IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon
MPN: IRFS4010TRLPBF ✓ Hoạt độngIRFS4010TRLPBF Tóm tắt
A power MOSFET is a voltage-controlled majority-carrier device used as a high-speed switch or linear element in power-conversion circuits. MOSFETs sit within the broader hierarchy of discrete semiconductors (transistors -> FETs -> MOSFETs -> power MOSFETs) and form the core switching element in synchronous rectifiers, DC-DC converters, and motor-drive half-bridges. Their near-zero gate current, fast switching, and easy paralleling make them preferred over BJTs for high-frequency power conversion.
Key features include a 100V drain-to-source breakdown voltage (VDS), a continuous drain current of 180A at TC = 25C, pulsed current capability well above this for inrush transients, and an industry-standard D2PAK footprint that is mechanically interchangeable with the legacy TO-220 through-hole footprint when PCB real estate permits. The total gate charge (Qg) of 143 nC keeps driver losses modest at moderate switching frequencies, and the JEDEC-qualified die supports reliable operation in industrial environments.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), battery protection and OR-ing circuits, high-speed power switching, DC motor drive, and hard-switched high-frequency circuits up to several hundred kilohertz. The wide SOA margin also suits automotive 48V mild-hybrid subsystems and e-bike controllers where the device's 180A rating provides ample design headroom.
Bộ thay thế dễ dàng lắp đặt cho IRFS4010TRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFS4010TRLPBF (cùng hình factor và footprint) — khác nhau ở Package, Total Gate Charge (Qg), Drain-to-Source Voltage (VDS), RoHS Status, Technology.
IRFS4010TRRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFS4010-7PPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AUIRFS4010-7TRL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRF5305STRLPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFS4010TRLPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 180 A |
| RDS(on) max @ VGS=10V | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | Plus or minus 20 V |
| Total Gate Charge (Qg) | 143 nC |
| Power Dissipation (PD) at TC=25C | 375 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | D2PAK (TO-263AB), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Gate Drive Voltage | 10 V (normal level, optimized) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Qualification | JEDEC standard |
Cấu hình chân IRFS4010TRLPBF
| Chân 1 | GATE — Gate control input |
| Chân 2 | DRAIN — Drain terminal (substrate, also the metal tab) |
| Chân 3 | SOURCE — Source terminal |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRFS4010TRLPBF phù hợp cho 6 Áp dụngs: Synchronous Rectification in SMPS, Uninterruptible Power Supplies (UPS), High-Current DC Motor Drive, Battery Protection and OR-ing Circuits, Solar Inverter and MPPT Stage, Automotive 48V Mild-Hybrid Systems.
Synchronous Rectification in SMPS
The IRFS4010TRLPBF is purpose-built for synchronous rectification in 12V-48V switched-mode power supplies, where it replaces Schottky diodes on the secondary side of the transformer to cut conduction losses. With RDS(on) of 4.7 mOhm at VGS=10V and a continuous drain current of 180A, the device handles multi-kilowatt server, telecom, and industrial PSUs at switching frequencies up to several hundred kilohertz. Total gate charge of 143 nC keeps driver losses modest; pair it with a UCC24612 or NCP4306 synchronous-rectifier controller for best efficiency.
Được đề xuất
Uninterruptible Power Supplies (UPS)
In online UPS systems the IRFS4010TRLPBF serves as the high-current battery-isolation and inverter switch, where its 180A rating and 100V VDS handle battery-bus voltages from 24V to 72V with margin. The 375W power dissipation at TC=25C and JEDEC-qualified die support continuous operation during grid-loss events. Mount on a 2-3 square-inch copper pad with thermal vias to keep junction temperature below 125C; the 4.7 mOhm RDS(on) yields typical conduction loss around 30W at 80A.
Được đề xuất
High-Current DC Motor Drive
The IRFS4010TRLPBF works as the low-side switch in brushed DC motor and e-bike controller half-bridges, where the 180A rating accommodates inrush currents during motor start-up. The D2PAK package bolts to a small aluminum heatsink for sustained 50-80A operation. Use a gate-driver such as the IRS10752LTRPBF for fast turn-on/off and add a 10k gate-source resistor to prevent Miller-induced shoot-through. The 100V VDS also tolerates back-EMF spikes from 24V-48V DC motors without avalanche clamping.
Được đề xuất
Battery Protection and OR-ing Circuits
Battery packs and DC bus OR-ing systems use the IRFS4010TRLPBF as a low-loss disconnect switch, where its 4.7 mOhm RDS(on) minimizes voltage drop across the MOSFET during high-current discharge. At 100A load the conduction loss is roughly 47W versus 200W+ for an equivalent MOSFET with 20 mOhm. The 100V VDS comfortably covers 48V battery stacks with inductive transient margin. Use the BTS724GXUMA1 or ITS4200SMEPHUMA1 as companion high-side smart switches for complete battery-management protection.
