IPL60R210P6AUMA1 - 600V CoolMOS P6 MOSFET, 19.2A, 210mΩ | Infineon
MPN: IPL60R210P6AUMA1 ✓ Hoạt độngIPL60R210P6AUMA1 Tóm tắt
A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial columns under the gate oxide to achieve a much higher breakdown voltage per unit on-resistance than conventional planar DMOS designs. CoolMOS™ P6 specifically targets low-power to mid-power price/performance segments, balancing switching loss, body-diode ruggedness, and ease-of-use features such as integrated gate protection and a simple gate-drive requirement.
Key features of the IPL60R210P6AUMA1 include an integrated gate protection Zener clamp, low effective output capacitance (Coss) for reduced switching loss, and a dv/dt ruggedness profile suitable for hard-switched topologies. The PG-VSON-4 package offers a very small footprint (approximately 8 x 8 mm) with an exposed drain pad that doubles as the PCB thermal dissipation path, enabling compact high-density power designs.
The device is specifically engineered for low-power SMPS (switched-mode power supply) front ends and price/performance applications. Compared to older CoolMOS™ C3 or CP product lines, the P6 family reduces gate charge (Qg) and output charge (Qoss), while maintaining the well-known CoolMOS body-diode behavior. The integrated Zener between gate and source simplifies gate-drive design by clamping transient over-voltage events.
Typical applications include LED driver front stages, PC silver-box ATX auxiliary rails, industrial auxiliary supplies up to a few hundred watts, telecom rectifier first stages, and small server / appliance SMPS. The part targets cost-sensitive 600 V designs where ease of use and a robust gate structure outweigh the need for the absolute lowest FOM of larger CoolMOS families.
When designing with the IPL60R210P6AUMA1, the integrated gate-source Zener means a standard 12 V gate drive is appropriate; designers should not add an external gate Zener in parallel. The PG-VSON-4 drain pad must be soldered to a sufficiently large copper area to keep RthJA within SOA, typically at least 1 square inch of 2 oz copper on each layer.
This page synthesizes distributor pricing snapshots, pin-compatible drop-in alternatives within the CoolMOS™ P6 family, cross-brand equivalents in the same PG-VSON-4 footprint, and practical design notes — synthesis content not found in any single source on the web.
Bộ thay thế dễ dàng lắp đặt cho IPL60R210P6AUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPL60R210P6AUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology.
IPL60R180P6AUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPL60R185P6AUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPL60R250P6AUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPL60R299P6AUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPLK80R750P7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPL60R210P6AUMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IPL60R210P6AUMA1 |
| Series | CoolMOS™ P6 |
| FET Type | N-Channel |
| Technology | MOSFET (Superjunction / CoolMOS™) |
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current (Id) @ Tc=25°C | 19.2 A |
| On-Resistance (RDS(on)) max | 210 mΩ |
| Power Dissipation (Pd) @ Tc=25°C | 151 W |
| Hộp | PG-VSON-4 (ThinPAK) Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Packaging | Tape & Reel |
Cấu hình chân IPL60R210P6AUMA1
| Chân 1 | Gate — Gate drive input (with integrated gate-source Zener clamp) |
| Chân 2 | Drain — Drain terminal (electrically connected to the exposed thermal pad) |
| Chân 3 | Source — Source terminal |
| Chân 4 | Drain (thermal pad) — Exposed drain pad for PCB thermal dissipation and main current path |
Khu vực hoạt động an toàn (estimated for PG-VSON-4 4-layer JEDEC PCB, 25°C)
Ứng dụng tiêu biểu
IPL60R210P6AUMA1 phù hợp cho 7 Áp dụngs: LED Driver PFC Front Stage, ATX Silver-Box Auxiliary Rail SMPS, Industrial Auxiliary Power Supply, Telecom Rectifier First Stage, Small Appliance SMPS (White Goods), Solar Micro-Inverter Primary Switch, Server / Datacenter 12 V Auxiliary Supply.
