IPN60R360P7SATMA1 - 600V 360mΩ CoolMOS P7 MOSFET | Infineon
MPN: IPN60R360P7SATMA1 ✓ Hoạt độngIPN60R360P7SATMA1 Tóm tắt
A superjunction MOSFET is a class of high-voltage power MOSFET that uses a deep-trench charge-balance structure to deliver much lower on-resistance per area and lower switching losses than conventional planar MOSFETs at the same voltage rating. The CoolMOS P7 family sits within the broader power MOSFET taxonomy as: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7. This technology is essential in modern SMPS where efficiency, thermal density, and EMI compliance must be balanced in compact form factors.
Key features include an integrated ESD protection cell, a low gate charge QG (typ. around 14 nC), fast body-diode reverse recovery suitable for hard-switching topologies, and an optimized body diode for reduced ringing in bridge configurations. The P7 generation targets ease-of-use with high dv/dt ruggedness, a wide SOA, and simple gate-drive requirements that allow designers to omit complex gate-drive circuitry.
The CoolMOS P7 architecture uses the latest charge-balance trench technology, achieving the industry's lowest RDS(on)*area figure-of-merit at 600 V. The 360 mΩ on-resistance variant is optimized for sub-100 W flyback and quasi-resonant topologies where moderate conduction losses and excellent switching performance are required. The integrated Zener-protected gate and source-pin connection improve robustness against VGS transients during production and field operation.
Typical applications include low-power SMPS adapters (USB-PD chargers, notebook adapters under 65 W), LED lighting drivers, auxiliary supplies in white goods, and standby/auxiliary rails in telecom equipment. The 600 V rating provides ample margin for 3-phase input rectified PFC front ends and for 230 V AC line-rectified flyback primary-side switches.
When designing with this part, place the gate-drive resistor close to the gate pin, use a Kelvin source connection when possible, and ensure the heatsink thermal resistance (junction-to-ambient) keeps TJ below 150°C at full load with the worst-case ambient temperature. This PG-SOT223 footprint also enables drop-in replacement in designs originally built around DPAK alternatives with proper land-pattern review.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for IPN60R360P7SATMA1 that are not directly assembled on the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPN60R360P7SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPN60R360P7SATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IPN60R360P7S
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB60R280P7ATMA1
✅ Drop-In✗ Hết hàng
$0.88 / Đơn vị
Xem tài liệu →IPD80R600P7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD65R380E6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04LSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPN60R360P7SATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance RDS(on) max | 360 mΩ |
| Continuous Drain Current (ID) at TC=25°C | 9 A |
| Power Dissipation (PD) at TC=25°C | 7 W |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| Khoảng nhiệt độ hoạt động | -55°C to +150°C (TJ) |
| Hộp | PG-SOT223 (Surface Mount) |
| Kiểu lắp đặt | Surface Mount |
| ESD Protection | Yes (integrated cell) |
| Đông trùng haogen | Yes (per Infineon datasheet) |
| RoHS Compliance | Compliant |
| Số chân | 3 functional + tab (PG-SOT223) |
| Body Diode | Integrated, fast-recovery |
Cấu hình chân IPN60R360P7SATMA1
| Chân 1 | Gate — Gate drive input; connect to gate-drive resistor and pull-down |
| Chân 2 | Drain — Drain connection; tied internally to the metal tab |
| Chân 3 | Source — Source connection; Kelvin connection recommended for high-di/dt |
| Chân Tab | Drain (thermal pad) — Mechanical tab electrically connected to Drain (Pin 2); provides thermal dissipation path |
Khu vực hoạt động an toàn (DC, TC=25°C)
Ứng dụng tiêu biểu
IPN60R360P7SATMA1 phù hợp cho 6 Áp dụngs: Low-Power AC-DC Flyback Converter (USB-PD Charger), LED Lighting Driver (Dimmable SSL Bulb), Auxiliary / Standby Power Supply in White Goods, Telecom Auxiliary / Housekeeping Power, Industrial Auxiliary Power Supply (24V/5V Rail), Battery Charger / Power Tool Charger.
Low-Power AC-DC Flyback Converter (USB-PD Charger)
The IPN60R360P7SATMA1 is ideal for primary-side switching in sub-65 W USB-PD adapters and notebook chargers. The 600 V VDS rating easily handles the 325 V rectified peak from 230V AC mains, while 360 mΩ RDS(on) and 9 A ID deliver full-load efficiency above 90% at 65 W. Integrated ESD protection and a fast body diode reduce EMI by 3-5 dB compared to legacy 600 V planar MOSFETs, easing compliance with EN 55022 Class B. Place the part on the primary side with a 10-100 Ω gate resistor and a 100 V TVS across the drain-source for avalanche protection.
Được đề xuất
LED Lighting Driver (Dimmable SSL Bulb)
The IPN60R360P7SATMA1 is well-suited as the main switching element in isolated and non-isolated LED drivers up to 50 W. Its 600 V rating supports 230V AC rectified input for E27/A19 bulb form factors, while 360 mΩ RDS(on) keeps conduction losses below 0.5 W at 30 W output - well within the thermal envelope of an A19 bulb. The CoolMOS P7 superjunction technology delivers flicker-free dimming when paired with leading-edge or trailing-edge dimmers, and the integrated ESD cell improves field reliability against static discharge during installation.
