IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
MPN: IPG20N04S4L11ATMA1 ✓ فعالIPG20N04S4L11ATMA1 جائزہ
A dual N-channel MOSFET is a power-semiconductor device that integrates two N-channel enhancement-mode FETs in a single package, allowing high-side/low-side, half-bridge, synchronous-rectification, or parallel-MOSFET topologies to be implemented with one component instead of two discretes. As part of the broader MOSFET -> power MOSFET -> discrete semiconductor -> power management IC hierarchy, this OptiMOS-T2 device targets switched-mode power conversion applications where the switching transistor is the dominant loss contributor.
The IPG20N04S4L11ATMA1's logic-level gate drive (10V VGS for full R<sub>DS(on)</sub> spec) enables direct PWM control from low-voltage microcontrollers, gate drivers, or 12V automotive rails without external level shifting. The OptiMOS-T2 trench technology provides low figure-of-merit (FOM = R<sub>DS(on)</sub> * Qg), reducing both conduction and switching losses. The 100% avalanche-rated design confirms robust performance under inductive load switching, which is a frequent failure mode in motor and solenoid drive circuits.
Typical applications include automotive 12V/24V brushless DC (BLDC) motor drives, electronic power steering (EPS), DC-DC converter high-side and synchronous-rectifier switches, solenoid and valve drivers, LED driver stages, and battery-management protection circuits. The dual-die Super S08 package replaces two DPAK footprints, providing significant PCB area savings and reduced parasitic loop inductance.
When designing with this device, ensure the gate-drive voltage meets the logic-level threshold (VGS(th) typically 1.7V), and respect the 41W power dissipation limit by calculating junction temperature rise from the package thermal resistance. Always use Kelvin-source PCB layout when possible to suppress gate ringing at high di/dt.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IPG20N04S4L11ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPG20N04S4L11ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف MSL Level, Package, Technology, FET Type, Operating Temperature.
IPG20N04S4L08ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPG20N04S4L-11A
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPG16N10S461AATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPG20N06S4L11AATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPG20N04S4L11ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ 25C | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm |
| Maximum Power Dissipation (PD) | 41 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| پیکیج | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (260C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS اسٹیٹس | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench |
IPG20N04S4L11ATMA1 پن کنفیگریشن
| پن 1 | G1 — Gate of MOSFET 1 (high-side or low-side switch) |
| پن 2 | S1 — Source of MOSFET 1 |
| پن 3 | D1 — Drain of MOSFET 1 |
| پن 4 | G2 — Gate of MOSFET 2 |
| پن 5 | S2 — Source of MOSFET 2 |
| پن 6 | D2 — Drain of MOSFET 2 |
| پن 7 | NC — Not connected (per datasheet pin configuration) |
| پن 8 | NC — Not connected (per datasheet pin configuration) |
| پن EP | Thermal Pad — Exposed pad - thermal substrate, must be soldered for rated power dissipation |
محفوظ آپریٹنگ ایریا (SOA) - per channel, TC=25C
عام استعمالات
IPG20N04S4L11ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive 12V/24V BLDC Motor Drive, Synchronous Rectifier in DC-DC Converters, Electronic Power Steering (EPS) Half-Bridge, Solenoid and Valve Driver (Low-Side Switch), Battery Management Protection (BMS Discharge FET), LED Driver High-Side and Low-Side Switch.
Automotive 12V/24V BLDC Motor Drive
The IPG20N04S4L11ATMA1 fits automotive BLDC motor drives because its dual N-channel 40V/20A rating and 11.6 mOhm R<sub>DS(on)</sub> directly support half-bridge and three-phase inverter topologies on 12V or 24V buses. Placed in the classic 3-phase bridge feeding the stator windings, each leg switches up to 20A continuous at low R<sub>DS(on)</sub>, minimizing conduction loss and keeping the die below 175C junction at typical 5-10A motor currents. The AEC-Q101 qualification ensures reliability for body, chassis, and powertrain BLDC applications such as cooling fans, water pumps, and HVAC blowers.
تجویز کردہ
Synchronous Rectifier in DC-DC Converters
The IPG20N04S4L11ATMA1 is ideal as the synchronous-rectifier (low-side) MOSFET in 12V-to-3.3V/5V buck converters because both N-channels can be paralleled or used independently to drop conduction loss. With logic-level VGS(th) and 11.6 mOhm R<sub>DS(on)</sub> at VGS=10V, the device pairs naturally with a controller like the BTS500801TEAAUMA1 or IRS2008STRPBF. Compared to a Schottky diode rectifier, this MOSFET halves the rectifier loss at 10A output and enables efficiencies above 95% in non-isolated point-of-load designs.
