IRFR7546TRPBF - 60V StrongIRFET N-MOSFET, DPAK | Infineon
MPN: IRFR7546TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.74 | $740.00 |
| 3,000 | $0.62 | $1,860.00 |
IRFR7546TRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. The StrongIRFET family targets high-current DC-DC converters, motor drives, and synchronous rectification where ultra-low RDS(on) and high inrush/short-circuit capability are required. MOSFETs sit within the broader power-semiconductor hierarchy (power MOSFET -> discrete semiconductor -> power management building block) and are usually the workhorse switch on the low-voltage side of a system.
The IRFR7546 uses a stripe-cell planar trench-style process optimized for 12 V to 48 V rails. RDS(on) max of 7.9 mOhm at VGS=10 V minimizes I^2R conduction loss, while the 60 V VDS rating provides comfortable derating margin for 24 V industrial buses and 36 V e-mobility packs. Bond-wire current limit is 56 A per source bonding technology (per application note AN-1140), and pulsed drain current is rated higher depending on pulse width and thermal starting conditions.
Typical applications include high-current synchronous rectification in switched-mode power supplies, brushed and brushless DC motor drive half-bridges, low-side buck/fet switches, and battery protection disconnect switches. The 60 V rating and DPAK footprint also suit solar charge controllers, e-bike controllers, and low-voltage automotive subsystems (when paired with proper TVS protection).
When designing in this part, evaluate SOA against your worst-case pulse profile and follow AN-1140 mounting guidelines for DPAK thermal performance. The exposed tab must be soldered to sufficient copper pour to keep junction temperature within the 175 deg C max rating.
Drop-in alternatives for IRFR7546TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR7546TRPBF (same form factor and footprint) β differing in Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR7546PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR7545TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFU7546PBF
β Drop-Inπ Reference alternative (not in catalog)
FQP30N06L
β Drop-Inπ Reference alternative (not in catalog)
IRFH5015TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRFR7546TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | StrongIRFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Gate-to-Source Voltage (VGS) | 20 V (max) |
| Drain Current (ID) at TC=25C | 71 A |
| Continuous Drain Current (ID) at TC=25C (bond-wire limited) | 56 A |
| RDS(on) max @ VGS=10V | 7.9 mOhm |
| Power Dissipation (PD) at TC=25C | 99 W |
| Operating Junction Temperature | -55C to +175C |
| Package | DPAK (TO-252AA) |
| Mounting Type | Surface Mount |
| Lead-Free / PBF | Yes (TRPBF suffix) |
| RoHS Status | Compliant |
IRFR7546TRPBF Pin Configuration
| Pin 1 | Gate β Gate input (MOSFET gate drive) |
| Pin 2 | Drain β Drain (also tied to the tab) |
| Pin 3 | Source β Source |
| Pin 4 | Tab (Drain) β Drain / thermal tab (electrically same as pin 2) |
Typical Applications
IRFR7546TRPBF is suitable for 6 applications: Synchronous Rectification in 24-48V SMPS, Brushless DC Motor Drive Half-Bridge, Battery Protection Disconnect Switch, Solar Charge Controller Load Switch, Brushed DC Motor Drive Low-Side Switch, DC Load Dump / Hot-Swap Controller Pass Element.
Synchronous Rectification in 24-48V SMPS
The IRFR7546TRPBF is well-suited as the low-side synchronous rectifier in 24-48 V switched-mode power supplies. Its 7.9 mOhm RDS(on) at VGS=10V minimizes conduction loss, while the 60 V VDS rating provides safe derating margin against ringing on the switching node. Compared with a Schottky diode replacement, the IRFR7546TRPBF cuts rectifier loss by roughly 60-70% at 20 A, raising overall efficiency and easing thermal budgets in telecom, solar, and industrial DIN-rail power designs.
Recommended
Brushless DC Motor Drive Half-Bridge
In BLDC and PMSM motor drives, the IRFR7546TRPBF serves as the low-FET in each half-bridge leg of a three-phase inverter. With 71 A ID max and 99 W PD, it comfortably handles peak motor current during acceleration while the StrongIRFET process withstands avalanche events from inductive kick-back. Designers should size the high-side FET similarly and follow Infineon AN-1140 for DPAK copper-pour thermal management.