Được đề xuất
Solar Inverter and MPPT Stage
In low-voltage solar charge controllers and MPPT stages the IRFS4010TRLPBF is used as the buck-converter switching element between PV input and 12V-48V battery bus. Its 100V VDS handles open-circuit panel voltages of 24V-60V strings with comfortable margin, while 4.7 mOhm RDS(on) keeps peak efficiency above 97% at 30-60A loads. Pair with a digital MPPT controller like the XDPL8210 and gate driver to maintain clean switching waveforms at 50-100 kHz PWM.
Được đề xuất
Automotive 48V Mild-Hybrid Systems
The automotive-qualified AUIRFS4010-7TRL variant is suited to 48V mild-hybrid DC-DC converters and battery switches where AEC-Q101 qualification is mandatory. The standard IRFS4010TRLPBF is also widely used in non-safety-critical 48V body-control loads such as electric power steering and active suspension pumps. The 100V VDS tolerates load-dump transients up to 80V, and the D2PAK package handles continuous 100A operation when properly heatsunk.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFS4010TRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFS4010TRRPBF | IRFS4010-7PPBF | AUIRFS4010-7TRL | IRF5305STRLPBF | IRFR5305TRLPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | DPAK (TO-252) - different |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | -55 V | -55 V |
| Continuous Drain Current (ID) | 180 A | 180 A | 180 A | 180 A | -31 A | -31 A |
| RDS(on) max | 4.7 mOhm | 4.7 mOhm | 4.7 mOhm | 4.7 mOhm | 65 mOhm | 65 mOhm |
| Total Gate Charge (Qg) | 143 nC | 143 nC | 143 nC | 143 nC | 63 nC | 63 nC |
| Automotive Grade (AEC-Q101) | No | No | No | Yes | No | No |
| Unit Price (qty-100, as of 2026-09-13) | $1.12 | $1.10 (estimate, same die) | $1.14 (estimate, same die) | $1.65 (estimate, automotive grade) | $1.40 (P-channel complement) | $0.85 (DPAK package) |
Bảo phân biệt quan trọng
- Optimized for 10V gate drive at lowest RDS(on) in 100V class (vsIRF5305STRLPBF (P-channel complement))
- Automotive-qualified variant available in same package (vsStandard IRFS4010TRLPBF vs AUIRFS4010-7TRL)
- Lower thermal resistance than DPAK alternatives (vsIRFR5305TRLPBF (DPAK package))
Ghi chú thiết kế
Estimated: at VDS(on) = 4.7 mOhm and ID = 80A continuous conduction loss is P = I^2 * R = 80^2 * 0.0047 = 30.1 W. Mount the D2PAK tab on a minimum 2 square-inch copper pad with thermal vias to a bottom-side heat-spreader plane; junction-to-ambient thermal resistance (theta_JA) of approximately 40 C/W (with 1 oz copper, no airflow) limits power dissipation to about 3-4W. For continuous 30W operation use a forced-air heatsink or 4+ square-inch copper area to keep TJ below 125C.
Keep the high-current loop (drain tab, source lead, input capacitor) area as small as possible to minimize parasitic inductance that causes voltage overshoot during turn-off. Place a 100nF ceramic bypass capacitor directly between gate and source pins, with trace length under 5mm. The D2PAK tab doubles as a thermal pad; ensure 6-10 thermal vias (0.3mm drill, 1mm pitch) directly under the tab to a 2 oz inner-layer copper pour for optimal heat extraction.
Do not drive the IRFS4010TRLPBF directly from a 3.3V or 5V microcontroller pin - it is optimized for 10V normal-level gate drive and will operate in the linear region with high RDS(on) if VGS is below 8V. Use a dedicated gate-driver IC such as TC4420 or IRS10752L with a 12V bootstrap supply. Also add a transient voltage suppressor (TVS) across drain-source when switching inductive loads to clamp avalanche energy below the device's EAS rating.
Route the gate drive trace away from the drain switching node to prevent dv/dt-induced Miller turn-on. Place a 10k resistor between gate and source on the PCB to ensure the MOSFET stays off when the gate driver is in high-impedance state during power-up. For half-bridge configurations, separate high-side and low-side gate-drive return paths to avoid source-inductance-induced voltage spikes.
Thông tin tuân thủ
Pb-free (PBF suffix) per Infineon datasheet. RoHS and REACH compliant. Not AEC-Q100 qualified; choose AUIRFS4010-7TRL for AEC-Q101 automotive qualification.
