IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: IQDH88N06LM5SCATMA1 ✓ Hoạt độngIQDH88N06LM5SCATMA1 Tóm tắt
A power MOSFET is a voltage-controlled switch in which the gate field modulates a conducting channel between source and drain. N-channel enhancement-mode MOSFETs like this part are the dominant switching element in synchronous buck converters, half-bridges, and full-bridges because they offer lower RDS(on) per silicon area than P-channel counterparts. Within the broader taxonomy, this OptiMOS 5 device is a discrete power semiconductor -> MOSFET -> N-channel MOSFET -> low-voltage power MOSFET, optimized for high-frequency, high-current switching.
Key differentiating features include an integrated Schottky-like monolithically integrated body diode optimized for low Qrr and robust commutation, a 1.7 V gate-threshold voltage supporting standard logic-level and 5 V/12 V driver compatibility, and a total gate charge of 76 nC that allows MHz-class switching frequencies in hard-switched topologies. The source-down PG-WHSON-8 package exposes the die paddle on both sides of the PCB for direct top-side and bottom-side heatsinking, doubling the heat-flow path versus standard DFN packages.
OptiMOS 5 technology delivers a figure-of-merit (FOM = RDS(on) x Qg) that is among the lowest commercially available for 60 V parts. This translates directly into lower conduction loss, lower switching loss, and simpler thermal design - particularly valuable in high-density DC-DC converters where every milliwatt of loss becomes a thermal-design penalty.
Typical applications include 48 V automotive eMobility auxiliary converters, high-current telecom buck regulators, server ORing and hot-swap controllers, industrial eFuse circuits, and battery management protection in 12 V/24 V/48 V Li-ion packs. The dual-side-cooling package is also preferred for vertical PCB mounting where airflow is forced across both faces.
When designing with this part, pay close attention to gate-drive voltage headroom (recommended VGS = 10 V for full RDS(on) spec) and source-down PCB layout symmetry - asymmetric copper areas on the top vs. bottom side will cause unbalanced current sharing and degrade thermal performance. The exposed source pad must be continuous with the system power-ground plane for the lowest parasitic source inductance.
This page consolidates distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop view of the IQDH88N06LM5SCATMA1 for sourcing and design-in decisions.
Bộ thay thế dễ dàng lắp đặt cho IQDH88N06LM5SCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQDH88N06LM5SCATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Cooling.
IQDH88N06LM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH29NE2LM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH88N06LM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH88N06LM5SCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IQDH88N06LM5SCATMA1 |
| Series | OptiMOS 5 |
| Technology | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Ta) | 42 A |
| Continuous Drain Current (ID, Tc) | 447 A |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | 1.7 V |
| Total Gate Charge (Qg) | 76 nC |
| Input Capacitance (Ciss) | 11 nF |
| Output Capacitance (Coss) | 2 nF |
| Reverse Transfer Capacitance (Crss) | 95 pF |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| Hộp | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân IQDH88N06LM5SCATMA1
| Chân 1 | Source — Source pad (internally connected to central die paddle) |
| Chân 2 | Source — Source pad |
| Chân 3 | Gate — Gate connection |
| Chân 4 | Source — Source pad |
| Chân 5 | Source — Source pad |
| Chân 6 | Drain — Drain tab |
| Chân 7 | Gate — Gate connection (alternate pad) |
| Chân 8 | Source — Source pad |
Khu vực hoạt động an toàn (DC) - IQDH88N06LM5SCATMA1
Ứng dụng tiêu biểu
IQDH88N06LM5SCATMA1 phù hợp cho 7 Áp dụngs: 48 V Automotive eMobility Auxiliary Converters, High-Current Telecom Buck Regulators, Server ORing and Hot-Swap Controllers, Industrial eFuse and Circuit Protection, Battery Management System (BMS) Protection, Brushless DC (BLDC) Motor Drive Half-Bridge, Solar Microinverter / MPPT Stage.
48 V Automotive eMobility Auxiliary Converters
The IQDH88N06LM5SCATMA1 fits 48 V mild-hybrid auxiliary DC-DC converters (e.g., 48 V to 12 V buck) thanks to its 60 V VDS rating (>20% margin above 54 V transient) and 0.7 mOhm RDS(on) at 10 V VGS. The dual-side-cooled PG-WHSON-8-U02 source-down package handles the high continuous current typical of eMobility auxiliary rails (often 100-200 A) without saturating the thermal envelope. Designers place the device as the high-side switch in a synchronous buck stage; the low Qrr OptiMOS 5 body diode simplifies dead-time management.
Được đề xuất
High-Current Telecom Buck Regulators
In 48 V telecom point-of-load (PoL) buck regulators, the IQDH88N06LM5SCATMA1 serves as the high-side control FET where minimizing conduction loss is critical to overall efficiency (often targeted >97% peak). The 0.7 mOhm RDS(on) reduces full-load losses versus typical 2-3 mOhm 60 V parts by 60-75%, while the 76 nC Qg supports switching frequencies of 300-500 kHz without excessive driver loss. The source-down package enables direct bottom-side copper heatsinking in vertically-mounted telecom bricks.