Được đề xuất
Auxiliary / Standby Power Supply in White Goods
The IPN60R360P7SATMA1 serves as the primary switch in low-power auxiliary supplies (5-15 W) for washing machines, refrigerators, and dishwashers. The 600 V rating handles rectified 230V AC mains, while the compact PG-SOT223 package fits on densely populated control boards. CoolMOS P7's low QG (typ. ~14 nC) enables switching frequencies above 100 kHz, shrinking the transformer by 30% versus 65 kHz designs. The integrated ESD protection provides robustness against line-transient surges common in white-goods environments.
Được đề xuất
Telecom Auxiliary / Housekeeping Power
The IPN60R360P7SATMA1 is used in telecom equipment auxiliary supplies (5-30 W) that power fans, controllers, and housekeeping rails from -48V DC bus or AC mains. The 600 V rating provides margin for AC-input variants and supports hot-swap transient handling. With 7 W power dissipation capability and a surface-mount package, the P7 fits in 1U/2U rack-mount equipment where board space is limited. The integrated ESD protection is critical for field-serviceable telecom hardware exposed to repeated handling.
Được đề xuất
Industrial Auxiliary Power Supply (24V/5V Rail)
The IPN60R360P7SATMA1 is suitable for low-power industrial auxiliary supplies that derive 24 V or 5 V rails from 230V AC mains for PLCs, HMIs, and sensor interfaces. The 600 V rating handles 3-phase rectified input with adequate margin, while the 9 A continuous drain supports continuous-mode operation up to 30 W output. CoolMOS P7's high dv/dt ruggedness (>50 V/ns) simplifies EMI filter design, and the integrated body-diode reduces dead-time losses in hard-switched converters. Designed to meet IEC 61000-4-2 ESD and IEC 61000-4-5 surge immunity requirements.
Được đề xuất
Battery Charger / Power Tool Charger
The IPN60R360P7SATMA1 functions as the primary switch in 18V/36V Li-ion battery charger front-ends rated 30-100 W. The 600 V rating handles universal AC input (100-240V), and the 360 mΩ RDS(on) supports continuous charge currents up to 4 A without thermal stress. The PG-SOT223 package enables compact charger cubes for cordless drills, leaf blowers, and outdoor power tools. CoolMOS P7's integrated ESD cell provides robustness against repeated plug/unplug cycles in consumer environments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPN60R360P7SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPN60R360P7S | IPB60R280P7ATMA1 | IPD80R600P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT223 | PG-SOT223 | PG-TO263-3 (D2PAK) | PG-TO252 (DPAK) | PG-TO252 (DPAK) |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 800 V | 650 V |
| On-Resistance RDS(on) max | 360 mΩ | 360 mΩ | 280 mΩ | 600 mΩ | 380 mΩ |
| Continuous Drain Current (ID) | 9 A | 9 A | 14 A | 5 A | 7 A |
| Technology Family | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS E6 (Superjunction) |
| Power Dissipation (TC=25°C) | 7 W | 7 W | 32 W | 13 W | 13 W |
| Mounting Type | Surface Mount (SOT223) | Surface Mount (SOT223) | Surface Mount (D2PAK) | Surface Mount (DPAK) | Surface Mount (DPAK) |
Bảo phân biệt quan trọng
- Integrated ESD protection cell (vsIPD65R380E6ATMA1 (older E6 generation))
- Lower switching losses via P7 architecture (vsIPD65R380E6ATMA1 (CoolMOS E6))
- Higher power density in PG-SOT223 footprint (vsBSC076N04NDATMA1 (40V OptiMOS in TDSON-8))
Ghi chú thiết kế
Estimated: At continuous 9 A ID and 360 mΩ RDS(on), conduction losses reach approximately 29 W at TC=25°C, far exceeding the 7 W package rating. In a practical flyback at 65 W output, average drain current is 0.4-0.8 A RMS, yielding conduction losses of 0.06-0.23 W. Add copper-pour heatsinking on the PG-SOT223 tab (minimum 100 mm² on top and bottom layers stitched with thermal vias) to keep junction temperature below 125°C at 50°C ambient. For higher power designs (>30 W), upgrade to D2PAK (IPB60R280P7ATMA1) which dissipates 32 W.
Place the gate-drive resistor (typically 10-47 Ω) within 5 mm of the gate pin to suppress ringing and parasitic oscillation. Use a Kelvin source connection by separating the gate-drive return path from the main power source path - this prevents source-inductance-induced gate-voltage drops that can cause shoot-through. The PG-SOT223 drain tab should be soldered to a copper pour with minimum 6 thermal vias (0.3 mm diameter) to the inner/outer plane layers for effective heat extraction.
Avoid exceeding the 600 V VDS rating under any transient condition - add a 600 V TVS or snubber across drain-source for inductive switching loads (transformer leakage inductance can produce voltage spikes 2-3x the bus voltage). Do not drive VGS above ±20 V absolute maximum. Always provide a gate-source pull-down resistor (10-100 kΩ) to prevent inadvertent turn-on during power-up. The integrated ESD cell protects against 2 kV HBM but external handling precautions are still recommended during manufacturing.
Thông tin tuân thủ
RoHS and halogen-free compliance per Infineon datasheet. Not AEC-Q100 qualified - this part targets consumer/industrial SMPS applications. For automotive designs, refer to Infineon automotive-grade CoolMOS variants.
