IRFR7546TRPBF - 60V StrongIRFET N-MOSFET, DPAK | Infineon
MPN: IRFR7546TRPBF ✓ Hoạt độngIRFR7546TRPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. The StrongIRFET family targets high-current DC-DC converters, motor drives, and synchronous rectification where ultra-low RDS(on) and high inrush/short-circuit capability are required. MOSFETs sit within the broader power-semiconductor hierarchy (power MOSFET -> discrete semiconductor -> power management building block) and are usually the workhorse switch on the low-voltage side of a system.
The IRFR7546 uses a stripe-cell planar trench-style process optimized for 12 V to 48 V rails. RDS(on) max of 7.9 mOhm at VGS=10 V minimizes I^2R conduction loss, while the 60 V VDS rating provides comfortable derating margin for 24 V industrial buses and 36 V e-mobility packs. Bond-wire current limit is 56 A per source bonding technology (per application note AN-1140), and pulsed drain current is rated higher depending on pulse width and thermal starting conditions.
Typical applications include high-current synchronous rectification in switched-mode power supplies, brushed and brushless DC motor drive half-bridges, low-side buck/fet switches, and battery protection disconnect switches. The 60 V rating and DPAK footprint also suit solar charge controllers, e-bike controllers, and low-voltage automotive subsystems (when paired with proper TVS protection).
When designing in this part, evaluate SOA against your worst-case pulse profile and follow AN-1140 mounting guidelines for DPAK thermal performance. The exposed tab must be soldered to sufficient copper pour to keep junction temperature within the 175 deg C max rating.
Bộ thay thế dễ dàng lắp đặt cho IRFR7546TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFR7546TRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology.
IRFR7546PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR7545TRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFU7546PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FQP30N06L
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFH5015TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR7546TRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | StrongIRFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Gate-to-Source Voltage (VGS) | 20 V (max) |
| Drain Current (ID) at TC=25C | 71 A |
| Continuous Drain Current (ID) at TC=25C (bond-wire limited) | 56 A |
| RDS(on) max @ VGS=10V | 7.9 mOhm |
| Power Dissipation (PD) at TC=25C | 99 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | DPAK (TO-252AA) |
| Kiểu lắp đặt | Surface Mount |
| Lead-Free / PBF | Yes (TRPBF suffix) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IRFR7546TRPBF
| Chân 1 | Gate — Gate input (MOSFET gate drive) |
| Chân 2 | Drain — Drain (also tied to the tab) |
| Chân 3 | Source — Source |
| Chân 4 | Tab (Drain) — Drain / thermal tab (electrically same as pin 2) |
Ứng dụng tiêu biểu
IRFR7546TRPBF phù hợp cho 6 Áp dụngs: Synchronous Rectification in 24-48V SMPS, Brushless DC Motor Drive Half-Bridge, Battery Protection Disconnect Switch, Solar Charge Controller Load Switch, Brushed DC Motor Drive Low-Side Switch, DC Load Dump / Hot-Swap Controller Pass Element.
Synchronous Rectification in 24-48V SMPS
The IRFR7546TRPBF is well-suited as the low-side synchronous rectifier in 24-48 V switched-mode power supplies. Its 7.9 mOhm RDS(on) at VGS=10V minimizes conduction loss, while the 60 V VDS rating provides safe derating margin against ringing on the switching node. Compared with a Schottky diode replacement, the IRFR7546TRPBF cuts rectifier loss by roughly 60-70% at 20 A, raising overall efficiency and easing thermal budgets in telecom, solar, and industrial DIN-rail power designs.
Được đề xuất
Brushless DC Motor Drive Half-Bridge
In BLDC and PMSM motor drives, the IRFR7546TRPBF serves as the low-FET in each half-bridge leg of a three-phase inverter. With 71 A ID max and 99 W PD, it comfortably handles peak motor current during acceleration while the StrongIRFET process withstands avalanche events from inductive kick-back. Designers should size the high-side FET similarly and follow Infineon AN-1140 for DPAK copper-pour thermal management.
