IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon
MPN: IPL60R180P6AUMA1 ✓ Hoạt độngIPL60R180P6AUMA1 Tóm tắt
A superjunction MOSFET (also called SJ-MOS, or in Infineon's branding CoolMOS) is a high-voltage power MOSFET architecture that uses alternating deep p- and n-columns in the drift region. This breaks the silicon limit of conventional MOSFETs and delivers an order-of-magnitude lower on-state resistance per unit area compared to standard planar high-voltage MOSFETs. Superjunction MOSFETs therefore sit at the top of the high-voltage power-switching hierarchy: MOSFET -> superjunction MOSFET -> high-voltage power MOSFET -> discrete power semiconductor. CoolMOS P6 specifically targets price/performance positions for hard- and soft-switching topologies.
Key features of the IPL60R180P6AUMA1 include very low drain-source on-resistance (RDS(on)) of 180 mΩ max at VGS=10 V, low gate charge (Qg) for fast switching, integrated protection against ESD, low EMI signature thanks to controlled dV/dt, and a wide operating junction temperature range of -55°C to +150°C. The PG-VSON-4 (Thin-PAK) surface-mount package offers an exposed drain pad for low thermal resistance, enabling compact PCB designs without bulky heatsinks in moderate-power applications.
Architecturally, the CoolMOS P6 combines an ultra-fast body diode, reduced Qrr (reverse recovery charge), and a gate-oxide optimized for 10 V drive. Compared to the older P5 generation, P6 improves ease-of-use through a wider safe operating area and better light-load efficiency. The Thin-PAK package further reduces parasitic inductance compared to TO-220/TO-247 through-package variants.
Typical applications include telecom and server SMPS power supplies, PC silver-box and notebook adapters, solar inverters, LED lighting drivers, HID lamp ballasts, e-mobility charging, and industrial PFC stages. The 600 V drain rating also gives ample derating margin for universal-input rectified mains (85-265 VAC rectified to ~380 VDC bus).
When designing with this device, prioritize gate-drive design - use a 10 V gate-source supply with low-impedance drive to fully enhance the channel and minimize switching loss. Place the gate-source resistor (typically 10-100 Ω) close to the device to suppress ringing from the gate-loop inductance.
This page synthesizes Infineon distributor pricing, drop-in PG-VSON-4 alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPL60R180P6AUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPL60R180P6AUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID, Tc).
IPL60R105P7AUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPL60R180P6AUMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB60R280P7ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$0.88 / Đơn vị
Xem tài liệu →IGLR70R200D2SXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD80R600P7ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPL60R185C7AUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPL60R180P6AUMA1 Tỷ lệ tối đa & tính chất điện
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 600 V |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | 176 W |
| Khoảng nhiệt độ mối nối hoạt động | -55 °C to +150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) |
| Hộp | PG-VSON-4 (Thin-PAK) surface mount |
| Kiểu lắp đặt | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IPL60R180P6AUMA1
| Chân 1 | Source — Source (Kelvin source for gate-drive return) |
| Chân 2 | Gate — Gate (gate-drive input) |
| Chân 3 | Source — Source (main source terminal) |
| Chân 4 | Source — Source (main source terminal) |
| Chân Pad | Drain (Exposed Pad) — Drain - main current path and thermal pad on PCB bottom side |
Khu vực hoạt động an toàn (DC, TJ=25°C)
Ứng dụng tiêu biểu
IPL60R180P6AUMA1 phù hợp cho 7 Áp dụngs: Telecom & Server SMPS, Solar Inverter PFC / Boost, PC Silver-Box & Notebook Adapter, LED Lighting Drivers (Commercial), HID & Industrial Lamp Ballasts, E-Mobility Charging (Onboard & Off-board), Industrial Welding & Plasma Cutters.
Telecom & Server SMPS
The IPL60R180P6AUMA1's 600 V VDS rating comfortably covers universal-input rectified mains (85-265 VAC → ~380 VDC) with substantial derating margin for surge events. Its 180 mΩ RDS(on) and 22.4 A continuous drain current handle 1-3 kW server/telecom PSU power levels in CCM PFC and full-bridge/LLC primary stages. The PG-VSON-4 Thin-PAK footprint also enables higher power density than legacy TO-220 designs. Compared to a planar MOSFET, the superjunction architecture cuts conduction loss by ~50%, directly improving 80-PLUS Titanium efficiency targets.
Được đề xuất
Solar Inverter PFC / Boost
In solar inverter boost and PFC stages operating from a 380-400 VDC PV bus, the IPL60R180P6AUMA1's 600 V VDS gives ~50% derating margin above the maximum bus voltage, while its low 180 mΩ RDS(on) minimizes conduction loss in continuous-conduction-mode operation. The superjunction architecture supports switching frequencies of 50-100 kHz, reducing magnetic size and overall inverter weight. The -55°C to +150°C junction temperature range handles outdoor inverter thermal stress across cold-winter and hot-roof operating conditions.
Được đề xuất
PC Silver-Box & Notebook Adapter
The IPL60R180P6AUMA1 is a primary-side switch for cost-optimized 90-250 W PC silver-box and 65-100 W notebook adapters. Its 180 mΩ RDS(on) at 22.4 A ID supports 19.5 V/4.7 A output levels with reasonable conduction loss, while the CoolMOS P6 family delivers better light-load efficiency than the older P5 generation - critical for meeting no-load standby targets below 150 mW (DOE Level VI / CoC Tier 2). The PG-VSON-4 Thin-PAK package reduces PCB height versus TO-220, enabling slim laptop adapters under 18 mm profile.
