IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
MPN: IPG20N04S4L11ATMA1 ✓ Hoạt độngIPG20N04S4L11ATMA1 Tóm tắt
A dual N-channel MOSFET is a power-semiconductor device that integrates two N-channel enhancement-mode FETs in a single package, allowing high-side/low-side, half-bridge, synchronous-rectification, or parallel-MOSFET topologies to be implemented with one component instead of two discretes. As part of the broader MOSFET -> power MOSFET -> discrete semiconductor -> power management IC hierarchy, this OptiMOS-T2 device targets switched-mode power conversion applications where the switching transistor is the dominant loss contributor.
The IPG20N04S4L11ATMA1's logic-level gate drive (10V VGS for full R<sub>DS(on)</sub> spec) enables direct PWM control from low-voltage microcontrollers, gate drivers, or 12V automotive rails without external level shifting. The OptiMOS-T2 trench technology provides low figure-of-merit (FOM = R<sub>DS(on)</sub> * Qg), reducing both conduction and switching losses. The 100% avalanche-rated design confirms robust performance under inductive load switching, which is a frequent failure mode in motor and solenoid drive circuits.
Typical applications include automotive 12V/24V brushless DC (BLDC) motor drives, electronic power steering (EPS), DC-DC converter high-side and synchronous-rectifier switches, solenoid and valve drivers, LED driver stages, and battery-management protection circuits. The dual-die Super S08 package replaces two DPAK footprints, providing significant PCB area savings and reduced parasitic loop inductance.
When designing with this device, ensure the gate-drive voltage meets the logic-level threshold (VGS(th) typically 1.7V), and respect the 41W power dissipation limit by calculating junction temperature rise from the package thermal resistance. Always use Kelvin-source PCB layout when possible to suppress gate ringing at high di/dt.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPG20N04S4L11ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPG20N04S4L11ATMA1 (cùng hình factor và footprint) — khác nhau ở MSL Level, Package, Technology, FET Type, Operating Temperature.
IPG20N04S4L08ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPG20N04S4L-11A
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPG16N10S461AATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPG20N06S4L11AATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPG20N04S4L11ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ 25C | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm |
| Maximum Power Dissipation (PD) | 41 W |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Hộp | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (260C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 Qualified |
| Trạng thái RoHS | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench |
Cấu hình chân IPG20N04S4L11ATMA1
| Chân 1 | G1 — Gate of MOSFET 1 (high-side or low-side switch) |
| Chân 2 | S1 — Source of MOSFET 1 |
| Chân 3 | D1 — Drain of MOSFET 1 |
| Chân 4 | G2 — Gate of MOSFET 2 |
| Chân 5 | S2 — Source of MOSFET 2 |
| Chân 6 | D2 — Drain of MOSFET 2 |
| Chân 7 | NC — Not connected (per datasheet pin configuration) |
| Chân 8 | NC — Not connected (per datasheet pin configuration) |
| Chân EP | Thermal Pad — Exposed pad - thermal substrate, must be soldered for rated power dissipation |
Khu vực hoạt động an toàn (SOA) - per channel, TC=25C
Ứng dụng tiêu biểu
IPG20N04S4L11ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V/24V BLDC Motor Drive, Synchronous Rectifier in DC-DC Converters, Electronic Power Steering (EPS) Half-Bridge, Solenoid and Valve Driver (Low-Side Switch), Battery Management Protection (BMS Discharge FET), LED Driver High-Side and Low-Side Switch.
Automotive 12V/24V BLDC Motor Drive
The IPG20N04S4L11ATMA1 fits automotive BLDC motor drives because its dual N-channel 40V/20A rating and 11.6 mOhm R<sub>DS(on)</sub> directly support half-bridge and three-phase inverter topologies on 12V or 24V buses. Placed in the classic 3-phase bridge feeding the stator windings, each leg switches up to 20A continuous at low R<sub>DS(on)</sub>, minimizing conduction loss and keeping the die below 175C junction at typical 5-10A motor currents. The AEC-Q101 qualification ensures reliability for body, chassis, and powertrain BLDC applications such as cooling fans, water pumps, and HVAC blowers.
Được đề xuất
Synchronous Rectifier in DC-DC Converters
The IPG20N04S4L11ATMA1 is ideal as the synchronous-rectifier (low-side) MOSFET in 12V-to-3.3V/5V buck converters because both N-channels can be paralleled or used independently to drop conduction loss. With logic-level VGS(th) and 11.6 mOhm R<sub>DS(on)</sub> at VGS=10V, the device pairs naturally with a controller like the BTS500801TEAAUMA1 or IRS2008STRPBF. Compared to a Schottky diode rectifier, this MOSFET halves the rectifier loss at 10A output and enables efficiencies above 95% in non-isolated point-of-load designs.
