1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
MPN: 1ED3142MC12HXUMA1 ✓ Hoạt động1ED3142MC12HXUMA1 Tóm tắt
What is an isolated gate driver? An isolated gate driver is a power-semiconductor interface IC that provides both signal-level shifting (logic-to-driver domain) and galvanic isolation between the low-voltage control domain (microcontroller, FPGA) and the high-voltage switching domain (IGBT/MOSFET/SiC half-bridge). It belongs to the broader family of gate driver ICs, which sits under power management and motor-drive hierarchies. Isolated drivers are essential when the switch node swings hundreds of volts and would otherwise violate the creepage/clearance and human-safety isolation requirements of an MCU.
The 1ED3142MC12HXUMA1 features a coreless-transformer isolation technology, separate source/sink outputs, and a programmable output UVLO referenced to the secondary-side ground (GND2). Typical propagation delay is 40 ns, with rise/fall times of 20 ns, making it suitable for switching frequencies above 100 kHz. Per the manufacturer datasheet, the part supports high CMTI (Common-Mode Transient Immunity) operation required for fast-switching SiC MOSFETs at high dv/dt.
The architecture combines an on-chip oscillator/rectifier that reconstructs the secondary-side supply from the primary-side high-frequency carrier, eliminating the need for an isolated DC-DC converter in low-power applications. This simplifies BOM count and reduces board area. The PG-DSO-8 package provides a wide-creepage lead frame suitable for reinforced insulation.
Typical applications include industrial servo drives, photovoltaic string inverters, on-board EV chargers, telecom rectifiers, and welding power supplies. The 6 A peak drive strength and tight delay matching enable high-efficiency hard-switched and resonant topologies. The device's high CMTI is particularly valuable for SiC MOSFETs, where dv/dt can exceed 50 kV/μs.
When designing with this part, place the bootstrap supply close to the driver and observe the minimum output UVLO threshold for the target SiC/IGBT. The two separate outputs (OUT, OUT_L) should be tied together at the gate with individual gate resistors if separate rise/fall-time control is desired. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes beyond the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho 1ED3142MC12HXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1ED3142MC12HXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Configuration, Number of Outputs, Peak Sink Current, Peak Source Current.
1ED3125MU12FXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1EDN7550BXTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1EDN7126GXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED21844S06JXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2106S06FXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3142MC12HXUMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | 1ED3142MC12HXUMA1 |
| Product Family | EiceDRIVER X3 Compact |
| Driver Type | Isolated single-channel gate driver |
| Isolation Technology | Coreless transformer (galvanic) |
| Isolation Voltage | 3000 Vrms |
| Number of Channels | 1 |
| Số lượng đầu ra | 2 (separate source/sink) |
| Configuration | Inverting, Non-Inverting |
| Source Drive Current | 6 A |
| Sink Drive Current | 6.5 A |
| Maximum Rise Time | 20 ns |
| Maximum Fall Time | 20 ns |
| Propagation Delay (typ.) | 40 ns |
| Supported Switches | IGBT, MOSFET, SiC MOSFET |
| Hộp | PG-DSO-8 (PG-LDSO-8-1) |
| Kiểu lắp đặt | Surface Mount |
| EU RoHS | Compliant |
| Part Status | Active |
| ECCN | EAR99 |
Cấu hình chân 1ED3142MC12HXUMA1
| Chân 1 | VCC1 — Primary-side (low-voltage) supply, 3.1 V to 5.5 V |
| Chân 2 | GND1 — Primary-side ground, reference for control logic |
| Chân 3 | IN+ — Non-inverting PWM input from MCU/FPGA |
| Chân 4 | IN- — Inverting PWM input (optional) |
| Chân 5 | GND2 — Secondary-side ground reference for the driven switch |
| Chân 6 | VCC2 — Secondary-side (gate-drive) supply, UVLO-referenced |
| Chân 7 | OUT_L — Gate-drive sink output (pull-down) |
| Chân 8 | OUT — Gate-drive source output (pull-up) |
Ứng dụng tiêu biểu
1ED3142MC12HXUMA1 phù hợp cho 6 Áp dụngs: Industrial Servo Drives, Photovoltaic String Inverters, On-Board EV Chargers (OBC), Telecom Rectifier Modules, Industrial Welding Power Supplies, Solar Microinverters and Power Optimizers.
Industrial Servo Drives
The 1ED3142MC12HXUMA1 fits servo drives because its 6 A source / 6.5 A sink drive current and 40 ns typical propagation delay satisfy the switching demands of 600 V/1200 V IGBT half-bridges used in three-phase inverters. The 3000 Vrms coreless-transformer isolation meets IEC 61800-5-1 reinforced-insulation requirements, while high CMTI rejects the fast dv/dt events from IGBT turn-off. Placed between the control MCU and the IGBT module, the part sequences gate charge and discharge through 5-10 Ω gate resistors, reducing switching losses versus discrete driver designs.
Được đề xuất
Photovoltaic String Inverters
In PV string inverters, the 1ED3142MC12HXUMA1 drives SiC MOSFETs and IGBTs in the DC-AC conversion stage with its 6 A source/6.5 A sink drive strength. The 40 ns propagation delay and 20 ns rise/fall times enable switching frequencies above 50 kHz, reducing output-filter magnetics size. The 3000 Vrms isolation supports the high DC-link voltage and provides reinforced insulation for grid-tie safety per IEC 62109. Mount the part with a low-inductance bootstrap diode and 1 µF X7R bypass capacitor for stable VCC2 operation.