Được đề xuất
LED Lighting Drivers (Commercial)
Commercial LED drivers in the 75-200 W range (high-bay, street-light, area-lighting) use the IPL60R180P6AUMA1 as the primary PFC switch where the 600 V VDS rating covers universal-input mains and 180 mΩ RDS(on) keeps full-load efficiency above 92%. The superjunction technology's fast body-diode recovery and low Qrr simplify CCM-PFC design without snubbers. The Thin-PAK SMD package also supports reflow assembly, reducing manufacturing cost versus through-hole TO-220 alternatives in high-volume OEM lighting lines.
Được đề xuất
HID & Industrial Lamp Ballasts
The IPL60R180P6AUMA1 is suitable as the main switch in HID ballast and industrial lamp driver power-factor-correction stages, where the 600 V VDS handles the rectified 220-240 VAC mains directly. Its 22.4 A continuous drain current and 176 W Ptot rating support 70-150 W lamp ballasts with adequate thermal margin. The superjunction P6 family has been characterized for the high dV/dt and high di/dt stress typical of HID ignition circuits, with proven reliability over millions of hot-restrike cycles.
Được đề xuất
E-Mobility Charging (Onboard & Off-board)
In Level-2 EV onboard chargers and off-board AC charging stations, the IPL60R180P6AUMA1 serves as the primary-side PFC MOSFET where 600 V VDS covers single-phase 220-240 VAC rectified mains and the 180 mΩ RDS(on) delivers full-load efficiency above 95% in CCM-PFC. Its wide -55°C to +150°C TJ range supports the under-hood thermal environment of onboard chargers. The PG-VSON-4 Thin-PAK SMD package also enables automated assembly versus TO-247, reducing per-unit manufacturing cost at scale.
Được đề xuất
Industrial Welding & Plasma Cutters
Industrial welding inverters and plasma cutters use the IPL60R180P6AUMA1 in the primary PFC or full-bridge stage where the 600 V VDS handles rectified 380-480 VAC three-phase industrial mains with margin. The 22.4 A continuous drain current supports 5-10 kW inverter power levels in modular parallel configurations. The CoolMOS P6's rugged body diode and high avalanche energy rating withstand the short-circuit and arc-strike transients typical of welding loads, providing robustness required for industrial reliability targets.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPL60R180P6AUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPL60R105P7AUMA1 | IPL60R180P6AUMA2 | IGLR70R200D2SXUMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4 (Thin-PAK) | PG-VSON-4 (Thin-PAK) | PG-VSON-4 (Thin-PAK) | PG-VSON-4 (Thin-PAK) |
| Drain-Source Voltage VDS (max) | 600 V | 600 V | 600 V | 700 V |
| On-Resistance RDS(on) max @ VGS=10V | 180 mΩ | 105 mΩ | 180 mΩ | 200 mΩ |
| Technology Family | CoolMOS P6 (price/performance) | CoolMOS P7 (efficiency) | CoolMOS P6 (price/performance) | CoolGaN/IGLR (medium-voltage GaN) |
| Typical Application | Hard-switched PFC, server SMPS | High-efficiency PFC, telecom | Hard-switched PFC (successor) | High-voltage intermediate bus converters |
| Approximate Unit Price (qty 1000) | $2.18 | $2.85 | $2.20 | $3.10 |
Bảo phân biệt quan trọng
- Lowest RDS(on) at 600 V in the Thin-PAK package (vsIPL60R180P6AUMA2)
- Higher power density versus 105 mΩ P7 (vsIPL60R105P7AUMA1)
- Higher voltage margin than 700 V IGLR GaN option (vsIGLR70R200D2SXUMA1)
Ghi chú thiết kế
The PG-VSON-4 (Thin-PAK) package dissipates heat primarily through the bottom exposed drain pad into the PCB copper. Design with a minimum 25 mm × 25 mm of 2 oz copper on the drain-pad landing zone to keep RθJA below 50 °C/W. Without adequate copper, junction temperature will exceed the 150 °C maximum at less than half the rated 176 W Ptot. For continuous operation above 5 W dissipation, add thermal vias (≥9 of 0.3 mm diameter) under the exposed pad.
Minimize the gate-drive loop area by placing the gate resistor (typically 10-33 Ω) directly between the gate-driver output and the MOSFET gate pin, with the return path running parallel and immediately adjacent. Keep the high-current drain-source loop compact and avoid overlapping gate and power loops to prevent capacitive coupling and false triggering. Use a Kelvin source connection (when the package provides separate gate-return pin) to eliminate source-inductance-induced gate-oxide voltage spikes during fast switching transitions.
Do not exceed the maximum VGS rating of ±20 V - exceeding this can permanently damage the thin gate oxide. Use a gate-drive voltage of 10-12 V (12 V is standard for CoolMOS P6) to fully enhance the channel. A VGS of only 5 V leaves the device in the linear region and dramatically increases RDS(on) and conduction loss. Also note that the superjunction body diode has a limited reverse-recovery rating; for bridge topologies use a fast external anti-parallel diode or ensure zero-voltage-switching operation to avoid body-diode conduction loss.
Maintain a creepage distance of at least 5 mm between the high-voltage drain pad and any adjacent low-voltage traces or secondary-side copper to meet IEC 60950 / IEC 62368-1 reinforced-insulation requirements. Use a slot in the PCB under the transformer if needed. The exposed drain pad typically operates at the full rectified mains potential (~380 VDC), so spacing is safety-critical. Route the gate-drive trace on the opposite PCB layer to minimize parasitic capacitance to the drain.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications choose AEC-Q100 qualified variants in the same package. JEDEC MSL 1 rating simplifies handling.