Được đề xuất
Electronic Power Steering (EPS) Half-Bridge
The IPG20N04S4L11ATMA1 is suited to EPS half-bridge stages where reliability and compact footprint are mandatory. The dual-die PG-TDSON-8-4 package allows one half-bridge (one high-side + one low-side FET) to be implemented with a single Infineon part, halving PCB area vs two DPAKs. The 11.6 mOhm R<sub>DS(on)</sub> and 100% avalanche rating handle the regenerative braking current pulses during EPS assist transients, while AEC-Q101 qualification meets automotive functional-safety requirements for steering systems.
Được đề xuất
Solenoid and Valve Driver (Low-Side Switch)
The IPG20N04S4L11ATMA1 fits low-side solenoid and valve drivers because each of its two N-channels can switch 20A inductive loads at 24V with full avalanche ruggedness. The 41W power dissipation in PG-TDSON-8-4 with proper copper heat-sinking supports continuous solenoid hold currents up to 5-10A. Compared to BJT Darlington drivers, this MOSFET avoids the 1.5V VCE(sat) loss and runs cool, while logic-level VGS permits direct PWM from 3.3V or 5V microcontrollers via a small gate-driver stage.
Được đề xuất
Battery Management Protection (BMS Discharge FET)
The IPG20N04S4L11ATMA1 works as a back-to-back or single discharge-protection FET in 12V Li-ion battery management systems. Its 40V VDS, 20A continuous ID, and 11.6 mOhm R<sub>DS(on)</sub> provide low-loss disconnect for 12V LiFePO4 packs up to 100A parallel configurations. The AEC-Q101 rating and 175C junction tolerance ensure reliability in harsh automotive underhood environments, and the dual-die layout allows redundant overcurrent protection in safety-critical BMS designs.
Được đề xuất
LED Driver High-Side and Low-Side Switch
The IPG20N04S4L11ATMA1 fits automotive LED headlamp and tail-light PWM drivers because both N-channels provide high-side (with bootstrap) and low-side switch capability in a single 5x6mm PG-TDSON-8-4 package. At 1-2A continuous LED currents the 11.6 mOhm R<sub>DS(on)</sub> keeps dissipation well below 0.1W, eliminating the heatsink requirement. The logic-level gate threshold supports direct microcontroller PWM up to 20kHz, enabling flicker-free dimming for DRL and matrix-beam headlamp systems.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPG20N04S4L11ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPG20N04S4L08ATMA1 | IPG20N04S4L-11A | IPG16N10S461AATMA1 | IPG20N06S4L11AATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 100 V | 60 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 16 A | 20 A |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 | OptiMOS | OptiMOS-T2 |
| Unit Price (1 pc, ref) | $0.85 | $0.95 | $0.85 | $1.10 | $0.92 |
Bảo phân biệt quan trọng
- Lower R<sub>DS(on)</sub> drop-in upgrade available (vsIPG20N04S4L08ATMA1)
- Higher VDS headroom with same footprint (vsIPG20N06S4L11AATMA1)
- Higher VDS option for HV bus applications (vsIPG16N10S461AATMA1)
Ghi chú thiết kế
Estimated: at 1A per channel continuous (2A total), VGS=10V, R<sub>DS(on)</sub>_max=11.6 mOhm, each channel dissipates P=I^2*R=1^2*0.0116=11.6 mW, well below the 41W rated package dissipation. At maximum 20A per channel in DC operation the die dissipation is P=20^2*0.0116=4.64W, requiring copper pour plus thermal vias to the PG-TDSON-8-4 exposed pad to maintain TJ below 175C. The PG-TDSON-8-4 has theta_JA in the 50-65 C/W range on a standard 1oz 4-layer JEDEC test board, so calculate junction rise at your specific PCB copper layout, not the datasheet floor value.
Layout the PG-TDSON-8-4 exposed pad with a contiguous copper pour of at least 100mm^2 on top and bottom layers, stitched with 0.3mm thermal vias in a 1.2mm grid. Minimize the high-current drain-source loop area by placing input capacitors and the MOSFET drain terminal within 5mm of each other; this suppresses inductive voltage spikes during the 40V-rated VDS turn-off transient. Use a Kelvin-source connection where the gate-driver return traces are routed directly to the source pin, separate from the power-source path, to avoid gate-ringing at high di/dt switching edges.
Do not exceed the 40V VDS rating even under transient conditions; load-dump on 24V automotive rails can exceed 60V and requires a TVS clamp or transient suppressor upstream. Never drive the gate above the +/-20V VGS absolute maximum, which can permanently damage the thin gate oxide of this logic-level OptiMOS-T2 part. For half-bridge configurations, add proper dead-time in the controller firmware to prevent shoot-through currents that can exceed 100A peak during the cross-conduction window and destroy both dies.
Thông tin tuân thủ
Infineon OptiMOS-T2 family, AEC-Q101 qualified for automotive applications, MSL1 rated for 260C peak reflow, 100% avalanche tested. RoHS compliant per datasheet Green Product marking.
