IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon
MPN: IPD600N25N3GATMA1 ✓ Hoạt độngIPD600N25N3GATMA1 Tóm tắt
What is an N-channel MOSFET? An N-channel MOSFET (NMOS) is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage creates an n-type conduction channel between drain and source. MOSFETs sit within the hierarchy: power MOSFET -> discrete semiconductor -> power management component. The 250 V OptiMOS 3 family targets high-frequency switching applications where both low conduction loss (RDS(on)) and low switching loss (Qg) are essential to efficient SMPS design.
Key features include an excellent gate-charge x RDS(on) figure-of-merit (FOM), very low on-resistance RDS(on) of 60 mOhm maximum, 175 C maximum operating junction temperature, Pb-free lead plating, RoHS compliance, halogen-free compliance per IEC 61249-2-21, and JEDEC qualification for the target application. The 60 mOhm RDS(on) at 10 V VGS significantly reduces conduction losses versus older planar MOSFET generations.
The OptiMOS 3 technology uses an advanced trench gate structure that minimizes cell pitch while maintaining low gate charge, achieving a 40-50% RDS(on) reduction versus the previous OptiMOS 2 generation at the same voltage class. The DPAK (TO-252) package provides an industry-standard footprint with the tab acting as the drain connection, simplifying PCB layout and heatsink attachment. The 2+Tab pinout means gate, source, and a drain tab, all accessible from one face of the package for through-hole-style surface mounting.
Typical applications include synchronous rectification in 48 V telecom systems, primary-side switches in DC-DC converters, uninterruptable power supplies (UPS), inverters for DC motor drives, and high-frequency switched-mode power supplies. The part is also well suited to industrial SMPS where 200-250 V breakdown is required.
When designing with this device, ensure the gate driver can supply the specified gate charge at the desired switching frequency; under-sized gate drives cause partial turn-on and excessive switching loss. Thermal management through the drain tab is critical because most heat exits through the package lead. Always derate to stay below 175 C junction.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPD600N25N3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD600N25N3GATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Series, Mounting Type, Package, Operating Temperature Range.
IPD600N25N3 G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPP600N25N3GXKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R1K0PFD7SAUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R600PFD7SAUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R600C6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →FDD250N25
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiHU25N25E
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD600N25N3GATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Series | OptiMOS 3 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc | 25 A |
| Power Dissipation (PD) at Tc | 136 W |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Kiểu lắp đặt | Surface Mount (Tape & Reel) |
| Technology | OptiMOS 3 trench MOSFET |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| Đông trùng haogen | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | Qualified for target application |
Cấu hình chân IPD600N25N3GATMA1
| Chân 1 | Gate — Gate drive input (10V VGS typical for full RDS(on)) |
| Chân 2 | Source — Source connection (also tied to thermal tab in some variants) |
| Chân 3 | Drain (Tab) — Drain connection via metal tab; primary thermal path |
Khu vực hoạt động an toàn (DPAK, Tc=25C)
Ứng dụng tiêu biểu
IPD600N25N3GATMA1 phù hợp cho 6 Áp dụngs: 48V Synchronous Rectification, DC-DC Converter Primary-Side Switch, Uninterruptable Power Supplies (UPS), DC Motor Drive Inverters, High-Frequency Switched-Mode Power Supplies, Telecom Brick Converters.
48V Synchronous Rectification
The IPD600N25N3GATMA1 fits 48 V synchronous rectification because its 250 V VDS provides ample headroom above 48 V rails while the 60 mOhm RDS(on) and low Qg minimize conduction and switching losses at the high frequencies typical of 48 V intermediate bus converters. Per Infineon's OptiMOS 3 family documentation, the part is purpose-built for 48 V telecom and datacom systems where efficiency and thermal density both matter. In a typical 48 V-to-12 V LLC topology, the MOSFET replaces lossy Schottky rectifiers to deliver 96%+ peak efficiency with substantial heatsink area savings.
Được đề xuất
DC-DC Converter Primary-Side Switch
In primary-side switching of 200-250 V input DC-DC converters (telecom bricks, industrial SMPS), the IPD600N25N3GATMA1's 250 V VDS rating, 60 mOhm RDS(on), and JEDEC qualification deliver robust performance. Per Infineon's datasheet, the part is qualified to JEDEC for the target application, ensuring long-term reliability in continuous-conduction-mode forward and flyback topologies. The OptiMOS 3 trench structure cuts switching loss versus planar MOSFET generations, enabling 100 kHz+ switching frequencies with reduced magnetics size.
Được đề xuất
Uninterruptable Power Supplies (UPS)
The IPD600N25N3GATMA1 serves as a robust switching element in UPS inverter and PFC stages where high efficiency at partial load extends battery runtime during outages. Per Infineon's product brief for the 250 V OptiMOS family, the part's excellent FOM (Qg x RDS(on)) and 175 C junction rating ensure reliable operation under harsh thermal cycling common in UPS environments. The DPAK footprint accepts standard clip-on heatsinks for the through-hole-style thermal path.
