IPD60R385CPATMA1 - 600V 385mΩ CoolMOS™ CP MOSFET | Infineon
MPN: IPD60R385CPATMA1 ✓ Hoạt độngIPD60R385CPATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate-insulator interface to modulate a conduction channel between source and drain terminals. Within the broader taxonomy, MOSFETs are a subclass of FETs (field-effect transistors) which are themselves a family of discrete semiconductors used as the active switching element in switch-mode power supplies, motor drives, and solid-state relays. CoolMOS™ CP adds Infineon's proprietary compensated super-junction structure, which lowers the area-specific on-resistance (RDS(on) × A) by roughly an order of magnitude versus planar 600V MOSFETs of the same generation, reducing both conduction and switching losses.
Key specifications include a 600 V drain-source breakdown voltage (V(BR)DSS), 385 mΩ typical RDS(on) at VGS = 10 V, a typical gate charge of 18 nC, and an ultra-low reverse-recovery charge (Qrr) characteristic of the CP family. The fast intrinsic body diode and low Qrr make the part well-suited to bridge topologies where the intrinsic diode conducts during dead-time, simplifying PFC and LLC designs without requiring an external anti-parallel diode. The PG-TO252-3 package (DPAK) provides a low thermal resistance path (~62 °C/W junction-to-case typical) via the drain tab, enabling compact heatsink-less designs at moderate power levels.
Typical applications include continuous-conduction-mode (CCM) PFC stages in 200 W to 600 W PC silver-box and adapter power supplies, half-bridge and full-bridge converters in LCD/PDP TV main power sections, and 600V-class switch-mode power supplies in industrial and consumer equipment. The 600V rating also supports offline rectified mains operation in 230V AC and universal-input designs with adequate derating margin.
When designing with this device, ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification. A gate resistor in the 10 Ω to 47 Ω range helps control switching speed and EMI. Because the package tab is electrically tied to the drain, PCB layout must provide a sufficiently large drain copper pour acting as a thermal dissipator and as part of the high-voltage clearance boundary.
Bộ thay thế dễ dàng lắp đặt cho IPD60R385CPATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD60R385CPATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Drain-Source Voltage (VDS), MSL Level, Pin Count.
IPD60R380P6ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD60R460CEATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD60R280P7SAUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STD15N60M2-EP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC077N12NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R385CPATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CP (5th generation) |
| FET Type | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 600 V |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | 9 A |
| Pulsed Drain Current (IDM) | 27 A |
| Power Dissipation (PD) at TC=25°C | 83 W |
| Gate Charge (Qg) | 18 nC (typ) |
| Nhiệt độ mối nối hoạt động | -55 °C to +150 °C |
| Hộp / Vỏ | PG-TO252-3 (DPAK) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 (Gate, Drain, Source; tab = Drain) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân IPD60R385CPATMA1
| Chân 1 | Gate — Gate drive input (VGS threshold typically 3-4 V) |
| Chân 2 | Source — Source terminal (signal and power return) |
| Chân 3 | Source — Source terminal (second source pin on DPAK) |
| Chân Tab | Drain — Drain terminal (electrically tied to the metal tab; also serves as thermal pad) |
Khu vực hoạt động an toàn (DC, TC = 25 °C)
Ứng dụng tiêu biểu
IPD60R385CPATMA1 phù hợp cho 6 Áp dụngs: CCM Power Factor Correction (PFC) Stage, ATX/PC Main Power Supply (12V/5V/3.3V Rails), Notebook Adapter / Laptop Charger SMPS, LCD / PDP Television Main Power Supply, Industrial 600V-Class SMPS / Welding Inverter Front-End, Auxiliary / Standby Power Supply for Server & Telecom.
CCM Power Factor Correction (PFC) Stage
The IPD60R385CPATMA1 fits the CCM PFC boost stage in 200 W-500 W PC silver-box and adapter SMPS designs because its 600 V V(BR)DSS handles universal-mains rectified input and the 385 mΩ RDS(on) keeps conduction loss moderate at full load. CoolMOS™ CP's low Qrr eliminates the need for an external anti-parallel diode in the boost switch position. Placed between the bridge rectifier and the PFC inductor, it switches at 65-100 kHz with a 10 Ω-47 Ω gate resistor. Trade-off: the 385 mΩ RDS(on) yields slightly higher conduction loss than the 280 mΩ P7 variant, but the CP family is widely second-sourced and well-characterized for CCM PFC reference designs.
Được đề xuất
ATX/PC Main Power Supply (12V/5V/3.3V Rails)
The IPD60R385CPATMA1 is well-matched to the primary-side hard-switching FET in an ATX forward or half-bridge topology where 600 V breakdown is required. The 385 mΩ RDS(on) balances switching and conduction loss for 250-400 W continuous output. Driving with a standard PFC + PWM combo controller, the MOSFET operates at 100-150 kHz with adequate thermal headroom on a DPAK copper pour of ~1 square inch. The low Qrr characteristic of the CP family reduces body-diode-related losses in half-bridge dead-time intervals. Designers should verify avalanche energy during abnormal output short conditions against the datasheet's single-pulse avalanche rating.
Được đề xuất
Notebook Adapter / Laptop Charger SMPS
The IPD60R385CPATMA1 is suitable as the primary switch in 65 W-150 W universal-input notebook adapters where compactness and efficiency are paramount. The DPAK footprint plus the CoolMOS™ CP family's low switching loss supports adapters operating at 100-200 kHz with high power density. It is paired with a current-mode PWM controller that performs both PFC and main conversion. Compared with planar 600V MOSFETs of the same era, the CP technology reduces switching loss by ~50%, allowing either smaller magnetics or cooler operation. Thermal design should keep junction temperature below 125 °C at 40 °C ambient for typical 90 W adapters.