LED Driver PFC Front Stage
The IPL60R210P6AUMA1's 600 V Vdss and 210 mΩ max RDS(on) make it well-suited as the main switch in the PFC boost stage of commercial LED drivers. With Id=19.2 A at Tc=25°C the device handles 100-150 W continuous LED driver output comfortably when paired with an adequate PG-VSON-4 copper thermal pad. The CoolMOS P6 superjunction architecture keeps switching losses low at the 65-100 kHz operating frequencies common in PFC stages, and the integrated gate-source Zener clamp removes the need for an external gate protection network, simplifying the gate-drive path. Compared with planar MOSFETs of similar RDS(on), the IPL60R210P6AUMA1 reduces conduction loss per switching cycle, allowing the LED driver to meet 80+ energy-efficiency targets without a heatsink.
Được đề xuất
ATX Silver-Box Auxiliary Rail SMPS
In ATX 5 Vsb / 12 V auxiliary rails, the IPL60R210P6AUMA1 acts as the primary-side main switch in quasi-resonant or hard-switched flyback converters up to 100 W. Its 600 V breakdown voltage provides a comfortable margin above the 370 V rectified 230 VAC bus, while 151 W power dissipation rating supports short overload transients during PC startup surges. CoolMOS P6's reduced gate charge (Qg) versus older CP families cuts driver losses and allows simpler low-cost gate ICs. The compact PG-VSON-4 (ThinPAK) footprint lets designers shrink the 5 Vsb converter section in space-constrained SFX form factors. This part competes directly with older C3 and CP series MOSFETs, offering better FOM at a comparable price point.
Được đề xuất
Industrial Auxiliary Power Supply
The IPL60R210P6AUMA1 is well-suited to 24 V industrial auxiliary supplies and small PLC power modules. With 600 V Vdss the part handles 230 VAC rectified inputs directly, and 19.2 A continuous current at Tc=25°C supports converter output ratings up to ~150 W without paralleling. CoolMOS P6 superjunction technology reduces switching loss versus planar alternatives, which is critical for fan-less industrial enclosures where the MOSFET must dissipate conduction loss directly into the PCB copper. The PG-VSON-4 ThinPAK package's exposed drain pad simplifies PCB thermal layout — a 2 oz copper pour of ~1 square inch keeps junction temperature within SOA at typical 24 V / 3 A output loading. Industrial designers often choose this part for cost-optimized 600 V designs where the absolute lowest FOM is not required.
Được đề xuất
Telecom Rectifier First Stage
In telecom 48 V rectifier front-end PFC stages, the IPL60R210P6AUMA1 serves as the main 600 V main switch in 1-2 kW rectifier modules where multiple CoolMOS devices are typically paralleled. The part's 210 mΩ RDS(on) and 19.2 A rating balance conduction loss with switching loss at the 65-130 kHz PFC frequencies common in modern telecom rectifiers. CoolMOS P6 superjunction architecture delivers high dV/dt ruggedness, important for handling rectified mains voltage transients and lightning surge events typical on telecom AC inputs. The PG-VSON-4 (ThinPAK) package supports the high-density, low-profile rectifier card designs that space-constrained central-office applications demand.
Được đề xuất
Small Appliance SMPS (White Goods)
White-goods applications such as washing machines, dishwashers, and induction cooktops often need small 600 V SMPS blocks for housekeeping rails and display subsystems. The IPL60R210P6AUMA1's compact PG-VSON-4 footprint and 151 W power dissipation support these low-power requirements with no heatsink in many designs. Its 600 V Vdss safely handles universal-input rectified mains, and the integrated gate Zener clamp eliminates external protection components, reducing BOM cost — a key consideration in the price-sensitive white-goods segment. CoolMOS P6's ease-of-use and high dV/dt ruggedness help designers meet strict white-goods EMI and surge immunity standards without complex snubber networks.
Được đề xuất
Solar Micro-Inverter Primary Switch
In small sub-300 W solar micro-inverters and optimizer power stages, the IPL60R210P6AUMA1 can serve as the primary-side 600 V switch in a high-frequency DC-DC conversion stage feeding the grid-tie inverter. Its 19.2 A current rating handles peak inverter current at full sunlight, and CoolMOS P6 superjunction technology keeps switching loss low at the 50-100 kHz typical operating frequencies of micro-inverter stages. The PG-VSON-4 surface-mount package enables compact, lightweight inverter designs suitable for behind-the-panel mounting. Designers must still verify that PV input transients and grid-side fault events do not exceed the part's 600 V Vdss rating — adding a transient TVS clamp is common practice in PV power stages.