Được đề xuất
On-Board EV Chargers (OBC)
The 1ED3142MC12HXUMA1 supports OBC PFC and DCDC stages by driving 650 V/1200 V SiC MOSFETs in totem-pole and LLC topologies. Its high CMTI (>100 kV/μs) rejects the high dv/dt from SiC switching, while 6 A drive strength ensures rapid gate charging to minimize transition losses. The PG-DSO-8 footprint with reinforced isolation simplifies PCB layout and meets IEC 60664-1 creepage for 800 V battery systems. Use separate source/sink gate resistors for tunable EMI and switching-loss balance.
Được đề xuất
Telecom Rectifier Modules
In 48 V telecom rectifiers and -48 V HVDC modules, the 1ED3142MC12HXUMA1 drives the primary-side MOSFETs of a DCDC stage with reinforced isolation to meet IEC 62368-1. Its 40 ns propagation delay enables higher switching frequencies that shrink the transformer, while 6 A drive handles 600 V or 800 V primary MOSFETs. The coreless-transformer isolation integrates the safety barrier without an optocoupler, increasing MTBF in always-on telecom applications.
Được đề xuất
Industrial Welding Power Supplies
Welding inverters rely on robust gate drivers to handle 600 V/1200 V IGBT modules at high switching currents; the 1ED3142MC12HXUMA1 fits this role with 6.5 A sink current that pulls the gate below threshold quickly, preventing Miller-induced shoot-through. The 3000 Vrms reinforced isolation survives the high dv/dt and noisy environment, while the wide-body PG-DSO-8 package maintains creepage under harsh industrial pollution. Pair with a 1 W bootstrap diode and 22 µF X7R VCC2 capacitor for sustained high-duty-cycle operation.
Được đề xuất
Solar Microinverters and Power Optimizers
In microinverters and module-level power optimizers, the 1ED3142MC12HXUMA1 drives the high-frequency primary MOSFETs of a DCDC stage with reinforced isolation to the grid side. Its compact PG-DSO-8 footprint and 6 A drive strength suit 300 W class designs where PCB area is constrained. The 40 ns propagation delay enables zero-voltage-switching (ZVS) phase-shift topologies, while high CMTI maintains reliability under rapid switching transients.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1ED3142MC12HXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1ED3125MU12FXUMA1 | 1EDN7550BXTSA1 | 1EDN7126GXTMA1 | 2ED21844S06JXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-DSO-8 - same | PG-DSO-8 - same |
| Source Drive Current | 6 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Sink Drive Current | 6.5 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | N/A (non-isolated) | N/A (non-isolated) | 3000 Vrms | 3000 Vrms |
| Propagation Delay (typ.) | 40 ns | 40 ns | 37 ns | 37 ns | 50 ns | 80 ns |
| Channels | 1 | 1 | 1 | 1 | 2 (half-bridge) | 2 (half-bridge) |
| Supported Switches | IGBT/MOSFET/SiC | IGBT/MOSFET/SiC | IGBT/MOSFET | MOSFET only | IGBT/MOSFET | IGBT/MOSFET |
Bảo phân biệt quan trọng
- Highest drive current in PG-DSO-8 isolated driver family (vs1ED3125MU12FXUMA1)
- Single-channel vs half-bridge (vs2ED21844S06JXUMA1)
- Reinforced isolation versus non-isolated driver (vs1EDN7126GXTMA1)
Ghi chú thiết kế
Place the bootstrap diode and 1 µF X7R VCC2 bypass capacitor as close to pins 5-6 of the PG-DSO-8 as possible to minimize the high-current gate-charge loop. Estimated: with a 6 A peak source current and a 50 nC gate charge, the bypass capacitor must supply the transient in <1 µs without drooping below UVLO; 1 µF X7R is adequate for switching frequencies up to ~200 kHz.
Route the primary-side (VCC1/GND1) and secondary-side (VCC2/GND2) ground returns so that any high-di/dt loop does not cross the isolation barrier on the PCB. Maintain at least 8 mm creepage between primary and secondary copper to support reinforced insulation per IEC 60747-17. The PG-DSO-8 wide-body package gives a head-start but does not replace good layout.
Twist or tightly couple the gate-drive output traces to the driven switch to minimize parasitic inductance. Estimated: with 20 ns rise time and a 5 nH gate-loop inductance, an Ldi/dt spike of 6 A × 5 nH / 20 ns = 1.5 V can appear at the gate; a small ferrite bead or 2-5 Ω gate resistor damps the resulting ringing and reduces EMI.
Do not exceed the VCC2 UVLO turn-on threshold when using the part to drive SiC MOSFETs with low gate-voltage ratings. The 1ED3142M variant targets IGBT/SiC UVLO (around 11 V); if the application requires a different threshold, choose the 1ED3141 variant or external-divider version. Always validate UVLO behavior in the worst-case cold-start condition.
Thông tin tuân thủ
EU RoHS compliant per Arrow listing; active part status. Not AEC-Q100 qualified - choose automotive-qualified variants for EV applications.