Được đề xuất
Battery Protection Disconnect Switch
The IRFR7546TRPBF works as the main disconnect switch in 24-36 V battery-pack protection circuits. Its 60 V VDS rating covers LiFePO4 and 10S Li-ion packs with headroom, while low RDS(on) reduces steady-state loss on the discharge path. Combined with a battery management front-end IC, the IRFR7546TRPBF supports high inrush load steps typical of e-bike and light EV applications.
Được đề xuất
Solar Charge Controller Load Switch
Off-grid solar charge controllers use the IRFR7546TRPBF as the high-side load disconnect between battery and DC load bus. The 60 V rating handles 24 V panel open-circuit spikes when combined with a TVS clamp, and 7.9 mOhm RDS(on) keeps voltage drop under 200 mV even at 25 A load. StrongIRFET avalanche ruggedness also absorbs switching transients from inductive relay coils and PWM-driven lighting loads.
Được đề xuất
Brushed DC Motor Drive Low-Side Switch
For brushed DC motor drives in industrial automation and robotics, the IRFR7546TRPBF serves as a low-side PWM switch. Its 71 A ID max handles inrush during stall conditions, while the 175 C maximum junction temperature supports sustained PWM operation with proper PCB thermal design. Pair with a dedicated gate-driver IC to keep switching losses in check above 20 kHz PWM frequencies.
Được đề xuất
DC Load Dump / Hot-Swap Controller Pass Element
In 24-28 V industrial hot-swap and e-fuse designs, the IRFR7546TRPBF acts as the series pass element limiting inrush current. Its strong avalanche rating absorbs energy during load-dump transients when paired with a TVS clamp, and the 7.9 mOhm RDS(on) reduces steady-state voltage drop across the e-fuse. A hot-swap controller IC monitors VDS and GATE drives the IRFR7546TRPBF in linear or fully-enhanced mode.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFR7546TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFR7546PBF | IRFR7545TRPBF | IRFU7546PBF | FQP30N06L | IRFH5015TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies |
| Package | DPAK (TO-252AA) | DPAK (TO-252AA) - same | DPAK (TO-252AA) - same | IPAK (TO-251) - through-hole | DPAK (TO-252AA) - same | DPAK-family footprint - same |
| VDS max (V) | 60 | 60 | 60 | 60 | 60 | 60 |
| Technology | StrongIRFET (planar) | StrongIRFET | StrongIRFET | StrongIRFET | Standard planar N-FET | StrongIRFET |
| Lead-Free / RoHS | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- 71 A ID max with only 7.9 mOhm RDS(on) (vsFQP30N06L)
- StrongIRFET avalanche and dV/dt ruggedness (vsFQP30N06L)
- DPAK surface-mount low-thermal-resistance option (vsIRFU7546PBF)
Ghi chú thiết kế
Estimated: at PD=10W continuous with the DPAK mounted on 1 sq-in of 2 oz copper on a standard FR-4 PCB, junction-to-ambient thermal resistance is approximately 40-50 C/W, giving a junction temperature rise of 400-500 C - clearly above the 175 C limit. Realistic continuous dissipation without a heatsink is in the 2-4 W range. For 10 W+ operation, use a heatsink bonded to the tab, larger copper pours (>=3 sq-in), and forced airflow. Always follow Infineon application note AN-1140 for DPAK mounting.
Solder the DPAK thermal tab to a flooded copper pour on the top, inner, and bottom layers stitched with thermal vias (typically 0.3 mm pitch, 9-12 vias) directly under the tab. Keep the gate-trace short and away from the switching node to minimize dv/dt-induced gate ringing. Use a gate-source resistor of 10-100 kOhm close to the gate pin to keep the part off during transient conditions.
Do not drive the gate above the absolute maximum VGS=20V rating or with insufficient gate-drive amplitude (VGS<8V) - partial enhancement drives the FET into its linear region and destroys it thermally. Also respect the bond-wire current limit of 56 A for continuous operation; the 71 A ID max is a calculated figure based on junction temperature. Add a TVS clamp across drain-source for inductive-load designs to keep avalanche within the datasheet EAS rating.
Thông tin tuân thủ
Lead-free per the TRPBF suffix in the MPN; RoHS compliant per Infineon product page. AEC-Q100 automotive qualification is not specified for this standard part; consider AEC-Q100 qualified StrongIRFET variants for automotive applications.