Recommended
Battery Protection Disconnect Switch
The IRFR7546TRPBF works as the main disconnect switch in 24-36 V battery-pack protection circuits. Its 60 V VDS rating covers LiFePO4 and 10S Li-ion packs with headroom, while low RDS(on) reduces steady-state loss on the discharge path. Combined with a battery management front-end IC, the IRFR7546TRPBF supports high inrush load steps typical of e-bike and light EV applications.
Recommended
Solar Charge Controller Load Switch
Off-grid solar charge controllers use the IRFR7546TRPBF as the high-side load disconnect between battery and DC load bus. The 60 V rating handles 24 V panel open-circuit spikes when combined with a TVS clamp, and 7.9 mOhm RDS(on) keeps voltage drop under 200 mV even at 25 A load. StrongIRFET avalanche ruggedness also absorbs switching transients from inductive relay coils and PWM-driven lighting loads.
Recommended
Brushed DC Motor Drive Low-Side Switch
For brushed DC motor drives in industrial automation and robotics, the IRFR7546TRPBF serves as a low-side PWM switch. Its 71 A ID max handles inrush during stall conditions, while the 175 C maximum junction temperature supports sustained PWM operation with proper PCB thermal design. Pair with a dedicated gate-driver IC to keep switching losses in check above 20 kHz PWM frequencies.
Recommended
DC Load Dump / Hot-Swap Controller Pass Element
In 24-28 V industrial hot-swap and e-fuse designs, the IRFR7546TRPBF acts as the series pass element limiting inrush current. Its strong avalanche rating absorbs energy during load-dump transients when paired with a TVS clamp, and the 7.9 mOhm RDS(on) reduces steady-state voltage drop across the e-fuse. A hot-swap controller IC monitors VDS and GATE drives the IRFR7546TRPBF in linear or fully-enhanced mode.
Recommended
Recommended Products Summary
Engineering reference data for IRFR7546TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR7546PBF | IRFR7545TRPBF | IRFU7546PBF | FQP30N06L | IRFH5015TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies |
| Package | DPAK (TO-252AA) | DPAK (TO-252AA) - same | DPAK (TO-252AA) - same | IPAK (TO-251) - through-hole | DPAK (TO-252AA) - same | DPAK-family footprint - same |
| VDS max (V) | 60 | 60 | 60 | 60 | 60 | 60 |
| Technology | StrongIRFET (planar) | StrongIRFET | StrongIRFET | StrongIRFET | Standard planar N-FET | StrongIRFET |
| Lead-Free / RoHS | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- 71 A ID max with only 7.9 mOhm RDS(on) (vs FQP30N06L)
- StrongIRFET avalanche and dV/dt ruggedness (vs FQP30N06L)
- DPAK surface-mount low-thermal-resistance option (vs IRFU7546PBF)
Design Notes
Estimated: at PD=10W continuous with the DPAK mounted on 1 sq-in of 2 oz copper on a standard FR-4 PCB, junction-to-ambient thermal resistance is approximately 40-50 C/W, giving a junction temperature rise of 400-500 C - clearly above the 175 C limit. Realistic continuous dissipation without a heatsink is in the 2-4 W range. For 10 W+ operation, use a heatsink bonded to the tab, larger copper pours (>=3 sq-in), and forced airflow. Always follow Infineon application note AN-1140 for DPAK mounting.
Solder the DPAK thermal tab to a flooded copper pour on the top, inner, and bottom layers stitched with thermal vias (typically 0.3 mm pitch, 9-12 vias) directly under the tab. Keep the gate-trace short and away from the switching node to minimize dv/dt-induced gate ringing. Use a gate-source resistor of 10-100 kOhm close to the gate pin to keep the part off during transient conditions.
Do not drive the gate above the absolute maximum VGS=20V rating or with insufficient gate-drive amplitude (VGS<8V) - partial enhancement drives the FET into its linear region and destroys it thermally. Also respect the bond-wire current limit of 56 A for continuous operation; the 71 A ID max is a calculated figure based on junction temperature. Add a TVS clamp across drain-source for inductive-load designs to keep avalanche within the datasheet EAS rating.
Compliance Information
Lead-free per the TRPBF suffix in the MPN; RoHS compliant per Infineon product page. AEC-Q100 automotive qualification is not specified for this standard part; consider AEC-Q100 qualified StrongIRFET variants for automotive applications.