Được đề xuất
DC Motor Drive Inverters
In DC motor drive inverter bridges for industrial automation, the IPD600N25N3GATMA1's 250 V VDS supports 200 V DC-link buses with safety margin, while the 25 A continuous current handles sub-horsepower motor loads directly. Per Infineon's datasheet, the trench-gate OptiMOS 3 structure enables 20 kHz+ PWM switching for quieter motor operation versus 5-10 kHz IGBT alternatives. The DPAK package simplifies multi-phase PCB layouts with industry-standard land patterns.
Được đề xuất
High-Frequency Switched-Mode Power Supplies
In SMPS designs targeting 200-250 V input voltage for industrial and telecom applications, the IPD600N25N3GATMA1's 60 mOhm RDS(on) and low Qg directly reduce switching loss at 100-300 kHz operating frequencies. Per Infineon's OptiMOS 3 datasheet, this family is engineered for high-frequency switching where the FOM (Qg x RDS(on)) dominates efficiency. Compared to planar MOSFET generations, OptiMOS 3 enables smaller magnetic components and higher power density without sacrificing thermal margin.
Được đề xuất
Telecom Brick Converters
The IPD600N25N3GATMA1 fits telecom brick converters where 36-72 V input is converted to isolated 12 V or 48 V outputs at 1-3 kW power levels. Per Infineon's 250 V OptiMOS family documentation, the part's 250 V breakdown tolerates transient surges common in telecom bus environments while the 25 A continuous rating handles full-load conditions in full-bridge or push-pull topologies. The Pb-free, halogen-free, JEDEC-qualified die ensures compliance with NEBS and ETSI telecom reliability standards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD600N25N3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD600N25N3 G | IPP600N25N3GXKSA1 | IPD60R600C6ATMA1 | FDD250N25 | SiHU25N25E |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | onsemi (cross-brand) | Vishay Intertechnology (cross-brand) |
| Drain-Source Voltage (VDS) | 250 V | 250 V | 250 V | 600 V | 250 V | 250 V |
| On-Resistance RDS(on) at VGS=10V | 60 mOhm max | 60 mOhm max | 60 mOhm max | ~600 mOhm | ~60 mOhm | ~60 mOhm |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +150 C | -55 C to +150 C | -55 C to +175 C |
| RoHS / Halogen-Free Compliance | Pb-free, RoHS, halogen-free per IEC 61249-2-21 | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS |
| Technology Family | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | CoolMOS C6 | onsemi trench MOSFET | Vishay E-Series trench |
Bảo phân biệt quan trọng
- Lowest FOM in 250 V-class DPAK footprint (vsolder planar MOSFET generations)
- JEDEC-qualified for target application (vsFDD250N25 (onsemi))
- Wide operating temperature range to +175 C (vsIPD60R600C6ATMA1 (150 C max))
Ghi chú thiết kế
The DPAK package dissipates heat primarily through the drain tab. Estimated: at 25 A continuous and 60 mOhm RDS(on), conduction loss is P = I^2 x R = 37.5 W. With a JEDEC-standard 4-layer PCB, theta_JA is approximately 50 C/W (depending on copper area), yielding a junction temperature rise of ~93 C above ambient - well within the 175 C max. For continuous 25 A operation, attach the DPAK tab to at least 1 square inch of top-side copper or use a clip-on heatsink. Always verify Tj in your application with the datasheet's Zth curves.
Use a wide, short drain-trace copper pour connected directly to the tab pad for primary heat removal. Per Infineon's application notes, place the gate drive resistor (typically 10-100 ohm) close to the gate pin to suppress parasitic oscillation. Keep the source-return loop tight to minimize source inductance; use a kelvin source connection if available in your gate driver circuit.
Do not exceed 250 V VDS - avalanche breakdown above this threshold destroys the die. Do not exceed 175 C junction temperature. The OptiMOS 3 part is NOT a logic-level MOSFET; ensure the gate driver delivers at least 10 V VGS for full RDS(on) - a 3.3 V or 5 V logic signal will leave the MOSFET in partial turn-on with massive conduction loss. Check the gate-source threshold voltage in the datasheet to confirm your driver has margin at cold temperatures.
Maintain at least 4 mm clearance between drain traces and low-voltage signal traces to prevent arcing during transient events. Per JEDEC JESD22-A114 standards referenced in the Infineon datasheet, the part is qualified for industrial environments but should still benefit from conformal coating in humid conditions.
Thông tin tuân thủ
Pb-free lead plating, RoHS compliant, halogen-free per IEC 61249-2-21, JEDEC-qualified for industrial target application. Not AEC-Q100 qualified (automotive).
