) |
| Approx. Unit Price (1k qty, USD) | 2.92 | 3.05 | 2.55 | 2.95 |
Key Differentiators
- Fast body diode optimized for ZVS and LLC bridges (vs IPB65R040CFD7ATMA1)
- 650V rating provides 50V headroom over 600V PFC bus (vs IPB60R040CFD7ATMA1)
- Lower R_DS(on) at same V_DS class (vs IPB65R060CFD7ATMA1)
Design Notes
At I_D=30A rms in an LLC stage, the IPB65R041CFD7ATMA1 dissipates approximately I_D² × R_DS(on) × (1 - cos_theta)/2 ≈ 7-9W. With R_thJC ≈ 0.55°C/W and a TO-263 copper area of 1 sq-inch (R_thJA ≈ 35°C/W), the case rises 25-30°C above ambient at full load. For continuous 40A+ operation, add an external heat sink or upgrade to a top-side cooled TOLL package.
Keep the gate-drive loop under 5mm by placing the gate resistor and gate-source 100nF bypass directly between pins 1 and 3. Use a Kelvin-source connection when possible (4-pin D2PAK variant) to eliminate source-lead inductance and prevent turn-on dv/dt-induced ringing. The drain copper must carry 50A continuous without exceeding 30°C/W to keep case temperature within the SOA.
Never operate above V_DS=650V; the datasheet reserves a 50V transient rating, but continuous operation above 600V risks avalanche. Avoid gate voltages above ±20V; even a brief 24V gate drive can rupture the oxide. For the CFD7 fast body diode, do NOT add a series diode to slow it - the part is qualified to handle hard commutation up to the datasheet di/dt limit.
Place a 100nF/100V X7R bypass directly between gate and source as close to the IC as possible to suppress V_GS ringing during turn-on. The TO-263 tab must be soldered to a continuous copper pour of at least 25×25mm on the top layer; use thermal vias in a 3×3 grid to bottom layer to keep R_thJA ≤ 35°C/W in 4-layer FR4 designs.
Compliance Information
RoHS compliant per Infineon product page. Industrial grade only - select the IPB65R041CFD7AUMA1 (AU suffix) for AEC-Q101 automotive applications. Halogen-free and lead-free per JEDEC J-STD-020 MSL-1 qualification.