تجویز کردہ
Electronic Power Steering (EPS) Half-Bridge
The IPG20N04S4L11ATMA1 is suited to EPS half-bridge stages where reliability and compact footprint are mandatory. The dual-die PG-TDSON-8-4 package allows one half-bridge (one high-side + one low-side FET) to be implemented with a single Infineon part, halving PCB area vs two DPAKs. The 11.6 mOhm R<sub>DS(on)</sub> and 100% avalanche rating handle the regenerative braking current pulses during EPS assist transients, while AEC-Q101 qualification meets automotive functional-safety requirements for steering systems.
تجویز کردہ
Solenoid and Valve Driver (Low-Side Switch)
The IPG20N04S4L11ATMA1 fits low-side solenoid and valve drivers because each of its two N-channels can switch 20A inductive loads at 24V with full avalanche ruggedness. The 41W power dissipation in PG-TDSON-8-4 with proper copper heat-sinking supports continuous solenoid hold currents up to 5-10A. Compared to BJT Darlington drivers, this MOSFET avoids the 1.5V VCE(sat) loss and runs cool, while logic-level VGS permits direct PWM from 3.3V or 5V microcontrollers via a small gate-driver stage.
تجویز کردہ
Battery Management Protection (BMS Discharge FET)
The IPG20N04S4L11ATMA1 works as a back-to-back or single discharge-protection FET in 12V Li-ion battery management systems. Its 40V VDS, 20A continuous ID, and 11.6 mOhm R<sub>DS(on)</sub> provide low-loss disconnect for 12V LiFePO4 packs up to 100A parallel configurations. The AEC-Q101 rating and 175C junction tolerance ensure reliability in harsh automotive underhood environments, and the dual-die layout allows redundant overcurrent protection in safety-critical BMS designs.
تجویز کردہ
LED Driver High-Side and Low-Side Switch
The IPG20N04S4L11ATMA1 fits automotive LED headlamp and tail-light PWM drivers because both N-channels provide high-side (with bootstrap) and low-side switch capability in a single 5x6mm PG-TDSON-8-4 package. At 1-2A continuous LED currents the 11.6 mOhm R<sub>DS(on)</sub> keeps dissipation well below 0.1W, eliminating the heatsink requirement. The logic-level gate threshold supports direct microcontroller PWM up to 20kHz, enabling flicker-free dimming for DRL and matrix-beam headlamp systems.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPG20N04S4L11ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPG20N04S4L08ATMA1 | IPG20N04S4L-11A | IPG16N10S461AATMA1 | IPG20N06S4L11AATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 100 V | 60 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 16 A | 20 A |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 | OptiMOS | OptiMOS-T2 |
| Unit Price (1 pc, ref) | $0.85 | $0.95 | $0.85 | $1.10 | $0.92 |
اہم امتیازی خصوصیات
- Lower R<sub>DS(on)</sub> drop-in upgrade available (بمقابلہIPG20N04S4L08ATMA1)
- Higher VDS headroom with same footprint (بمقابلہIPG20N06S4L11AATMA1)
- Higher VDS option for HV bus applications (بمقابلہIPG16N10S461AATMA1)
ڈیزائن نوٹس
Estimated: at 1A per channel continuous (2A total), VGS=10V, R<sub>DS(on)</sub>_max=11.6 mOhm, each channel dissipates P=I^2*R=1^2*0.0116=11.6 mW, well below the 41W rated package dissipation. At maximum 20A per channel in DC operation the die dissipation is P=20^2*0.0116=4.64W, requiring copper pour plus thermal vias to the PG-TDSON-8-4 exposed pad to maintain TJ below 175C. The PG-TDSON-8-4 has theta_JA in the 50-65 C/W range on a standard 1oz 4-layer JEDEC test board, so calculate junction rise at your specific PCB copper layout, not the datasheet floor value.
Layout the PG-TDSON-8-4 exposed pad with a contiguous copper pour of at least 100mm^2 on top and bottom layers, stitched with 0.3mm thermal vias in a 1.2mm grid. Minimize the high-current drain-source loop area by placing input capacitors and the MOSFET drain terminal within 5mm of each other; this suppresses inductive voltage spikes during the 40V-rated VDS turn-off transient. Use a Kelvin-source connection where the gate-driver return traces are routed directly to the source pin, separate from the power-source path, to avoid gate-ringing at high di/dt switching edges.
Do not exceed the 40V VDS rating even under transient conditions; load-dump on 24V automotive rails can exceed 60V and requires a TVS clamp or transient suppressor upstream. Never drive the gate above the +/-20V VGS absolute maximum, which can permanently damage the thin gate oxide of this logic-level OptiMOS-T2 part. For half-bridge configurations, add proper dead-time in the controller firmware to prevent shoot-through currents that can exceed 100A peak during the cross-conduction window and destroy both dies.
تعمیل کی معلومات
Infineon OptiMOS-T2 family, AEC-Q101 qualified for automotive applications, MSL1 rated for 260C peak reflow, 100% avalanche tested. RoHS compliant per datasheet Green Product marking.