Được đề xuất
Server / Datacenter 12 V Auxiliary Supply
In redundant server 12 V auxiliary and housekeeping rails, the IPL60R210P6AUMA1 delivers a price/performance balance for low-power front-end PFC stages. The 600 V Vdss safely handles 230 VAC rectified inputs while the 210 mΩ RDS(on) keeps conduction loss acceptable at typical 100-200 W server auxiliary loads. CoolMOS P6's reduced output charge (Qoss) translates to lower turn-off loss, important for the high-switching-frequency front stages that allow downstream isolation transformers to shrink. The PG-VSON-4 (ThinPAK) surface-mount package supports dense server PCB layouts where every square millimeter counts. Designers often use this part in cost-optimized server PSUs where C3 / CP series MOSFETs would meet spec but at higher loss.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPL60R210P6AUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPL60R180P6AUMA1 | IPL60R185P6AUMA1 | IPL60R250P6AUMA1 | IPLK80R750P7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-4 (ThinPAK) | PG-VSON-4 (ThinPAK) - same | PG-VSON-4 (ThinPAK) - same | PG-VSON-4 (ThinPAK) - same | PG-VSON-4 (ThinPAK) - same |
| Vdss (Drain-Source Voltage) | 600 V | 600 V | 600 V | 600 V | 800 V |
| RDS(on) max @ Vgs=10V | 210 mΩ | 180 mΩ (-14%) | 185 mΩ (-12%) | 250 mΩ (+19%) | 750 mΩ (+257%, 800V) |
| Continuous Drain Current @ Tc=25°C | 19.2 A | 21 A (+9%) | 20 A (+4%) | 17 A (-11%) | 8 A (-58%, but higher Vds) |
| Technology Family | CoolMOS P6 (Superjunction) | CoolMOS P6 (same) | CoolMOS P6 (same) | CoolMOS P6 (same) | CoolMOS P7 (next-gen) |
Bảo phân biệt quan trọng
- Lower RDS(on) within same PG-VSON-4 footprint (vsIPL60R250P6AUMA1)
- Higher Vdss headroom than IPL60R250P6AUMA1 alternative (vsIPL60R185P6AUMA1)
- Compact ThinPAK package vs larger D2PAK alternatives (vsIPB60R190P6ATMA1)
Ghi chú thiết kế
Estimated: at continuous 19.2 A drain current into a typical 2 oz copper PG-VSON-4 footprint of approximately 25 mm x 25 mm on a 4-layer JEDEC PCB, the part dissipates conduction loss I^2 * R * duty = (19.2)^2 * 0.21 * 0.5 ≈ 39 W under worst-case conditions. With a 2 oz copper thermal pad, RthJA is approximately 60 °C/W, yielding a junction temperature rise of 60 °C/W * 39 W ≈ 2340 °C — clearly impossible without active cooling. In real designs, duty cycles of 0.05-0.20 and lower RMS currents (1-3 A typical) make the PG-VSON-4 footprint adequate for 5-10 W dissipation with 1 square inch of 2 oz copper on each layer.
The PG-VSON-4 (ThinPAK) exposed drain pad MUST be soldered to a substantial PCB copper area on at least the top layer, with thermal vias stitching to inner copper planes to keep RthJA within the SOA. Use a star-grounding pattern on the source trace to keep gate-drive return currents from coupling into the gate signal path. The integrated gate-source Zener clamp means a standard 12 V gate driver such as IRS2110SPBF or 1ED3124MC12HXUMA1 is appropriate — do NOT add an external Zener in parallel as this will load the internal clamp and degrade switching performance.
Do not exceed the 600 V Vdss rating during normal operation — leave at least 50-80 V margin below Vdss to absorb leakage-inductance spikes and mains surge transients. Verify that Vgs never goes negative (e.g. via a missing gate-pull-down during UVLO); the integrated gate Zener is unidirectional and does not clamp negative transients. When paralleling multiple IPL60R210P6AUMA1 devices for higher current, gate-source resistor networks (10-100 Ω) help suppress parallel-device oscillation at the high dV/dt switching edges.
Thông tin tuân thủ
RoHS and lead-free status per Infineon product page. Halogen-free status not explicitly stated in retrieved listings - mark unknown. AEC-Q100 is not applicable for industrial-grade P6 family MOSFETs - use Q-grade variants if automotive qualification is required.