Được đề xuất
Server ORing and Hot-Swap Controllers
In redundant server power shelves, the IQDH88N06LM5SCATMA1 functions as the ORing FET that isolates a failed supply from the live bus. Its 0.7 mOhm RDS(on) limits steady-state voltage drop to <35 mV at 50 A, minimizing power dissipation in the always-on path. The 60 V VDS easily tolerates 48 V nominal rails with transients, and the dual-side cooling handles the typical 2-5 W continuous dissipation per ORing FET in high-current 1U/2U server designs.
Được đề xuất
Industrial eFuse and Circuit Protection
The IQDH88N06LM5SCATMA1 works well in 24 V/48 V industrial eFuse circuits that need fast fault isolation (microseconds) combined with low steady-state loss. The Infineon datasheet SOA curve confirms robust performance at 60 V / 100 A single-pulse events typical of hot-plug transients. The PG-WHSON-8-U02 package's exposed source pad provides direct thermal coupling to a copper bus bar, enabling eFuse designs rated 100-200 A continuous without external heatsinks.
Được đề xuất
Battery Management System (BMS) Protection
In 12 V, 24 V and 48 V Li-ion battery packs, the IQDH88N06LM5SCATMA1 acts as the pack-protection disconnect switch. The 0.7 mOhm RDS(on) minimizes voltage drop across the protection FET, preserving usable pack capacity at high discharge currents (e.g., 200 A peak in e-scooter / light-EV packs). The 60 V VDS rating covers all standard Li-ion configurations up to 16S (58.4 V full charge), and the dual-side-cooling source-down package simplifies thermal layout in cylindrical 18650/21700 pack holders.
Được đề xuất
Brushless DC (BLDC) Motor Drive Half-Bridge
For low-voltage BLDC motor drives used in robotics, e-bikes, and small industrial actuators, the IQDH88N06LM5SCATMA1 serves as either the high-side or low-side switch in a three-phase half-bridge stage powered from 24 V or 48 V. The 447 A TC pulsed current rating supports peak torque transients without failure, and the low Qrr OptiMOS 5 body diode minimizes dead-time distortion at high PWM frequencies (50-100 kHz). The dual-side-cooled package is advantageous in enclosed motor housings where both sides see airflow.
Được đề xuất
Solar Microinverter / MPPT Stage
In 60 V-class solar microinverters (e.g., 4S-8S Li-ion battery or sub-60 V PV panel applications), the IQDH88N06LM5SCATMA1 works as the synchronous rectifier on the secondary side of a high-frequency transformer-isolated DC-DC stage. The 0.7 mOhm RDS(on) at 10 V VGS improves weighted efficiency (CEC-weighted) by 0.3-0.5% versus 2-3 mOhm alternatives, which translates to measurably higher annual energy yield in field deployments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQDH88N06LM5SCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQDH88N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHSON-8-U02 (source-down) | PG-WHSON-8-U02 (source-down) - same | PG-WHSON-8-U02 (source-down) - same | PG-WHSON-8-U02 (source-down) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 25 V | 40 V |
| RDS(on) at 10 V VGS | 0.7 mOhm | 0.86 mOhm | 0.29 mOhm (lower, but VDS-limited) | 1.1 mOhm |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Sub-milliohm RDS(on) in a source-down dual-side-cooling package (vsStandard 60 V DFN MOSFETs (e.g., competitor 60 V 1.5 mOhm DFN-8))
- Tightest parametric match in same source-down footprint (vsIQDH88N06LM5CGSCATMA1)
- OptiMOS 5 monolithically optimized body diode (vsStandard 60 V MOSFETs without optimized body diode)
Ghi chú thiết kế
Estimated: at VDS=48 V, ID=100 A, and RDS(on)=0.7 mOhm, the conduction loss is approximately 7 W. The PG-WHSON-8-U02 source-down package has a dual-side-cooling advantage - design symmetric top and bottom copper pours (at least 6 cm^2 per side on a 40 x 40 x 1.5 mm FR4 board per the Infineon datasheet test condition) to extract the rated 333 W at TC. Asymmetric copper layout causes unbalanced current sharing and reduces effective SOA.
Place the gate-drive resistor (typically 4.7-10 ohm) within 5 mm of the gate pad to limit parasitic loop inductance and prevent VGS ringing. The source-down footprint requires direct vias through the thermal pad to the opposite-side copper plane - use a 4x4 array of 0.3 mm thermal vias filled with copper for best thermal transfer. Avoid signal traces under the source pad to maintain creepage clearance.
Keep the high-current source-return loop as short and wide as possible. Place input/output capacitors within 3 mm of the drain and source pads to minimize parasitic inductance that can cause VDS overshoot during switching transitions. The 60 V VDS rating has limited transient margin - add a TVS clamp (e.g., 56 V SMBJ-type) across the drain-source of each switch for inductive-load safety.
Do not drive the gate above +20 V (the absolute maximum VGS rating). Recommended gate drive is 10 V for full RDS(on) spec, with a tightly-regulated 12 V supply via a dedicated LDO to avoid exceeding the rating during transients. Below 4.5 V VGS the RDS(on) rises sharply and the part will overheat; verify the gate driver UVLO threshold is set appropriately for your supply rail.
Thông tin tuân thủ
RoHS compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified in this specific suffix - automotive-grade equivalents available on request from Infineon factory.