Được đề xuất
LCD / PDP Television Main Power Supply
The IPD60R385CPATMA1 is used in the 200 W-400 W main power supply of LCD and PDP televisions, where the PFC + LLC or PFC + half-bridge topology dominates. Its 600 V rating accommodates 230 V AC rectified input, and the 385 mΩ RDS(on) keeps total loss budget acceptable at full panel backlight load. The intrinsic fast body diode of CoolMOS™ CP simplifies the LLC resonant half-bridge where the body diode conducts during dead-time. Designers can use the same part across 32-inch to 55-inch panel main PSUs by adjusting transformer turns ratios, since the switch's SOA envelope supports the broader power range required.
Được đề xuất
Industrial 600V-Class SMPS / Welding Inverter Front-End
Industrial SMPS and welding-inverter front-end converters up to 600 V rectified input can use the IPD60R385CPATMA1 as the primary switch, where its 9 A continuous current rating and 83 W power dissipation give sufficient thermal margin in well-heatsinked chassis. The CP technology's rugged avalanche capability supports the repetitive stress of welding inverter topologies. Although the part is not automotive-qualified (AEC-Q101), industrial-environment designs with proper surge protection are well within its envelope. Use a TVS diode across the drain-source for additional protection against inductive load transients.
Được đề xuất
Auxiliary / Standby Power Supply for Server & Telecom
The IPD60R385CPATMA1 is suitable for high-voltage auxiliary and standby supplies in server, telecom, and industrial rack systems that derive from -48 V DC bus with a DC-DC front-end or universal AC mains. The 600 V rating supports rectified 230 V AC input, and the 385 mΩ RDS(on) yields acceptable loss at the low standby currents typically required (5-20 W output). The CoolMOS™ CP low-Qrr characteristic keeps EMI predictable in DCM operation, simplifying CE/UL compliance. DPAK packaging is preferable over TO-220 in 1U-height rack PSUs where z-height is constrained.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD60R385CPATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD60R380P6ATMA1 | IPD60R460CEATMA1 | IPD60R280P7SAUMA1 | STD15N60M2-EP | BSC077N12NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same | PG-TDSON-8 (OptiMOS) |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 600 V | 600 V | 600 V | 600 V | 120 V (lower-voltage family) |
| RDS(on) at VGS=10V | 385 mΩ | 380 mΩ | 460 mΩ | 280 mΩ | 270 mΩ | 7.7 mΩ (120V OptiMOS) |
| Continuous Drain Current (ID) | 9 A | 10 A | 8 A | 12 A | 15 A | 62 A (120V part) |
| Generation / Family | CoolMOS™ CP (5th gen) | CoolMOS™ P6 (6th gen) | CoolMOS™ CE | CoolMOS™ P7 (7th gen) | MDmesh™ M2 (ST) | OptiMOS™ 5 (120V) |
| Power Dissipation (PD) | 83 W | 88 W | 78 W | 95 W | 110 W | 83 W |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- 5th-generation CoolMOS™ CP technology with ultra-low Qrr (vsSTD15N60M2-EP)
- Pin-compatible upgrade path to newer CoolMOS™ generations (vsIPD60R460CEATMA1)
- Higher continuous current vs CE family at same voltage class (vsIPD60R460CEATMA1)
Ghi chú thiết kế
Estimated: at 600 V rectified mains input and 4 A average drain current with 30% duty cycle, conduction loss is roughly P = I² × RDS(on) × D = 16 × 0.385 × 0.3 ≈ 1.85 W, and switching loss at 100 kHz adds another ~1 W. Total ~2.85 W in PG-TO252-3 (θJA ≈ 62 °C/W on a 1 sq-in DPAK copper pour) yields a junction temperature rise of ~177 °C above 25 °C ambient, exceeding the 150 °C junction limit. For reliable operation, expand the drain copper pour to 2-3 sq-in or add a small clip-on heatsink. Derate ID by 50% when TC > 100 °C.
The PG-TO252-3 (DPAK) drain tab is the primary thermal dissipation path AND the high-voltage terminal. Provide at least 30 mm² of 2-oz copper pour connected to the drain tab, with thermal vias (0.3 mm drill, 1 mm pitch) to the inner-layer copper plane. Maintain 600 V creepage and clearance per IEC 60950 / IEC 62368 between the drain copper and any low-voltage trace or secondary-side copper. The DPAK land pattern is JEDEC-standard and matches TO-252 footprint used by most 600 V super-junction MOSFETs.
Gate-drive loop inductance should be minimized: place the gate resistor and gate-drive IC as close to the gate pin as possible, and use a wide, short gate-source return trace. A gate-source resistor of 10 kΩ prevents spurious turn-on from dV/dt-induced Miller coupling. Add a 10 Ω-47 Ω gate-drive resistor to control switching speed and limit ringing. For hard-switched PFC stages, consider a ferrite bead in series with the gate resistor to damp high-frequency gate-oscillation. The switching-node (drain) copper should be compact to limit radiated EMI.
Do NOT drive the IPD60R385CPATMA1 with a gate voltage below 10 V at full load - RDS(on) is specified at VGS=10V and rises sharply below that, causing overheating. Do not exceed the V(BR)DSS of 600 V, including voltage spikes from leakage inductance in the PFC boost inductor - snubber or RCD clamp is recommended. The body diode of CoolMOS™ CP has a low Qrr but cannot carry continuous DC current - use it only for dead-time conduction in half-bridge topologies.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product declaration; lead-free (Pb-free) matte-tin plating; not AEC-Q100/101 qualified (industrial/commercial use only); halogen-free status to be verified against latest material declaration; conflict-minerals declaration per Infineon CMRT
